Microsemi公司推出面向UHF雷达应用的SiC材料的2200W功率放大器（en）

Microsemi Corp of Irvine, CA, USA, which designs and manufactures analog mixed-signal integrated circuits, high-reliability semiconductors and RF subsystems, has launched 2200W peak RF power silicon carbide (SiC) transistor, extending its portfolio of SiC devices for high-power UHF-band pulsed radar applications.
With the new model 0405SC-2200M device, Microsemi says that it supports next-generation UHF pulsed radar designs with a full series of SiC transistor options from 100W, 500W, 1000W, 1500W and now 2200W for both weather and long-range over-the-horizon radar applications.
“This 2200W device results from our long-term commitment to the military and aerospace markets, aggressively investing in SiC technology,” says Microsemi RFIS vice president Charles Leader. “In addition to supporting next-generation UHF designs, we’re developing high-pulsed-power SiC transistors for both L-band and S-band radar systems. initial L-band devices are scheduled for demonstration this fall,” he adds.
The 0405SC-2200M is a Generation 3 chip in its geometry, materials, processing and packaging. It is designed in a single-ended package for common-gate 2200W Class AB performance at UHF frequencies of 406–450MHz. A hermetically sealed package built with 100% high-temperature gold metallization and wires provides highest reliability and improved system yields, claims Microsemi. Its SiC design provides high power in what is claimed to be the industry's smallest transistor and circuit size for the specified frequency range.
Typical power gain is greater than 8dB, drain efficiency is 55% at 450MHz, and typical compression is 1.0dB. Additional system benefits include simplified impedance matching, a high 125V operating voltage (drastically reducing power supply size and dc current demand), low conducting current (minimizing system noise), and what is claimed to be the industry's highest peak power for reduced system power combining (4-way combination yields 8kW with margin).

2200W，军品啊！