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Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 55 through 99 >
   MOSFET Instance, HiSIM2.0 Model (Level 66)       

MOSFET Instance, HiSIM2.0 Model (Level 66)

 

HiSIM2.0 MOSFET Instance Netlist Syntax

The syntax for a Level 66 HiSIM2.0 MOSFET instance is:

Mxxxx nd ng ns [nb] modelname [[L=]length] [[W=]width]

[AD=val] [AS=val] [PD=val] [PS=val]
[NRD=val] [NRS=val][XGW=val] [XGL=val]
[NF=val] [NGCON=val] [LOD=val] [TEMP=val] [DTEMP=val]
[M=val] [SA=val] [SB=val] [SD=val] [DNSUBC=val]
[RBPB=val] [RBPD=val] [RBPS=val] [RBDB=val] [RBSB=val]
[CORBNET=val] [CORG=val] [ICVBS=val] [ICVDS=val] [ICVGS=val]

nd is the drain node, ng is the gate node, ns is the source node, and nb is the bulk or substrate node of the MOSFET. modelname is the name of a Level 66 MOSFET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

[AD=val] [AS=val] [PD=val] [PS=val]
[NRD=val] [NRS=val][XGW=val] [XGL=val]
[NF=val] [NGCON=val] [LOD=val] [TEMP=val] [DTEMP=val]
[M=val] [SA=val] [SB=val] [SD=val] [DNSUBC=val]
[RBPB=val] [RBPD=val] [RBPS=val] [RBDB=val] [RBSB=val]
[CORBNET=val] [CORG=val] [ICVBS=val] [ICVDS=val] [ICVGS=val]

 


Level 66 MOSFET Instance Parameters

Instance Parameter

Description

Unit

Default

AD

Drain area

Meter2

0.0

AS

Source area

Meter2

0.0

CORBNET

Activate body resistance (1) or do not activate (0)

None

0

CORG

Activate sheet resistance (1) or do not activate (0)

None

0

DNSUBC (NSUBCDFM)

Substrate impurity concentration

1/cm3

None

DTEMP

Difference between device and circuit temperatures

°C

0.0

ICVBS

 

 

0.0

ICVDS

 

 

0.0

ICVGS

 

 

0.0

L

Channel length

Meter

5.0e-6

LOD

Length of diffusion between gate and STI

Meter

10.0e-6

M

Multiplier for multiple parallel transistors

None

1.0

NF

Number of gate fingers

None

1.0

NGCON

Number of gate contacts

None

1.0

NRD

Number of squares for drain

Square

1.0

NRS

Number of squares for source

Square

1.0

PD

Drain perimeter

Meter

0.0

PS

Source perimeter

Meter

0.0

RBDB

Substrate resistance network

Ohm

50.0

RBPB

Substrate resistance network

Ohm

50.0

RBPD

Substrate resistance network

Ohm

50.0

RBPS

Substrate resistance network

Ohm

50.0

RBSB

Substrate resistance network

Ohm

50.0

SA

Length of diffusion between gate and STI

Meter

0.0

SB

Length of diffusion between gate and STI

Meter

0.0

SD

 

 

0.0

TEMP

Device temperature

°K

Calculated

W

Channel width

Meter

5.0e-6

XGL

Offset of gate length

Meter

0.0

XGW

Distance from gate contact to channel edge

Meter

0.0





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