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Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 55 through 99 >
HiSIM1.0 MOSFET Model, Level 64

HiSIM1.0 MOSFET Model, Level 64

The syntax for a LEVEL 64 MOSFET model is:

.MODEL modelname NMOS LEVEL=64 [(][parameter=val] ... [)]

.MODEL modelname PMOS LEVEL=64 [(][parameter=val] ... [)]

modelname is the name used by MOSFET instances to refer to this .MODEL statement. The LEVEL=64 entry selects the Hiroshima University STARC IGFET Version 1.0 (HiSIM1.0) MOSFET model.

**Level 64 MOSFET Model Selector Parameters**
Model Parameter	Description	Unit	Default
LEVEL	64 is required to select the HiSIM1.0 MOSFET model	None	1 (default if LEVEL parameter is omitted)
INFO	Info	None	0
COADOV	Switch to add overlap capacitances to intrinsic ones	None	1 (yes)
COCGBO	Switch to calculate gate-bulk overlap capacitance by CGBO	None	0 (no)
COCGDO	Switch to calculate gate-drain overlap capacitance by CGDO	None	0 (no)
COCGSO	Switch to calculate gate-source overlap capacitance by CGSO	None	0 (no)
COGIDL	Switch to calculate gate induced drain leakage (GIDL) current	None	0 (no)
COIIGS	Switch to calculate gate tunneling current	None	0 (no)
COIPRV		None	1.0
COISUB	Switch to calculate substrate current	None	0 (no)
CONOIS	Switch to calculate 1/f noise	None	0 (no)
COOVLP	Selector for overlap capacitance model <1 = constant value 0 = approximate the linear reduction of the field >0 = consider the lateral impurity profile	None	0
COPPRV		None	1.0
CORSRD	RS/RD contact resistor inclusion flag	None	0 (no)
COXX08		None	0.0
COXX09		None	0.0
NOISE	Channel thermal and flicker noise combination selector 1 = SPICE2 thermal, SPICE2 flicker 2 = HiSIM1 (BSIM3) thermal, HiSIM flicker 3 = SPICE2 thermal, HiSIM1 flicker 4 = HiSIM1 noise, SPICE2 flicker 5 = No thermal, HiSIM1 flicker	None	5

**Level 64 MOSFET Technological Model Parameters**
Model Parameter	Description	Unit	Default
LP	Pocket penetration length	Meter	0.0
NSUBC	Substrate impurity concentration	cm-3	5.94e+17
NSUBP	Maximum pocket concentration	cm-3	5.94e+17
RD	Drain-contact resistance	Ohm-Meter	0.0
RS	Source-contact resistance	Ohm-Meter	0.0
TOX	Oxide thickness	Meter	3.6e-9
TPOLY	Height of the gate polysilicon	Meter	0.0
VFBC	Flatband voltage	Volt	-0.722729
XJ	Junction depth	Meter	0.0
XLD	Gate overlap length	Meter	0.0
XPOLYD	Difference between gate-poly and design lengths	Meter	0.0
XWD	Gate overlap width	Meter	0.0

**Level 64 MOSFET Temperature Dependence Parameters**
Model Parameter	Description	Unit	Default
BGTMP1	Bandgap narrowing	eV/°K	9.03e-5
BGTMP2	Bandgap narrowing	eV/°K²	3.05e-7

**Level 64 MOSFET Quantum Effect Model Parameters**
Model Parameter	Description	Unit	Default
QME1	Coefficient for quantum mechanical effect	Volt-Meter	0.0
QME2	Coefficient for quantum mechanical effect	Volt	0.0
QME3	Coefficient for quantum mechanical effect	Meter	0.0

**Level 64 Poly Depletion MOSFET Model Parameters**
Model Parameter	Description	Unit	Default
PGD1	Strength of poly depletion	Volt	0.0
PGD2	Threshold voltage of poly depletion	Volt	0.0
PGD3	Vds dependence of poly depletion	None	0.0

**Level 64 Short Channel MOSFET Model Parameters**
Model Parameter	Description	Unit	Default
PARL1	Strength of lateral electric field gradient	None	1.0
PARL2	Depletion width of channel/contact junction	Meter	2.2e-8
SC1	Short-channel coefficient 1	None	13.5
SC2	Short-channel coefficient 2	Volt^-1	1.8
SC3	Short-channel coefficient 3	Meter/Volt	0.0
SCP1	Short-channel coefficient 1 for pocket	None	0.0
SCP2	Short-channel coefficient 2 for pocket	Volt^-1	0.0
SCP3	Short-channel coefficient 3 for pocket	Meter/Volt	0.0

**Level 64 Narrow Channel MOSFET Model Parameters**
Model Parameter	Description	Unit	Default
MUEPH2	Mobility reduction	None	0.0
W0	Minimum gate width	log(cm)	0.0
WFC	Threshold voltage reduction	Farad-Meter/cm²	0.0

**Level 64 MOSFET Mobility Model Parameters**
Model Parameter	Description	Unit	Default
BB	High-field mobility degradation	None	NMOS: 2.0 PMOS: 1.0
MUECB0	Coulomb scattering	cm²/Volt-sec	300.0
MUECB1	Coulomb scattering	cm²/ [(Volt-sec) ´ (Volt-cm)^MUEPH1]	30.0
MUEPH0	Phonon scattering	None	0.295
MUEPH1	Phonon scattering	None	1.0e+7
MUESR0	Surface-roughness scattering	cm²/ [(Volt-sec) ´ (Volt-cm)^MUESR1]	1.0
MUESR1	Surface-roughness scattering	None	7.0e+8
MUETMP	Temperature dependence of phonon scattering	None	0.0
NDEP	Coefficient of effective electric field	None	1.0
NINV	Coefficient of effective electric field	None	0.5
NINVD	Modification of NINV	Volt^-1	0.0
RPOCK1	Coefficient of resistance caused by the potential barrier	Volt²´ mMeter^(1-RPOCP1) ´ Amp^(1-RPOCP2)	0.0
RPOCK2	Coefficient of resistance caused by the potential barrier	Volt	0.0
VMAX	Maximum saturation velocity	cm/sec	1.0e+7
VOVER	Velocity overshoot effect	cm^VOVERP	0.0
VOVERP	Lgate dependence of velocity overshoot	None	0.0

**Level 64 Channel Length Modulation MOSFET Model Parameters**
Model Parameter	Description	Unit	Default
CLM1	Hardness coefficient of channel/contact junction	None	0.3
CLM2	Coefficient for Q_B contribution	None	0.0
CLM3	Coefficient for Q_I contribution	None	0.0

**Level 64 MOSFET Substrate Current Model Parameters**
Model Parameter	Description	Unit	Default
SUB1	Substrate current coefficient 1	Volt^-1	0.0
SUB2	Substrate current coefficient 2	Volt	-70.0
SUB3	Substrate current coefficient 3	None	1.0

**Level 64 Gate Current MOSFET Model Parameters**
Model Parameter	Description	Unit	Default
GLEAK1	Gate current coefficient 1	Amp/(Volt^3/2´°C)	0.0
GLEAK2	Gate current coefficient 2	V^-2´Meter^-1´Farad^-3/2	0.0
GLEAK3	Gate current coefficient 3	None	0.0

**Level 64 GIDL Current MOSFET Model Parameters**
Model Parameter	Description	Unit	Default
GIDL1	GIDL current coefficient 1	Meter´Amp/(Volt^3/2´°C)	0.0
GIDL2	GIDL current coefficient 2	V^-2´Meter^-1´Farad^-3/2	0.0
GIDL3	GIDL current coefficient 3	None	0.0

**Level 64 MOSFET 1/f Noise Model Parameters**
Model Parameter	Description	Unit	Default
AF	Flicker noise exponent	None	1.0
CIT	Capacitance caused by the interface trapped carriers	Farad/cm²	0.0
EF	Flicker noise frequency exponent	None	0.0
KF	Flicker noise coefficient	None	0.0
NFALP	Contribution of the mobility fluctuation	Volt-sec	2.0e-15
NFTRP	Ratio of trap density to attenuation coefficient	Volt^-1´cm^-2	1.0e+11

**Level 64 Symmetry Conservation at Vds=0, Short Channel MOSFET Model Parameters**
Model Parameter	Description	Unit	Default
PZADD0	Symmetry conservation coefficient	Volt	1.0e-3
VZADD0	Symmetry conservation coefficient	Volt	1.0e-2

**Level 64 MOSFET Additional Capacitance Model Parameters**
Model Parameter	Description	Unit	Default
CGBO	Gate-bulk overlap capacitance	Farad/Meter	0.0
CGDO	Gate-drain overlap capacitance	Farad/Meter	0.0
CGSO	Gate-source overlap capacitance	Farad/Meter	0.0
CJ	Bottom junction capacitance per unit area at zero bias	Farad/Meter²	8.397247e-4
CJSW	Source-drain sidewall junction capacitance per unit length at zero bias	Farad/Meter	5.0e-10
CJSWG	Source-drain sidewall junction capacitance per unit length at zero bias	Farad/Meter	5.0e-10
JS0	Saturation current density	Amp/Meter²	1.0e-4
JS0SW	Sidewall saturation current density	Amp/Meter	0.0
MJ	Bottom junction capacitance grading coefficient	None	0.5
MJSW	Bulk junction sidewall grading coefficient	None	0.33
MJSWG	Source/drain sidewall junction capacitance grading coefficient	None	0.33
NJ	Emission coefficient	None	1.0
NJSW	Sidewall emission coefficient	None	1.0
PB	Bulk junction built-in potential	Volt	1.0
PBSW	Source-drain sidewall junction built-in potential	Volt	1.0
PBSWG	Source-drain gate sidewall junction built-in potential	Volt	1.0
XTI	Junction current temperature exponent	None	3.0

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