Level 63, Version 11010
MOSFET Model Parameters
Model Parameter
|
Description
|
Unit
|
Default
|
LEVEL
|
Level=63 selects the Philips MOS11
MOSFET model
|
Integer
|
1 (default if LEVEL parameter is
omitted)
|
VERSION
|
Philips version selector
11010 is required to select the Philips MOS Model
11, Level 1101 (physical geometry scaling rules)
|
Integer
|
1100
|
A1R
|
Weak-avalanche current factor for
the reference transistor at the reference temperature
|
None
|
6.0
|
A2R
|
Weak-avalanche current exponent
for the reference transistor
|
Volt
|
38.0
|
A3R
|
Factor of drain-source voltage
above which weak-avalanche occurs, for the reference transistor
|
None
|
1.0
|
AGIDLR
|
Gain factor for gate-induced drain
leakage current for the actual transistor
|
Amp/Volt3
|
0.0
|
ALPEXP
|
Exponent of length dependence of
aR
|
None
|
1.0
|
ALPR
|
Channel length modulation factor
for the reference transistor
|
None
|
0.01
|
BACC
|
Probability factor for intrinsic
gate tunneling current in accumulation
|
Volt
|
48
|
BETSQ
|
Gain factor for an infinite square
transistor at the reference temperature
|
Amp/Volt2
|
NMOS: 3.709e-4
PMOS: 1.15e-4
|
BGIDL
|
Probability factor for gate-induced
drain leakage current at the reference temperature
|
Volt
|
41.0
|
BINV
|
Probability factor for intrinsic
gate tunnelingreference current in inversion
|
Volt
|
NMOS: 48
PMOS: 87.5
|
CGIDL
|
Factor for the lateral field dependence
of the gate-induced drain leakage current
|
None
|
0.0
|
COL
|
Gate overlap capacitance
|
Farad
|
3.2e-16
|
ETABETR
(ETABET)
|
Exponent of temperature dependence
of gain factor
|
None
|
NMOS: 1.3
PMOS: 0.5
|
ETAMOBR
|
Effective field parameter for dependence
on depletion/inversion charge for the reference transistor
|
None
|
NMOS: 1.4
PMOS: 3.0
|
ETAPH
|
Exponent of temperature dependence
of QSR for the
reference temperature
|
None
|
NMOS: 1.35
PMOS: 3.75
|
ETAR
|
Exponent of temperature dependence
of QR
|
None
|
NMOS: 0.95
PMOS: 0.4
|
ETASR
|
Exponent of temperature dependence
of QSR
|
None
|
NMOS: 0.65
PMOS: 0.5
|
ETASAT
|
Exponent of temperature dependence
of QSAT
|
None
|
NMOS: 1.04
PMOS: 0.86
|
FBET1
|
Relative mobility decrease due
to 1st lateral profile
|
None
|
0.0
|
FBET2
|
Relative mobility decrease due
to 2nd lateral profile
|
None
|
0.0
|
GATENOISE
|
Flag for inclusion or exclusion
of induced gate thermal noise
|
None
|
0.0
|
IGACCR
|
Gain factor for intrinsic gate
tunneling current in accumulation for the reference transistor
|
Amp/Volt2
|
0.0
|
IGINVR
|
Gain factor for intrinsic gate
tunneling current in inversion for the reference transistor
|
Amp/Volt2
|
0.0
|
IGOVR
|
Gain factor for source/drain overlap
current for the reference transistor
|
Amp/Volt2
|
0.0
|
KOR
|
Body effect factor for the reference
transistor
|
Volt½
|
0.5
|
KOV
|
Body effect factor for the source/drain
overlap extensions
|
Volt½
|
2.5
|
KPINV
|
Inverse of body effect factor of
the polysilicon gate
|
Volt½
|
0.0
|
LAP
|
Effective channel length reduction
per side due to the lateral diffusion of the source/drain dopant ions
|
Meter
|
4.0e-8
|
LMIN (LLMIN)
|
Minimum effective channel length
in technology, used for calculation of smoothing factor m.
|
Meter
|
1.5e-7
|
LP1
|
Characteristic length of the 1st
lateral profile
|
Meter
|
8.0e-7
|
LP2
|
Characteristic length of the 2nd
lateral profile
|
Meter
|
8.0e-7
|
LVAR
|
Difference between the actual length
and the programmed polysilicon gate length
|
Meter
|
0.0
|
MOEXP
|
Exponent of length dependence of
MO
|
None
|
1.34
|
MOO
|
Parameter for short-channel threshold
slope
|
None
|
0.0
|
MOR
|
Parameter for short-channel subthreshold
slope for the reference transistor
|
None
|
0.0
|
NFAR
|
1st flicker noise coefficient for
the reference transistor
|
1/Volt-Meter4
|
NMOS: 1.573e23
PMOS: 3.825e24
|
NFBR
|
2nd flicker noise coefficient for
the reference transistor
|
1/Volt-Meter2
|
NMOS: 4.752e9
PMOS: 1.015e9
|
NFCR
|
3rd flicker noise coefficient for
the reference transistor
|
1/Volt
|
NMOS: 0.0
PMOS: 7.3e-8
|
NT
|
Thermal noise coefficient at the
actual temperature
|
Joule
|
1.656e-20
|
NUEXP
|
Exponent of the temperature dependence
of the parameter n
|
None
|
NMOS: 5.25
PMOS: 3.23
|
NU
|
Exponent of the field dependence
of the mobility model minus 1 (i.e., ν -1)
at the reference temperature
|
None
|
2.0
|
PHIBR
|
Surface potential at the onset
of strong inversion at the reference temperature
|
Volt
|
0.95
|
SDIBLEXP
|
Exponent of the length dependence
of sDIBL
|
None
|
1.35
|
SDIBLO
|
Drain-induced barrier lowering
parameter for the reference transistor
|
Volt½
|
1.0e-4
|
SL2KO
|
2nd coefficient of the length dependence
of K0
|
None
|
0.0
|
SL2PHIB
|
2nd coefficient of the length dependence
of yB
|
None
|
0.0
|
SLA1
|
Coefficient of length dependence
of a1
|
None
|
0.0
|
SLA2
|
Coefficient of length dependence
of a2
|
None
|
0.0
|
SLA3
|
Coefficient of length dependence
of a3
|
None
|
0.0
|
SLALP
|
Coefficient of length dependence
of aR
|
None
|
1.0
|
SLETABET
|
Coefficient of length dependence
of hBR
|
None
|
0.0
|
SLKO
|
Coefficient of length dependence
of KO
|
None
|
0.0
|
SLPHIB
|
Coefficient of the length dependence
of yB
|
None
|
0.0
|
SLSSF
|
Coefficient of length dependence
of sSF
|
Meter
|
1.0
|
SLTHESAT
|
Coefficient of length dependence
of QSAT
|
None
|
1.0
|
SSFR
|
Static feedback parameter for the
reference transistor
|
Volt½
|
6.25e-3
|
STA1
|
Temperature dependence coefficient
of a1
|
°K-1
|
0.0
|
STBGIDL
|
Coefficient of the temperature
dependence of BGIDL
|
Volt/°K
|
-3.638e-4
|
STETAMOB
|
Temperature dependence coefficient
of hMOB
|
°K-1
|
0.0
|
STPHIB
|
Coefficient of temperature dependence
of yB
|
Volt/°K
|
-8.5e-4
|
STVFB
|
Coefficient of temperature dependence
of VFB
|
Volt/°K
|
5.0e-4
|
SWA1
|
Coefficient of width dependence
of a1
|
None
|
0.0
|
SWA2
|
Coefficient of width dependence
of a2
|
None
|
0.0
|
SWA3
|
Coefficient of width dependence
of a3
|
None
|
0.0
|
SWALP
|
Coefficient of width dependence
of aR
|
None
|
0.0
|
SWETAMOB
|
Width dependence coefficient of
hMOB
|
None
|
0.0
|
SWKO
|
Coefficient of width dependence
of KO
|
None
|
0.0
|
SWPHIB
|
Width dependence coefficient of
yB
|
None
|
0.0
|
SWSSF
|
Width dependence coefficient of
sSF
|
None
|
0.0
|
SWTHEPH
|
Width dependence coefficient of
QSR
|
None
|
0.0
|
SWTHER
|
Width dependence coefficient of
QR
|
None
|
0.0
|
SWTHESAT
|
Width dependence coefficient of
QSAT
|
None
|
0.0
|
SWTHESR
|
Width dependence coefficient of
QSR
|
None
|
0.0
|
SWTHETH
|
Width dependence coefficient of
QTH
|
None
|
0.0
|
THEPHR
|
Coefficient of the mobility reduction
due to phonon scattering for the reference transistor at the reference
temperature
|
Volt-1
|
NMOS: 1.29e-2
PMOS: 1e-3
|
THER1
|
Numerator of the gate voltage dependent
part of series resistance for the reference transistor
|
Volt
|
0.0
|
THER2
|
Denominator of the gate voltage
dependent part of series resistance for the reference transistor
|
Volt
|
1.0
|
THERR
|
Coefficient of the series resistance
for the reference transistor at the reference temperature
|
Volt-1
|
NMOS: 0.155
PMOS: 0.08
|
THESATEXP
|
Exponent of the length dependence
of QSAT
|
None
|
1.0
|
THESATR
|
Velocity saturation parameter due
to optical/acoustic phonon scattering for the reference transistor at
the reference temperature
|
Volt-1
|
NMOS: 0.5
PMOS: 0.2
|
THESRR
|
Coefficient of the mobility reduction
due to surface roughness scattering for the reference transistor at
the reference temperature
|
Volt-1
|
NMOS: 0.4
PMOS: 0.73
|
THETHEXP
|
Exponent of the length dependence
of QTH
|
None
|
1.0
|
THETHR
|
Coefficient of self-heating for
the reference transistor at the reference temperature
|
Volt-3
|
NMOS: 1.0e-3
PMOS: 0.5e-3
|
TOX
|
Gate oxide layer thickness
|
Meter
|
3.2e-9
|
TR
|
Temperature at which the parameters
for the reference transistor were determined
|
°C
|
21.0
|
VFBOV
|
Flatband voltage for the source/drain
overlap extensions
|
Volt
|
0.0
|
VFB (VFBR)
|
Flatband voltage for the reference
transistor at the reference temperature
|
Volt
|
-1.05
|
VP
|
Characteristic voltage for channel
length modulation
|
Volt
|
0.05
|
WOT
|
Effective reduction of the channel
width per side due to the lateral diffusion of the channel stop dopant
ions
|
Meter
|
0.0
|
WVAR
|
Difference between the actual width
and the programmed field oxide opening
|
Meter
|
0.0
|
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