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Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 55 through 99 >
   HiSIM2.0 MOSFET Model, Level 66       

HiSIM2.0 MOSFET Model, Level 66

The syntax for a LEVEL 66 MOSFET model is:

.MODEL modelname NMOS LEVEL=66 [(][parameter=val] ... [)]

or

.MODEL modelname PMOS LEVEL=66 [(][parameter=val] ... [)]

modelname is the name used by MOSFET instances to refer to this .MODEL statement. The LEVEL=66 entry selects the Hiroshima University STARC IGFET Version 2.0 (HiSIM2.0) MOSFET model.

 


Level 66 MOSFET Model Selector Parameters

Model Parameter

Description

Unit

Default

LEVEL

66 is required to select the HiSIM2.0 MOSFET model

None

1 (default if LEVEL parameter is omitted)

VERSION

Version number

None

231

INFO

Info

None

0

COADOV

Switch to add overlap capacitances to intrinsic ones

None

1 (yes)

CODFM

Switch to enable design for manufacturing

None

0 (off)

COGIDL

Switch to calculate gate induced drain leakage (GIDL) current

None

0 (no)

COFLICK

Switch to calculate flicker noise

None

0 (no)

COIGN

Switch to calcualte induced gate noise

None

0 (no)

COIIGS

Switch to calculate gate tunneling current

None

0 (no)

COIPRV

Use ids_prv as initial guess of Ids

None

1.0

COISTI

Switch to calculate STI

None

0 (no)

COISUB

Switch to calculate substrate current

None

0 (no)

CONQS

Calculate in NQS or QS mode

None

0

COOVLP

Selector for overlap capacitance model

<1 = constant value

0 = approximate the linear reduction of the field

>0 = consider the lateral impurity profile

None

0

COPPRV

Use psX_prv as initial guess of prX (X=0|1)

None

1.0

CORBNET

Activate body resistance (1) or do not activate (0)

None

0

CORG

Activate sheet resistance (1) or do not activate (0)

None

0

CORSRD

RS/RD contact resistor inclusion flag

None

0 (no)

COTHRM1

Switch to calculate thermal noise

None

0 (no)

NOISE

Channel thermal and flicker noise combination selector

1 = SPICE2 thermal, SPICE2 flicker

2 = HiSIM1 (BSIM3) thermal, HiSIM flicker

3 = SPICE2 thermal, HiSIM1 flicker

4 = HiSIM1 noise, SPICE2 flicker

5 = No thermal, HiSIM1 flicker

None

1


 

 


Level 66 MOSFET Basic Device Parameters

Model Parameter

Description

Unit

Default

TOX

Physical oxide thickness

Meter

3.0e-9

XLD

Gate-overlap length

Meter

0.0

XWD

Gate-overlap width

Meter

0.0

TPOLY

Height of the gate poly-Si for fringing capacitance

Meter

200e-9

LL

Coefficient of gate length modification

None

0.0

LLD

Coefficient of gate length modification

None

0.0

LLN

Coefficient of gate length modification

None

0.0

WL

Coefficient of gate width modification

None

0.0

WLD

Coefficient of gate width modification

None

0.0

WLN

Coefficient of gate width modification

None

0.0

NSUBC

Substrate impurity concentration

cm-3

5.0e17

MPHDFM (DMPHNSUBC)

NSUBCDFM dependence of phonon scattering for DFM

 

-0.3

NSUBP

Maximum pocket concentration

cm-3

1.0e18

LP

Pocket penetration langth

Meter

15.0e-9

NPEXT

Maximum concentration of pocket tail

cm-3

5.0e17

LPEXT

Extension length of pocket tail

Meter

1.0e-50

VBFC

Flat-band voltage

Volt

-1.0

VBI

Built-in potential

Volt

Version 231: 1.0

Else: 1.1

KAPPA

Dielectric constant for gate dielectric

None

3.9

EG0

Bandgap

eV

1.1785

BGTMP1

Temperature dependence of bandgap

eV/°K

90.25e-6

BGTMP2

Temperature dependence of bandgap

eV/°K2

0.1e-6

TNOM

Circuit nominal temperature

°C

27

XL

Difference between real and drawn gate length

Meter

0.0

XW

Difference between real and drawn gate width

Meter

0.0


 

 


Level 66 MOSFET Velocity Parameters

Model Parameter

Description

Unit

Default

VMAX

Saturation velocity

cm/Second

10e6

VOVER

Velocity overshoot effect

cmVOVERP

0.3

VOVERP

Leff dependence of velocity overshoot

None

0.3

VTMP

Temperature dependence of the saturation velocity

cm/Second

0.0


 


Level 66 MOSFET Quantum Effect Model Parameters

Model Parameter

Description

Unit

Default

QME1

Vgs dependence of quantum mechanical effect

Meter/Volt2

0.0

QME2

Vgs dependence of quantum mechanical effect

Volt

1.0

QME3

Minimum Tox modification

Meter

0.0


 


Level 66 Poly Depletion MOSFET Model Parameters

Model Parameter

Description

Unit

Default

PGD1

Strength of poly depletion effect

Volt

Version 231: 1.0e-4

Other: 0.0

PGD2

Threshold voltage of poly depletion effect

Volt

1.0

PGD3

Vds dependence of poly depletion effect

None

0.8

PGD4

Lgate dependence of poly depletion effect

None

0.0


 


Level 66 Short Channel MOSFET Model Parameters

Model Parameter

Description

Unit

Default

PARL2

Depletion width of channel/contact junction

Meter

10e-9

SC1

Magnitude of short-channel effect

None

1.0

SC2

Vds dependence of short-channel effect

Meter/Volt

1.0

SC3

Vbs dependence of short-channel effect

Meter/Volt

0.0

SCP1

Magnitude of short-channel effect due to pocket

None

1.0

SCP2

Vds dependence of short-channel effect due to pocket

Meter/Volt

0.1

SCP3

Vbs dependence of short-channel effect due to pocket

Meter/Volt

0.0

SCP21

Short-channel-effect modification for small Vds

Volt

0.0

SCP22

Short-channel-effect modification for small Vds

Volt4

0.0

BS1

Body-coefficient modification by impurity profile

Volt2

0.0

BS2

Body-coefficient modification by impurity profile

Volt

0.9


 


Level 66 MOSFET Mobility Model Parameters

Model Parameter

Description

Unit

Default

BB

High-field mobility degradation

None

NMOS: 2.0

PMOS: 1.0

DMPHNSUBC

 

 

0.0

MUECB0

Coulomb scattering

cm2/Volt-sec

1000.0

MUECB1

Coulomb scattering

cm2/Volt-sec

100.0

MUEPH0

Phonon scattering

None

0.3

MUEPH1

Phonon scattering

[cm2/(Volt-sec)] ´
(Volt/cm)MUEPH0]

NMOS: 25.0e3

PMOS: 9.0e3

MUEPHL

Length dependence of phonon mobility reduction

None

0.0

MUEPLP

Length dependence of phonon mobility reduction

None

1.0

MUESR0

Surface-roughness scattering

None

2.0

MUESR1

Surface-roughness scattering

[cm2/(Volt-sec)] ´
[(Volt/cm)MUESR0]

1.0e15

MUESRL

Length dependence of surface roughness mobility reduction

None

0.0

MUESLP

Length dependence of surface roughness mobility reduction

None

1.0

MUETMP

Temperature dependence of phonon scattering

None

1.5

NDEP

Depletion charge contribution on effective electric field

None

1.0

NDEPL

Modification of depletion charge contribution for short-channel case

None

0.0

NDEPLP

Modification of depletion charge contribution for short-channel case

None

1.0

NINV

Inversion charge contribution on effective electric field

None

0.5


 


Level 66 MOSFET Narrow Channel Effect Parameters

Model Parameter

Description

Unit

Default

WFC

Threshold voltage change due to capacitance change

Farad/(cm2-Meter)

0.0

WVTH0

Threshold voltage shift

None

0.0

NSUBP0

Modification of pocket concentration for narrow width

cm-3

0.0

NSUBWP

Modification of pocket concentration for narrow width

None

1.0

MUEPHW

Phonon-related mobility reduction

None

0.0

MUEPWP

Phonon-related mobility reduction

None

1.0

MUESRW

Change of surface-roughness-related mobility

None

0.0

MUESWP

Change of surface-roughness-related mobility

None

1.0

VTHSTI

Threshold voltage shift due to STI

None

0.0

VDSTI

Vds dependence of STI subthreshold

None

0.0

SCSTI1

The same effect as SC1 but at STI edge

None

0.0

SCSTI2

The same effect as SC2 but at STI edge

None

0.0

SCSTI3

The same effect as SC3 but at STI edge

None

0.0

NSTI

Substrate-impurity concentration at the STI edge

cm-3

Version 231: 1.0e17

Other: 5.0e17

WSTI

Width of the high-field region at the STI edge

Meter

0.0

WSTIL

Channel length dependence of WSTI

None

0.0

WSTILP

Channel length dependence of WSTI

None

1.0

WSTIW

Channel-width dependence of WSTI

None

0.0

WSTIWP

Channel-width dependence of WSTI

None

1.0

WL1

Threshold voltage shift of STI leakage due to narrow channel effect

None

0.0

WL1P

Threshold voltage shift of STI leakage due to narrow channel effect

None

1.0

NSUBPSTI1

Pocket concentration change due to diffusion-region length between gate and STI

Meter

0.0

NSUBPSTI2

Pocket concentration change due to diffusion-region length between gate and STI

Meter

0.0

NSUBPSTI3

Pocket concentration change due to diffusion-region length between gate and STI

Meter

1.0

MUESTI1

Mobility change due to diffusion-region length between gate and STI

None

0.0

MUESTI2

Mobility change due to diffusion-region length between gate and STI

None

0.0

MUESTI3

Mobility change due to diffusion-region length between gate and STI

None

1.0

SAREF

Length of diffusion between gate and STI

Meter

1e-6

SBREF

Length of diffusion between gate and STI

Meter

1e-6


 


Level 66 MOSFET Small Size Effect Parameters

Model Parameter

Description

Unit

Default

WL2

Threshold voltage shift due to small size effect

None

0.0

WL2P

Threshold voltage shift due to small size effect

None

1.0

MUEPHS

Mobility modification due to small size effect

None

0.0

MUEPSP

Mobility modification due to small size effect

None

1.0

VOVERS

Modification of maximum velocity due to small size effect

None

0.0

VOVERSP

Modification of maximum velocity due to small size effect

None

0.0


 


Level 66 MOSFET Channel Length Modulation Parameters

Model Parameter

Description

Unit

Default

CLM1

Hardness coefficient of channel/contact junction

None

0.7

CLM2

Coefficient for QB contribution

None

2.0

CLM3

Coefficient for QI contribution

None

1.0

CLM4

Smoothing effect for Gds

None

500e-6

CLM5

Effect of pocket implantation

None

1.0

CLM6

Effect of pocket implantation

None

0.0


 


Level 66 MOSFET Substrate Current Parameters

Model Parameter

Description

Unit

Default

SUB1

Substrate current coefficient of magnitude

Volt-1

10.0

SUB1L

Lgate dependence of SUB1

Meter

2.5e-3

SUB1LP

Lgate dependence of SUB1

None

1.0

SUB2

Substrate current coefficient of exponential term

Volt

25.0

SUB2L

Lgate dependence of SUB2

Meter

2.0e-6

SVDS

Substrate current dependence on Vds

None

0.8

SLG

Substrate current dependence on Lgate

Meter

3.0e-8

SLGL

Substrate current dependence on Lgate

MeterSLGLP

0.0

SLGLP

Substrate current dependence on Lgate

None

1.0

SVBS

Substrate current dependence on Vbs

None

0.5

SVBSL

Lgate dependence of SVBS

MeterSLBSLP

0.0

SVBSLP

Lgate dependence of SVBS

None

1.0

SVGS

Substrate current dependence on Vgs

None

0.8

SVGSL

Lgate dependence of SVGS

MeterSVGSLP

0.0

SVGSLP

Lgate dependence of SVGS

None

1.0

SVGSW

Wgate dependence of SVGS

MeterSVGSWP

0.0

SVGSWP

Wgate dependence of SVGS

None

1.0


 

 


Level 64 MOSFET II-Induced Bulk Potential Change Parameters

Model Parameter

Description

Unit

Default

IBPC1

Impact-ionization induced bulk potential change

Volt/Ampere

0.0

IBPC2

Impact-ionization induced bulk potential change

Volt-1

0.0


 


Level 66 Gate Leakage Current MOSFET Model Parameters

Model Parameter

Description

Unit

Default

GLEAK1

Gate to channel current coefficient

Amp/(Volt3/2´°C)

50.0

GLEAK2

Gate to channel current coefficient

1/(V0.5´Meter)

10e6

GLEAK3

Gate to channel current coefficient

None

60.0e-3

GLEAK4

Gate to channel current coefficient

1/Meter

4.0

GLEAK5

Gate to channel current coefficient (short channel correction)

Volt/Meter

7.5e3

GLEAK6

Gate to channel current coefficient (Vds dependence correction)

Volt

250e-3

GLEAK7

Gate to channel current coefficient (gate length and width dependence correction

Meter2

1e-6

EGIG (IGTEMP1)

Temperature dependence of gate leakage

Volt

0.0

IGTEMP2

Temperature dependence of gate leakage

Volt-°K

0.0

IGTEMP3

Temperature dependence of gate leakage

Volt-°K2

0.0

GLKSD1

Gate to source/drain current coefficient

Ampere-Meter/Volt2

1e-15

GLKSD2

Gate to source/drain current coefficient

1/(Volt-Meter)

5.0e6

GLKSD3

Gate to source/drain current coefficient

1/Meter

-5.0e6

GLKB1

Gate to bulk current coefficient

Ampere/Volt2

5.0e-16

GLKB2

Gate to bulk current coefficient

Meter/Volt

1.0

GLKB3

Flat-band shift for gate to bulk current

Volt

0.0

GLPART1

Partitioning ration of gate leakage current

None

0.5

FN1

Coefficient of Fowler-Nordheim current contribution

Meter2/Volt1.5

50

FN2

Coefficient of Fowler-Nordheim current contribution

1/(Meter-Volt0.5)

170e-6

FN3

Coefficient of Fowler-Nordheim current contribution

Volt

0.0

FVBS

Vbs dependence of Fowler-Nordheim current

None

12e-3


 


Level 66 MOSFET GIDL Current Parameters

Model Parameter

Description

Unit

Default

GIDL1

Magnitude of GIDL

(Meter-Amp)/(Volt3/2C)

2.0

GIDL2

Field dependence of GIDL

V-2´Meter-1´Farad-3/2

3.0e7

GIDL3

Vds dependence of GIDL

None

0.9

GIDL4

Threshold of Vds dependence

Voltq

Version 231: 0.9

Other: 0.0

GIDL5

Correction of high-field contribution

None

0.2


 


Level 66 MOSFET Symmetry Conservation at Vds=0, Short Channel Model Parameters

Model Parameter

Description

Unit

Default

VZADD0

Symmetry conservation coefficient

Volt

10e-3

PZADD0

Symmetry conservation coefficient

Volt

5e-3

DDLTMAX

Smoothing coefficient for Vds

None

10.0

DDLTSLP

Lgate dependence of smoothing coefficient

None

0.0

DDLTICT

Lgate dependence of smoothing coefficient

None

10.0


 


Level 66 MOSFET Source/Bulk and Drain/Bulk Diode Parameters

Model Parameter

Description

Unit

Default

JS0

Saturation current density

Amp/Meter2

0.5e-6

JS0SW

Sidewall saturation current density

Amp/Meter

0.0

NJ

Emission coefficient

None

1.0

NJSW

Sidewall emission coefficient

None

1.0

XTI

Temperature coefficient for forward cuirrent densities

None

2.0

XTI2

Temperature coefficient for forward cuirrent densities

None

0.0

DIVX

Reverse temperature coefficient

1/Volt

0.0

CTEMP

Temperature coefficient of reverse currents

None

0.0

CISB

Reverse-biased saturation current

Ampere

0.0

CISBK

Reverse-biased saturation current at low temperature

Ampere

0.0

CVB

Bias dependence coefficient of CISB

None

0.0

CVBK

Bias dependence coefficient of CISB at low temperature

None

0.0

CJ

Bottom junction capacitance per unit area at zero bias

Farad/Meter2

5.0e-4

CJSW

Source-drain sidewall junction capacitance per unit length at zero bias

Farad/Meter

5.0e-10

CJSWG

Source-drain sidewall junction capacitance per unit length at zero bias

Farad/Meter

5.0e-10

MJ

Bottom junction capacitance grading coefficient

None

0.5

MJSW

Bulk junction sidewall grading coefficient

None

0.33

MJSWG

Source/drain sidewall junction capacitance grading coefficient

None

0.33

PB

Bulk junction built-in potential

Volt

1.0

PBSW

Source-drain sidewall junction built-in potential

Volt

1.0

PBSWG

Source-drain gate sidewall junction built-in potential

Volt

1.0

VDIFFJ

Diode threshold voltage between source/drain and substrate

Volt

0.6e-3


 


Level 66 MOSFET 1/f Noise Model Parameters

Model Parameter

Description

Unit

Default

CIT

Capacitance caused by the interface trapped carriers

Farad/cm2

0.0

NFALP

Contribution of the mobility fluctuation

Volt-sec

1.0e-19

NFTRP

Ratio of trap density to attenuation coefficient

Volt-1´cm-2

10.0e9


 


Level 66 MOSFET Subthreshold Swing Parameters

Model Parameter

Description

Unit

Default

PTHROU

Correction for subthreshold swing

None

0.0


 


Level 66 MOSFET Non-Quasi-Static Model Parameters

Model Parameter

Description

Unit

Default

DLY1

Coefficient for delay due to diffusion of carriers

Second

100e-12

DLY2

Coefficient for delay due to conduction of carriers

None

0.7

DLY3

Coefficient for RC delay of bulk carriers

Ohm

0.8e-6


 


Level 66 MOSFET Capacitance Parameters

Model Parameter

Description

Unit

Default

CGBO

Gate-bulk overlap capacitance

Farad/Meter

0.0

CGDO

Gate-drain overlap capacitance

Farad/Meter

0.0

CGSO

Gate-source overlap capacitance

Farad/Meter

0.0

XQY

Distance from drain junction to maximum electric field point

Meter

0.0

XQY1

Vbs dependence of Qy

Farad-mmXQY2-1

0.0

XQY2

Lgate dependence of Qy

None

2.0

NOVER

Impurity concentration in the overlap region

cm-3

0.0

LOVER

Overlap length

Meter

50e-9

OVSLP

Coefficient for overlap capacitance

None

2.1e-7

OVMAG

Coefficient for overlap capacitance

Volt

0.6

VFBOVER

Flatband voltage in overlap region

Volt

-0.5


 


Level 66 MOSFET Parasitic Resistance Parameters

Model Parameter

Description

Unit

Default

RS

Source-contact resistance in LDD region

(Volt-Meter)/Ampere

0.0

RD

Drain-contact resistance in LDD region

(Volt-Meter)/Ampere

0.0

RSH

Source/drain sheet resistance

(Volt-square)/Ampere

0.0

RSHG

Gate sheet resistance

(Volt-square)/Ampere

0.0

GBMIN

Substrate resistance network

None

1.0e-12

RBPB

Substrate resistance network

Ohm

50.0

RBPD

Substrate resistance network

Ohm

50.0

RBPS

Substrate resistance network

Ohm

50.0

RBDB

Substrate resistance network

Ohm

50.0

RBSB

Substrate resistance network

Ohm

50.0


 


Level 66 MOSFET Binning Parameters

Model Parameter

Description

Unit

Default

LMIN

Minimum gate length

Meter

0.0

LMAX

Maximum gate length

Meter

1.0

WMIN

Minimum gate width

Meter

0.0

WMAX

Maximum gate width

Meter

1.0

LBINN

 

 

1.0

WBINN

 

 

1.0


 


Level 66 MOSFET Length Dependence Parameters

Model Parameter

Description

Unit

Default

LVMAX

Length dependence of Vmax

None

0.0

LBGTMP1

Length dependence of Bgtmp1

None

0.0

LBGTMP2

Length dependence of Bgtmp2

None

0.0

LEG0

Length dependence of Eg0

None

0.0

LLOVER

Length dependence of Lover

None

0.0

LVFBOVER

Length dependence of Vfbover

None

0.0

LNOVER

Length dependence of Nover

None

0.0

LWL2

Length dependence of WL2

None

0.0

LVFBC

Length dependence of Vfbc

None

0.0

LNSUBC

Length dependence of Nsubc

None

0.0

LNSUBP

Length dependence of Nsubp

None

0.0

LSCP1

Length dependence of Scp1

None

0.0

LSCP2

Length dependence of Scp2

None

0.0

LSCP3

Length dependence of Scp3

None

0.0

LSC1

Length dependence of Sc1

None

0.0

LSC2

Length dependence of Sc2

None

0.0

LSC3

Length dependence of Sc3

None

0.0

LPGD1

Length dependence of Pgd1

None

0.0

LPGD3

Length dependence of Pgd3

None

0.0

LNDEP

Length dependence of Ndep

None

0.0

LNINV

Length dependence of Ninv

None

0.0

LMUECB0

Length dependence of MUecb0

None

0.0

LMUECB1

Length dependence of MUecb1

None

0.0

LMUEPH1

Length dependence of MUeph1

None

0.0

LVTMP

Length dependence of Vtmp

None

0.0

LWVTH0

Length dependence of Wvth0

None

0.0

LMUESR1

Length dependence of MUesr1

None

0.0

LMUETMP

Length dependence of MUetmp

None

0.0

LSUB1

Length dependence of sub1

None

0.0

LSUB2

Length dependence of sub2

None

0.0

LSVDS

Length dependence of SVDS

None

0.0

LSVBS

Length dependence of SVBS

None

0.0

LSVGS

Length dependence of SVGS

None

0.0

LFN1

Length dependence of FN1

None

0.0

LFN2

Length dependence of FN2

None

0.0

LFN3

Length dependence of FN3

None

0.0

LVFBS

Length dependence of Vfbs

None

0.0

LNSTI

Length dependence of NSTI

None

0.0

LWSTI

Length dependence of Wsti

None

0.0

LSCSTI1

Length dependence of SCSTI1

None

0.0

LSCSTI1

Length dependence of SCSTI2

None

0.0

LVTHSTI

Length dependence of Vthsti

None

0.0

LMUESTI1

Length dependence of MUesti1

None

0.0

LMUESTI2

Length dependence of MUesti2

None

0.0

LMUESTI3

Length dependence of MUesti3

None

0.0

LNSUBPSTI1

Length dependence of Nsubpsti1

None

0.0

LNSUBPSTI2

Length dependence of Nsubpsti2

None

0.0

LNSUBPSTI3

Length dependence of Nsubpsti3

None

0.0

LCGSO

Length dependence of Cgso

None

0.0

LCGDO

Length dependence of Cgdo

None

0.0

LJS0

Length dependence of Js0

None

0.0

LJS0SW

Length dependence of Js0sw

None

0.0

LNJ

Length dependence of Nj

None

0.0

LCISBK

Length dependence of Cisbk

None

0.0

LCLM1

Length dependence of Clm1

None

0.0

LCLM2

Length dependence of Clm2

None

0.0

LCLM3

Length dependence of Clm3

None

0.0

LWFC

Length dependence of Wfc

None

0.0

LGIDL1

Length dependence of GIDL1

None

0.0

LGIDL2

Length dependence of GIDL2

None

0.0

LGLEAK1

Length dependence of Gleak1

None

0.0

LGLEAK2

Length dependence of Gleak2

None

0.0

LGLEAK3

Length dependence of Gleak3

None

0.0

LGLEAK6

Length dependence of Gleak6

None

0.0

LGLKSD1

Length dependence of Glksd1

None

0.0

LGLKSD2

Length dependence of Glksd2

None

0.0

LGLKB1

Length dependence of Glkb1

None

0.0

LGLKB2

Length dependence of Glkb2

None

0.0

LNFTRP

Length dependence of Nftrp

None

0.0

LNFALP

Length dependence of Nfalp

None

0.0

LPTHROU

Length dependence of Pthrou

None

0.0

LVDIFFJ

Length dependence of Vdiffj

None

0.0

LIBPC1

Length dependence of Ibpc1

None

0.0

LIBPC2

Length dependence of Ibpc2

None

0.0


 


Level 66 MOSFET Length Dependence Parameters

Model Parameter

Description

Unit

Default

WVMAX

Width dependence of Vmax

None

0.0

WBGTMP1

Width dependence of Bgtmp1

None

0.0

WBGTMP2

Width dependence of Bgtmp2

None

0.0

WEG0

Width dependence of Eg0

None

0.0

WLOVER

Width dependence of Lover

None

0.0

WVFBOVER

Width dependence of Vfbover

None

0.0

WNOVER

Width dependence of Nover

None

0.0

WWL2

Width dependence of WL2

None

0.0

WVFBC

Width dependence of Vfbc

None

0.0

WNSUBC

Width dependence of Nsubc

None

0.0

WNSUBP

Width dependence of Nsubp

None

0.0

WSCP1

Width dependence of Scp1

None

0.0

WSCP2

Width dependence of Scp2

None

0.0

WSCP3

Width dependence of Scp3

None

0.0

WSC1

Width dependence of Sc1

None

0.0

WSC2

Width dependence of Sc2

None

0.0

WSC3

Width dependence of Sc3

None

0.0

WPGD1

Width dependence of Pgd1

None

0.0

WPGD3

Width dependence of Pgd3

None

0.0

WNDEP

Width dependence of Ndep

None

0.0

WNINV

Width dependence of Ninv

None

0.0

WMUECB0

Width dependence of MUecb0

None

0.0

WMUECB1

Width dependence of MUecb1

None

0.0

WMUEPH1

Width dependence of MUeph1

None

0.0

WVTMP

Width dependence of Vtmp

None

0.0

WWVTH0

Width dependence of Wvth0

None

0.0

WMUESR1

Width dependence of MUesr1

None

0.0

WMUETMP

Width dependence of MUetmp

None

0.0

WSUB1

Width dependence of sub1

None

0.0

WSUB2

Width dependence of sub2

None

0.0

WSVDS

Width dependence of SVDS

None

0.0

WSVBS

Width dependence of SVBS

None

0.0

WSVGS

Width dependence of SVGS

None

0.0

WFN1

Width dependence of FN1

None

0.0

WFN2

Width dependence of FN2

None

0.0

WFN3

Width dependence of FN3

None

0.0

WVFBS

Width dependence of Vfbs

None

0.0

WNSTI

Width dependence of NSTI

None

0.0

WWSTI

Width dependence of Wsti

None

0.0

WSCSTI1

Width dependence of SCSTI1

None

0.0

WSCSTI1

Width dependence of SCSTI2

None

0.0

WVTHSTI

Width dependence of Vthsti

None

0.0

WMUESTI1

Width dependence of MUesti1

None

0.0

WMUESTI2

Width dependence of MUesti2

None

0.0

WMUESTI3

Width dependence of MUesti3

None

0.0

WNSUBPSTI1

Width dependence of Nsubpsti1

None

0.0

WNSUBPSTI2

Width dependence of Nsubpsti2

None

0.0

WNSUBPSTI3

Width dependence of Nsubpsti3

None

0.0

WCGSO

Width dependence of Cgso

None

0.0

WCGDO

Width dependence of Cgdo

None

0.0

WJS0

Width dependence of Js0

None

0.0

WJS0SW

Width dependence of Js0sw

None

0.0

WNJ

Width dependence of Nj

None

0.0

WCISBK

Width dependence of Cisbk

None

0.0

WCLM1

Width dependence of Clm1

None

0.0

WCLM2

Width dependence of Clm2

None

0.0

WCLM3

Width dependence of Clm3

None

0.0

WWFC

Width dependence of Wfc

None

0.0

WGIDL1

Width dependence of GIDL1

None

0.0

WGIDL2

Width dependence of GIDL2

None

0.0

WGLEAK1

Width dependence of Gleak1

None

0.0

WGLEAK2

Width dependence of Gleak2

None

0.0

WGLEAK3

Width dependence of Gleak3

None

0.0

WGLEAK6

Width dependence of Gleak6

None

0.0

WGLKSD1

Width dependence of Glksd1

None

0.0

WGLKSD2

Width dependence of Glksd2

None

0.0

WGLKB1

Width dependence of Glkb1

None

0.0

WGLKB2

Width dependence of Glkb2

None

0.0

WNFTRP

Width dependence of Nftrp

None

0.0

WNFALP

Width dependence of Nfalp

None

0.0

WPTHROU

Width dependence of Pthrou

None

0.0

WVDIFFJ

Width dependence of Vdiffj

None

0.0

WIBPC1

Width dependence of Ibpc1

None

0.0

WIBPC2

Width dependence of Ibpc2

None

0.0


 


Level 66 MOSFET Cross Dependence Parameters

Model Parameter

Description

Unit

Default

PVMAX

Cross dependence of Vmax

None

0.0

PBGTMP1

Cross dependence of Bgtmp1

None

0.0

PBGTMP2

Cross dependence of Bgtmp2

None

0.0

PEG0

Cross dependence of Eg0

None

0.0

PLOVER

Cross dependence of Lover

None

0.0

PVFBOVER

Cross dependence of Vfbover

None

0.0

PNOVER

Cross dependence of Nover

None

0.0

PWL2

Cross dependence of WL2

None

0.0

PVFBC

Cross dependence of Vfbc

None

0.0

PNSUBC

Cross dependence of Nsubc

None

0.0

PNSUBP

Cross dependence of Nsubp

None

0.0

PSCP1

Cross dependence of Scp1

None

0.0

PSCP2

Cross dependence of Scp2

None

0.0

PSCP3

Cross dependence of Scp3

None

0.0

PSC1

Cross dependence of Sc1

None

0.0

PSC2

Cross dependence of Sc2

None

0.0

PSC3

Cross dependence of Sc3

None

0.0

PPGD1

Cross dependence of Pgd1

None

0.0

PPGD3

Cross dependence of Pgd3

None

0.0

PNDEP

Cross dependence of Ndep

None

0.0

PNINV

Cross dependence of Ninv

None

0.0

PMUECB0

Cross dependence of MUecb0

None

0.0

PMUECB1

Cross dependence of MUecb1

None

0.0

PMUEPH1

Cross dependence of MUeph1

None

0.0

PVTMP

Cross dependence of Vtmp

None

0.0

PWVTH0

Cross dependence of Wvth0

None

0.0

PMUESR1

Cross dependence of MUesr1

None

0.0

PMUETMP

Cross dependence of MUetmp

None

0.0

PSUB1

Cross dependence of sub1

None

0.0

PSUB2

Cross dependence of sub2

None

0.0

PSVDS

Cross dependence of SVDS

None

0.0

PSVBS

Cross dependence of SVBS

None

0.0

PSVGS

Cross dependence of SVGS

None

0.0

PFN1

Cross dependence of FN1

None

0.0

PFN2

Cross dependence of FN2

None

0.0

PFN3

Cross dependence of FN3

None

0.0

PVFBS

Cross dependence of Vfbs

None

0.0

PNSTI

Cross dependence of NSTI

None

0.0

PWSTI

Cross dependence of Wsti

None

0.0

PSCSTI1

Cross dependence of SCSTI1

None

0.0

PSCSTI1

Cross dependence of SCSTI2

None

0.0

PVTHSTI

Cross dependence of Vthsti

None

0.0

PMUESTI1

Cross dependence of MUesti1

None

0.0

PMUESTI2

Cross dependence of MUesti2

None

0.0

PMUESTI3

Cross dependence of MUesti3

None

0.0

PNSUBPSTI1

Cross dependence of Nsubpsti1

None

0.0

PNSUBPSTI2

Cross dependence of Nsubpsti2

None

0.0

PNSUBPSTI3

Cross dependence of Nsubpsti3

None

0.0

PCGSO

Cross dependence of Cgso

None

0.0

PCGDO

Cross dependence of Cgdo

None

0.0

PJS0

Cross dependence of Js0

None

0.0

PJS0SW

Cross dependence of Js0sw

None

0.0

PNJ

Cross dependence of Nj

None

0.0

PCISBK

Cross dependence of Cisbk

None

0.0

PCLM1

Cross dependence of Clm1

None

0.0

PCLM2

Cross dependence of Clm2

None

0.0

PCLM3

Cross dependence of Clm3

None

0.0

PWFC

Cross dependence of Wfc

None

0.0

PGIDL1

Cross dependence of GIDL1

None

0.0

PGIDL2

Cross dependence of GIDL2

None

0.0

PGLEAK1

Cross dependence of Gleak1

None

0.0

PGLEAK2

Cross dependence of Gleak2

None

0.0

PGLEAK3

Cross dependence of Gleak3

None

0.0

PGLEAK6

Cross dependence of Gleak6

None

0.0

PGLKSD1

Cross dependence of Glksd1

None

0.0

PGLKSD2

Cross dependence of Glksd2

None

0.0

PGLKB1

Cross dependence of Glkb1

None

0.0

PGLKB2

Cross dependence of Glkb2

None

0.0

PNFTRP

Cross dependence of Nftrp

None

0.0

PNFALP

Cross dependence of Nfalp

None

0.0

PPTHROU

Cross dependence of Pthrou

None

0.0

PVDIFFJ

Cross dependence of Vdiffj

None

0.0

PIBPC1

Cross dependence of Ibpc1

None

0.0

PIBPC2

Cross dependence of Ibpc2

None

0.0


 




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