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MOSFET Levels 55 through 99 >
PSP 102.1 MOSFET Global Model, Level 69

PSP 102.1 MOSFET Global Model, Level 69

The syntax for a Level 69 PSP102.1 global model MOSFET model is:

.MODEL modelname NMOS LEVEL=69 [(][parameter=val] ... [)]

.MODEL modelname PMOS LEVEL=69 [(][parameter=val] ... [)]

modelname is the name used by MOSFET instances to refer to this .MODEL statement. The LEVEL=69 entry (plus the parameters GEOMOD=1 and BINMOD=0 on the instance) selects the PSP 102.1 MOSFET global model.

**Level 69 PSP 102.1 MOSFET Global Model Selector Parameters**
Model Parameter	Description	Unit	Default
LEVEL	69 is required to select the PSP 102.1 MOSFET model. The instance parameters GEOMOD=1 and BINMOD=0 select the global model over the local and binned models.	None	1 (default if LEVEL parameter is omitted)
SWIGATE	Flag for gate current (0 = off)	None	0
SWIMPACT	Flag for impact ionization current (0 = off)	None	0
SWGIDL	Flag for GIDL/GISL current (0 = off)	None	0
SWJUNCAP	Flag for JUNCAP model (0 = off)	None	0

**Level 69 PSP 102.1 MOSFET Global Model Parameters**
Model Parameter	Description	Unit	Default
LVARO	Geometry-independent difference between actual and programmed polysilicon gate length	Meter	0.0
LVARL	Length dependence of difference between actual and programmed polysilicon gate length	None	0.0
LVARW	Width dependence of difference between actual and programmed polysilicon gate length	None	0.0
LAP	Effective channel length reduction per side due to lateral diffusion of channel-stop dopant ions	Meter	0.0
WVARO	Geometry-independent difference between actual and programmed field-oxide opening	Meter	0.0
WVARL	Length dependence of difference between actual and programmed field-oxide opening	None	0.0
WVARW	Width dependence of difference between actual and programmed field-oxide opening	None	0.0
WOT	Effective channel width reduction per side due to lateral diffusion of channel-stop dopant ions	Meter	0.0
TR (TREF, TNOM)	Reference temperature	°C	21.0
VFBO	Geometry-independent flat-band voltage at reference temperature	Volt	-1.0
VFBL	Length dependence of flat-band voltage	None	0.0
VFBW	Width dependence of flat-band voltage	None	0.0
VFBLW	Area dependence of flat-band voltage	None	0.0
STVFBO	Geometry-independent temperature dependence of flat-band voltage	Volt/°K	5.0e-4
STVFBL	Length dependence of temperature dependence of flat-band voltage	None	0.0
STVFBW	Width dependence of temperature dependence of flat-band voltage	None	0.0
STVFBLW	Area dependence of temperature dependence of flat-band voltage	None	0.0
TOXO	Gate oxide thickness	Meter	2.0e-9
NSUB0	Geometry-independent substrate doping	1/Meter³	3.0e23
NSUBW	Width dependence of substrate doping due to segregation	None	0.0
WSEG	Characteristic width of segregation of substrate doping	Meter	1.0e-8
NPCK	Pocket doping level	1/Meter³	1.0e24
NPCKW	Coefficient describing width dependence of pocket doping due to segregation	None	0.0
WSEGP	Characteristic length of segregation of substrate doping	Meter	1.0e-8
LPCK	Characteristic length of pocket doping profile	1/Meter³	1.0e-8
LPCKW	Coefficient describing width dependence of charactersitic length of pocket doping profile	None	0.0
VNSUBO	Effective doping bias-dependence parameter	Volt	0.0
NSLPO	Effective doping bias-dependence parameter	Volt	0.05
DNSUBO	Effective doping bias-dependence parameter	1/Volt	0.0
NPO	Geometry-independent gate polysilicon doping	1/Meter³	1.0e26
NPL	Length dependence of gate polysilicon doping	None	0.0
QMC	Quantum-mechanical correction factor	None	1.0
CTO	Geometry-independent part of interface states factor CT	None	0.0
CTL	Length dependence of interface states factor CT	None	0.0
CTLEXP	Exponent describing length dependence of CT	None	1.0
CTW	Width dependence of CT	None	0.0
TOXOVO	Overlap oxide thickness	Meter	2.0e-9
LOV	Overlap length for gate/drain and gate-source overlap capacitance‘	Meter	0.0
NOVO	Effective doping of overlap region	1/Meter³	5.0e25

**Level 69 PSP 102.1 Global Model MOSFET DIBL Parameters**
Model Parameter	Description	Unit	Default
FOL1	First coefficient for length dependence of lateral gradient factor FO	None	0.0
FOL2	Second coefficient for length dependence of lateral gradient factor FO	None	0.0
CFL	Length dependence of drain-bias dependence of lateral gradient factor CF	None	0.0
CFLEXP	Exponent describing length dependence of drain-bias dependence of lateral gradient factor CF	None	0.0
CFW	Width dependence of drain-bias dependence of lateral gradient factor CF	None	0.0
CFBO	Back-bias dependence of lateral gradient factor CF	1/Volt	0.0

**Level 69 PSP 102.1 Global Model MOSFET Mobility Parameters**
Model Parameter	Description	Unit	Default
UO	Zero-field mobility at reference temperature	None	5.0e-2
FBET1	Relative mobility decrease due to first lateral profile		0.0
FBET1W	Width dependence of FBET1		0.0
LP1	Mobility related characteristic length of first lateral profile	Meter	1.0e-8
LP1W	Width dependence of LP1		0.0
FBET2	Relative mobility decrease due to second lateral profile		0.0
LP2	Mobility related characteristic length of second lateral profile	Meter	1.0e-8
BETW1	First higher-order width scaling coefficient of BETN		0.0
BETW2	Second higher-order width scaling coefficient of BETN		0.0
WBET	Characteristic width for width scaling of BETN	Meter	1.0e-9
STBETO	Geometry-independent temperature dependence of BETN		1.0
STBETL	Length dependence of temperature dependence of BETN		0.0
STBETW	Width dependence of temperature dependence of BETN		0.0
STBETLW	Area dependence of temperature dependence of BETN		0.0
MUEO	Geometry-independent mobility reduction coefficient MUE at reference temperature	Meter/Volt	0.5
MUEW	Width dependence of mobility reduction coefficient MUE at reference temperature	None	0.0
STMUEO	Temperature dependence of MUE	None	0.0
THEMUO	Mobility reduction exponent at reference temperature	None	1.5
STTHEMUO	Temperature dependence of mobility reduction exponent THEMU	None	1.5
CSO	Geometry-independent Coulomb scattering parameter CS at reference temperature	None	0.0
CSW	Width dependence of Coulomb scattering parameter CS	None	0.0
STCSO	Temperature dependence of CS	None	0.0
XCORO	Geometry-independent non-universality parameter	1/Volt	0.0
XCORL	Length dependence of XCOR	None	0.0
XCORW	Width dependence of XCOR	None	0.0
XCORLW	Area dependence of XCOR	None	0.0
STXCORO	Temperature dependence of XCOR	None	0.0

**Level 69 Global Model MOSFET Series Resistance Parameters**
Model Parameter	Description	Unit	Default
RSW1	Source/drain series resistance for a channel width of 1mm at reference temperature	Ohm	2500.0
RSW2	Higher-order width scaling of source/drain series resistance		0.0
STRSO	Temperature dependence of source/drain series resistance	None	1.0
RSBO	Back-bias dependence of series resistance	1/Volt	0.0
RSGO	Gate-bias dependence of series resistance	1/Volt	0.0

**Level 69 Global Model MOSFET Velocity Saturation Parameters**
Model Parameter	Description	Unit	Default
THESATO	Geometry-independent velocity saturation parameter at reference temperature	1/Volt	0.0
THESATL	Length dependence of velocity saturation parameter at reference temperature	1/Volt	0.5
THESATLEXP	Exponent of length dependence of THESAT	None	1.0
THESATW	Width dependence of velocity saturation parameter at reference temperature	None	0.0
STTHESATO	Geometry-independent temperature dependence of THESAT	None	1.0
STTHESATL	Length dependence of STTHESAT	None	0.0
STTHESATW	Width dependence of STTHESAT	None	0.0
STTHESATLW	Area dependence of STTHESAT	None	0.0
THESATBO	Back-bias dependence ot THESAT	1/Volt	0.0
THESATGO	Gate-bias dependence of THESAT	1/Volt	0.0

**Level 69 Global Model MOSFET Saturation Voltage Parameters**
Model Parameter	Description	Unit	Default
AXO	Geometry-independent linear/saturation transition parameter	None	18.0
AXL	Length dependence of AX	None	0.4

**Level 69 Global Model MOSFET CLM Parameters**
Model Parameter	Description	Unit	Default
ALPL	Length dependence of CLM prefactor ALP	None	5.0e-4
ALPLEXP	Exponent of length dependence of CLM prefactor ALP	None	1.0
ALPW	Width dependence of ALP	None	0.0
ALP1L1	Length dependence of CLM enhancement factor above threshold ALP1	Volt	0.0
ALP1LEXP	Exponent of length dependence of CLM enhancement factor above threshold	None	0.5
ALP1L2	Second-order length dependence of CLM enhancement factor above threshold ALP1		0.0
ALP1W	Width dependence of ALP1	None	0.0
ALP2L1	Geometry-independent CLM enhancement factor below threshold ALP2	Volt	0.0
ALP2L2	Length dependence of CLM enhancement factor above threshold ALP2		0.0
ALP2W	Width dependence of ALP2	None	0.0
VPO	CLM logarithmic dependence factor	Volt	0.05

**Level 69 Global Model MOSFET Impact Ionization Parameters**
Model Parameter	Description	Unit	Default
A1O	Geometry-independent part of impact-ionization prefactor A1	None	1.0
A1L	Length dependence of A1	None	0.0
A1W	Width dependence of A1	None	0.0
A2O	Impact-ionization exponent at reference temperature	Volt	10.0
STA2O	Temperature dependence of A2	Volt	0.0
A3O	Geometry-independent saturation voltage dependence of impact ionization	None	1.0
A3L	Length dependence of A3	None	0.0
A3W	Width dependence of A3	None	0.0
A4O	Geometry-independent back-bias dependence of impact ionization	Volt^0.5	0.0
A4W	Width dependence of A4	None	0.0

**Level 69 Global Model MOSFET Gate Currrent Parameters**
Model Parameter	Description	Unit	Default
GCOO	Gate tunneling energy adjustment	None	0.0
IGINVLW	Gate channel current prefactor for a gate channel area of 1mm²		0.0
IGOVW	Gate overlap current prefactor for a channel width of 1mm		0.0
STIGO	Temperature dependence of gate current	None	2.0
GC2O	Gate current slope factor	None	0.375
GC3O	Gate current curvature factor	None	0.063
CHIBO	Tunneling barrier height	Volt	3.1

**Level 69 Global Model MOSFET GIDL Parameters**
Model Parameter	Description	Unit	Default
AGIDLW	Width dependence of GIDL prefactor	Ampere/Volt³	0.0
BGIDLO	GIDL probability factor at reference temperature	Volt	41.0
STBGIDLO	Temperature dependence of BGIDL	Volt/°K	0.0
CGIDLO	Back-bias dependence of GIDL	None	0.0

**Level 69 Global Model MOSFET Charge Model Parameters**
Model Parameter	Description	Unit	Default
CGBOVL	Oxide capacitance for gate-bulk overlap for an area of 1mm²	Farad	0.0
CFRW	Outer fringe capacitance for a channel width of 1mm	Farad	0.0

**Level 69 Global Model MOSFET Noise Model Parameters**
Model Parameter	Description	Unit	Default
FNTO	Thermal noise coefficient	None	1.0
NFALW	First coefficient of flicker noise for a channel area of 1mm²	1/Volt-Meter⁴	8.0e22
NFBLW	Second coefficient of flicker noise for a channel area of 1mm²	1/Volt-Meter²	3.0e7
NFCLW	Third coefficient of flicker noise for a channel area of 1mm²	1/Volt	0.0

**Level 69 Global Model MOSFET Temperature Offset Parameters**
Model Parameter	Description	Unit	Default
DTA	Temperature offset from ambient circuit temperature	°K	0.0

**Level 69 Global Model MOSFET Stress Model Parameters**
Model Parameter	Description	Unit	Default
SAREF	Reference distance between OD edge to poly from one side	Meter	1e-6
SBREF	Reference distance between OD edge to poly from the other side	Meter	1e-6
WLOD	Width parameter	Meter	0.0
KUO	Mobility degradation/enhancement coefficient	Meter	0.0
KVSAT	Saturation velocity degradation/enhancement parameter	Meter	0.0
TKUO	Temperature coefficient of KUO	None	0.0
LKUO	Length dependency of KUO	Meter^LLODKUO	0.0
WKUO	Width dependency of KUO	Meter^WLODKUO	0.0
PKUO	Area dependency of KUO	Meter^{LLODKUO+WLODKUO}	0.0
LLODKUO	Length parameter for mobility stress effect	None	0.0
WLODKUO	Width parameter for mobility stress effect	None	0.0
KVTHO	Threshold shift parameter	Volt-Meter	0.0
LKVTHO	Length dependency of KVTHO	Meter^LLODVTH	0.0
WKVTHO	Width dependency of KVTHO	Meter^WLODVTH	0.0
PKVTHO	Area dependency of KVTHO	Meter^{LLODVTH+WLODVTH}	0.0
LLODVTH	Length parameter for threshold voltage stress effect	None	0.0
WLODVTH	Width parameter for threshold voltage stress effect	None	0.0
STETAO	ETAO shift factor related to threshold voltage change	Meter	0.0
LODETAO	ETAO shift modification factor	None	1.0

**Level 69 Global Model MOSFET Basic Junction Model Parameters**
Model Parameter	Description	Unit	Default
TRJ	Reference temperature	°C	21.0
IMAX	Maximum current up to which forward current behaves exponentially	Ampere	1000.0

**Level 69 Global Model MOSFET JUNCAP2 Capacitance Parameters**
Model Parameter	Description	Unit	Default
CJORBOT	Zero-bias capacitance per unit area of bottom component	Farad/Meter²	1.0e-3
CJORSTI	Zero-bias capacitance per unit length of STI-edge component	Farad/Meter	1.0e-9
CJORGAT	Zero-bias capacitance per unit length of gate-edge component	Farad/Meter	1.0e-9
VBIRBOT	Built-in voltage at the reference temperature of bottom component	Volt	1.0
VBIRSTI	Built-in voltage at the reference temperature of STI-edge component	Volt	1.0
VBIRGAT	Built-in voltage at the reference temperature of gate-edge component	Volt	1.0
PBOT	Grading coefficient of bottom component	None	0.5
PSTI	Grading coefficient of STI-edge component	None	0.5
PGAT	Grading coefficient of gate-edge component	None	0.5

**Level 69 Global Model MOSFET JUNCAP2 Ideal Current Parameters**
Model Parameter	Description	Unit	Default
PHIGBOT	Zero-temperature bandgap voltage of bottom component	Volt	1.16
PHIGSTI	Zero-temperature bandgap voltage of STI-edge component	Volt	1.16
PHIGGAT	Zero-temperature bandgap voltage of gate-edge component	Volt	1.16
IDSATRBOT	Saturation current density at the reference temperature of bottom component	Ampere/Meter²	1.0e-12
IDSATRSTI	Saturation current density at the reference temperature of STI-edge component	Ampere/Meter	1.0e-18
IDSATRGAT	Saturation current density at the reference temperature of gate-edge component	Ampere/Meter	1.0e-18
CSRHBOT	Shockley-Read-Hall prefactor of bottom component	Ampere/Meter³	1.0e2
CSRHSTI	Shockley-Read-Hall prefactor of STI-edge component	Ampere/Meter²	1.0e-4
CSRHGAT	Shockley-Read-Hall prefactor of gate-edge component	Ampere/Meter²	1.0e-4
XJUNSTI	Junction depth of STI-edge component	Meter	1.0e-7
XJUNGAT	Junction depth of gate-edge component	Meter	1.0e-7
CTATBOT	Trap-assisted tunneling prefactor of bottom component	Ampere/Meter³	1.0e2
CTATSTI	Trap-assisted tunneling prefactor of STI-edge component	Ampere/Meter²	1.0e-4
CTATGAT	Trap-assisted tunneling prefactor of gate-edge component	Ampere/Meter²	1.0e-4
MEFFTATBOT	Effective mass (in units of m₀) for trap-assisted tunneling of bottom component	None	0.25
MEFFTATSTI	Effective mass (in units of m₀) for trap-assisted tunneling of STI-edge component	None	0.25
MEFFTATGAT	Effective mass (in units of m₀) for trap-assisted tunneling of gate-edge component	None	0.25

**Level 69 Global Model MOSFET JUNCAP2 Band-to-Band Tunneling Parameters**
Model Parameter	Description	Unit	Default
CBBTBOT	Band-to-band tunneling prefactor of bottom component	Ampere/Volt³	1.0e-12
CBBTSTI	Band-to-band tunneling prefactor of STI-edge component	Ampere-Meter/Volt³	1.0e-18
CBBTGAT	Band-to-band tunneling prefactor of gate-edge component	Ampere-Meter/Volt³	1.0e-18
FBBTRBOT	Normalization field at the reference temperature for band-to-band tunneling prefactor of bottom component	Volt/Meter	1.0e9
FBBTRSTI	Normalization field at the reference temperature for band-to-band tunneling prefactor of STI-edge component	Volt/Meter	1.0e9
FBBTRGAT	Normalization field at the reference temperature for band-to-band tunneling prefactor of gate-edge component	Volt/Meter	1.0e9
STFBBTBOT	Temperature scaling parameter for band-to-band tunneling prefactor of bottom component	1/°K	-1.0e-3
STFBBTSTI	Temperature scaling parameter for band-to-band tunneling prefactor of STI-edge component	1/°K	-1.0e-3
STFBBTGAT	Temperature scaling parameter for band-to-band tunneling prefactor of gate-edge component	1/°K	-1.0e-3

**Level 69 Global Model MOSFET JUNCAP2 Avalanche and Breakdown Parameters**
Model Parameter	Description	Unit	Default
VBRBOT	Breakdown voltage of bottom component	Volt	10.0
VBRSTI	Breakdown voltage of STI-edge component	Volt	10.0
VBRGAT	Breakdown voltage of gate-edge component	Volt	10.0
PBRBOT	Breakdown onset tuning parameter of bottom component	Volt	4.0
PBRSTI	Breakdown onset tuning parameter of STI-edge component	Volt	4.0
PBRGAT	Breakdown onset tuning parameter of gate-edge component	Volt	4.0

**Level 69 Global Model MOSFET NQS Model Parameters**
Model Parameter	Description	Unit	Default
SWNQS	Switch for NQS effects 0 = off 1,2,3,5, or 9 = number of collocation points	None	0
MUNQSO	Relative mobility for NQS modeling	None	1.0
RGO	Gate resistance R_gate	Ohm	1.0e-3
RBULKO	Bulk resistance R_bulk	Ohm	1.0e-3
RWELLO	Well resistance R_well	Ohm	1.0e-3
RJUNSO	Source-side bulk resistance R_juns	Ohm	1.0e-3
RJUNDO	Drain-side bulk resistance R_jund	Ohm	1.0e-3

**Level 69 Global Model MOSFET PSP 101 Compatibility Parameters**
Model Parameter	Description	Unit	Default
DLQ	Effective channel length reduction for CV	Meter	0.0
DWQ	Effective channel width reduction for CV	Meter	0.0
DPHIBO	Geometry-independent offset of PHIB	Volt	0.0
DPHIBL	Length dependence of DPHIB	Volt	0.0
DPHIBLEXP	Exponent for length dependence of offset of PHIB		1.0
DPHIBW	Width dependence of DPHIB	None	0.0
DPHIBLW	Area dependence of DPHIB	None	0.0
CTLW	Area dependence of interface states factor CS		0.0
CSL	Length dependence of CS		0.0
CSLEXP	Exponent for length dependence of CS		0.0
CSLW	Area dependence of CS		0.0
FETAO	Effective field parameter	None	1.0
THESATLW	Area dependence of velocity saturation parameter THESAT		0.0
ALP2LEXP	Exponent for length dependence of ALP2		0.5
A4L	Length dependence of A4		0.0

PSP 102.1 MOSFET Global Model Equations

Refer to the Local Model PSP102.1 for equations.

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