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HiSIM2.40 LDMOS FET Instance Netlist Syntax

The syntax for a Level 66 HiSIM2.40 LDMOS FET instance is:

Mxxxx nd ng ns [nb] modelname [[L=]length] [[W=]width]

[AD=val] [AS=val] [PD=val] [PS=val]
[NRD=val] [NRS=val][XGW=val] [XGL=val]
[NF=val] [NGCON=val] [LOD=val] [TEMP=val] [DTEMP=val]
[M=val] [SA=val] [SB=val] [SD=val] [DNSUBC=val]
[RBPB=val] [RBPD=val] [RBPS=val] [RBDB=val] [RBSB=val]
[CORBNET=val] [CORG=val] [ICVBS=val] [ICVDS=val] [ICVGS=val]

nd is the drain node, ng is the gate node, ns is the source node, and nb is the bulk or substrate node of the MOSFET. modelname is the name of a Level 66 LDMOS FET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

**HiSIM 2.40 LDMOS Instance Parameters**
Instance Parameter	Description	Unit	Default
AD	Drain area	Meter²	0.0
AS	Source area	Meter²	0.0
CORBNET	Activate body resistance (1) or do not activate (0)	None	0
CORG	Activate sheet resistance (1) or do not activate (0)	None	0
NSUBCDFM	Substrate impurity concentration	1/cm³	None
DTEMP	Difference between device and circuit temperatures	°C	0.0
ICVBS			0.0
ICVDS			0.0
ICVGS			0.0
L	Channel length	Meter	5.0e-6
LOD	Length of diffusion between gate and STI	Meter	10.0e-6
M	Multiplier for multiple parallel transistors	None	1.0
NF	Number of gate fingers	None	1.0
NGCON	Number of gate contacts	None	1.0
NRD	Number of squares for drain	Square	1.0
NRS	Number of squares for source	Square	1.0
PD	Drain perimeter	Meter	0.0
PS	Source perimeter	Meter	0.0
RBDB	Substrate resistance network	Ohm	50.0
RBPB	Substrate resistance network	Ohm	50.0
RBPD	Substrate resistance network	Ohm	50.0
RBPS	Substrate resistance network	Ohm	50.0
RBSB	Substrate resistance network	Ohm	50.0
SA	Length of diffusion between gate and STI	Meter	0.0
SB	Length of diffusion between gate and STI	Meter	0.0
SD			0.0
TEMP	Device temperature	°K	Calculated
W	Channel width	Meter	5.0e-6
XGL	Offset of gate length	Meter	0.0
XGW	Distance from gate contact to channel edge	Meter	0.0


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MOSFET Instance, HiSIM2.40 LDMOS (Level 66, COLDMOS=1)

HiSIM2.40 LDMOS FET Instance Netlist Syntax