淘宝官方店     推荐课程     在线工具     联系方式     关于我们  
 
 

微波射频仿真设计   Ansoft Designer 中文培训教程   |   HFSS视频培训教程套装

 

Agilent ADS 视频培训教程   |   CST微波工作室视频教程   |   AWR Microwave Office

          首页 >> Ansoft Designer >> Ansoft Designer在线帮助文档


Ansoft Designer / Ansys Designer 在线帮助文档:


Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 55 through 99 >
   PSP 102.1 MOSFET Binning Model, Level 69, BINMOD=1       

PSP 102.1 MOSFET Binning Model, Level 69, BINMOD=1

The syntax for a Level 69 PSP102.1 binning model MOSFET model is:

.MODEL modelname NMOS LEVEL=69 [(][parameter=val] ... [)]

or

.MODEL modelname PMOS LEVEL=69 [(][parameter=val] ... [)]

modelname is the name used by MOSFET instances to refer to this .MODEL statement. The LEVEL=69 entry (plus the parameter BINMOD=1 on the instance) selects the PSP 102.1 MOSFET binning model.

 


Level 69 PSP 102.1 MOSFET Binning Model Selector Parameters

Model Parameter

Description

Unit

Default

LEVEL

69 is required to select the PSP 102.1 MOSFET model. The instance parameter BINMOD=1 selects the binning model.

None

1 (default if LEVEL parameter is omitted)

SWIGATE

Flag for gate current (0 = off)

None

0

SWIMPACT

Flag for impact ionization current (0 = off)

None

0

SWGIDL

Flag for GIDL/GISL current (0 = off)

None

0

SWJUNCAP

Flag for JUNCAP model (0 = off)

None

0


 


Level 69 PSP 102.1 MOSFET Binning Model Parameters

Model Parameter

Description

Unit

Default

LVARO

Geometry-independent difference between actual and programmed polysilicon gate length

Meter

0.0

LVARL

Length dependence of difference between actual and programmed polysilicon gate length

None

0.0

LVARW

Width dependence of difference between actual and programmed polysilicon gate length

None

0.0

LAP

Effective channel length reduction per side due to lateral diffusion of channel-stop dopant ions

Meter

0.0

WVARO

Geometry-independent difference between actual and programmed field-oxide opening

Meter

0.0

WVARL

Length dependence of difference between actual and programmed field-oxide opening

None

0.0

WVARW

Width dependence of difference between actual and programmed field-oxide opening

None

0.0

WOT

Effective channel width reduction per side due to lateral diffusion of channel-stop dopant ions

Meter

0.0

TR (TREF, TNOM)

Reference temperature

°C

21.0

POVFB

Geometry-independent flat-band voltage at reference temperature

Volt

-1.0

PLVFB

Length dependence of flat-band voltage

None

0.0

PWVFB

Width dependence of flat-band voltage

None

0.0

PLWVFB

Area dependence of flat-band voltage

None

0.0

POSTVFB

Geometry-independent temperature dependence of flat-band voltage

Volt/°K

5.0e-4

PLSTVFB

Length dependence of temperature dependence of flat-band voltage

None

0.0

PWSTVFB

Width dependence of temperature dependence of flat-band voltage

None

0.0

PLWSTVFB

Area dependence of temperature dependence of flat-band voltage

None

0.0

POTOX

Gate oxide thickness

Meter

2.0e-9

PONEFF

Geometry-independent substrate doping

1/Meter3

5.0e23

PLNEFF

Length dependence of substrate doping due to segregation

None

0.0

PWNEFF

Width dependence of substrate doping due to segregation

None

0.0

PLWNEFF

Area dependence of substrate doping due to segregation

None

0.0

POVNSUB

Effective doping bias-dependence parameter

Volt

0.0

PONSLP

Effective doping bias-dependence parameter

Volt

0.05

PODNSUB

Effective doping bias-dependence parameter

1/Volt

0.0

PONP

Geometry-independent gate polysilicon doping

1/Meter3

1.0e26

PLNP

Length dependence of gate polysilicon doping

None

0.0

PWNP

Width dependence of gate polysilicon doping

None

0.0

PLWNP

Area dependence of gate polysilicon doping

None

0.0

QMC

Quantum-mechanical correction factor

None

1

POCT

Geometry-independent part of interface states factor CT

None

0.0

PLCT

Length dependence of interface states factor CT

None

0.0

PWCT

Width dependence of CT

None

0.0

PLWCT

Area dependence of CT

None

0.0

POTOXOV

Overlap oxide thickness

Meter

2.0e-9

PONOV

Effective doping of overlap region

1/Meter3

5.0e25

PLNOV

Length dependence of overlap region

Meter

0.0

PWNOV

Width dependence of overlap region

Meter

0.0

PLWNOV

Area dependence of overlap region

Meter

0.0


 


Level 69 PSP 102.1 Binned Model MOSFET DIBL Parameters

Model Parameter

Description

Unit

Default

POCF

Geometry-independent drain-bias dependence of lateral gradient factor CF

 

0.0

PLCF

Length dependence of drain-bias dependence of lateral gradient factor CF

 

0.0

PWCF

Width dependence of drain-bias dependence of lateral gradient factor CF

None

0.0

PLWCF

Area dependence of drain-bias dependence of lateral gradient factor CF

None

0.0

POCFB

Back-bias dependence of drain-bias dependence of lateral gradient factor CF

1/Volt

0.0


 


Level 69 PSP 102.1 Binned Model MOSFET Mobility Parameters

Model Parameter

Description

Unit

Default

POBETN

Geometry-independent BETN

 

0.07

PLBETN

Length dependence of BETN

 

0.0

PWBETN

Width dependence of BETN

 

0.0

PLWBETN

Area dependence of BETN

 

0.0

POSTBET

Geometry-independent temperature dependence of BETN

 

1.0

PLSTBET

Length dependence of temperature dependence of BETN

 

0.0

PWSTBET

Width dependence of temperature dependence of BETN

 

0.0

PLWSTBET

Area dependence of temperature dependence of BETN

 

0.0

POMUE

Geometry-independent mobility reduction coefficient MUE at reference temperature

Meter/Volt

0.5

PLMUE

Length dependence of mobility reduction coefficient MUE at reference temperature

None

0.0

PWMUE

Width dependence of mobility reduction coefficient MUE at reference temperature

None

0.0

PLWMUE

Area dependence of mobility reduction coefficient MUE at reference temperature

None

0.0

POSTMUE

Temperature dependence of MUE

None

0.0

POTHEMU

Mobility reduction exponent at reference temperature

None

1.5

POSTTHEMU

Temperature dependence of mobility reduction exponent THEMU

None

1.5

POCS

Geometry-independent Coulomb scattering parameter CS at reference temperature

None

0.0

PLCS

Length dependence of Coulomb scattering parameter CS

None

0.0

PWCS

Width dependence of Coulomb scattering parameter CS

None

0.0

PLWCS

Area dependence of Coulomb scattering parameter CS

None

0.0

POSTCS

Temperature dependence of CS

None

0.0

POXCOR

Geometry-independent non-universality parameter

1/Volt

0.0

PLXCOR

Length dependence of XCOR

None

0.0

PWXCOR

Width dependence of XCOR

None

0.0

PLWXCOR

Area dependence of XCOR

None

0.0

POSTXCOR

Temperature dependence of XCOR

None

0.0


 


Level 69 Binned Model MOSFET Series Resistance Parameters

Model Parameter

Description

Unit

Default

PORS

Source/drain series resistance for a channel width of 1mm at reference temperature

Ohm

30.0

PLRS

Length dependence of RS

 

0.0

PWRS

Width dependence of RS

 

0.0

PLWRS

Area dependence of RS

 

0.0

POSTRS

Temperature dependence of source/drain series resistance

None

1.0

PORSB

Back-bias dependence of series resistance

1/Volt

0.0

PORSG

Gate-bias dependence of series resistance

1/Volt

0.0


 


Level 69 Binned Model MOSFET Velocity Saturation Parameters

Model Parameter

Description

Unit

Default

POTHESAT

Geometry-independent velocity saturation parameter at reference temperature

1/Volt

0.0

PLTHESAT

Length dependence of velocity saturation parameter at reference temperature

1/Volt

0.0

PWTHESAT

Width dependence of velocity saturation parameter at reference temperature

None

0.0

PLWTHESAT

Area dependence of velocity saturation parameter at reference temperature

None

0.0

POSTTHESAT

Geometry-independent temperature dependence of THESAT

None

1.0

PLSTTHESAT

Length dependence of STTHESAT

None

0.0

PWSTTHESAT

Width dependence of STTHESAT

None

0.0

PLWSTTHESAT

Area dependence of STTHESAT

None

0.0

POTHESATB

Back-bias dependence ot THESAT

1/Volt

0.0

PLTHESATB

Length dependence of Back-bias dependence ot THESAT

None

0.0

PWTHESATB

Width dependence of back-bias dependence ot THESAT

None

0.0

PLWTHESATB

Area dependence of back-bias dependence ot THESAT

None

0.0

POTHESATG

Gate-bias dependence of THESAT

1/Volt

0.0

PLTHESATG

Length dependence of gate-bias dependence of THESAT

None

0.0

PWTHESATG

Width dependence of gate-bias dependence of THESAT

None

0.0

PLWTHESATG

Area dependence of gate-bias dependence of THESAT

None

0.0


 


Level 69 Binned Model MOSFET Saturation Voltage Parameters

Model Parameter

Description

Unit

Default

POAX

Geometry-independent linear/saturation transition parameter

None

3.0

PLAX

Length dependence of AX

None

0.0

PWAX

Width dependence of AX

None

0.0

PLWAX

Area dependence of AX

None

0.0


 


Level 69 Binned Model MOSFET CLM Parameters

Model Parameter

Description

Unit

Default

POALP

Geometry-independent CLM prefactor ALP

 

0.01

PLALP

Length dependence of CLM prefactor ALP

None

0.0

PWALP

Width dependence of ALP

None

0.0

PLWALP

Area dependence of ALP

None

0.0

POALP1

Geometry-independent CLM prefactor above threshold ALP1

 

0.0

PLALP1

Length dependence of CLM prefactor above threshold ALP1

Volt

0.0

PWALP1

Width dependence of ALP1

None

0.0

PLWALP1

Area dependence of ALP1

None

0.0

POALP2

Geometry-independent CLM prefactor below threshold ALP2

None

0.0

PLALP2

Length dependence of ALP2

Volt

0.0

PWALP2

Width dependence of ALP2

None

0.0

PLWALP2

Area dependence of ALP2

None

0.0

POVP

CLM logarithmic dependence factor

Volt

0.05


 


Level 69 Binned Model MOSFET Impact Ionization Parameters

Model Parameter

Description

Unit

Default

POA1

Geometry-independent part of impact-ionization prefactor A1

None

1.0

PLA1

Length dependence of A1

None

0.0

PWA1

Width dependence of A1

None

0.0

PLWA1

Area dependence of A1

None

0.0

POA2

Impact-ionization exponent at reference temperature

Volt

10.0

POSTA2

Temperature dependence of A2

Volt

0.0

POA3

Geometry-independent saturation voltage dependence of impact ionization

None

1.0

PLA3

Length dependence of A3

None

0.0

PWA3

Width dependence of A3

None

0.0

PLWA3

Area dependence of A3

None

0.0

POA4

Geometry-independent back-bias dependence of impact ionization

Volt0.5

0.0

PLA4

Length dependence of A4

None

0.0

PWA4

Width dependence of A4

None

0.0

PLWA4

Area dependence of A4

None

0.0


 


Level 69 Binned Model MOSFET Gate Currrent Parameters

Model Parameter

Description

Unit

Default

POGCO

Gate tunneling energy adjustment

None

0.0

POIGINV

Gate channel prefactor for a gate channel area of 1mm2

 

0.0

PLIGINV

Length dependence of Iginv

 

0.0

PWIGINV

Width dependence of Iginv

 

0.0

PLWIGINV

Area dependence of Iginv

Ampere

0.0

POIGOV

Gate overlap prefactor for a channel width of 1mm

 

0.0

PLIGOV

Length dependence of Igov

 

0.0

PWIGOV

Width dependence of Igov

 

0.0

PLWIGOV

Area dependence of Igov

Ampere

0.0

POSTIG

Temperature dependence of gate current

None

2.0

POGC2

Gate current slope factor

None

0.375

POGC3

Gate current curvature factor

None

0.063

POCHIB

Tunneling barrier height

Volt

3.1


 


Level 69 Binned Model MOSFET GIDL Parameters

Model Parameter

Description

Unit

Default

POAGIDL

Geometry-independent GIDL prefactor

 

0.0

PLAGIDL

Length dependence of GIDL prefactor

 

0.0

PWAGIDL

Width dependence of GIDL prefactor

Ampere/Volt3

0.0

PLWAGIDL

Area dependence of GIDL prefactor

 

0.0

POBGIDL

GIDL probability factor at reference temperature

Volt

41.0

POSTBGIDL

Temperature dependence of BGIDL

Volt/°K

0.0

POCGIDL

Back-bias dependence of GIDL

None

0.0


 


Level 69 Binned Model MOSFET Charge Model Parameters

Model Parameter

Description

Unit

Default

POCGBOV

Oxide capacitance for gate-bulk overlap for an area of 1mm2

Farad

0.0

PLCGBOV

Length dependence of CGBOV

 

0.0

PWCGBOV

Width dependence of CGBOV

 

0.0

PLWCGBOV

Area dependence of CGBOV

 

0.0

POCFR

Outer fringe capacitance for a channel width of 1mm

Farad

0.0

PLCFR

Length dependence of CFR

 

0.0

PWCFR

Width dependence of CFR

 

0.0

PLWCFR

Area dependence of CFR

 

0.0


 


Level 69 Binned Model MOSFET Noise Model Parameters

Model Parameter

Description

Unit

Default

POFNT (FNTO)

Thermal noise coefficient

None

1.0

PONFA

First coefficient of flicker noise for a channel area of 1mm2

1/Volt-Meter4

8.0e22

PLNFA

Length dependence of NFA

 

0.0

PWNFA

Width dependence of NFA

 

0.0

PLWNFA

Area dependence of NFA

 

0.0

PONFB

Second coefficient of flicker noise for a channel area of 1mm2

1/Volt-Meter2

3.0e7

PLNFB

Length dependence of NFB

 

0.0

PWNFB

Width dependence of NFB

 

0.0

PLWNFB

Area dependence of NFB

 

0.0

PONFC

Third coefficient of flicker noise for a channel area of 1mm2

1/Volt

0.0

PLNFC

Length dependence of NFC

 

0.0

PWNFC

Width dependence of NFC

 

0.0

PLWNFC

Area dependence of NFC

 

0.0


 


Level 69 Binned Model MOSFET Temperature Offset Parameters

Model Parameter

Description

Unit

Default

DTA

Temperature offset from ambient circuit temperature

°K

0.0


 


Level 69 Binned Model MOSFET Stress Model Parameters

Model Parameter

Description

Unit

Default

SAREF

Reference distance between OD edge to poly from one side

Meter

1e-6

SBREF

Reference distance between OD edge to poly from the other side

Meter

1e-6

WLOD

Width parameter

Meter

0.0

KUO

Mobility degradation/enhancement coefficient

Meter

0.0

KVSAT

Saturation velocity degradation/enhancement parameter

Meter

0.0

TKUO

Temperature coefficient of KUO

None

0.0

LKUO

Length dependency of KUO

MeterLLODKUO

0.0

WKUO

Width dependency of KUO

MeterWLODKUO

0.0

PKUO

Area dependency of KUO

MeterLLODKUO+WLODKUO

0.0

LLODKUO

Length parameter for mobility stress effect

None

0.0

WLODKUO

Width parameter for mobility stress effect

None

0.0

KVTHO

Threshold shift parameter

Volt-Meter

0.0

LKVTHO

Length dependency of KVTHO

MeterLLODVTH

0.0

WKVTHO

Width dependency of KVTHO

MeterWLODVTH

0.0

PKVTHO

Area dependency of KVTHO

MeterLLODVTH+WLODVTH

0.0

LLODVTH

Length parameter for threshold voltage stress effect

None

0.0

WLODVTH

Width parameter for threshold voltage stress effect

None

0.0

STETAO

ETAO shift factor related to threshold voltage change

Meter

0.0

LODETAO

ETAO shift modification factor

None

1.0


 


Level 69 Binned Model MOSFET Basic Junction Model Parameters

Model Parameter

Description

Unit

Default

TRJ

Reference temperature

°C

21.0

IMAX

Maximum current up to which forward current behaves exponentially

Ampere

1000.0


 

 


Level 69 Binned Model MOSFET JUNCAP2 Capacitance Parameters

Model Parameter

Description

Unit

Default

CJORBOT

Zero-bias capacitance per unit area of bottom component

Farad/Meter2

1.0e-3

CJORSTI

Zero-bias capacitance per unit length of STI-edge component

Farad/Meter

1.0e-9

CJORGAT

Zero-bias capacitance per unit length of gate-edge component

Farad/Meter

1.0e-9

VBIRBOT

Built-in voltage at the reference temperature of bottom component

Volt

1.0

VBIRSTI

Built-in voltage at the reference temperature of STI-edge component

Volt

1.0

VBIRGAT

Built-in voltage at the reference temperature of gate-edge component

Volt

1.0

PBOT

Grading coefficient of bottom component

None

0.5

PSTI

Grading coefficient of STI-edge component

None

0.5

PGAT

Grading coefficient of gate-edge component

None

0.5


 

 


Level 69 Binned Model MOSFET JUNCAP2 Ideal Current Parameters

Model Parameter

Description

Unit

Default

PHIGBOT

Zero-temperature bandgap voltage of bottom component

Volt

1.16

PHIGSTI

Zero-temperature bandgap voltage of STI-edge component

Volt

1.16

PHIGGAT

Zero-temperature bandgap voltage of gate-edge component

Volt

1.16

IDSATRBOT

Saturation current density at the reference temperature of bottom component

Ampere/Meter2

1.0e-12

IDSATRSTI

Saturation current density at the reference temperature of STI-edge component

Ampere/Meter

1.0e-18

IDSATRGAT

Saturation current density at the reference temperature of gate-edge component

Ampere/Meter

1.0e-18

CSRHBOT

Shockley-Read-Hall prefactor of bottom component

Ampere/Meter3

1.0e2

CSRHSTI

Shockley-Read-Hall prefactor of STI-edge component

Ampere/Meter2

1.0e-4

CSRHGAT

Shockley-Read-Hall prefactor of gate-edge component

Ampere/Meter2

1.0e-4

XJUNSTI

Junction depth of STI-edge component

Meter

1.0e-7

XJUNGAT

Junction depth of gate-edge component

Meter

1.0e-7

CTATBOT

Trap-assisted tunneling prefactor of bottom component

Ampere/Meter3

1.0e2

CTATSTI

Trap-assisted tunneling prefactor of STI-edge component

Ampere/Meter2

1.0e-4

CTATGAT

Trap-assisted tunneling prefactor of gate-edge component

Ampere/Meter2

1.0e-4

MEFFTATBOT

Effective mass (in units of m0) for trap-assisted tunneling of bottom component

None

0.25

MEFFTATSTI

Effective mass (in units of m0) for trap-assisted tunneling of STI-edge component

None

0.25

MEFFTATGAT

Effective mass (in units of m0) for trap-assisted tunneling of gate-edge component

None

0.25


 


Level 69 Binned Model MOSFET JUNCAP2 Band-to-Band Tunneling Parameters

Model Parameter

Description

Unit

Default

CBBTBOT

Band-to-band tunneling prefactor of bottom component

Ampere/Volt3

1.0e-12

CBBTSTI

Band-to-band tunneling prefactor of STI-edge component

Ampere-Meter/Volt3

1.0e-18

CBBTGAT

Band-to-band tunneling prefactor of gate-edge component

Ampere-Meter/Volt3

1.0e-18

FBBTRBOT

Normalization field at the reference temperature for band-to-band tunneling prefactor of bottom component

Volt/Meter

1.0e9

FBBTRSTI

Normalization field at the reference temperature for band-to-band tunneling prefactor of STI-edge component

Volt/Meter

1.0e9

FBBTRGAT

Normalization field at the reference temperature for band-to-band tunneling prefactor of gate-edge component

Volt/Meter

1.0e9

STFBBTBOT

Temperature scaling parameter for band-to-band tunneling prefactor of bottom component

1/°K

-1.0e-3

STFBBTSTI

Temperature scaling parameter for band-to-band tunneling prefactor of STI-edge component

1/°K

-1.0e-3

STFBBTGAT

Temperature scaling parameter for band-to-band tunneling prefactor of gate-edge component

1/°K

-1.0e-3


 


Level 69 Binned Model MOSFET JUNCAP2 Avalanche and Breakdown Parameters

Model Parameter

Description

Unit

Default

VBRBOT

Breakdown voltage of bottom component

Volt

10.0

VBRSTI

Breakdown voltage of STI-edge component

Volt

10.0

VBRGAT

Breakdown voltage of gate-edge component

Volt

10.0

PBRBOT

Breakdown onset tuning parameter of bottom component

Volt

4.0

PBRSTI

Breakdown onset tuning parameter of STI-edge component

Volt

4.0

PBRGAT

Breakdown onset tuning parameter of gate-edge component

Volt

4.0


 

 


Level 69 Geometric Model MOSFET NQS Model Parameters

Model Parameter

Description

Unit

Default

SWNQS

Switch for NQS effects

0 = off

1,2,3,5, or 9 = number of collocation points

None

0

MUNQSO

Relative mobility for NQS modeling

None

1.0

RGO

Gate resistance Rgate

Ohm

1.0e-3

RBULKO

Bulk resistance Rbulk

Ohm

1.0e-3

RWELLO

Well resistance Rwell

Ohm

1.0e-3

RJUNSO

Source-side bulk resistance Rjuns

Ohm

1.0e-3

RJUNDO

Drain-side bulk resistance Rjund

Ohm

1.0e-3


 

 


Level 69 Geometric Model MOSFET PSP 101 Compatibility Parameters

Model Parameter

Description

Unit

Default

DLQ

Effective channel length reduction for CV

Meter

0.0

DWQ

Effective channel width reduction for CV

Meter

0.0

PODPHIB

Geometry-independent offset of PHIB

Volt

0.0

PLDPHIB

Length dependence of DPHIB

Volt

0.0

PWDPHIB

Width dependence of DPHIB

None

0.0

PLWDPHIB

Area dependence of DPHIB

None

0.0

POFETA

Effective field parameter

None

1.0

POCOX

Geometry independent oxide capacitance

Farad

1e-14

PLCOX

Length dependence of COX

None

0.0

PWCOX

Width dependence of COX

None

0.0

PLWCOX

Area dependence of COX

None

0.0

POCGOV

Geometry independent gate overlay capacitance

Farad

1e-15

PLCGOV

Length dependence of CGOV

None

0.0

PWCGOV

Width dependence of CGOV

None

0.0

PLWCGOV

Area dependence of CGOV

None

0.0


PSP 102.1 MOSFET Binning Model Equations

Refer to the Local Model PSP102.1 for equations.




HFSS视频教学培训教程 ADS2011视频培训教程 CST微波工作室教程 Ansoft Designer 教程

                HFSS视频教程                                      ADS视频教程                               CST视频教程                           Ansoft Designer 中文教程


 

      Copyright © 2006 - 2013   微波EDA网, All Rights Reserved    业务联系:mweda@163.com