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Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 55 through 99 >
HiSIM2.0 MOSFET Model, Level 66 (COLDMOS=1)

HiSIM2.0 MOSFET Model, Level 66 (COLDMOS=1)

The syntax for a HiSIM2.40 LDMOS FETs model is:

.MODEL modelname NMOS LEVEL=66 COLDMOS=1 [parameter=val] ...

.MODEL modelname PMOS LEVEL=66 COLDMOS=1 [parameter=val] ...

modelname is the name used by MOSFET instances to refer to this .MODEL statement. The LEVEL=66 and COLDMOS=1 entries select the Hiroshima University 2.40 HiSIM2.40 LDMOS FET model.

**HiSIM 2.40 LDMOS Model Selector Parameters**
Model Parameter	Description	Unit	Default
LEVEL	66 is required to select the HiSIM2.0 MOSFET model	None	1 (default if LEVEL parameter is omitted)
COLDMOS	Required selector for the HiSIM2.40 LDMOS model	None	None
VERSION	Version number	None	231
INFO	Info	None	0
NOISE	Channel thermal/flicker noise combination selector	None	1
COADOV	Switch to add overlap capacitances to intrinsic ones	None	1 (yes)
CODFM	Switch to enable design for manufacturing	None	0 (off)
COGIDL	Switch to calculate gate induced drain leakage (GIDL) current	None	0 (no)
COFLICK	Switch to calculate flicker noise	None	0 (no)
COIGN	Switch to calcualte induced gate noise	None	0 (no)
COIIGS	Switch to calculate gate tunneling current	None	0 (no)
COIPRV	Use ids_prv as initial guess of Ids	None	1.0
COISTI	Switch to calculate STI	None	0 (no)
COISUB	Switch to calculate substrate current	None	0 (no)
CONQS	Calculate in NQS or QS mode	None	0
COOVLP	Selector for overlap capacitance model <1 = constant value 0 = approximate the linear reduction of the field >0 = consider the lateral impurity profile	None	0
COPPRV	Use psX_prv as initial guess of prX (X=0\|1)	None	1.0
CORBNET	Activate body resistance (1) or do not activate (0)	None	0
CORG	Activate sheet resistance (1) or do not activate (0)	None	0
CORSRD	RS/RD contact resistor inclusion flag	None	1 (yes)
COTHRM1	Switch to calculate thermal noise	None	0 (no)
NOISE	Channel thermal and flicker noise combination selector 1 = SPICE2 thermal, SPICE2 flicker 2 = HiSIM1 (BSIM3) thermal, HiSIM flicker 3 = SPICE2 thermal, HiSIM1 flicker 4 = HiSIM1 noise, SPICE2 flicker 5 = No thermal, HiSIM1 flicker	None	1

**HiSIM 2.40 LDMOS Basic Device Parameters**
Model Parameter	Description	Unit	Default
TOX	Physical oxide thickness	Meter	30.0e-9
XLD	Gate-overlap length	Meter	30.0e-9
XWD	Gate-overlap width	Meter	0.0
TPOLY	Height of the gate poly-Si for fringing capacitance	Meter	200e-9
LL	Coefficient of gate length modification	None	0.0
LLD	Coefficient of gate length modification	None	0.0
LLN	Coefficient of gate length modification	None	0.0
WL	Coefficient of gate width modification	None	0.0
WLD	Coefficient of gate width modification	None	0.0
WLN	Coefficient of gate width modification	None	0.0
NSUBC	Substrate impurity concentration	cm^-3	1.0e17
NSUBP	Maximum pocket concentration	cm^-3	1.0e17
LP	Pocket penetration langth	Meter	0.0
NPEXT	Maximum concentration of pocket tail	cm^-3	5.0e17
LPEXT	Extension length of pocket tail	Meter	1.0e-50
VBFC	Flat-band voltage	Volt	-1.0
VBI	Built-in potential	Volt	1.1
KAPPA	Dielectric constant for gate dielectric	None	3.9
EG0	Bandgap	eV	1.1785
BGTMP1	Temperature dependence of bandgap	eV/°K	90.25e-6
BGTMP2	Temperature dependence of bandgap	eV/°K²	0.1e-6
TNOM	Circuit nominal temperature	°C	27
XL	Difference between real and drawn gate length	Meter	0.0
XW	Difference between real and drawn gate width	Meter	0.0

**HiSIM 2.40 LDMOS Velocity Parameters**
Model Parameter	Description	Unit	Default
VMAX	Saturation velocity	cm/Second	10e6
VOVER	Velocity overshoot effect	cm^VOVERP	0.3
VOVERP	Leff dependence of velocity overshoot	None	0.3
VTMP	Temperature dependence of the saturation velocity	cm/Second	0.0

**HiSIM 2.40 LDMOS Quantum Effect Model Parameters**
Model Parameter	Description	Unit	Default
QME1	Vgs dependence of quantum mechanical effect	Meter/Volt²	0.0
QME2	Vgs dependence of quantum mechanical effect	Volt	1.0
QME3	Minimum Tox modification	Meter	0.0

**HiSIM 2.40 LDMOS Poly Depletion Model Parameters**
Model Parameter	Description	Unit	Default
PGD1	Strength of poly depletion effect	Volt	0.0
PGD2	Threshold voltage of poly depletion effect	Volt	1.0
PGD3	Vds dependence of poly depletion effect	None	0.8
PGD4	Lgate dependence of poly depletion effect	None	0.0

**HiSIM 2.40 LDMOS Short Channel Model Parameters**
Model Parameter	Description	Unit	Default
PARL2	Depletion width of channel/contact junction	Meter	10e-9
SC1	Magnitude of short-channel effect	None	1.0
SC2	Vds dependence of short-channel effect	Meter/Volt	1.0
SC3	Vbs dependence of short-channel effect	Meter/Volt	0.0
SCP1	Magnitude of short-channel effect due to pocket	None	1.0
SCP2	Vds dependence of short-channel effect due to pocket	Meter/Volt	0.1
SCP3	Vbs dependence of short-channel effect due to pocket	Meter/Volt	0.0
SCP21	Short-channel-effect modification for small Vds	Volt	0.0
SCP22	Short-channel-effect modification for small Vds	Volt⁴	0.0
BS1	Body-coefficient modification by impurity profile	Volt²	0.0
BS2	Body-coefficient modification by impurity profile	Volt	0.9

**HiSIM 2.40 LDMOS Mobility Model Parameters**
Model Parameter	Description	Unit	Default
BB	High-field mobility degradation	None	NMOS: 2.0 PMOS: 1.0
DMPHNSUBC			0.0
MUECB0	Coulomb scattering	cm²/Volt-sec	1000.0
MUECB1	Coulomb scattering	cm²/Volt-sec	100.0
MUEPH0	Phonon scattering	None	0.3
MUEPH1	Phonon scattering	[cm²/(Volt-sec)] ´ (Volt/cm)^MUEPH0]	NMOS: 25.0e3 PMOS: 9.0e3
MUEPHL	Length dependence of phonon mobility reduction	None	0.0
MUEPLP	Length dependence of phonon mobility reduction	None	1.0
MUESR0	Surface-roughness scattering	None	2.0
MUESR1	Surface-roughness scattering	[cm²/(Volt-sec)] ´ [(Volt/cm)^MUESR0]	1.0e16
MUESRL	Length dependence of surface roughness mobility reduction	None	0.0
MUESLP	Length dependence of surface roughness mobility reduction	None	1.0
MUETMP	Temperature dependence of phonon scattering	None	1.7
NDEP	Depletion charge contribution on effective electric field	None	1.0
NDEPL	Modification of depletion charge contribution for short-channel case	None	0.0
NDEPLP	Modification of depletion charge contribution for short-channel case	None	1.0
NINV	Inversion charge contribution on effective electric field	None	0.5

**HiSIM 2.40 LDMOS Narrow Channel Effect Parameters**
Model Parameter	Description	Unit	Default
WFC	Threshold voltage change due to capacitance change	Farad/(cm²-Meter)	0.0
WVTH0	Threshold voltage shift	None	0.0
NSUBP0	Modification of pocket concentration for narrow width	cm^-3	0.0
NSUBWP	Modification of pocket concentration for narrow width	None	1.0
MUEPHW	Phonon-related mobility reduction	None	0.0
MUEPWP	Phonon-related mobility reduction	None	1.0
MUESRW	Change of surface-roughness-related mobility	None	0.0
MUESWP	Change of surface-roughness-related mobility	None	1.0
VTHSTI	Threshold voltage shift due to STI	None	0.0
VDSTI	Vds dependence of STI subthreshold	None	0.0
SCSTI1	The same effect as SC1 but at STI edge	None	0.0
SCSTI2	The same effect as SC2 but at STI edge	None	0.0
NSTI	Substrate-impurity concentration at the STI edge	cm^-3	5.0e17
WSTI	Width of the high-field region at the STI edge	Meter	0.0
WSTIL	Channel length dependence of WSTI	None	0.0
WSTILP	Channel length dependence of WSTI	None	1.0
WSTIW	Channel-width dependence of WSTI	None	0.0
WSTIWP	Channel-width dependence of WSTI	None	1.0
WL1	Threshold voltage shift of STI leakage due to narrow channel effect	None	0.0
WL1P	Threshold voltage shift of STI leakage due to narrow channel effect	None	1.0
NSUBPSTI1	Pocket concentration change due to diffusion-region length between gate and STI	Meter	0.0
NSUBPSTI2	Pocket concentration change due to diffusion-region length between gate and STI	Meter	0.0
NSUBPSTI3	Pocket concentration change due to diffusion-region length between gate and STI	Meter	1.0
MUESTI1	Mobility change due to diffusion-region length between gate and STI	None	0.0
MUESTI2	Mobility change due to diffusion-region length between gate and STI	None	0.0
MUESTI3	Mobility change due to diffusion-region length between gate and STI	None	1.0
SAREF	Length of diffusion between gate and STI	Meter	1e-6
SBREF	Length of diffusion between gate and STI	Meter	1e-6

**HiSIM 2.40 LDMOS Small Size Effect Parameters**
Model Parameter	Description	Unit	Default
WL2	Threshold voltage shift due to small size effect	None	0.0
WL2P	Threshold voltage shift due to small size effect	None	1.0
MUEPHS	Mobility modification due to small size effect	None	0.0
MUEPSP	Mobility modification due to small size effect	None	1.0
VOVERS	Modification of maximum velocity due to small size effect	None	0.0
VOVERSP	Modification of maximum velocity due to small size effect	None	0.0

**HiSIM 2.40 LDMOS Channel Length Modulation Parameters**
Model Parameter	Description	Unit	Default
CLM1	Hardness coefficient of channel/contact junction	None	50.0e-3
CLM2	Coefficient for Q_B contribution	None	2.0
CLM3	Coefficient for Q_I contribution	None	1.0
CLM5	Effect of pocket implantation	None	1.0
CLM6	Effect of pocket implantation	None	0.0

**HiSIM 2.40 LDMOS Substrate Current Parameters**
Model Parameter	Description	Unit	Default
SUB1	Substrate current coefficient of magnitude	Volt^-1	50.0e-3
SUB1L	Lgate dependence of SUB1	Meter	2.5e-3
SUB1LP	Lgate dependence of SUB1	None	1.0
SUB2	Substrate current coefficient of exponential term	Volt	100.0
SUB2L	Lgate dependence of SUB2	Meter	2.0e-6
SVDS	Substrate current dependence on Vds	None	0.8
SLG	Substrate current dependence on Lgate	Meter	3.0e-8
SLGL	Substrate current dependence on Lgate	Meter^SLGLP	0.0
SLGLP	Substrate current dependence on Lgate	None	1.0
SVBS	Substrate current dependence on Vbs	None	0.5
SVBSL	Lgate dependence of SVBS	Meter^SLBSLP	0.0
SVBSLP	Lgate dependence of SVBS	None	1.0
SVGS	Substrate current dependence on Vgs	None	0.8
SVGSL	Lgate dependence of SVGS	Meter^SVGSLP	0.0
SVGSLP	Lgate dependence of SVGS	None	1.0
SVGSW	Wgate dependence of SVGS	Meter^SVGSWP	0.0
SVGSWP	Wgate dependence of SVGS	None	1.0

**HiSIM 2.40 LDMOS II-Induced Bulk Potential Change Parameters**
Model Parameter	Description	Unit	Default
IBPC1	Impact-ionization induced bulk potential change	Volt/Ampere	0.0
IBPC2	Impact-ionization induced bulk potential change	Volt^-1	0.0

**HiSIM 2.40 LDMOS Gate Leakage Current Model Parameters**
Model Parameter	Description	Unit	Default
GLEAK1	Gate to channel current coefficient	Amp/(Volt^3/2´°C)	50.0
GLEAK2	Gate to channel current coefficient	1/(V^0.5´Meter)	10e6
GLEAK3	Gate to channel current coefficient	None	60.0e-3
GLEAK4	Gate to channel current coefficient	1/Meter	4.0
GLEAK5	Gate to channel current coefficient (short channel correction)	Volt/Meter	7.5e3
GLEAK6	Gate to channel current coefficient (Vds dependence correction)	Volt	250e-3
GLEAK7	Gate to channel current coefficient (gate length and width dependence correction	Meter²	1e-6
IGTEMP2	Temperature dependence of gate leakage	Volt-°K	0.0
IGTEMP3	Temperature dependence of gate leakage	Volt-°K²	0.0
GLKSD1	Gate to source/drain current coefficient	Ampere-Meter/Volt²	1e-15
GLKSD2	Gate to source/drain current coefficient	1/(Volt-Meter)	5.0e6
GLKSD3	Gate to source/drain current coefficient	1/Meter	-5.0e6
GLKB1	Gate to bulk current coefficient	Ampere/Volt²	5.0e-16
GLKB2	Gate to bulk current coefficient	Meter/Volt	1.0
GLKB3	Flat-band shift for gate to bulk current	Volt	0.0
GLPART1	Partitioning ration of gate leakage current	None	0.5
FN1	Coefficient of Fowler-Nordheim current contribution	Meter²/Volt^1.5	50
FN2	Coefficient of Fowler-Nordheim current contribution	1/(Meter-Volt^0.5)	170e-6
FN3	Coefficient of Fowler-Nordheim current contribution	Volt	0.0
FVBS	Vbs dependence of Fowler-Nordheim current	None	12e-3

**HiSIM 2.40 LDMOS GIDL Current Parameters**
Model Parameter	Description	Unit	Default
GIDL1	Magnitude of GIDL	(Meter-Amp)/(Volt^3/2-°C)	2.0
GIDL2	Field dependence of GIDL	V^-2´Meter^-1´Farad^-3/2	3.0e7
GIDL3	Vds dependence of GIDL	None	0.9
GIDL4	Threshold of Vds dependence	Voltq	0.0
GIDL5	Correction of high-field contribution	None	0.2

**HiSIM 2.40 LDMOS Symmetry Conservation at Vds=0, Short Channel Model Parameters**
Model Parameter	Description	Unit	Default
VZADD0	Symmetry conservation coefficient	Volt	10e-3
PZADD0	Symmetry conservation coefficient	Volt	5e-3
DDLTMAX	Smoothing coefficient for Vds	None	10.0
DDLTSLP	Lgate dependence of smoothing coefficient	None	0.0
DDLTICT	Lgate dependence of smoothing coefficient	None	10.0

**HiSIM 2.40 LDMOS Source/Bulk and Drain/Bulk Diode Parameters**
Model Parameter	Description	Unit	Default
JS0	Saturation current density	Amp/Meter²	0.5e-6
JS0SW	Sidewall saturation current density	Amp/Meter	0.0
NJ	Emission coefficient	None	1.0
NJSW	Sidewall emission coefficient	None	1.0
XTI	Temperature coefficient for forward cuirrent densities	None	2.0
XTI2	Temperature coefficient for forward cuirrent densities	None	0.0
DIVX	Reverse temperature coefficient	1/Volt	0.0
CTEMP	Temperature coefficient of reverse currents	None	0.0
CISB	Reverse-biased saturation current	Ampere	0.0
CISBK	Reverse-biased saturation current at low temperature	Ampere	0.0
CVB	Bias dependence coefficient of CISB	None	0.0
CVBK	Bias dependence coefficient of CISB at low temperature	None	0.0
CJ	Bottom junction capacitance per unit area at zero bias	Farad/Meter²	5.0e-4
CJSW	Source-drain sidewall junction capacitance per unit length at zero bias	Farad/Meter	5.0e-10
CJSWG	Source-drain sidewall junction capacitance per unit length at zero bias	Farad/Meter	5.0e-10
MJ	Bottom junction capacitance grading coefficient	None	0.5
MJSW	Bulk junction sidewall grading coefficient	None	0.33
MJSWG	Source/drain sidewall junction capacitance grading coefficient	None	0.33
PB	Bulk junction built-in potential	Volt	1.0
PBSW	Source-drain sidewall junction built-in potential	Volt	1.0
PBSWG	Source-drain gate sidewall junction built-in potential	Volt	1.0
VDIFFJ	Diode threshold voltage between source/drain and substrate	Volt	0.6e-3

**HiSIM 2.40 LDMOS 1/f Noise Model Parameters**
Model Parameter	Description	Unit	Default
CIT	Capacitance caused by the interface trapped carriers	Farad/cm²	0.0
NFALP	Contribution of the mobility fluctuation	Volt-sec	1.0e-19
NFTRP	Ratio of trap density to attenuation coefficient	Volt^-1´cm^-2	10.0e9

**HiSIM 2.40 LDMOS Subthreshold Swing Parameters**
Model Parameter	Description	Unit	Default
PTHROU	Correction for subthreshold swing	None	0.0

**HiSIM 2.40 LDMOS Non-Quasi-Static Model Parameters**
Model Parameter	Description	Unit	Default
DLY1	Coefficient for delay due to diffusion of carriers	Second	100e-12
DLY2	Coefficient for delay due to conduction of carriers	None	0.7
DLY3	Coefficient for RC delay of bulk carriers	Ohm	0.8e-6

**HiSIM 2.40 LDMOS Capacitance Parameters**
Model Parameter	Description	Unit	Default
CGBO	Gate-bulk overlap capacitance	Farad/Meter	0.0
CGDO	Gate-drain overlap capacitance	Farad/Meter	0.0
CGSO	Gate-source overlap capacitance	Farad/Meter	0.0
XQY	Distance from drain junction to maximum electric field point	Meter	0.0
XQY1	Vbs dependence of Qy	Farad-mm^XQY2-1	0.0
XQY2	Lgate dependence of Qy	None	2.0
NOVER	Impurity concentration in the overlap region	cm^-3	0.0
LOVER	Overlap length	Meter	30e-9
OVSLP	Coefficient for overlap capacitance	None	2.0e-8
OVMAG	Coefficient for overlap capacitance	Volt	500.0
VFBOVER	Flatband voltage in overlap region	Volt	-0.5

**HiSIM 2.40 LDMOS Parasitic Resistance Parameters**
Model Parameter	Description	Unit	Default
RS	Source-contact resistance in LDD region	(Volt-Meter)/Ampere	0.0
RD	Drain-contact resistance in LDD region	(Volt-Meter)/Ampere	0.0
RSH	Source/drain sheet resistance	(Volt-square)/Ampere	0.0
RSHG	Gate sheet resistance	(Volt-square)/Ampere	0.0
GBMIN	Substrate resistance network	None	1.0e-12
RBPB	Substrate resistance network	Ohm	50.0
RBPD	Substrate resistance network	Ohm	50.0
RBPS	Substrate resistance network	Ohm	50.0
RBDB	Substrate resistance network	Ohm	50.0
RBSB	Substrate resistance network	Ohm	50.0

**HiSIM 2.40 LDMOS Binning Parameters**
Model Parameter	Description	Unit	Default
LMIN	Minimum gate length	Meter	0.0
LMAX	Maximum gate length	Meter	1.0
WMIN	Minimum gate width	Meter	0.0
WMAX	Maximum gate width	Meter	1.0
LBINN			1.0
WBINN			1.0

**HiSIM 2.40 LDMOS Specific Parameters**
Model Parameter	Description	Unit	Default
COSELFHEAT	Switch to enable self-heating effect	None	0
XLDLD	Gate overlap length at drain side	Meter	1.0e-6
LOVERLD	Overlap length at drain side	Meter	1.0e-6
DLYDFT	Coefficient for carrier transit delay	cm²/Volt-sec	5.0e-2
DLYOV	Coefficient for RC delay of carriers	Second/Farad	2.0e-4
MPHDFM	NSUBCDFM dependence of phonon scattering for DFM		-0.3
RDVG11	Vgs dependence of RD for CORSRD=1,3	None	0.1
RDVG12	Vgs dependence of RD for CORSRD=1,3	None	100.0
RDVD	Vds dependence of RD for CORSRD=1,3	Ohm/Volt	20.0
QDFTMAG	Adjustment for capacitance peak	None	0.0
DLD	LOVERLD modification by Vgs	Volt	2.0
RTH0	Thermal resistance	°K/Watt	0.1
CTH0	Thermal capacitance	Watt-second/°K	1.0e-7
QDFTVD			1.0
LLOVERLD	Length dependence of LOVERLD	None	0.0
WLOVERLD	Width dependence of LOVERLD	None	0.0
PLOVERLD	Cross dependence of LOVERLD	None	0.0
RD2	Drain contact resistance	Meter/Ampere	0.0
RD3	Drain contact resistance	Meter/Ampere	0.0
RD20	RD23 boundary for CORSD=2,3	None	0.0
RD21	Vds dependence of RD for CORSD=2,3	None	1.0
RD22	Vbs dependence of RD for CORSD=2,3	Ohm-Meter/Volt	0.0
RD23	Modification of RD for CORSD=2,3	Ohm-Meter/Volt^RD25	0.5
RD24	Vgs dependence of RD for CORSD=2,3	Ohm-Meter/Volt^RD25-1	0.0
RD25	Vgs dependence of RD for CORSD=2,3	Volt	0.0
RD26	Smoothing parameter of RD21 boundary for CORSD=2,3	None	0.001
QOVRAT1	Coefficient for Qover partitioning	None	0.1
QOVRAT2	Coefficient for Qover partitioning	Volt	1.0
RDVDL	Lgate dependence of RD for CORSD=1,3	None	0.0
RDVDLP	Lgate dependence of RD for CORSD=1,3	None	1.0
RDVDS	Small size dependence of RD for CORSD=1,3	None	0.0
RDVDSP	Small size dependence of RD for CORSD=1,3	None	1.0
RD23L	Lgate dependence of RD21 boundary for CORSD=2,3	None	0.0
RD23LP	Lgate dependence of RD21 boundary for CORSD=2,3	None	1.0
RD23S	Small size dependence of RD21 for CORSD=2,3	None	0.0
RD23SP	Small size dependence of RD21 for CORSD=2,3	None	1.0
RDS	Small size dependence of RD21 for CORSD=1,3	None	0.0
RDSP	Small size dependence of RD21 for CORSD=1,3	None	1.0
LDRIFT	Length of drift region	Meter	3.5e-6

**HiSIM 2.40 LDMOS Length Dependence Parameters**
Model Parameter	Description	Unit	Default
LVMAX	Length dependence of Vmax	None	0.0
LBGTMP1	Length dependence of Bgtmp1	None	0.0
LBGTMP2	Length dependence of Bgtmp2	None	0.0
LEG0	Length dependence of Eg0	None	0.0
LLOVER	Length dependence of Lover	None	0.0
LVFBOVER	Length dependence of Vfbover	None	0.0
LNOVER	Length dependence of Nover	None	0.0
LWL2	Length dependence of WL2	None	0.0
LVFBC	Length dependence of Vfbc	None	0.0
LNSUBC	Length dependence of Nsubc	None	0.0
LNSUBP	Length dependence of Nsubp	None	0.0
LSCP1	Length dependence of Scp1	None	0.0
LSCP2	Length dependence of Scp2	None	0.0
LSCP3	Length dependence of Scp3	None	0.0
LSC1	Length dependence of Sc1	None	0.0
LSC2	Length dependence of Sc2	None	0.0
LSC3	Length dependence of Sc3	None	0.0
LPGD1	Length dependence of Pgd1	None	0.0
LPGD3	Length dependence of Pgd3	None	0.0
LNDEP	Length dependence of Ndep	None	0.0
LNINV	Length dependence of Ninv	None	0.0
LMUECB0	Length dependence of MUecb0	None	0.0
LMUECB1	Length dependence of MUecb1	None	0.0
LMUEPH1	Length dependence of MUeph1	None	0.0
LVTMP	Length dependence of Vtmp	None	0.0
LWVTH0	Length dependence of Wvth0	None	0.0
LMUESR1	Length dependence of MUesr1	None	0.0
LMUETMP	Length dependence of MUetmp	None	0.0
LSUB1	Length dependence of sub1	None	0.0
LSUB2	Length dependence of sub2	None	0.0
LSVDS	Length dependence of SVDS	None	0.0
LSVBS	Length dependence of SVBS	None	0.0
LSVGS	Length dependence of SVGS	None	0.0
LFN1	Length dependence of FN1	None	0.0
LFN2	Length dependence of FN2	None	0.0
LFN3	Length dependence of FN3	None	0.0
LVFBS	Length dependence of Vfbs	None	0.0
LNSTI	Length dependence of NSTI	None	0.0
LWSTI	Length dependence of Wsti	None	0.0
LSCSTI1	Length dependence of SCSTI1	None	0.0
LSCSTI1	Length dependence of SCSTI2	None	0.0
LVTHSTI	Length dependence of Vthsti	None	0.0
LMUESTI1	Length dependence of MUesti1	None	0.0
LMUESTI2	Length dependence of MUesti2	None	0.0
LMUESTI3	Length dependence of MUesti3	None	0.0
LNSUBPSTI1	Length dependence of Nsubpsti1	None	0.0
LNSUBPSTI2	Length dependence of Nsubpsti2	None	0.0
LNSUBPSTI3	Length dependence of Nsubpsti3	None	0.0
LCGSO	Length dependence of Cgso	None	0.0
LCGDO	Length dependence of Cgdo	None	0.0
LJS0	Length dependence of Js0	None	0.0
LJS0SW	Length dependence of Js0sw	None	0.0
LNJ	Length dependence of Nj	None	0.0
LCISBK	Length dependence of Cisbk	None	0.0
LCLM1	Length dependence of Clm1	None	0.0
LCLM2	Length dependence of Clm2	None	0.0
LCLM3	Length dependence of Clm3	None	0.0
LWFC	Length dependence of Wfc	None	0.0
LGIDL1	Length dependence of GIDL1	None	0.0
LGIDL2	Length dependence of GIDL2	None	0.0
LGLEAK1	Length dependence of Gleak1	None	0.0
LGLEAK2	Length dependence of Gleak2	None	0.0
LGLEAK3	Length dependence of Gleak3	None	0.0
LGLEAK6	Length dependence of Gleak6	None	0.0
LGLKSD1	Length dependence of Glksd1	None	0.0
LGLKSD2	Length dependence of Glksd2	None	0.0
LGLKB1	Length dependence of Glkb1	None	0.0
LGLKB2	Length dependence of Glkb2	None	0.0
LNFTRP	Length dependence of Nftrp	None	0.0
LNFALP	Length dependence of Nfalp	None	0.0
LPTHROU	Length dependence of Pthrou	None	0.0
LVDIFFJ	Length dependence of Vdiffj	None	0.0
LIBPC1	Length dependence of Ibpc1	None	0.0
LIBPC2	Length dependence of Ibpc2	None	0.0

**HiSIM 2.40 LDMOS Length Dependence Parameters**
Model Parameter	Description	Unit	Default
WVMAX	Width dependence of Vmax	None	0.0
WBGTMP1	Width dependence of Bgtmp1	None	0.0
WBGTMP2	Width dependence of Bgtmp2	None	0.0
WEG0	Width dependence of Eg0	None	0.0
WLOVER	Width dependence of Lover	None	0.0
WVFBOVER	Width dependence of Vfbover	None	0.0
WNOVER	Width dependence of Nover	None	0.0
WWL2	Width dependence of WL2	None	0.0
WVFBC	Width dependence of Vfbc	None	0.0
WNSUBC	Width dependence of Nsubc	None	0.0
WNSUBP	Width dependence of Nsubp	None	0.0
WSCP1	Width dependence of Scp1	None	0.0
WSCP2	Width dependence of Scp2	None	0.0
WSCP3	Width dependence of Scp3	None	0.0
WSC1	Width dependence of Sc1	None	0.0
WSC2	Width dependence of Sc2	None	0.0
WSC3	Width dependence of Sc3	None	0.0
WPGD1	Width dependence of Pgd1	None	0.0
WPGD3	Width dependence of Pgd3	None	0.0
WNDEP	Width dependence of Ndep	None	0.0
WNINV	Width dependence of Ninv	None	0.0
WMUECB0	Width dependence of MUecb0	None	0.0
WMUECB1	Width dependence of MUecb1	None	0.0
WMUEPH1	Width dependence of MUeph1	None	0.0
WVTMP	Width dependence of Vtmp	None	0.0
WWVTH0	Width dependence of Wvth0	None	0.0
WMUESR1	Width dependence of MUesr1	None	0.0
WMUETMP	Width dependence of MUetmp	None	0.0
WSUB1	Width dependence of sub1	None	0.0
WSUB2	Width dependence of sub2	None	0.0
WSVDS	Width dependence of SVDS	None	0.0
WSVBS	Width dependence of SVBS	None	0.0
WSVGS	Width dependence of SVGS	None	0.0
WFN1	Width dependence of FN1	None	0.0
WFN2	Width dependence of FN2	None	0.0
WFN3	Width dependence of FN3	None	0.0
WVFBS	Width dependence of Vfbs	None	0.0
WNSTI	Width dependence of NSTI	None	0.0
WWSTI	Width dependence of Wsti	None	0.0
WSCSTI1	Width dependence of SCSTI1	None	0.0
WSCSTI1	Width dependence of SCSTI2	None	0.0
WVTHSTI	Width dependence of Vthsti	None	0.0
WMUESTI1	Width dependence of MUesti1	None	0.0
WMUESTI2	Width dependence of MUesti2	None	0.0
WMUESTI3	Width dependence of MUesti3	None	0.0
WNSUBPSTI1	Width dependence of Nsubpsti1	None	0.0
WNSUBPSTI2	Width dependence of Nsubpsti2	None	0.0
WNSUBPSTI3	Width dependence of Nsubpsti3	None	0.0
WCGSO	Width dependence of Cgso	None	0.0
WCGDO	Width dependence of Cgdo	None	0.0
WJS0	Width dependence of Js0	None	0.0
WJS0SW	Width dependence of Js0sw	None	0.0
WNJ	Width dependence of Nj	None	0.0
WCISBK	Width dependence of Cisbk	None	0.0
WCLM1	Width dependence of Clm1	None	0.0
WCLM2	Width dependence of Clm2	None	0.0
WCLM3	Width dependence of Clm3	None	0.0
WWFC	Width dependence of Wfc	None	0.0
WGIDL1	Width dependence of GIDL1	None	0.0
WGIDL2	Width dependence of GIDL2	None	0.0
WGLEAK1	Width dependence of Gleak1	None	0.0
WGLEAK2	Width dependence of Gleak2	None	0.0
WGLEAK3	Width dependence of Gleak3	None	0.0
WGLEAK6	Width dependence of Gleak6	None	0.0
WGLKSD1	Width dependence of Glksd1	None	0.0
WGLKSD2	Width dependence of Glksd2	None	0.0
WGLKB1	Width dependence of Glkb1	None	0.0
WGLKB2	Width dependence of Glkb2	None	0.0
WNFTRP	Width dependence of Nftrp	None	0.0
WNFALP	Width dependence of Nfalp	None	0.0
WPTHROU	Width dependence of Pthrou	None	0.0
WVDIFFJ	Width dependence of Vdiffj	None	0.0
WIBPC1	Width dependence of Ibpc1	None	0.0
WIBPC2	Width dependence of Ibpc2	None	0.0

**HiSIM 2.40 LDMOS Cross Dependence Parameters**
Model Parameter	Description	Unit	Default
PVMAX	Cross dependence of Vmax	None	0.0
PBGTMP1	Cross dependence of Bgtmp1	None	0.0
PBGTMP2	Cross dependence of Bgtmp2	None	0.0
PEG0	Cross dependence of Eg0	None	0.0
PLOVER	Cross dependence of Lover	None	0.0
PVFBOVER	Cross dependence of Vfbover	None	0.0
PNOVER	Cross dependence of Nover	None	0.0
PWL2	Cross dependence of WL2	None	0.0
PVFBC	Cross dependence of Vfbc	None	0.0
PNSUBC	Cross dependence of Nsubc	None	0.0
PNSUBP	Cross dependence of Nsubp	None	0.0
PSCP1	Cross dependence of Scp1	None	0.0
PSCP2	Cross dependence of Scp2	None	0.0
PSCP3	Cross dependence of Scp3	None	0.0
PSC1	Cross dependence of Sc1	None	0.0
PSC2	Cross dependence of Sc2	None	0.0
PSC3	Cross dependence of Sc3	None	0.0
PPGD1	Cross dependence of Pgd1	None	0.0
PPGD3	Cross dependence of Pgd3	None	0.0
PNDEP	Cross dependence of Ndep	None	0.0
PNINV	Cross dependence of Ninv	None	0.0
PMUECB0	Cross dependence of MUecb0	None	0.0
PMUECB1	Cross dependence of MUecb1	None	0.0
PMUEPH1	Cross dependence of MUeph1	None	0.0
PVTMP	Cross dependence of Vtmp	None	0.0
PWVTH0	Cross dependence of Wvth0	None	0.0
PMUESR1	Cross dependence of MUesr1	None	0.0
PMUETMP	Cross dependence of MUetmp	None	0.0
PSUB1	Cross dependence of sub1	None	0.0
PSUB2	Cross dependence of sub2	None	0.0
PSVDS	Cross dependence of SVDS	None	0.0
PSVBS	Cross dependence of SVBS	None	0.0
PSVGS	Cross dependence of SVGS	None	0.0
PFN1	Cross dependence of FN1	None	0.0
PFN2	Cross dependence of FN2	None	0.0
PFN3	Cross dependence of FN3	None	0.0
PVFBS	Cross dependence of Vfbs	None	0.0
PNSTI	Cross dependence of NSTI	None	0.0
PWSTI	Cross dependence of Wsti	None	0.0
PSCSTI1	Cross dependence of SCSTI1	None	0.0
PSCSTI1	Cross dependence of SCSTI2	None	0.0
PVTHSTI	Cross dependence of Vthsti	None	0.0
PMUESTI1	Cross dependence of MUesti1	None	0.0
PMUESTI2	Cross dependence of MUesti2	None	0.0
PMUESTI3	Cross dependence of MUesti3	None	0.0
PNSUBPSTI1	Cross dependence of Nsubpsti1	None	0.0
PNSUBPSTI2	Cross dependence of Nsubpsti2	None	0.0
PNSUBPSTI3	Cross dependence of Nsubpsti3	None	0.0
PCGSO	Cross dependence of Cgso	None	0.0
PCGDO	Cross dependence of Cgdo	None	0.0
PJS0	Cross dependence of Js0	None	0.0
PJS0SW	Cross dependence of Js0sw	None	0.0
PNJ	Cross dependence of Nj	None	0.0
PCISBK	Cross dependence of Cisbk	None	0.0
PCLM1	Cross dependence of Clm1	None	0.0
PCLM2	Cross dependence of Clm2	None	0.0
PCLM3	Cross dependence of Clm3	None	0.0
PWFC	Cross dependence of Wfc	None	0.0
PGIDL1	Cross dependence of GIDL1	None	0.0
PGIDL2	Cross dependence of GIDL2	None	0.0
PGLEAK1	Cross dependence of Gleak1	None	0.0
PGLEAK2	Cross dependence of Gleak2	None	0.0
PGLEAK3	Cross dependence of Gleak3	None	0.0
PGLEAK6	Cross dependence of Gleak6	None	0.0
PGLKSD1	Cross dependence of Glksd1	None	0.0
PGLKSD2	Cross dependence of Glksd2	None	0.0
PGLKB1	Cross dependence of Glkb1	None	0.0
PGLKB2	Cross dependence of Glkb2	None	0.0
PNFTRP	Cross dependence of Nftrp	None	0.0
PNFALP	Cross dependence of Nfalp	None	0.0
PPTHROU	Cross dependence of Pthrou	None	0.0
PVDIFFJ	Cross dependence of Vdiffj	None	0.0
PIBPC1	Cross dependence of Ibpc1	None	0.0
PIBPC2	Cross dependence of Ibpc2	None	0.0

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