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Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 55 through 99 >
MOSFET Instance, HiSIM1.0 Model (Level 64)

MOSFET Instance, HiSIM1.0 Model (Level 64)

HiSIM1.0 MOSFET Instance Netlist Syntax

The syntax for a Level 64 HiSIM1.0 MOSFET instance is:

Mxxxx nd ng ns [nb] modelname [[L=]length] [[W=]width]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val]

[SOURCECONDUCT=val] [DRAINCONDUCT=val]

[TEMP=val] [DTEMP=val]

nd is the drain node, ng is the gate node, ns is the source node, and nb is the bulk or substrate node of the MOSFET. modelname is the name of a Level 64 MOSFET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val]

[SOURCECONDUCT=val] [DRAINCONDUCT=val]

[TEMP=val] [DTEMP=val]

**Level 64 MOSFET Instance Parameters**
Instance Parameter	Description	Unit	Default
L	Channel length	Meter	1.5e-4
W	Channel width	Meter	5.55e-4
AD	Drain area	Meter²	0.0
AS	Source area	Meter²	0.0
PD	Drain perimeter	Meter	0.0
PS	Source perimeter	Meter	0.0
NRD	Number of squares for drain	Square	0.0
NRS	Number of squares for source	Square	0.0
DRAINCONDUCT	Drain contact conductance	Siemens	0.0
SOURCECONDUCT	Source contact conductance	Siemens	0.0
TEMP	Device temperature	°K	300.15
DTEMP	Difference between device and circuit temperatures	°C	0.0

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