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Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 55 through 99 >
   Philips MOS1101 Binned MOSFET Model, Level 63, Version 11011       

Philips MOS1101 Binned MOSFET Model, Level 63, Version 11011

The Philips MOS Model 11, Version 11010 uses the binning geometry scaling rules. The syntax for a Philips MOS11011 Binned Scaling MOSFET model (HSPICEÔ Level 63, Version 11011) is:

.MODEL modelname NMOS LEVEL=63 VERSION=11011 [parameter=val] ...

or

.MODEL modelname PMOS LEVEL=63 VERSION=11011 [parameter=val] ...

modelname is the name used by SOSFET instances to refer to this .MODEL statement. The LEVEL=63 entry selects the Philips MOS11 MOSFET model. The VERSION parameter selects among the 1100, 11010 physical geometry scaling, and 11011 binned geometry scaling versions of the MOS11 model. VERSION=11011 selects the MOS11011 Binned model. See MOSFET Model, Philips MOS11010 Physical Model and MOSFET Model, Philips MOS1100 Model for information on those MOSFET models.

 


Level 63 VERSION=11011 MOSFET Model Parameters

Model Parameter

Description

Unit

Default

LEVEL

63 is required to select the Philips MOS11 MOSFET model

Integer

1 (default if LEVEL parameter is omitted)

VERSION

Philips version selector

11011 is required to select the Philips MOS Model 11, Level 1101 (binning geometry scaling rules)

Integer

1100

GATENOISE

Flag for inclusion or exclusion of induced gate thermal noise

None

0

KOV

Body effect factor for the source/drain overlap extensions

Volt½

2.5

KPINV

Inverse of body effect factor of the polysilicon gate

Volt½

0.0

LAP

Effective channel length reduction per side due to the lateral diffusion of the source/drain dopant ions

Meter

4.0e-8

LVAR

Difference between the actual length and the programmed polysilicon gate length

Meter

0.0

NT

Thermal noise coefficient at the reference temperature

Joule

1.656e-20

NU

Exponent of the field dependence of the mobility model at the reference temperature

None

2.0

PLA1

Coefficient for the length dependent part of a1

None

0.0

PLA2

Coefficient for the length dependent part of a2

Volt

0.0

PLA3

Coefficient for the length dependent part of a3

None

0.0

PLAGIDL

Coefficient for the length dependent part of aGIDL

Amp/Volt3

0.0

PLALP

Coefficient for the length dependent part of a

None

0.0

PLBACC

Coefficient for the length dependent part of BACC

Volt

0.0

PLBGIDL

Coefficient for the length dependent part of BGIDL

Volt

0.0

PLBET

Coefficient for the length dependent part of b

Amp-Volt-2

0.0

PLBINV

Coefficient for the length dependent part of BINV

Volt

0.0

PLCGDO

Coefficient for the length dependent part of CGDO

Farad

0.0

PLCGIDL

Coefficient for the length dependent part of CGIDL

None

0.0

PLCGSO

Coefficient for the length dependent part of CGSO

Farad

0.0

PLCOX

Coefficient for the length dependent part of COX

Farad

0.0

PLETAMOB

Coefficient for the length dependent part of hMOB

None

0.0

PLIGACC

Coefficient for the length dependent part of IGACC

Amp/Volt2

0.0

PLIGINV

Coefficient for the length dependent part of IGINV

Amp/Volt2

0.0

PLIGOV

Coefficient for the length dependent part of IGOV

Amp/Volt2

0.0

PLKO

Coefficient for the length dependent part of KO

Volt½

0.0

PLMEXP

Coefficient for the length dependent part of 1/m

None

0.0

PLMO

Coefficient for the length dependent part of M0

None

0.0

PLNFA

Coefficient for the length dependent part of NFA

1/Volt-Meter4

0.0

PLNFB

Coefficient for the length dependent part of NFB

1/Volt-Meter2

0.0

PLNFC

Coefficient for the length dependent part of NFC

1/Volt

0.0

PLPHIB

Coefficient for the length dependent part of yB

Volt

0.0

PLSDIBL

Coefficient for the length dependent part of sDIBL

Volt

0.0

PLSSF

Coefficient for the length dependent part of sSF

Volt

0.0

PLTA1

Coefficient for the length dependent part of STA1

°K-1

0.0

PLTBGIDL

Coefficient for the length dependent part of STBGIDL

Volt/°K

0.0

PLTETABET

Coefficient for the length dependent part of hBET

None

0.0

PLTETAMOB

Coefficient for the length dependent part of hMOB

°K-1

0.0

PLTETAPH

Coefficient for the length dependent part of hPH

None

0.0

PLTETAR

Coefficient for the length dependent part of hR

None

0.0

PLTETASAT

Coefficient for the length dependent part of hSAT

None

0.0

PLTETASR

Coefficient for the length dependent part of hSR

None

0.0

PLTHEPH

Coefficient for the length dependent part of QPH

Volt-1

0.0

PLTHER

Coefficient for the length dependent part of QR

Volt-1

0.0

PLTHESAT

Coefficient for the length dependent part of QSAT

Volt-1

0.0

PLTHESR

Coefficient for the length dependent part of QSR

Volt-1

0.0

PLTHETH

Coefficient for the length dependent part of QTH

Volt-3

0.0

PLTNUEXP

Coefficient for the length dependent part of nEXP

None

0.0

PLTPHIB

Coefficient for the length dependent part of STyB

Volt/°K

0.0

PLTVFB

Coefficient for the length dependent part of STVFB

Volt/°K

0.0

PLWA1

Coefficient for the length times width dependent part of a1

None

0.0

PLWA2

Coefficient for the length times width dependent part of a2

Volt

0.0

PLWA3

Coefficient for the length times width dependent part of a3

None

0.0

PLWAGIDL

Coefficient for the length times width dependent part of AGIDL

Amp/Volt3

0.0

PLWBINV

Coefficient for the length times width dependent part of BINV

Volt

0.0

PLWALP

Coefficient for the length times width dependent part of a

None

0.0

PLWBACC

Coefficient for the length times width dependent part of BACC

Volt

0.0

PLWBGIDL

Coefficient for the length times width dependent part of BGIDL

Volt

0.0

PLWBET

Coefficient for the length times width dependent part of b

Amp-Volt-2

0.0

PLWCGDO

Coefficient for the length times width dependent part of CGDO

Farad

0.0

PLWCGIDL

Coefficient for the length times width dependent part of CGIDL

None

0.0

PLWCGSO

Coefficient for the length times width dependent part of CGSO

Farad

0.0

PLWCOX

Coefficient for the length times width dependent part of COX

Farad

0.0

PLWETAMOB

Coefficient for the length times width dependent part of hMOB

None

0.0

PLWIGACC

Coefficient for the length times width dependent part of IGACC

Amp/Volt2

0.0

PLWIGINV

Coefficient for the length times width dependent part of IGINV

Amp/Volt2

0.0

PLWIGOV

Coefficient for the length times width dependent part of IGOV

Amp/Volt2

0.0

PLWKO

Coefficient for the length times width dependent part of KO

Volt½

0.0

PLWMEXP

Coefficient for the length times width dependent part of 1/m

None

0.0

PLWMO

Coefficient for the length times width dependent part of M0

None

0.0

PLWNFA

Coefficient for the length times width dependent part of NFA

1/Volt-Meter4

0.0

PLWNFB

Coefficient for the length times width dependent part of NFB

1/Volt-Meter2

0.0

PLWNFC

Coefficient for the length times width dependent part of NFC

1/Volt

0.0

PLWPHIB

Coefficient for the length times width dependent part of yB

Volt

0.0

PLWSDIBL

Coefficient for the length times width dependent part of sDIBL

Volt

0.0

PLWSSF

Coefficient for the length times width dependent part of sSF

Volt

0.0

PLWTA1

Coefficient for the length times width dependent part of STA1

°K-1

0.0

PLWTBGIDL

Coefficient for the length times width dependent part of STBGIDL

Volt/°K

0.0

PLWTETABET

Coefficient for the length times width dependent part of hBET

None

0.0

PLWTETAMOB

Coefficient for the length times width dependent part of hMOB

°K-1

0.0

PLWTETAPH

Coefficient for the length times width dependent part of hPH

None

0.0

PLWTETAR

Coefficient for the length times width dependent part of hR

None

0.0

PLWTETASAT

Coefficient for the length times width dependent part of hSAT

None

0.0

PLWTETASR

Coefficient for the length times width dependent part of hSR

None

0.0

PLWTHEPH

Coefficient for the length times width dependent part of QPH

Volt-1

0.0

PLWTHER

Coefficient for the length times width dependent part of QR

Volt-1

0.0

PLWTHESAT

Coefficient for the length times width dependent part of QSAT

Volt-1

0.0

PLWTHESR

Coefficient for the length times width dependent part of QSR

Volt-1

0.0

PLWTHETH

Coefficient for the length times width dependent part of QTH

Volt-3

0.0

PLWTNUEXP

Coefficient for the length times width dependent part of nEXP

None

0.0

PLWTPHIB

Coefficient for the length times width dependent part of STyB

Volt/°K

0.0

PLWTVFB

Coefficient for the length times width dependent part of STVFB

Volt/°K

0.0

POA1

Coefficient for the geometry independent part of a1

None

NMOS: 6.022

PMOS: 6.858

POA2

Coefficient for the geometry independent part of a2

Volt

NMOS: 38.02e+1

PMOS: 57.32e+1

POA3

Coefficient for the geometry independent part of a3

None

NMOS: 0.6407

PMOS: 0.4254

POAGIDL

Coefficient for the geometry independent part of AGIDL

Amp/Volt3

0.0

POALP

Coefficient for the geometry independent part of a

None

0.025

POBACC

Coefficient for the geometry independent part of BACC

Volt

NMOS: 48

PMOS: 87.5

POBGIDL

Coefficient for the geometry independent part of BGIDL

Volt

41.0

POBET

Coefficient for the geometry independent part of b

Amp-Volt-2

NMOS: 1.922e-3

PMOS: 3.814e-4

POBINV

Coefficient for the geometry independent part of BINV

Volt

48

POCGDO

Coefficient for the geometry independent part of CGDO

Farad

NMOS: 6.392e-15

PMOS: 6.358e-15

POCGIDL

Coefficient for the geometry independent part of CGIDL

None

0.0

POCGSO

Coefficient for the geometry independent part of CGSO

Farad

NMOS: 6.392e-15

PMOS: 6.358e-15

POCOX

Coefficient for the geometry independent part of COX

Farad

NMOS: 2.98e-14

PMOS: 2.717e-14

POETAMOB

Coefficient for the geometry independent part of hMOB

None

NMOS: 1.40

PMOS: 3.0

POIGACC

Coefficient for the geometry independent part of IGACC

Amp/Volt2

0.0

POIGINV

Coefficient for the geometry independent part of IGINV

Amp/Volt2

0.0

POIGOV

Coefficient for the geometry independent part of IGOV

Amp/Volt2

0.0

POKO

Coefficient for the geometry independent part of KO

Volt½

0.5

POMEXP

Coefficient for the geometry independent part of 1/m

None

0.2

POMO

Coefficient for the geometry independent part of M0

None

0.0

PONFA

Coefficient for the geometry independent part of NFA

1/Volt-Meter4

NMOS: 8.323e22

PMOS: 1.90e22

PONFB

Coefficient for the geometry independent part of NFB

1/Volt-Meter2

NMOS:2.514e+7

PMOS: 5.043e+6

PONFC

Coefficient for the geometry independent part of NFC

1/Volt

NMOS: 0.0

PMOS: 3.627e-10

POPHIB

Coefficient for the geometry independent part of yB

Volt

0.950

POSDIBL

Coefficient for the geometry independent part of sDIBL

Volt

NMOS: 8.53e-4

PMOS: 3.55e-5

POSSF

Coefficient for the geometry independent part of sSF

Volt

NMOS: 1.2e-2

PMOS: 1.0e-2

POTA1

Coefficient for the geometry independent part of STA1

°K-1

0.0

POTBGIDL

Coefficient for the geometry-independent part of STBGIDL

Volt/°K

-3.638e-4

POTETABET

Coefficient for the geometry independent part of hBET

None

NMOS: 1.30

PMOS: 0.5

POTETAMOB

Coefficient for the geometry independent part of hMOB

°K-1

0.0

POTETAPH

Coefficient for the geometry independent part of hPH

None

NMOS: 1.35

PMOS: 3.75

POTETAR

Coefficient for the geometry independent part of hR

None

NMOS: 0.95

PMOS: 0.4

POTETASAT

Coefficient for the geometry independent part of hSAT

None

NMOS: 1.04

PMOS: 0.86

POTETASR

Coefficient for the geometry independent part of hSR

None

NMOS: 0.65

PMOS: 0.5

POTHEPH

Coefficient for the geometry independent part of QPH

Volt-1

NMOS: 1.290e-2

PMOS: 1.0e-3

POTHER

Coefficient for the geometry independent part of QR

Volt-1

NMOS: 8.12e-2

PMOS: 7.9e-2

POTHESAT

Coefficient for the geometry independent part of QSAT

Volt-1

NMOS: 2.513e-1

PMOS: 1.728e-1

POTHESR

Coefficient for the geometry independent part of QSR

Volt-1

NMOS: 3.562e-1

PMOS: 7.30e-1

POTHETH

Coefficient for the geometry independent part of QTH

Volt-3

NMOS: 1.0e-5

PMOS: 0.0

POTNUEXP

Coefficient for the geometry independent part of nEXP

None

NMOS: 5.25

PMOS: 3.23

POTPHIB

Coefficient for the geometry independent part of STyB

Volt/°K

-8.5e-4

POTVFB

Coefficient for the geometry independent part of STVFB

Volt/°K

5.0e-4

PWA1

Coefficient for the width dependent part of a1

None

0.0

PWA2

Coefficient for the width dependent part of a2

Volt

0.0

PWA3

Coefficient for the width dependent part of a3

None

0.0

PWAGIDL

Coefficient for the width dependent part of AGIDL

Amp/Volt3

0.0

PWALP

Coefficient for the width dependent part of a

None

0.0

PWBACC

Coefficient for the width dependent part of BACC

Volt

0.0

PWBET

Coefficient for the width dependent part of b

Amp-Volt-2

0.0

PWBGIDL

Coefficient for the width dependent part of BGIDL

Volt

0.0

PWBINV

Coefficient for the width dependent part of BINV

Volt

0.0

PWCGDO

Coefficient for the width dependent part of CGDO

Farad

0.0

PWCGIDL

Coefficient for the width dependent part of CGIDL

None

0.0

PWCGSO

Coefficient for the width dependent part of CGSO

Farad

0.0

PWCOX

Coefficient for the width dependent part of COX

Farad

0.0

PWETAMOB

Coefficient for the width dependent part of hMOB

None

0.0

PWIGACC

Coefficient for the width dependent part of IGACC

Amp/Volt2

0.0

PWIGINV

Coefficient for the width dependent part of IGINV

Amp/Volt2

0.0

PWIGOV

Coefficient for the width dependent part of IGOV

Amp/Volt2

0.0

PWKO

Coefficient for the width dependent part of KO

Volt½

0.0

PWMEXP

Coefficient for the width dependent part of 1/m

None

0.0

PWMO

Coefficient for the width dependent part of M0

None

0.0

PWNFA

Coefficient for the width dependent part of NFA

1/Volt-Meter4

0.0

PWNFB

Coefficient for the width dependent part of NFB

1/Volt-Meter2

0.0

PWNFC

Coefficient for the width dependent part of NFC

1/Volt

0.0

PWPHIB

Coefficient for the width dependent part of yB

Volt

0.0

PWSDIBL

Coefficient for the width dependent part of sDIBL

Volt

0.0

PWSSF

Coefficient for the width dependent part of sSF

Volt

0.0

PWTA1

Coefficient for the width dependent part of STA1

°K-1

0.0

PWTBGIDL

Coefficient for the width dependent part of STBGIDL

Volt/°K

0.0

PWTETABET

Coefficient for the width dependent part of hBET

None

0.0

PWTETAMOB

Coefficient for the width dependent part of hMOB

°K-1

0.0

PWTETAPH

Coefficient for the width dependent part of hPH

None

0.0

PWTETAR

Coefficient for the width dependent part of hR

None

0.0

PWTETASAT

Coefficient for the width dependent part of hSAT

None

0.0

PWTETASR

Coefficient for the width dependent part of hSR

None

0.0

PWTHEPH

Coefficient for the width dependent part of QPH

Volt-1

0.0

PWTHER

Coefficient for the width dependent part of QR

Volt-1

0.0

PWTHESAT

Coefficient for the width dependent part of QSAT

Volt-1

0.0

PWTHESR

Coefficient for the width dependent part of QSR

Volt-1

0.0

PWTHETH

Coefficient for the width dependent part of QTH

Volt-3

0.0

PWTNUEXP

Coefficient for the width dependent part of nEXP

None

0.0

PWTPHIB

Coefficient for the width dependent part of STyB

Volt/°K

0.0

PWTVFB

Coefficient for the width dependent part of STVFB

Volt/°K

0.0

THER1

Numerator of the gate voltage dependent part of series resistance for the reference transistor

Volt

0.0

THER2

Denominator of the gate voltage dependent part of series resistance for the reference transistor

Volt

1.0

TOX

Gate oxide layer thickness

Meter

3.2e-9

TR

Temperature at which the parameters for the reference transistor were determined

°C

21.0

VFB

Flatband voltage for the reference transistor at the reference temperature

Volt

-1.05

VFBOV

Flatband voltage for the source/drain overlap extensions

Volt

0.0

VP

Characteristic voltage for channel length modulation

Volt

5.0e-2

WOT

Effective reduction of the channel width per side due to the lateral diffusion of the channel stop dopant ions

Meter

0.0

WVAR

Difference between the actual width and the programmed field oxide opening

Meter

0.0


 


Level 63 MOSFET JUNCAP Model Parameters

Model Parameter

Description

Unit

Default

CJBR

Bottom junction capacitance at V=VR

Farad/Meter2

1.00e-12

CJGR

Gate edge-junction capacitance at V=VR

Farad/Meter

1.00e-12

CJSR

Sidewall junction capacitance at V=VR

Farad/Meter

1.00e-12

JSDBR

Bottom saturation-current density due to diffusion from back contact

Amp/Meter2

1.00e-3

JSDGR

Gate-edge saturation-current density due to diffusion from back contact

Amp/Meter

1.00e-3

JSDSR

Sidewall saturation-current density due to diffusion from back contact

Amp/Meter

1.00e-3

JSGBR

Bottom saturation-current density due to electron-hole generation at V=VR

Amp/Meter2

1.00e-3

JSGGR

Gate-edge saturation-current density due to electron-hole generation at V=VR

Amp/Meter

1.00e-3

JSGSR

Sidewall saturation-current density due to electron-hole generation at V=VR

Amp/Meter

1.00e-3

NB

Emission coefficient of the bottom forward current

None

1.0

NG

Emission coefficient of the gate-edge forward current

None

1.0

NS

Emission coefficient of the sidewall forward current

None

1.0

PB

Bottom junction grading coefficient

None

0.40

PG

Gate edge junction grading coefficient

None

0.40

PS

Sidewall junction grading coefficient

None

0.40

VDBR

Diffusion voltage of the bottom junction at T=TR

Volt

1.00

VB

Reverse breakdown voltage

Volt

0.9

VDGR

Diffusion voltage of the gate edge junction at T=TR

Volt

1.00

VDSR

Diffusion voltage of the sidewall junction at T=TR

Volt

1.00

VR

Voltage at which parameters have been determined

Volt

0.0


Notes on MOS 11011 Binning Geometry Scaling

Binning is a way to extend a single device architecture by providing systematic variations on the device parameters. The philosophy is that when you vary the channel geometry, other parameters also change, in ways that can be completely characterized by the device manufacturer. The manufacturer or foundry provides a “design kit” that contains a set of .MODEL statements specifying the parameter settings for the different geometries. The design kit with the .MODEL statements can be included in the Nexxim design as a subcircuit.

1. A binning model is identified by giving the model name in the .MODEL statement the form modelname.n, where the entry n after the decimal point can be an integer or any unique identifier. The MOSFET instance definition refers to the modelname without any extension. The netlist can contain any number of different binning models with the same base modelname. For example, three binning models could be named NMOS11011.1 NMOS11011.2, and NMOS11011.3. The instance statement would reference simply NMOS11011.

Each of the available binning models corresponds to a range of channel lengths and widths specified with the LMIN, LMAX, WMIN, and WMAX model parameters. The ranges must not overlap.

Each binning model typically specifies values for the model parameters that are related to the channel geometry variations.

2. The MOSFET instance statement must contain values for instance parameters L and W. The L and W parameters can be specified with variables so that a sweep of binning models can be performed.

3. The simulator finds the binning model to which the following conditions BOTH apply:

• The LMIN and LMAX model parameter range includes the value of instance parameter L (scaled by the instance parameter SCALE).

• The WMIN and WMAX model parameter range includes the value of instance parameter W (scaled by the instance parameter SCALE).

If none of the available binning models matches the L and W instance parameters, simulation does not proceed.

4. Within a MOS 11011 model, model parameters are adjusted by the effective channel length and width. There are three types of binning geometry adjustments. The formulas for the adjustment use the following symbols:

POx = value of the geometry-independent model parameter, for example PONFA.

PLx = value of the length dependence parameter, for example PLNFA.

PWx = value of the width dependence parameter, for example PWNFA.

PWLx = value of the cross dependence parameter, for example PWLNFA.

Le = L + LVAR - 2.0 * LAP = effective channel length.

We= W + LVAR - 2.0 * WOT = effective channel width.

Len = 1.0e-6 = normalized effective channel length.

Wen = 1.0e-6 = normalized effective channel width.

Type I adjustment:

Value = POx+PLx*(Len/Le)+PWx*(Wen/We)+PWLx*(Len/Le)*(Wen/We)

Type II adjustment:

Value = POx+PLx*(Le/Len)+PWx*(We/Wen)+PWLx*(Le/Len)*(We/Wen)

Type III adjustment:

Value = POx+PLx*(Len/Le)+PWx*(Wen/We)+PWLx*(We/Le)

5. The parameters that receive Type I adjustments are A1R, A2R, A3R, ALPR, BACC, BGIDL, BINV, CGIDL, ETABETR, ETAMOBR, ETAPH, ETAR, ETASAT, ETASR, KOR, MOO, MOR, NFAR, NFBR, NFCR, PHIBR, SDIBLO, SSFR, STA1, STBGIDL, STETAMOB, STPHIB, STVFB, THEPHR, THERR, THESAT, THESRR, THETHR.

6. The parameters that receive Type II adjustments are COX, IGACCR, IGINVR, IGOVR.

7. The parameters that receive Type III adjustments are AGIDL, BETA, CGDO, CGSO.

 




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