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MOSFET Levels 55 through 99 >
PSP 102.1 MOSFET Binning Model, Level 69, BINMOD=1

PSP 102.1 MOSFET Binning Model, Level 69, BINMOD=1

The syntax for a Level 69 PSP102.1 binning model MOSFET model is:

.MODEL modelname NMOS LEVEL=69 [(][parameter=val] ... [)]

.MODEL modelname PMOS LEVEL=69 [(][parameter=val] ... [)]

modelname is the name used by MOSFET instances to refer to this .MODEL statement. The LEVEL=69 entry (plus the parameter BINMOD=1 on the instance) selects the PSP 102.1 MOSFET binning model.

**Level 69 PSP 102.1 MOSFET Binning Model Selector Parameters**
Model Parameter	Description	Unit	Default
LEVEL	69 is required to select the PSP 102.1 MOSFET model. The instance parameter BINMOD=1 selects the binning model.	None	1 (default if LEVEL parameter is omitted)
SWIGATE	Flag for gate current (0 = off)	None	0
SWIMPACT	Flag for impact ionization current (0 = off)	None	0
SWGIDL	Flag for GIDL/GISL current (0 = off)	None	0
SWJUNCAP	Flag for JUNCAP model (0 = off)	None	0

**Level 69 PSP 102.1 MOSFET Binning Model Parameters**
Model Parameter	Description	Unit	Default
LVARO	Geometry-independent difference between actual and programmed polysilicon gate length	Meter	0.0
LVARL	Length dependence of difference between actual and programmed polysilicon gate length	None	0.0
LVARW	Width dependence of difference between actual and programmed polysilicon gate length	None	0.0
LAP	Effective channel length reduction per side due to lateral diffusion of channel-stop dopant ions	Meter	0.0
WVARO	Geometry-independent difference between actual and programmed field-oxide opening	Meter	0.0
WVARL	Length dependence of difference between actual and programmed field-oxide opening	None	0.0
WVARW	Width dependence of difference between actual and programmed field-oxide opening	None	0.0
WOT	Effective channel width reduction per side due to lateral diffusion of channel-stop dopant ions	Meter	0.0
TR (TREF, TNOM)	Reference temperature	°C	21.0
POVFB	Geometry-independent flat-band voltage at reference temperature	Volt	-1.0
PLVFB	Length dependence of flat-band voltage	None	0.0
PWVFB	Width dependence of flat-band voltage	None	0.0
PLWVFB	Area dependence of flat-band voltage	None	0.0
POSTVFB	Geometry-independent temperature dependence of flat-band voltage	Volt/°K	5.0e-4
PLSTVFB	Length dependence of temperature dependence of flat-band voltage	None	0.0
PWSTVFB	Width dependence of temperature dependence of flat-band voltage	None	0.0
PLWSTVFB	Area dependence of temperature dependence of flat-band voltage	None	0.0
POTOX	Gate oxide thickness	Meter	2.0e-9
PONEFF	Geometry-independent substrate doping	1/Meter³	5.0e23
PLNEFF	Length dependence of substrate doping due to segregation	None	0.0
PWNEFF	Width dependence of substrate doping due to segregation	None	0.0
PLWNEFF	Area dependence of substrate doping due to segregation	None	0.0
POVNSUB	Effective doping bias-dependence parameter	Volt	0.0
PONSLP	Effective doping bias-dependence parameter	Volt	0.05
PODNSUB	Effective doping bias-dependence parameter	1/Volt	0.0
PONP	Geometry-independent gate polysilicon doping	1/Meter³	1.0e26
PLNP	Length dependence of gate polysilicon doping	None	0.0
PWNP	Width dependence of gate polysilicon doping	None	0.0
PLWNP	Area dependence of gate polysilicon doping	None	0.0
QMC	Quantum-mechanical correction factor	None	1
POCT	Geometry-independent part of interface states factor CT	None	0.0
PLCT	Length dependence of interface states factor CT	None	0.0
PWCT	Width dependence of CT	None	0.0
PLWCT	Area dependence of CT	None	0.0
POTOXOV	Overlap oxide thickness	Meter	2.0e-9
PONOV	Effective doping of overlap region	1/Meter³	5.0e25
PLNOV	Length dependence of overlap region	Meter	0.0
PWNOV	Width dependence of overlap region	Meter	0.0
PLWNOV	Area dependence of overlap region	Meter	0.0

**Level 69 PSP 102.1 Binned Model MOSFET DIBL Parameters**
Model Parameter	Description	Unit	Default
POCF	Geometry-independent drain-bias dependence of lateral gradient factor CF		0.0
PLCF	Length dependence of drain-bias dependence of lateral gradient factor CF		0.0
PWCF	Width dependence of drain-bias dependence of lateral gradient factor CF	None	0.0
PLWCF	Area dependence of drain-bias dependence of lateral gradient factor CF	None	0.0
POCFB	Back-bias dependence of drain-bias dependence of lateral gradient factor CF	1/Volt	0.0

**Level 69 PSP 102.1 Binned Model MOSFET Mobility Parameters**
Model Parameter	Description	Unit	Default
POBETN	Geometry-independent BETN		0.07
PLBETN	Length dependence of BETN		0.0
PWBETN	Width dependence of BETN		0.0
PLWBETN	Area dependence of BETN		0.0
POSTBET	Geometry-independent temperature dependence of BETN		1.0
PLSTBET	Length dependence of temperature dependence of BETN		0.0
PWSTBET	Width dependence of temperature dependence of BETN		0.0
PLWSTBET	Area dependence of temperature dependence of BETN		0.0
POMUE	Geometry-independent mobility reduction coefficient MUE at reference temperature	Meter/Volt	0.5
PLMUE	Length dependence of mobility reduction coefficient MUE at reference temperature	None	0.0
PWMUE	Width dependence of mobility reduction coefficient MUE at reference temperature	None	0.0
PLWMUE	Area dependence of mobility reduction coefficient MUE at reference temperature	None	0.0
POSTMUE	Temperature dependence of MUE	None	0.0
POTHEMU	Mobility reduction exponent at reference temperature	None	1.5
POSTTHEMU	Temperature dependence of mobility reduction exponent THEMU	None	1.5
POCS	Geometry-independent Coulomb scattering parameter CS at reference temperature	None	0.0
PLCS	Length dependence of Coulomb scattering parameter CS	None	0.0
PWCS	Width dependence of Coulomb scattering parameter CS	None	0.0
PLWCS	Area dependence of Coulomb scattering parameter CS	None	0.0
POSTCS	Temperature dependence of CS	None	0.0
POXCOR	Geometry-independent non-universality parameter	1/Volt	0.0
PLXCOR	Length dependence of XCOR	None	0.0
PWXCOR	Width dependence of XCOR	None	0.0
PLWXCOR	Area dependence of XCOR	None	0.0
POSTXCOR	Temperature dependence of XCOR	None	0.0

**Level 69 Binned Model MOSFET Series Resistance Parameters**
Model Parameter	Description	Unit	Default
PORS	Source/drain series resistance for a channel width of 1mm at reference temperature	Ohm	30.0
PLRS	Length dependence of RS		0.0
PWRS	Width dependence of RS		0.0
PLWRS	Area dependence of RS		0.0
POSTRS	Temperature dependence of source/drain series resistance	None	1.0
PORSB	Back-bias dependence of series resistance	1/Volt	0.0
PORSG	Gate-bias dependence of series resistance	1/Volt	0.0

**Level 69 Binned Model MOSFET Velocity Saturation Parameters**
Model Parameter	Description	Unit	Default
POTHESAT	Geometry-independent velocity saturation parameter at reference temperature	1/Volt	0.0
PLTHESAT	Length dependence of velocity saturation parameter at reference temperature	1/Volt	0.0
PWTHESAT	Width dependence of velocity saturation parameter at reference temperature	None	0.0
PLWTHESAT	Area dependence of velocity saturation parameter at reference temperature	None	0.0
POSTTHESAT	Geometry-independent temperature dependence of THESAT	None	1.0
PLSTTHESAT	Length dependence of STTHESAT	None	0.0
PWSTTHESAT	Width dependence of STTHESAT	None	0.0
PLWSTTHESAT	Area dependence of STTHESAT	None	0.0
POTHESATB	Back-bias dependence ot THESAT	1/Volt	0.0
PLTHESATB	Length dependence of Back-bias dependence ot THESAT	None	0.0
PWTHESATB	Width dependence of back-bias dependence ot THESAT	None	0.0
PLWTHESATB	Area dependence of back-bias dependence ot THESAT	None	0.0
POTHESATG	Gate-bias dependence of THESAT	1/Volt	0.0
PLTHESATG	Length dependence of gate-bias dependence of THESAT	None	0.0
PWTHESATG	Width dependence of gate-bias dependence of THESAT	None	0.0
PLWTHESATG	Area dependence of gate-bias dependence of THESAT	None	0.0

**Level 69 Binned Model MOSFET Saturation Voltage Parameters**
Model Parameter	Description	Unit	Default
POAX	Geometry-independent linear/saturation transition parameter	None	3.0
PLAX	Length dependence of AX	None	0.0
PWAX	Width dependence of AX	None	0.0
PLWAX	Area dependence of AX	None	0.0

**Level 69 Binned Model MOSFET CLM Parameters**
Model Parameter	Description	Unit	Default
POALP	Geometry-independent CLM prefactor ALP		0.01
PLALP	Length dependence of CLM prefactor ALP	None	0.0
PWALP	Width dependence of ALP	None	0.0
PLWALP	Area dependence of ALP	None	0.0
POALP1	Geometry-independent CLM prefactor above threshold ALP1		0.0
PLALP1	Length dependence of CLM prefactor above threshold ALP1	Volt	0.0
PWALP1	Width dependence of ALP1	None	0.0
PLWALP1	Area dependence of ALP1	None	0.0
POALP2	Geometry-independent CLM prefactor below threshold ALP2	None	0.0
PLALP2	Length dependence of ALP2	Volt	0.0
PWALP2	Width dependence of ALP2	None	0.0
PLWALP2	Area dependence of ALP2	None	0.0
POVP	CLM logarithmic dependence factor	Volt	0.05

**Level 69 Binned Model MOSFET Impact Ionization Parameters**
Model Parameter	Description	Unit	Default
POA1	Geometry-independent part of impact-ionization prefactor A1	None	1.0
PLA1	Length dependence of A1	None	0.0
PWA1	Width dependence of A1	None	0.0
PLWA1	Area dependence of A1	None	0.0
POA2	Impact-ionization exponent at reference temperature	Volt	10.0
POSTA2	Temperature dependence of A2	Volt	0.0
POA3	Geometry-independent saturation voltage dependence of impact ionization	None	1.0
PLA3	Length dependence of A3	None	0.0
PWA3	Width dependence of A3	None	0.0
PLWA3	Area dependence of A3	None	0.0
POA4	Geometry-independent back-bias dependence of impact ionization	Volt^0.5	0.0
PLA4	Length dependence of A4	None	0.0
PWA4	Width dependence of A4	None	0.0
PLWA4	Area dependence of A4	None	0.0

**Level 69 Binned Model MOSFET Gate Currrent Parameters**
Model Parameter	Description	Unit	Default
POGCO	Gate tunneling energy adjustment	None	0.0
POIGINV	Gate channel prefactor for a gate channel area of 1mm²		0.0
PLIGINV	Length dependence of Iginv		0.0
PWIGINV	Width dependence of Iginv		0.0
PLWIGINV	Area dependence of Iginv	Ampere	0.0
POIGOV	Gate overlap prefactor for a channel width of 1mm		0.0
PLIGOV	Length dependence of Igov		0.0
PWIGOV	Width dependence of Igov		0.0
PLWIGOV	Area dependence of Igov	Ampere	0.0
POSTIG	Temperature dependence of gate current	None	2.0
POGC2	Gate current slope factor	None	0.375
POGC3	Gate current curvature factor	None	0.063
POCHIB	Tunneling barrier height	Volt	3.1

**Level 69 Binned Model MOSFET GIDL Parameters**
Model Parameter	Description	Unit	Default
POAGIDL	Geometry-independent GIDL prefactor		0.0
PLAGIDL	Length dependence of GIDL prefactor		0.0
PWAGIDL	Width dependence of GIDL prefactor	Ampere/Volt³	0.0
PLWAGIDL	Area dependence of GIDL prefactor		0.0
POBGIDL	GIDL probability factor at reference temperature	Volt	41.0
POSTBGIDL	Temperature dependence of BGIDL	Volt/°K	0.0
POCGIDL	Back-bias dependence of GIDL	None	0.0

**Level 69 Binned Model MOSFET Charge Model Parameters**
Model Parameter	Description	Unit	Default
POCGBOV	Oxide capacitance for gate-bulk overlap for an area of 1mm²	Farad	0.0
PLCGBOV	Length dependence of CGBOV		0.0
PWCGBOV	Width dependence of CGBOV		0.0
PLWCGBOV	Area dependence of CGBOV		0.0
POCFR	Outer fringe capacitance for a channel width of 1mm	Farad	0.0
PLCFR	Length dependence of CFR		0.0
PWCFR	Width dependence of CFR		0.0
PLWCFR	Area dependence of CFR		0.0

**Level 69 Binned Model MOSFET Noise Model Parameters**
Model Parameter	Description	Unit	Default
POFNT (FNTO)	Thermal noise coefficient	None	1.0
PONFA	First coefficient of flicker noise for a channel area of 1mm²	1/Volt-Meter⁴	8.0e22
PLNFA	Length dependence of NFA		0.0
PWNFA	Width dependence of NFA		0.0
PLWNFA	Area dependence of NFA		0.0
PONFB	Second coefficient of flicker noise for a channel area of 1mm²	1/Volt-Meter²	3.0e7
PLNFB	Length dependence of NFB		0.0
PWNFB	Width dependence of NFB		0.0
PLWNFB	Area dependence of NFB		0.0
PONFC	Third coefficient of flicker noise for a channel area of 1mm²	1/Volt	0.0
PLNFC	Length dependence of NFC		0.0
PWNFC	Width dependence of NFC		0.0
PLWNFC	Area dependence of NFC		0.0

**Level 69 Binned Model MOSFET Temperature Offset Parameters**
Model Parameter	Description	Unit	Default
DTA	Temperature offset from ambient circuit temperature	°K	0.0

**Level 69 Binned Model MOSFET Stress Model Parameters**
Model Parameter	Description	Unit	Default
SAREF	Reference distance between OD edge to poly from one side	Meter	1e-6
SBREF	Reference distance between OD edge to poly from the other side	Meter	1e-6
WLOD	Width parameter	Meter	0.0
KUO	Mobility degradation/enhancement coefficient	Meter	0.0
KVSAT	Saturation velocity degradation/enhancement parameter	Meter	0.0
TKUO	Temperature coefficient of KUO	None	0.0
LKUO	Length dependency of KUO	Meter^LLODKUO	0.0
WKUO	Width dependency of KUO	Meter^WLODKUO	0.0
PKUO	Area dependency of KUO	Meter^{LLODKUO+WLODKUO}	0.0
LLODKUO	Length parameter for mobility stress effect	None	0.0
WLODKUO	Width parameter for mobility stress effect	None	0.0
KVTHO	Threshold shift parameter	Volt-Meter	0.0
LKVTHO	Length dependency of KVTHO	Meter^LLODVTH	0.0
WKVTHO	Width dependency of KVTHO	Meter^WLODVTH	0.0
PKVTHO	Area dependency of KVTHO	Meter^{LLODVTH+WLODVTH}	0.0
LLODVTH	Length parameter for threshold voltage stress effect	None	0.0
WLODVTH	Width parameter for threshold voltage stress effect	None	0.0
STETAO	ETAO shift factor related to threshold voltage change	Meter	0.0
LODETAO	ETAO shift modification factor	None	1.0

**Level 69 Binned Model MOSFET Basic Junction Model Parameters**
Model Parameter	Description	Unit	Default
TRJ	Reference temperature	°C	21.0
IMAX	Maximum current up to which forward current behaves exponentially	Ampere	1000.0

**Level 69 Binned Model MOSFET JUNCAP2 Capacitance Parameters**
Model Parameter	Description	Unit	Default
CJORBOT	Zero-bias capacitance per unit area of bottom component	Farad/Meter²	1.0e-3
CJORSTI	Zero-bias capacitance per unit length of STI-edge component	Farad/Meter	1.0e-9
CJORGAT	Zero-bias capacitance per unit length of gate-edge component	Farad/Meter	1.0e-9
VBIRBOT	Built-in voltage at the reference temperature of bottom component	Volt	1.0
VBIRSTI	Built-in voltage at the reference temperature of STI-edge component	Volt	1.0
VBIRGAT	Built-in voltage at the reference temperature of gate-edge component	Volt	1.0
PBOT	Grading coefficient of bottom component	None	0.5
PSTI	Grading coefficient of STI-edge component	None	0.5
PGAT	Grading coefficient of gate-edge component	None	0.5

**Level 69 Binned Model MOSFET JUNCAP2 Ideal Current Parameters**
Model Parameter	Description	Unit	Default
PHIGBOT	Zero-temperature bandgap voltage of bottom component	Volt	1.16
PHIGSTI	Zero-temperature bandgap voltage of STI-edge component	Volt	1.16
PHIGGAT	Zero-temperature bandgap voltage of gate-edge component	Volt	1.16
IDSATRBOT	Saturation current density at the reference temperature of bottom component	Ampere/Meter²	1.0e-12
IDSATRSTI	Saturation current density at the reference temperature of STI-edge component	Ampere/Meter	1.0e-18
IDSATRGAT	Saturation current density at the reference temperature of gate-edge component	Ampere/Meter	1.0e-18
CSRHBOT	Shockley-Read-Hall prefactor of bottom component	Ampere/Meter³	1.0e2
CSRHSTI	Shockley-Read-Hall prefactor of STI-edge component	Ampere/Meter²	1.0e-4
CSRHGAT	Shockley-Read-Hall prefactor of gate-edge component	Ampere/Meter²	1.0e-4
XJUNSTI	Junction depth of STI-edge component	Meter	1.0e-7
XJUNGAT	Junction depth of gate-edge component	Meter	1.0e-7
CTATBOT	Trap-assisted tunneling prefactor of bottom component	Ampere/Meter³	1.0e2
CTATSTI	Trap-assisted tunneling prefactor of STI-edge component	Ampere/Meter²	1.0e-4
CTATGAT	Trap-assisted tunneling prefactor of gate-edge component	Ampere/Meter²	1.0e-4
MEFFTATBOT	Effective mass (in units of m₀) for trap-assisted tunneling of bottom component	None	0.25
MEFFTATSTI	Effective mass (in units of m₀) for trap-assisted tunneling of STI-edge component	None	0.25
MEFFTATGAT	Effective mass (in units of m₀) for trap-assisted tunneling of gate-edge component	None	0.25

**Level 69 Binned Model MOSFET JUNCAP2 Band-to-Band Tunneling Parameters**
Model Parameter	Description	Unit	Default
CBBTBOT	Band-to-band tunneling prefactor of bottom component	Ampere/Volt³	1.0e-12
CBBTSTI	Band-to-band tunneling prefactor of STI-edge component	Ampere-Meter/Volt³	1.0e-18
CBBTGAT	Band-to-band tunneling prefactor of gate-edge component	Ampere-Meter/Volt³	1.0e-18
FBBTRBOT	Normalization field at the reference temperature for band-to-band tunneling prefactor of bottom component	Volt/Meter	1.0e9
FBBTRSTI	Normalization field at the reference temperature for band-to-band tunneling prefactor of STI-edge component	Volt/Meter	1.0e9
FBBTRGAT	Normalization field at the reference temperature for band-to-band tunneling prefactor of gate-edge component	Volt/Meter	1.0e9
STFBBTBOT	Temperature scaling parameter for band-to-band tunneling prefactor of bottom component	1/°K	-1.0e-3
STFBBTSTI	Temperature scaling parameter for band-to-band tunneling prefactor of STI-edge component	1/°K	-1.0e-3
STFBBTGAT	Temperature scaling parameter for band-to-band tunneling prefactor of gate-edge component	1/°K	-1.0e-3

**Level 69 Binned Model MOSFET JUNCAP2 Avalanche and Breakdown Parameters**
Model Parameter	Description	Unit	Default
VBRBOT	Breakdown voltage of bottom component	Volt	10.0
VBRSTI	Breakdown voltage of STI-edge component	Volt	10.0
VBRGAT	Breakdown voltage of gate-edge component	Volt	10.0
PBRBOT	Breakdown onset tuning parameter of bottom component	Volt	4.0
PBRSTI	Breakdown onset tuning parameter of STI-edge component	Volt	4.0
PBRGAT	Breakdown onset tuning parameter of gate-edge component	Volt	4.0

**Level 69 Geometric Model MOSFET NQS Model Parameters**
Model Parameter	Description	Unit	Default
SWNQS	Switch for NQS effects 0 = off 1,2,3,5, or 9 = number of collocation points	None	0
MUNQSO	Relative mobility for NQS modeling	None	1.0
RGO	Gate resistance R_gate	Ohm	1.0e-3
RBULKO	Bulk resistance R_bulk	Ohm	1.0e-3
RWELLO	Well resistance R_well	Ohm	1.0e-3
RJUNSO	Source-side bulk resistance R_juns	Ohm	1.0e-3
RJUNDO	Drain-side bulk resistance R_jund	Ohm	1.0e-3

**Level 69 Geometric Model MOSFET PSP 101 Compatibility Parameters**
Model Parameter	Description	Unit	Default
DLQ	Effective channel length reduction for CV	Meter	0.0
DWQ	Effective channel width reduction for CV	Meter	0.0
PODPHIB	Geometry-independent offset of PHIB	Volt	0.0
PLDPHIB	Length dependence of DPHIB	Volt	0.0
PWDPHIB	Width dependence of DPHIB	None	0.0
PLWDPHIB	Area dependence of DPHIB	None	0.0
POFETA	Effective field parameter	None	1.0
POCOX	Geometry independent oxide capacitance	Farad	1e-14
PLCOX	Length dependence of COX	None	0.0
PWCOX	Width dependence of COX	None	0.0
PLWCOX	Area dependence of COX	None	0.0
POCGOV	Geometry independent gate overlay capacitance	Farad	1e-15
PLCGOV	Length dependence of CGOV	None	0.0
PWCGOV	Width dependence of CGOV	None	0.0
PLWCGOV	Area dependence of CGOV	None	0.0

PSP 102.1 MOSFET Binning Model Equations

Refer to the Local Model PSP102.1 for equations.

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