• 首页
• HFSS教程
• ADS教程
• CST教程
• 射频工程师培训
• 微波仪器操作培训
• 天线设计培训
• 射频专业基础课

Ansoft Designer / Ansys Designer 在线帮助文档：

Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 55 through 99 >
   PSP 102.1 MOSFET Local Model (Level 69, BINMOD=0, GEOMOD=0)       

PSP 102.1 MOSFET Local Model (Level 69, BINMOD=0, GEOMOD=0)

The syntax for a Level 69 PSP102.1 local model MOSFET model is:

.MODEL modelname NMOS LEVEL=69 [(][parameter=val] ... [)]

or

.MODEL modelname PMOS LEVEL=69 [(][parameter=val] ... [)]

modelname is the name used by MOSFET instances to refer to this .MODEL statement. The LEVEL=69 entry (plus the parameters BINMOD=0 and GEOMOD=0 on the instance) selects the PSP 102.1 MOSFET local model.

PSP 102.1 Geometry and Stress Dependence Model Equations

1 Geometrical Scaling Equations

1.1 Effective Length and Width

L_EN = 10^-6

W_EN = 10^-6

L_E = L - DL = L + DL_PS - 2 ´ LAP

W_E = W - DW = W + DW_OD - 2 ´ WOT

L_E,CV = L + DL_PS - 2 ´ LAP + DLQ

W_E,CV = W + DW_OD - 2 ´ LAP + DWQ

L_G,CV = L + DL_PS + DLQ

W_G,CV = W + DW_OD + DWQ

1.2 Process Parameters

For L_E < L_pckeff

For L_pckeff < L_E < 2L_pckeff

For L_E > 2L_pckeff

Where:

a = 7.5´10¹⁰

VNSUB = VNSUBO

NSLPB = NSLPO

DNSUB = DNSUBO

TOXOV = TOXOVO

NOV = DNOVO

1.3 DIBL Parameters

CFB = CFBO

1.4 Mobility Parameters

STMUE = STMUEO

THEMU = THEMUO

STTHEMU = STTHEMUO

STCS = STCSO

STXCOR = STXCORO

FETA = FETAO

1.5 Series Resistance Parameters

STRS = STRSO

RSB = RSBO

RSG = RSGO

1.6 Velocity Saturation Parameters

THESATB = THESATBO

THESATG = THESATGO

1.7 Saturation Voltage Parameter

1.8 Channel Length Modification (CLM) Parameters

VP = VPO

1.9 Impact Ionization (II) Parameters

A2 = A2O

STA2 = STA2O

1.10 Gate Current Parameters

GCO = GCOO

STIG = STIGO

A2 = A2O

GC2 = GC2O

GC3 = GC3O

CHIB = CHIBO

1.11 Gate-Induced Drain Leakage (GIDL) Parameters

BGIDL = BGIDLO

STBGIDL = STBGIDLO

CGIDL = CGIDLO

1.12 Charge Model Parameters

1.12 Noise Model Parameters

2. Binning Model Equations

Within a PSP 102.1 model, model parameters are adjusted by the effective channel length and width. There are four types of binning geometry adjustments. The formulas for the adjustment use the following symbols:

POx = value of the geometry-independent model parameter “x”, for example POVFB.

PLx = value of the length dependence parameter “x”, for example PLVFB.

PWx = value of the width dependence parameter “x”, for example PWVFB.

PWLx = value of the cross dependence parameter “x”, for example PLWVFB.

Le = effective channel length.

We= effective channel width.

Len = normalized effective channel length.

Wen = normalized effective channel width.

Type I adjustment:

Value = POx+PLx*(Len/Le)+PWx*(Wen/We)+PLWx*(Len/Le)*(Wen/We)

Type II adjustment:

Value = POx+PLx*(Le/Len)+PWx*(We/Wen)+PLWx*(Le/Len)*(We/Wen)

Type III adjustment:

Value = POx+PLx*(Len/Le)+PWx*(We/Wen)+PLWx*(Len/Le)*(We/Wen)

Type IV adjustment (no binning):

Value = POx

The parameters that receive Type I adjustments are VFB, STVFB, NEFF, DPHIB, NP, CT, NOV, CF, STBET, MUE, CS, XCOR, RS, THESAT, STTHESAT, THESATB, THESATG, AX, ALP, ALP1, ALP2, A1, A3, A4, NFA, NFB, NFC.

The parameters that receive Type II adjustments are IGINV, COX, CGBOV.

The parameters that receive Type III adjustments are BETN, IGOV, AGIDL, CGOV, CFR.

2.1 Effective Length and Width for Binning Parameters

L_EN = 10^-6

W_EN = 10^-6

L_E = L - DL = L + DL_PS - 2 ´ LAP

W_E = W - DW = W + DW_OD - 2 ´ WOT

L_E,CV = L + DL_PS - 2 ´ LAP + DLQ

W_E,CV = W + DW_OD - 2 ´ WOT + DWQ

L_G,CV = L + DL_PS + DLQ

W_G,CV = W + DW_OD + DWQ

3. Parameter Modifications due to Stress Effects

3.1 Layout Effects for Regular Shapes

3.2 Layout Effects for Irregular Shapes

3.3 Calculation of Parameter Modifications

3.3.1 Threshold Voltage Equations

DR = R_A + R_B - R_A,ref - R_B,ref

4. Internal Parameters including Temperature Scaling

4.1 Transistor Temperature

T_KR = T₀ + T_R

T_KD = T₀ + T_A + DTA

DT = T_KD -T_KR

4.2 Local Process Parameters

VFB = VFB + STVFB ´ DT

C_ox = e_ox/TOX

4.3 Polysilicon Depletion Parameters

4.3.1 If NP = 0

k_P = 0

4.3.2 If NP > 0

4.4 Quantum-Mechanical Correction Parameters

q_lim = 10 f_T

For NMOS:

For PMOS:

4.5 V_SB-Clipping Parameters

f_X = 0.95 ´ f_B

4.6 Local Process Parameters in Gate Overlap Regions

4.7 Mobility Parameters

For NMOS:

h_m = FETA/2

For PMOS:

h_m = FETA/3

4.7 Series Resistance Parameters

4.7 Velocity Saturation Parameters

4.8 Impact Ionization Parameters

4.9 Gate Current Parameters

For GC3 < 0:

For GC3 ³ 0:

GC_{Q =} 0

4.10 Gate-Induced Drain Leakage (GIDL) Parameters

4.11 Noise Parameters

4.12 Additional Internal Parameters

x₁ = 1.25

5. Model Internal Equations

5.1 Conditioning of Terminal Voltages

5.1.1 Drain-Induced Barrier Lowering

DV_G = CF ´ V_dsx ´ (1 + CFB ´ V_sbx)

5.2 Bias-Dependent Body Factor

5.3 Surface Potential at Source Side and Related Variables

5.3.1 If x_g < -x_mrg

y_g = -x_g

y₀ = s₁(a, c, t, h)

D₀ = exp(y₀)

p = 2(y_g - y₀) + G²(D₀ - 1 + D_ns[1 - c’(y₀) - 1/D₀])

q = (y_g - y₀)² + G²(y₀ - D₀ + 1 + D_ns[1 + c’(y₀) - 1/D₀ - 2y₀])

5.3.2 If |x_g| £ x_mrg

5.3.3 If x_g > x_mrg

b_x = x_ns + 3

a = (x_g - h)² - G²(exp[-h] + h -1 -D_ns[h + 1 + c(h)])

y0 = s2(a, b, c, t, h)

D₀ = exp(y₀)

5.3.4 For x_g > 0

E_s = exp(-xs)

P_s = x_s - 1 + E_s

5.3.5 For All x_g

5.4 Drain Saturation Voltage (x_g > 0)

5.4.1 For RSB ³ 0

r_b = 1 + RSB ´ V_sbx

5.4.2 For RSB < 0

5.4.3 For RSG ³ 0

5.4.4 For RSG < 0

r_g,s = 1 - RSG ´ q_is

r_s = q_R ´ r_b´ r_g,s ´ q_is

E_eff,s = E_eff0 (q_bs + h_m ´ q_is)

5.4.5 For THESATB ³ 0

x_tb = 1 + THESATB ´ V_sbx

5.4.6 For THESATB < 0

5.4.7 For THESATG ³ 0

5.4.8 For THESATG < 0

5.4.9 For NMOS

5.4.10 For PMOS

5.4 Surface Potential at Drain Side and Related Variables

5.4.1 For (x_g > 0)

5.4.1.1 If x_g £ x_mrg

5.4.1.2 If x_g > x_mrg

bx = x_nd + 3.0

5.4.1.3 For All (x_g > 0)

x_ds = x_d - x_s

5.4.1.4 If x_ds < 10^-10

x_ds = x_d + x_s

5.4.1.5 For All x_ds

5.4.1 For All x_g

5.5 Mid-Point Surface Potential and Related Variables

5.5.1 If x_g > 0

P_m = x_m - 1 + E_m

5.5.2 If x_g £ 0

x_m = x_s

x_gm = x_g - x_s

5.6 Polysilicon Depletion

The equations in this section are calculated only for k_p > 0 and x_g > 0 (otherwise h_p = 1)

P_m = x_m - 1 + E_m

5.6 Potential Midpoint Inversion Charge and Related Variables

The equations in this section are calculated only for x_g > 0

5.6.1 Series Resistance

5.6.1.1 for RSG ³ 0

5.6.1.2 for RSG < 0

5.6.1.3 For All RSG

5.6.2 Mobility Reduction

5.6 Drain-Source Channel Current

The equations in this section are calculated only for x_g > 0

5.6.1 Channel Length Modulation

5.6.2 Velocity Saturation

5.6.2.1 For THESATG ³ 0

5.6.2.1 For THESATG < 0

5.6.2.3 For NMOS

5.6.2.3 For PMOS

5.6.2.4 For All THESATG, NMOS and PMOS

5.6.3 Drain-Source Channel Current

5.6.3.1 For x_g £ 0

I_DS = 0

5.6.3.2 For x_g > 0

5.6 Auxiliary Variables for Calculating Intrinsic Charges and Gate Current

The equations in this section are calculated only for x_g > 0

5.7 Impact Ionization or Weak Avalanche

The equations in this section are calculated only for SWIMPACT = 1 and x_g > 0

5.7.1 For DV_sat £ 0

M_avl = 0

5.7.2 For DV_sat > 0

5.7.3 For all DV_sat

5.7.4 Calculation of x_ov when x_g < -x_mrgov

y_g = -x_g

5.7.5 Calculation of x_ov when | x_g | < x_mrgov

5.7.4 Calculation of x_ov when x_g > x_mrgov

5.7.5 For All x_g

5.8 Gate Current

The equations in this section are calculated only when SWIGATE = 1.

5.8.1 Source/Drain Gate Overlap Current

5.8.1.1 Calculation of [I_Gov(V_GX, y_ov, V_ov)]

5.8.1.1.1 z_g Calculation For GC3 < 0

5.8.1.1.2 z_g Calculation For GC3 ³ 0

5.8.1.1 Calculation of [I_Gov(V_GX, y_ov, V_ov)], Continued

5.8.1.2 Source-Drain Gate Overlap Current, Continued

5.8.2 Gate-Channel Current

5.8.2.1 z_g Calculation For GC3 < 0

5.8.2.2 z_g Calculation For GC3 ³ 0

5.8.2.3 Gate-Channel Current, Continued

5.8.2.4 Calculation of P_gc and P_gd when x_g > 0

5.8.2.4 Calculation of P_gc and P_gd when x_g £ 0

P_gc = 1

P_gd = 1/2

5.8.2.5 Gate-Channel Current, Continued

5.9 Gate-Induced Drain/Source Leakage Current

The equations in this section are calculated only when SWIGIDL = 1.

5.9.1 Calculation of I_gixl(V_ov,V)

5.9.1.1 For V_ov < 0

5.9.1.1 For V_ov ³ 0

I_gixl = 0

5.9.2 Gate-Induced Drain/Source Leakage Current, Continued

5.10 Total Terminal Currents

I_D = I_DS + I_avl - I_GDov - I_GCD + I_gidl

I_S = -I_DS - I_GSov - I_GCS + I_gisl

I_G = I_GC + I_GB + I_GDov - I_GSov

I_B = -I_avl - I_GB - I_gidl - I_gisl

5.11 Quantum-Mechanical Corrections

5.11.1 Calculation of q_eff for x_g £ 0

q_eff = V_oxm

5.11.2 Calculation of q_eff for x_g > 0

5.11.3 Calculation of C_OX^qm for q_q = 0

5.11.4 Calculation of C_OX^qm for q_q > 0

5.12 Intrinsic Charge Model

5.12.1 Calculation of Q_G⁽ⁱ⁾ , Q_I^{(i) ,} Q_D⁽ⁱ⁾ for x_g > 0

5.12.2 Calculation of Q_G⁽ⁱ⁾ , Q_I^{(i) ,} Q_D⁽ⁱ⁾ for x_g £ 0

5.12.3 Intrinsic Charge Model, Continued

5.13 Extrinsic Charge Model

5.13.1 Source and Drain Overlap Regions

5.13.2 Bulk Overlap Region

5.13.3 Outer Fringe

5.14 Total Terminal Charges

5.15 Noise Model

5.15.1 Flicker Noise Model

The equations in this section are calculated only for x_g < 0.

f_op = operating frequency supplied by the simulator

5.15.2 Gate Current Shot Noise

5.15.3 Avalanche Current Shot Noise

5.15.4 Thermal White Noise of NQS-Model Parasitic resistances

6 NQS Model Equations

Notes:

1. y is the normalized position along the channel (y=0 is the source side, y=1 is the drain side).

2. x is the surface potential (normalized to f_T^*) at a given position.

6.1 Internal Constants

6.1.1 Internal Constants n and h

n = SWNQS + 1

h = 1/n

6.1.2 Matrix A (n+1)´(n+1)

6.1.2.1 Initial Values

For i = 1 to (n-1):

A_i,j = 0

For i = 1 to n:

v_i = 0

6.1.2.1 First Loop

For i = 1 to (n-1):

For j = 0 to n:

6.1.2.2 Second Loop (Back-Substitution)

For i = 1 to (n-1):

For j = 0 to n:

6.2 Position-Independent Quantities

6.2.1 Calculation of G_p

6.2.1.1 If x_g > 0

6.2.1.1 If x_g £ 0

P_d = 1

G_p = G

6.2.2 For All G_p

6.3 Position-Dependent Surface Potential and Charge

6.3.1 Interpolated (Quasi-Static) Surface Potential along the Channel:

6.3.2 Normalized Bulk Charge and its First Two Derivatives of Surface Potential

6.3.3 Surface Potential as a Function of Normalized Inversion Charge

6.3.3.1 If x_g < -p_mrg

y_g = - x_g

6.3.3.2 If | x_g| £ p_mrg

6.3.3.3 If x_g > x_mrg

6.3.4 For all P

6.3.5 Auxiliary Functions

6.3.6 Normalized Right-Hand Side of Continuity Equation [f(x_g, q, q' q'')]

6.3.6.1 Calculation of z_sat for NMOS

6.3.6.2 Calculation of z_sat for PMOS

6.3.6.3 For All Z_sat

6.3.7 Normalization Constant

6.4 Cubic Spline Interpolation

For 1 £ i £ (n-1)

For 1 £ i £ (n-1)

6.5 Continuity Equation

Note: x_0,0 = x_s and x_n,0 = x_d

For 1 £ i £ (n-1)

6.6 Non-Quasi-Static Terminal Charges

6.6.1 Calculation of q_G^NQS when SWNQS is odd (1, 3, 5, or 9)

6.6.1 Calculation of q_G^NQS when SWNQS is 2

6.6.2 Conversion to Conventional Units

7 Auxiliary Equations

7.1 Smoothing Functions

7.2 Surface Potential Approximation Functions

                HFSS视频教程                                      ADS视频教程                               CST视频教程                           Ansoft Designer 中文教程

      Copyright © 2006 - 2013   微波EDA网, All Rights Reserved    业务联系：mweda@163.com