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MOSFET Levels 1 through 27 >
   MOSFET Instance, Advanced SPICE Level 2 Model (Level 8)       

MOSFET Instance, Advanced SPICE Level 2 Model (Level 8)

 

Advanced SPICE Level 2 (HSPICE Level 8) Instance Netlist Syntax

The syntax for a Advanced SPICE Level 2 (HSPICE Level 8) MOSFET instance is:

Mxxxx nd ng ns [nb] modelname [[L=]length] [[W=]width]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val] [VDSAT=val] [DTEMP=val]

[M=val] [TEMP=val] [ASPEC=val] [SCALE=val]

nd is the drain node, ng is the gate node, ns is the source node, and nb is the bulk or substrate node of the MOSFET. modelname is the name of a Level 8 MOSFET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val] [VDSAT=val] [DTEMP=val]

[M=val] [TEMP=val] [ASPEC=val] [SCALE=val]

 

 


Level 8 MOSFET Instance Parameters

Instance Parameter

Description

Unit

Default

AD

Drain diffusion area

Meter2

0.0

AS

Source diffusion area

Meter2

0.0

ASPEC

ASPEC option

None

0.0

DTEMP

Difference between MOSFET and circuit temperatures

°C

0.0

L

MOSFET channel length

Meter

1.0e-4

M

Multiplier: simulates parallel transistors

None

0.0

NRD

Number of squares of drain diffusion for resistance calculations

None

0.0

NRS

Number of squares of source diffusion for resistance calculations

None

1.0

PD

Drain diffusion periphery

Meter

0.0

PS

Source diffusion periphery

Meter

0.0

SCALE

Scale factor for instance parameters

None

1.0

TEMP

Device temperature

°C

Calculated

VDSAT

Saturation voltage

Volt

0.0

W

MOSFET channel width

Meter

1.0e-4


Level 8 MOSFET Instance Netlist Examples

M1 10 11 12 mosfet1

M12 G3 VDD 0 0 mosfet2 M=2 DTEMP=30

Mtest 34 56 78 90 fetex




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