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Nexxim Simulator >
Nexxim Component Models >
Microstrip Elements >
Gap, Asymmetric

Gap, Asymmetric

Netlist Format

An asymmetric gap instance has the following netlist syntax:

Axxx n1 n2 W1=val W2=val G=val COMPONENT=asymmetric_gap SUBSTRATE=substrate_name

n1 and n2 are the names of the nodes attached to the asymmetric gap. The entry COMPONENT=asymmetric_gap identifies the element as an asymmetric gap.

The entry SUBSTRATE=substrate_name identifies the microstrip substrate model name selected for the design (see Selecting a Microstrip Substrate). See the Microstrip (MS) Substrate for information on this substrate type.

**Asymmetric Gap Instance Parameters**
Parameter	Description	Units	Default
W1	Line width of the conductor at node 1	Meter	1e-3
W2	Line width of the conductor at node 2	Meter	1e-3
G	Gap spacing	Meter	1e-4

Netlist Example

A23 Port1 Port2 W1=5e-3 W2=7e-3 G=3e-4
+ COMPONENT=asymmetric_gap SUBSTRATE=FR4

where FR4, the selected layout technology or substrate type, has a definition such as:

.SUB FR4 MS( H=7.6200e-004 Er=4.4 TAND=0.02 TANM=0
+ MSat=0 MRem=0 HU=0.00508 MET1=1.72413793103448
+ T1=1.7145e-005 RGH=0mil)

Notes

1. [Microstrip] For ±2.5% accuracy (where H is the dielectric thickness and E_R is the dielectric constant of the substrate):
G/H ³ 0.2
6.0 £ E_R £ 13.0
1.0 £ max(W1,W2)/min(W1,W2) £ 3.0
0.1 £ min(W1,W2)/H £ 3.0
0.1 £ max(W1,W2)/H £ 3.1
F[GHz]´H[mm] £ 12.0

2. [Microstrip] The following condition should be satisfied:
0.01 £ G/H < 5

3. [Microstrip] The equivalent model for the asymmetric gap structure is the PI-network of three capacitors including substrate and radiation losses.

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