LEVEL=62 MOSFET Model
Parameters
Model Parameter
|
Description
|
Unit
|
Default
|
LEVEL=62
|
Selects RPI AIM-SPICE MOS16 Poly-Si
TFT MOSFET model
|
None
|
1
|
VERSION
|
Version number
|
None
|
1.0
|
ACM
|
Area calculation method
|
None
|
0
|
AF
|
Flicker noise exponent
|
None
|
1.0
|
ASAT
|
Proportionality constant of VSAT
|
None
|
1.0
|
AT
|
DIBL parameter 1
|
Meter/Volt
|
3.0e-8
|
BLK
|
Leakage barrier lower constant
|
None
|
0.001
|
BT
|
DIBL parameter 2
|
Volt-Meter
|
1.9e-6
|
CAPMOD
|
Capacitance model selector
|
None
|
0
|
CGDO
|
Gate-drain overlap capacitance
per meter channel width
|
Farad/Meter
|
Not used if not provided
|
CGSO
|
Gate-source overlap capacitance
per meter channel width
|
Farad/Meter
|
Not used if not provided
|
CLK (I0)
|
Leakage scaling constant
|
Amp/Meter
|
6.0
|
CT
|
ALPHASAT length coefficient
|
|
0.0
|
DASAT
|
Temperature coefficient of ASAT
|
°C-1
|
0.0
|
DD
|
Vds field constant
|
Meter
|
1400e-10
|
DELTA
|
Transition width parameter
|
None
|
4.0
|
DG
|
Transition width parameter
|
Meter
|
2000e-10
|
DMU1
|
Temperature coefficient of MU1
|
cm2/Volt-sec-°C
|
0.0
|
DVT
|
Difference between VON and VTO
|
Volt
|
0.0
|
DVTO (DVT0)
|
Temperature coefficient of DVT
|
|
0.0
|
EB
|
Barrier height of diode
|
electron-Volt
|
0.68
|
EPS
|
Substrate dielectric constant
|
|
11.0
|
ETA
|
Subthreshold ideality factor
|
None
|
7.0
|
ETAC0
|
Capacitance subthreshold ideality
factor at zero drain bias
|
None
|
ETA
|
ETAC00
|
Capacitance subthreshold coefficient
of drain bias
|
Volt-1
|
0.0
|
HDIF
|
Length of heavily-doped idffusion
region
|
Meter
|
0.0
|
I00
|
Reverse diode saturation current
|
Amp/Meter
|
150
|
INTDSNOD
|
Intrinsic source and drain flag
|
None
|
0.0
|
ISUBMOD
|
Channel length modulation flag
|
None
|
0.0
|
KSS
|
Fractions of channel resistance
(small signal parameter)
|
None
|
0.0
|
L0
|
Length at which ALPHASAT saturates
|
Meter
|
0.0
|
LAMBDA
|
Channel length modulation parameter
|
|
0.048
|
LASAT
|
Coefficient for length dependence
of ASAT
|
Meter
|
0.0
|
LD
|
Lateral diffucion into channel
|
Meter
|
Not used if not present
|
LDIF
|
Length of heavily doped diffusion
region
|
Meter
|
0.0
|
LKINK
|
Kink effect constant
|
Meter
|
19.0e-6
|
LMLT
|
Shrink factor
|
None
|
1.0
|
LMS
|
MS length coefficient
|
|
0.0
|
LS
|
Channel length modulation
|
|
35.0e-9
|
LU0
|
MU0 length coefficient
|
|
0.0
|
LU1
|
Low field mobility length coefficient
|
|
0.0
|
MC
|
Capacitance knee shape parameter
|
None
|
3.0
|
ME (MS)
|
Long channel transition
|
|
2.5
|
META
|
ETA floating body
|
|
1.0
|
METO
|
Fringing field constant
|
None
|
0.0
|
MINME
|
Minimum of ME
|
|
2.0
|
MINR
|
Minimum resistance
|
Ohm
|
0.1
|
MK (MKINK)
|
Kink effect exponent
|
None
|
1.3
|
MMU (M)
|
Low field mobility exponent
|
None
|
1.7
|
MSS
|
Vdse transition
|
|
1.5
|
MU0
|
High field mobility
|
cm2/Volt-sec
|
100
|
MU1
|
Low field mobility parameter
|
cm2/Volt-sec
|
0.0022
|
MUS
|
Subthreshold mobility
|
cm2/Volt-sec
|
1.0
|
RD
|
Drain resistance
|
Ohm
|
0.0
|
RDC
|
Drain contact ohmic resistance
|
Ohm
|
0.0
|
RDX
|
Resistance in series with Cgd
|
Ohm
|
0.0
|
RS
|
Source resistance
|
Ohm
|
0.0
|
RSC
|
Source contact ohmic resistance
|
Ohm
|
0.0
|
RSH
|
Sheet resistance
|
Ohm
|
0.0
|
RSX
|
Resistance in series with Cgs
|
Ohm
|
0.0
|
SCALEM
|
Length and width scale factor
|
None
|
1.0
|
SCALERPI
|
Scaling selector
|
|
0.0
|
SIGMA
|
Minimum leakage
|
|
1.0e-14
|
THETA
|
Mobility modulation
|
|
0.0
|
TNOM
|
Temperature at which parameters
are extracted
|
°C
|
27
|
TOX
|
Thin-oxide thickness
|
Meter
|
1.0e-7
|
TRISE
|
Temperature rise from ambient
|
|
0.0
|
VFB
|
Flatband voltage
|
Volt
|
NMOS: -3.0
PMOS: 3.0
|
VKINK
|
Kink effect voltage
|
Volt
|
9.1
|
VMAX
|
Carrier saturation velocity
|
|
4.0e4
|
VON
|
On-state voltage
|
Volt
|
0.0
|
VP
|
CLM voltage
|
Volt
|
0.2
|
VSI (VSIGMA)
|
Above threshold DIBL (Vgs dependence
parameter)
|
Volt
|
2.0
|
VST (VSIGMAT)
|
Above threshold DIBL (Vgs dependence
parameter)
|
Volt
|
2.0
|
VTO (VT0)
|
Zero-bias threshold voltage
|
Volt
|
Not used if not present
|
WD
|
Width of lateral diffusion
|
Meter
|
0.0
|
WMLT
|
Width shrink factor
|
|
1.0
|
XJ
|
Junction depth
|
Meter
|
1.5e-7
|
XL
|
Correction for mask etch effect
|
|
0.0
|
XW
|
Correction for mask etch effect
|
|
0.0
|
ZEROC
|
Flag for capacitance calculation
in CAPMOD=1
0 = calculate capacitance
1 = set capacitance to 0
|
None
|
0
|