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MOSFET Levels 55 through 99 >
   Philips MOS1101 Version 11010 Physical MOSFET Model, (Level 63)       

Philips MOS1101 Version 11010 Physical MOSFET Model, (Level 63)

The Philips MOS Model 11 Version 11010 uses the physical geometry scaling rules. The syntax for a Philips MOS1100 MOSFET model (HSPICEÔ Level 63, Version 11010) is:

.MODEL modelname NMOS LEVEL=63 VERSION=11010 [parameter=val] ...

or

.MODEL modelname PMOS LEVEL=63 VERSION=11010 [parameter=val] ...

modelname is the name used by MOSFET instances to refer to this .MODEL statement. The LEVEL=63 entry selects the Philips MOS11 MOSFET model. The VERSION parameter selects among the 1100, 11010 physical geometry scaling, and 11011 binned geometry scaling versions of the MOS11 model. VERSION=11010 selects the Philips Level 11010 (MOS1101) physical scaling model.

See MOSFET Model, Philips MOS1100 Model for information on that MOSFET model.

See MOSFET Model, Philips MOS1101 Binned Model for information on that MOSFET model.

 


Level 63, Version 11010 MOSFET Model Parameters

Model Parameter

Description

Unit

Default

LEVEL

Level=63 selects the Philips MOS11 MOSFET model

Integer

1 (default if LEVEL parameter is omitted)

VERSION

Philips version selector

11010 is required to select the Philips MOS Model 11, Level 1101 (physical geometry scaling rules)

Integer

1100

A1R

Weak-avalanche current factor for the reference transistor at the reference temperature

None

6.0

A2R

Weak-avalanche current exponent for the reference transistor

Volt

38.0

A3R

Factor of drain-source voltage above which weak-avalanche occurs, for the reference transistor

None

1.0

AGIDLR

Gain factor for gate-induced drain leakage current for the actual transistor

Amp/Volt3

0.0

ALPEXP

Exponent of length dependence of aR

None

1.0

ALPR

Channel length modulation factor for the reference transistor

None

0.01

BACC

Probability factor for intrinsic gate tunneling current in accumulation

Volt

48

BETSQ

Gain factor for an infinite square transistor at the reference temperature

Amp/Volt2

NMOS: 3.709e-4

PMOS: 1.15e-4

BGIDL

Probability factor for gate-induced drain leakage current at the reference temperature

Volt

41.0

BINV

Probability factor for intrinsic gate tunnelingreference current in inversion

Volt

NMOS: 48

PMOS: 87.5

CGIDL

Factor for the lateral field dependence of the gate-induced drain leakage current

None

0.0

COL

Gate overlap capacitance

Farad

3.2e-16

ETABETR (ETABET)

Exponent of temperature dependence of gain factor

None

NMOS: 1.3

PMOS: 0.5

ETAMOBR

Effective field parameter for dependence on depletion/inversion charge for the reference transistor

None

NMOS: 1.4

PMOS: 3.0

ETAPH

Exponent of temperature dependence of QSR for the reference temperature

None

NMOS: 1.35

PMOS: 3.75

ETAR

Exponent of temperature dependence of QR

None

NMOS: 0.95

PMOS: 0.4

ETASR

Exponent of temperature dependence of QSR

None

NMOS: 0.65

PMOS: 0.5

ETASAT

Exponent of temperature dependence of QSAT

None

NMOS: 1.04

PMOS: 0.86

FBET1

Relative mobility decrease due to 1st lateral profile

None

0.0

FBET2

Relative mobility decrease due to 2nd lateral profile

None

0.0

GATENOISE

Flag for inclusion or exclusion of induced gate thermal noise

None

0.0

IGACCR

Gain factor for intrinsic gate tunneling current in accumulation for the reference transistor

Amp/Volt2

0.0

IGINVR

Gain factor for intrinsic gate tunneling current in inversion for the reference transistor

Amp/Volt2

0.0

IGOVR

Gain factor for source/drain overlap current for the reference transistor

Amp/Volt2

0.0

KOR

Body effect factor for the reference transistor

Volt½

0.5

KOV

Body effect factor for the source/drain overlap extensions

Volt½

2.5

KPINV

Inverse of body effect factor of the polysilicon gate

Volt½

0.0

LAP

Effective channel length reduction per side due to the lateral diffusion of the source/drain dopant ions

Meter

4.0e-8

LMIN (LLMIN)

Minimum effective channel length in technology, used for calculation of smoothing factor m.

Meter

1.5e-7

LP1

Characteristic length of the 1st lateral profile

Meter

8.0e-7

LP2

Characteristic length of the 2nd lateral profile

Meter

8.0e-7

LVAR

Difference between the actual length and the programmed polysilicon gate length

Meter

0.0

MOEXP

Exponent of length dependence of MO

None

1.34

MOO

Parameter for short-channel threshold slope

None

0.0

MOR

Parameter for short-channel subthreshold slope for the reference transistor

None

0.0

NFAR

1st flicker noise coefficient for the reference transistor

1/Volt-Meter4

NMOS: 1.573e23

PMOS: 3.825e24

NFBR

2nd flicker noise coefficient for the reference transistor

1/Volt-Meter2

NMOS: 4.752e9

PMOS: 1.015e9

NFCR

3rd flicker noise coefficient for the reference transistor

1/Volt

NMOS: 0.0

PMOS: 7.3e-8

NT

Thermal noise coefficient at the actual temperature

Joule

1.656e-20

NUEXP

Exponent of the temperature dependence of the parameter n

None

NMOS: 5.25

PMOS: 3.23

NU

Exponent of the field dependence of the mobility model minus 1 (i.e., ν -1) at the reference temperature

None

2.0

PHIBR

Surface potential at the onset of strong inversion at the reference temperature

Volt

0.95

SDIBLEXP

Exponent of the length dependence of sDIBL

None

1.35

SDIBLO

Drain-induced barrier lowering parameter for the reference transistor

Volt½

1.0e-4

SL2KO

2nd coefficient of the length dependence of K0

None

0.0

SL2PHIB

2nd coefficient of the length dependence of yB

None

0.0

SLA1

Coefficient of length dependence of a1

None

0.0

SLA2

Coefficient of length dependence of a2

None

0.0

SLA3

Coefficient of length dependence of a3

None

0.0

SLALP

Coefficient of length dependence of aR

None

1.0

SLETABET

Coefficient of length dependence of hBR

None

0.0

SLKO

Coefficient of length dependence of KO

None

0.0

SLPHIB

Coefficient of the length dependence of yB

None

0.0

SLSSF

Coefficient of length dependence of sSF

Meter

1.0

SLTHESAT

Coefficient of length dependence of QSAT

None

1.0

SSFR

Static feedback parameter for the reference transistor

Volt½

6.25e-3

STA1

Temperature dependence coefficient of a1

°K-1

0.0

STBGIDL

Coefficient of the temperature dependence of BGIDL

Volt/°K

-3.638e-4

STETAMOB

Temperature dependence coefficient of hMOB

°K-1

0.0

STPHIB

Coefficient of temperature dependence of yB

Volt/°K

-8.5e-4

STVFB

Coefficient of temperature dependence of VFB

Volt/°K

5.0e-4

SWA1

Coefficient of width dependence of a1

None

0.0

SWA2

Coefficient of width dependence of a2

None

0.0

SWA3

Coefficient of width dependence of a3

None

0.0

SWALP

Coefficient of width dependence of aR

None

0.0

SWETAMOB

Width dependence coefficient of hMOB

None

0.0

SWKO

Coefficient of width dependence of KO

None

0.0

SWPHIB

Width dependence coefficient of yB

None

0.0

SWSSF

Width dependence coefficient of sSF

None

0.0

SWTHEPH

Width dependence coefficient of QSR

None

0.0

SWTHER

Width dependence coefficient of QR

None

0.0

SWTHESAT

Width dependence coefficient of QSAT

None

0.0

SWTHESR

Width dependence coefficient of QSR

None

0.0

SWTHETH

Width dependence coefficient of QTH

None

0.0

THEPHR

Coefficient of the mobility reduction due to phonon scattering for the reference transistor at the reference temperature

Volt-1

NMOS: 1.29e-2

PMOS: 1e-3

THER1

Numerator of the gate voltage dependent part of series resistance for the reference transistor

Volt

0.0

THER2

Denominator of the gate voltage dependent part of series resistance for the reference transistor

Volt

1.0

THERR

Coefficient of the series resistance for the reference transistor at the reference temperature

Volt-1

NMOS: 0.155

PMOS: 0.08

THESATEXP

Exponent of the length dependence of QSAT

None

1.0

THESATR

Velocity saturation parameter due to optical/acoustic phonon scattering for the reference transistor at the reference temperature

Volt-1

NMOS: 0.5

PMOS: 0.2

THESRR

Coefficient of the mobility reduction due to surface roughness scattering for the reference transistor at the reference temperature

Volt-1

NMOS: 0.4

PMOS: 0.73

THETHEXP

Exponent of the length dependence of QTH

None

1.0

THETHR

Coefficient of self-heating for the reference transistor at the reference temperature

Volt-3

NMOS: 1.0e-3

PMOS: 0.5e-3

TOX

Gate oxide layer thickness

Meter

3.2e-9

TR

Temperature at which the parameters for the reference transistor were determined

°C

21.0

VFBOV

Flatband voltage for the source/drain overlap extensions

Volt

0.0

VFB (VFBR)

Flatband voltage for the reference transistor at the reference temperature

Volt

-1.05

VP

Characteristic voltage for channel length modulation

Volt

0.05

WOT

Effective reduction of the channel width per side due to the lateral diffusion of the channel stop dopant ions

Meter

0.0

WVAR

Difference between the actual width and the programmed field oxide opening

Meter

0.0


 


Level 63 MOSFET JUNCAP Model Parameters

Model Parameter

Description

Unit

Default

CJBR

Bottom junction capacitance at V=VR

Farad/Meter2

1.00e-12

CJGR

Gate edge-junction capacitance at V=VR

Farad/Meter

1.00e-12

CJSR

Sidewall junction capacitance at V=VR

Farad/Meter

1.00e-12

JSDBR

Bottom saturation-current density due to diffusion from back contact

Amp/Meter2

1.00e-3

JSDGR

Gate-edge saturation-current density due to diffusion from back contact

Amp/Meter

1.00e-3

JSDSR

Sidewall saturation-current density due to diffusion from back contact

Amp/Meter

1.00e-3

JSGBR

Bottom saturation-current density due to electron-hole generation at V=VR

Amp/Meter2

1.00e-3

JSGGR

Gate-edge saturation-current density due to electron-hole generation at V=VR

Amp/Meter

1.00e-3

JSGSR

Sidewall saturation-current density due to electron-hole generation at V=VR

Amp/Meter

1.00e-3

NB

Emission coefficient of the bottom forward current

None

1.0

NG

Emission coefficient of the gate-edge forward current

None

1.0

NS

Emission coefficient of the sidewall forward current

None

1.0

PB

Bottom junction grading coefficient

None

0.40

PG

Gate edge junction grading coefficient

None

0.40

PS

Sidewall junction grading coefficient

None

0.40

VDBR

Diffusion voltage of the bottom junction at T=TR

Volt

1.00

VB

Reverse breakdown voltage

Volt

0.9

VDGR

Diffusion voltage of the gate edge junction at T=TR

Volt

1.00

VDSR

Diffusion voltage of the sidewall junction at T=TR

Volt

1.00

VR

Voltage at which parameters have been determined

Volt

0.0


 




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