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MOSFET Levels 55 through 99 >
Philips MOS1101 Binned MOSFET Model, Level 63, Version 11011

Philips MOS1101 Binned MOSFET Model, Level 63, Version 11011

The Philips MOS Model 11, Version 11010 uses the binning geometry scaling rules. The syntax for a Philips MOS11011 Binned Scaling MOSFET model (HSPICEÔ Level 63, Version 11011) is:

.MODEL modelname NMOS LEVEL=63 VERSION=11011 [parameter=val] ...

.MODEL modelname PMOS LEVEL=63 VERSION=11011 [parameter=val] ...

modelname is the name used by SOSFET instances to refer to this .MODEL statement. The LEVEL=63 entry selects the Philips MOS11 MOSFET model. The VERSION parameter selects among the 1100, 11010 physical geometry scaling, and 11011 binned geometry scaling versions of the MOS11 model. VERSION=11011 selects the MOS11011 Binned model. See MOSFET Model, Philips MOS11010 Physical Model and MOSFET Model, Philips MOS1100 Model for information on those MOSFET models.

**Level 63 VERSION=11011 MOSFET Model Parameters**
Model Parameter	Description	Unit	Default
LEVEL	63 is required to select the Philips MOS11 MOSFET model	Integer	1 (default if LEVEL parameter is omitted)
VERSION	Philips version selector 11011 is required to select the Philips MOS Model 11, Level 1101 (binning geometry scaling rules)	Integer	1100
GATENOISE	Flag for inclusion or exclusion of induced gate thermal noise	None	0
KOV	Body effect factor for the source/drain overlap extensions	Volt^½	2.5
KPINV	Inverse of body effect factor of the polysilicon gate	Volt^½	0.0
LAP	Effective channel length reduction per side due to the lateral diffusion of the source/drain dopant ions	Meter	4.0e-8
LVAR	Difference between the actual length and the programmed polysilicon gate length	Meter	0.0
NT	Thermal noise coefficient at the reference temperature	Joule	1.656e-20
NU	Exponent of the field dependence of the mobility model at the reference temperature	None	2.0
PLA1	Coefficient for the length dependent part of a₁	None	0.0
PLA2	Coefficient for the length dependent part of a₂	Volt	0.0
PLA3	Coefficient for the length dependent part of a₃	None	0.0
PLAGIDL	Coefficient for the length dependent part of a_GIDL	Amp/Volt³	0.0
PLALP	Coefficient for the length dependent part of a	None	0.0
PLBACC	Coefficient for the length dependent part of B_ACC	Volt	0.0
PLBGIDL	Coefficient for the length dependent part of B_GIDL	Volt	0.0
PLBET	Coefficient for the length dependent part of b	Amp-Volt^-2	0.0
PLBINV	Coefficient for the length dependent part of B_INV	Volt	0.0
PLCGDO	Coefficient for the length dependent part of C_GDO	Farad	0.0
PLCGIDL	Coefficient for the length dependent part of C_GIDL	None	0.0
PLCGSO	Coefficient for the length dependent part of C_GSO	Farad	0.0
PLCOX	Coefficient for the length dependent part of C_OX	Farad	0.0
PLETAMOB	Coefficient for the length dependent part of h_MOB	None	0.0
PLIGACC	Coefficient for the length dependent part of I_GACC	Amp/Volt²	0.0
PLIGINV	Coefficient for the length dependent part of I_GINV	Amp/Volt²	0.0
PLIGOV	Coefficient for the length dependent part of I_GOV	Amp/Volt²	0.0
PLKO	Coefficient for the length dependent part of K_O	Volt^½	0.0
PLMEXP	Coefficient for the length dependent part of 1/m	None	0.0
PLMO	Coefficient for the length dependent part of M₀	None	0.0
PLNFA	Coefficient for the length dependent part of NF_A	1/Volt-Meter⁴	0.0
PLNFB	Coefficient for the length dependent part of NF_B	1/Volt-Meter²	0.0
PLNFC	Coefficient for the length dependent part of NF_C	1/Volt	0.0
PLPHIB	Coefficient for the length dependent part of y_B	Volt	0.0
PLSDIBL	Coefficient for the length dependent part of s_DIBL	Volt^-½	0.0
PLSSF	Coefficient for the length dependent part of s_SF	Volt^-½	0.0
PLTA1	Coefficient for the length dependent part of ST_A1	°K^-1	0.0
PLTBGIDL	Coefficient for the length dependent part of STB_GIDL	Volt/°K	0.0
PLTETABET	Coefficient for the length dependent part of h_BET	None	0.0
PLTETAMOB	Coefficient for the length dependent part of h_MOB	°K^-1	0.0
PLTETAPH	Coefficient for the length dependent part of h_PH	None	0.0
PLTETAR	Coefficient for the length dependent part of h_R	None	0.0
PLTETASAT	Coefficient for the length dependent part of h_SAT	None	0.0
PLTETASR	Coefficient for the length dependent part of h_SR	None	0.0
PLTHEPH	Coefficient for the length dependent part of Q_PH	Volt^-1	0.0
PLTHER	Coefficient for the length dependent part of Q_R	Volt^-1	0.0
PLTHESAT	Coefficient for the length dependent part of Q_SAT	Volt^-1	0.0
PLTHESR	Coefficient for the length dependent part of Q_SR	Volt^-1	0.0
PLTHETH	Coefficient for the length dependent part of Q_TH	Volt^-3	0.0
PLTNUEXP	Coefficient for the length dependent part of n_EXP	None	0.0
PLTPHIB	Coefficient for the length dependent part of ST_y_B	Volt/°K	0.0
PLTVFB	Coefficient for the length dependent part of ST_VFB	Volt/°K	0.0
PLWA1	Coefficient for the length times width dependent part of a₁	None	0.0
PLWA2	Coefficient for the length times width dependent part of a₂	Volt	0.0
PLWA3	Coefficient for the length times width dependent part of a₃	None	0.0
PLWAGIDL	Coefficient for the length times width dependent part of A_GIDL	Amp/Volt³	0.0
PLWBINV	Coefficient for the length times width dependent part of B_INV	Volt	0.0
PLWALP	Coefficient for the length times width dependent part of a	None	0.0
PLWBACC	Coefficient for the length times width dependent part of B_ACC	Volt	0.0
PLWBGIDL	Coefficient for the length times width dependent part of B_GIDL	Volt	0.0
PLWBET	Coefficient for the length times width dependent part of b	Amp-Volt^-2	0.0
PLWCGDO	Coefficient for the length times width dependent part of C_GDO	Farad	0.0
PLWCGIDL	Coefficient for the length times width dependent part of C_GIDL	None	0.0
PLWCGSO	Coefficient for the length times width dependent part of C_GSO	Farad	0.0
PLWCOX	Coefficient for the length times width dependent part of C_OX	Farad	0.0
PLWETAMOB	Coefficient for the length times width dependent part of h_MOB	None	0.0
PLWIGACC	Coefficient for the length times width dependent part of I_GACC	Amp/Volt²	0.0
PLWIGINV	Coefficient for the length times width dependent part of I_GINV	Amp/Volt²	0.0
PLWIGOV	Coefficient for the length times width dependent part of I_GOV	Amp/Volt²	0.0
PLWKO	Coefficient for the length times width dependent part of K_O	Volt^½	0.0
PLWMEXP	Coefficient for the length times width dependent part of 1/m	None	0.0
PLWMO	Coefficient for the length times width dependent part of M₀	None	0.0
PLWNFA	Coefficient for the length times width dependent part of NF_A	1/Volt-Meter⁴	0.0
PLWNFB	Coefficient for the length times width dependent part of NF_B	1/Volt-Meter²	0.0
PLWNFC	Coefficient for the length times width dependent part of NF_C	1/Volt	0.0
PLWPHIB	Coefficient for the length times width dependent part of y_B	Volt	0.0
PLWSDIBL	Coefficient for the length times width dependent part of s_DIBL	Volt^-½	0.0
PLWSSF	Coefficient for the length times width dependent part of s_SF	Volt^-½	0.0
PLWTA1	Coefficient for the length times width dependent part of ST_A1	°K^-1	0.0
PLWTBGIDL	Coefficient for the length times width dependent part of ST_BGIDL	Volt/°K	0.0
PLWTETABET	Coefficient for the length times width dependent part of h_BET	None	0.0
PLWTETAMOB	Coefficient for the length times width dependent part of h_MOB	°K^-1	0.0
PLWTETAPH	Coefficient for the length times width dependent part of h_PH	None	0.0
PLWTETAR	Coefficient for the length times width dependent part of h_R	None	0.0
PLWTETASAT	Coefficient for the length times width dependent part of h_SAT	None	0.0
PLWTETASR	Coefficient for the length times width dependent part of h_SR	None	0.0
PLWTHEPH	Coefficient for the length times width dependent part of Q_PH	Volt^-1	0.0
PLWTHER	Coefficient for the length times width dependent part of Q_R	Volt^-1	0.0
PLWTHESAT	Coefficient for the length times width dependent part of Q_SAT	Volt^-1	0.0
PLWTHESR	Coefficient for the length times width dependent part of Q_SR	Volt^-1	0.0
PLWTHETH	Coefficient for the length times width dependent part of Q_TH	Volt^-3	0.0
PLWTNUEXP	Coefficient for the length times width dependent part of n_EXP	None	0.0
PLWTPHIB	Coefficient for the length times width dependent part of ST_y_B	Volt/°K	0.0
PLWTVFB	Coefficient for the length times width dependent part of ST_VFB	Volt/°K	0.0
POA1	Coefficient for the geometry independent part of a₁	None	NMOS: 6.022 PMOS: 6.858
POA2	Coefficient for the geometry independent part of a₂	Volt	NMOS: 38.02e+1 PMOS: 57.32e+1
POA3	Coefficient for the geometry independent part of a₃	None	NMOS: 0.6407 PMOS: 0.4254
POAGIDL	Coefficient for the geometry independent part of A_GIDL	Amp/Volt³	0.0
POALP	Coefficient for the geometry independent part of a	None	0.025
POBACC	Coefficient for the geometry independent part of B_ACC	Volt	NMOS: 48 PMOS: 87.5
POBGIDL	Coefficient for the geometry independent part of B_GIDL	Volt	41.0
POBET	Coefficient for the geometry independent part of b	Amp-Volt^-2	NMOS: 1.922e-3 PMOS: 3.814e-4
POBINV	Coefficient for the geometry independent part of B_INV	Volt	48
POCGDO	Coefficient for the geometry independent part of C_GDO	Farad	NMOS: 6.392e-15 PMOS: 6.358e-15
POCGIDL	Coefficient for the geometry independent part of C_GIDL	None	0.0
POCGSO	Coefficient for the geometry independent part of C_GSO	Farad	NMOS: 6.392e-15 PMOS: 6.358e-15
POCOX	Coefficient for the geometry independent part of C_OX	Farad	NMOS: 2.98e-14 PMOS: 2.717e-14
POETAMOB	Coefficient for the geometry independent part of h_MOB	None	NMOS: 1.40 PMOS: 3.0
POIGACC	Coefficient for the geometry independent part of I_GACC	Amp/Volt²	0.0
POIGINV	Coefficient for the geometry independent part of I_GINV	Amp/Volt²	0.0
POIGOV	Coefficient for the geometry independent part of I_GOV	Amp/Volt²	0.0
POKO	Coefficient for the geometry independent part of K_O	Volt^½	0.5
POMEXP	Coefficient for the geometry independent part of 1/m	None	0.2
POMO	Coefficient for the geometry independent part of M₀	None	0.0
PONFA	Coefficient for the geometry independent part of NF_A	1/Volt-Meter⁴	NMOS: 8.323e22 PMOS: 1.90e22
PONFB	Coefficient for the geometry independent part of NF_B	1/Volt-Meter²	NMOS:2.514e+7 PMOS: 5.043e+6
PONFC	Coefficient for the geometry independent part of NF_C	1/Volt	NMOS: 0.0 PMOS: 3.627e-10
POPHIB	Coefficient for the geometry independent part of y_B	Volt	0.950
POSDIBL	Coefficient for the geometry independent part of s_DIBL	Volt^-½	NMOS: 8.53e-4 PMOS: 3.55e-5
POSSF	Coefficient for the geometry independent part of s_SF	Volt^-½	NMOS: 1.2e-2 PMOS: 1.0e-2
POTA1	Coefficient for the geometry independent part of ST_A1	°K^-1	0.0
POTBGIDL	Coefficient for the geometry-independent part of ST_BGIDL	Volt/°K	-3.638e-4
POTETABET	Coefficient for the geometry independent part of h_BET	None	NMOS: 1.30 PMOS: 0.5
POTETAMOB	Coefficient for the geometry independent part of h_MOB	°K^-1	0.0
POTETAPH	Coefficient for the geometry independent part of h_PH	None	NMOS: 1.35 PMOS: 3.75
POTETAR	Coefficient for the geometry independent part of h_R	None	NMOS: 0.95 PMOS: 0.4
POTETASAT	Coefficient for the geometry independent part of h_SAT	None	NMOS: 1.04 PMOS: 0.86
POTETASR	Coefficient for the geometry independent part of h_SR	None	NMOS: 0.65 PMOS: 0.5
POTHEPH	Coefficient for the geometry independent part of Q_PH	Volt^-1	NMOS: 1.290e-2 PMOS: 1.0e-3
POTHER	Coefficient for the geometry independent part of Q_R	Volt^-1	NMOS: 8.12e-2 PMOS: 7.9e-2
POTHESAT	Coefficient for the geometry independent part of QSAT	Volt^-1	NMOS: 2.513e-1 PMOS: 1.728e-1
POTHESR	Coefficient for the geometry independent part of QSR	Volt^-1	NMOS: 3.562e-1 PMOS: 7.30e-1
POTHETH	Coefficient for the geometry independent part of Q_TH	Volt^-3	NMOS: 1.0e-5 PMOS: 0.0
POTNUEXP	Coefficient for the geometry independent part of n_EXP	None	NMOS: 5.25 PMOS: 3.23
POTPHIB	Coefficient for the geometry independent part of ST_y_B	Volt/°K	-8.5e-4
POTVFB	Coefficient for the geometry independent part of ST_VFB	Volt/°K	5.0e-4
PWA1	Coefficient for the width dependent part of a₁	None	0.0
PWA2	Coefficient for the width dependent part of a₂	Volt	0.0
PWA3	Coefficient for the width dependent part of a₃	None	0.0
PWAGIDL	Coefficient for the width dependent part of A_GIDL	Amp/Volt³	0.0
PWALP	Coefficient for the width dependent part of a	None	0.0
PWBACC	Coefficient for the width dependent part of B_ACC	Volt	0.0
PWBET	Coefficient for the width dependent part of b	Amp-Volt^-2	0.0
PWBGIDL	Coefficient for the width dependent part of B_GIDL	Volt	0.0
PWBINV	Coefficient for the width dependent part of B_INV	Volt	0.0
PWCGDO	Coefficient for the width dependent part of C_GDO	Farad	0.0
PWCGIDL	Coefficient for the width dependent part of C_GIDL	None	0.0
PWCGSO	Coefficient for the width dependent part of C_GSO	Farad	0.0
PWCOX	Coefficient for the width dependent part of C_OX	Farad	0.0
PWETAMOB	Coefficient for the width dependent part of h_MOB	None	0.0
PWIGACC	Coefficient for the width dependent part of I_GACC	Amp/Volt²	0.0
PWIGINV	Coefficient for the width dependent part of I_GINV	Amp/Volt²	0.0
PWIGOV	Coefficient for the width dependent part of I_GOV	Amp/Volt²	0.0
PWKO	Coefficient for the width dependent part of K_O	Volt^½	0.0
PWMEXP	Coefficient for the width dependent part of 1/m	None	0.0
PWMO	Coefficient for the width dependent part of M₀	None	0.0
PWNFA	Coefficient for the width dependent part of NF_A	1/Volt-Meter⁴	0.0
PWNFB	Coefficient for the width dependent part of NF_B	1/Volt-Meter²	0.0
PWNFC	Coefficient for the width dependent part of NF_C	1/Volt	0.0
PWPHIB	Coefficient for the width dependent part of y_B	Volt	0.0
PWSDIBL	Coefficient for the width dependent part of s_DIBL	Volt^-½	0.0
PWSSF	Coefficient for the width dependent part of s_SF	Volt^-½	0.0
PWTA1	Coefficient for the width dependent part of ST_A1	°K^-1	0.0
PWTBGIDL	Coefficient for the width dependent part of ST_BGIDL	Volt/°K	0.0
PWTETABET	Coefficient for the width dependent part of h_BET	None	0.0
PWTETAMOB	Coefficient for the width dependent part of h_MOB	°K^-1	0.0
PWTETAPH	Coefficient for the width dependent part of h_PH	None	0.0
PWTETAR	Coefficient for the width dependent part of h_R	None	0.0
PWTETASAT	Coefficient for the width dependent part of h_SAT	None	0.0
PWTETASR	Coefficient for the width dependent part of h_SR	None	0.0
PWTHEPH	Coefficient for the width dependent part of Q_PH	Volt^-1	0.0
PWTHER	Coefficient for the width dependent part of Q_R	Volt^-1	0.0
PWTHESAT	Coefficient for the width dependent part of Q_SAT	Volt^-1	0.0
PWTHESR	Coefficient for the width dependent part of Q_SR	Volt^-1	0.0
PWTHETH	Coefficient for the width dependent part of Q_TH	Volt^-3	0.0
PWTNUEXP	Coefficient for the width dependent part of n_EXP	None	0.0
PWTPHIB	Coefficient for the width dependent part of ST_y_B	Volt/°K	0.0
PWTVFB	Coefficient for the width dependent part of ST_VFB	Volt/°K	0.0
THER1	Numerator of the gate voltage dependent part of series resistance for the reference transistor	Volt	0.0
THER2	Denominator of the gate voltage dependent part of series resistance for the reference transistor	Volt	1.0
TOX	Gate oxide layer thickness	Meter	3.2e-9
TR	Temperature at which the parameters for the reference transistor were determined	°C	21.0
VFB	Flatband voltage for the reference transistor at the reference temperature	Volt	-1.05
VFBOV	Flatband voltage for the source/drain overlap extensions	Volt	0.0
VP	Characteristic voltage for channel length modulation	Volt	5.0e-2
WOT	Effective reduction of the channel width per side due to the lateral diffusion of the channel stop dopant ions	Meter	0.0
WVAR	Difference between the actual width and the programmed field oxide opening	Meter	0.0

**Level 63 MOSFET JUNCAP Model Parameters**
Model Parameter	Description	Unit	Default
CJBR	Bottom junction capacitance at V=V_R	Farad/Meter²	1.00e-12
CJGR	Gate edge-junction capacitance at V=V_R	Farad/Meter	1.00e-12
CJSR	Sidewall junction capacitance at V=V_R	Farad/Meter	1.00e-12
JSDBR	Bottom saturation-current density due to diffusion from back contact	Amp/Meter²	1.00e-3
JSDGR	Gate-edge saturation-current density due to diffusion from back contact	Amp/Meter	1.00e-3
JSDSR	Sidewall saturation-current density due to diffusion from back contact	Amp/Meter	1.00e-3
JSGBR	Bottom saturation-current density due to electron-hole generation at V=V_R	Amp/Meter²	1.00e-3
JSGGR	Gate-edge saturation-current density due to electron-hole generation at V=V_R	Amp/Meter	1.00e-3
JSGSR	Sidewall saturation-current density due to electron-hole generation at V=V_R	Amp/Meter	1.00e-3
NB	Emission coefficient of the bottom forward current	None	1.0
NG	Emission coefficient of the gate-edge forward current	None	1.0
NS	Emission coefficient of the sidewall forward current	None	1.0
PB	Bottom junction grading coefficient	None	0.40
PG	Gate edge junction grading coefficient	None	0.40
PS	Sidewall junction grading coefficient	None	0.40
VDBR	Diffusion voltage of the bottom junction at T=T_R	Volt	1.00
VB	Reverse breakdown voltage	Volt	0.9
VDGR	Diffusion voltage of the gate edge junction at T=T_R	Volt	1.00
VDSR	Diffusion voltage of the sidewall junction at T=T_R	Volt	1.00
VR	Voltage at which parameters have been determined	Volt	0.0

Notes on MOS 11011 Binning Geometry Scaling

Binning is a way to extend a single device architecture by providing systematic variations on the device parameters. The philosophy is that when you vary the channel geometry, other parameters also change, in ways that can be completely characterized by the device manufacturer. The manufacturer or foundry provides a “design kit” that contains a set of .MODEL statements specifying the parameter settings for the different geometries. The design kit with the .MODEL statements can be included in the Nexxim design as a subcircuit.

1. A binning model is identified by giving the model name in the .MODEL statement the form modelname.n, where the entry n after the decimal point can be an integer or any unique identifier. The MOSFET instance definition refers to the modelname without any extension. The netlist can contain any number of different binning models with the same base modelname. For example, three binning models could be named NMOS11011.1 NMOS11011.2, and NMOS11011.3. The instance statement would reference simply NMOS11011.

Each of the available binning models corresponds to a range of channel lengths and widths specified with the LMIN, LMAX, WMIN, and WMAX model parameters. The ranges must not overlap.

Each binning model typically specifies values for the model parameters that are related to the channel geometry variations.

2. The MOSFET instance statement must contain values for instance parameters L and W. The L and W parameters can be specified with variables so that a sweep of binning models can be performed.

3. The simulator finds the binning model to which the following conditions BOTH apply:

• The LMIN and LMAX model parameter range includes the value of instance parameter L (scaled by the instance parameter SCALE).

• The WMIN and WMAX model parameter range includes the value of instance parameter W (scaled by the instance parameter SCALE).

If none of the available binning models matches the L and W instance parameters, simulation does not proceed.

4. Within a MOS 11011 model, model parameters are adjusted by the effective channel length and width. There are three types of binning geometry adjustments. The formulas for the adjustment use the following symbols:

POx = value of the geometry-independent model parameter, for example PONFA.

PLx = value of the length dependence parameter, for example PLNFA.

PWx = value of the width dependence parameter, for example PWNFA.

PWLx = value of the cross dependence parameter, for example PWLNFA.

Le = L + LVAR - 2.0 * LAP = effective channel length.

We= W + LVAR - 2.0 * WOT = effective channel width.

Len = 1.0e-6 = normalized effective channel length.

Wen = 1.0e-6 = normalized effective channel width.

Type I adjustment:

Value = POx+PLx*(Len/Le)+PWx*(Wen/We)+PWLx*(Len/Le)*(Wen/We)

Type II adjustment:

Value = POx+PLx*(Le/Len)+PWx*(We/Wen)+PWLx*(Le/Len)*(We/Wen)

Type III adjustment:

Value = POx+PLx*(Len/Le)+PWx*(Wen/We)+PWLx*(We/Le)

5. The parameters that receive Type I adjustments are A1R, A2R, A3R, ALPR, BACC, BGIDL, BINV, CGIDL, ETABETR, ETAMOBR, ETAPH, ETAR, ETASAT, ETASR, KOR, MOO, MOR, NFAR, NFBR, NFCR, PHIBR, SDIBLO, SSFR, STA1, STBGIDL, STETAMOB, STPHIB, STVFB, THEPHR, THERR, THESAT, THESRR, THETHR.

6. The parameters that receive Type II adjustments are COX, IGACCR, IGINVR, IGOVR.

7. The parameters that receive Type III adjustments are AGIDL, BETA, CGDO, CGSO.

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