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MOSFET Levels 55 through 99 >
BSIM3-SOI MOSFET Model, Level 57

BSIM3-SOI MOSFET Model, Level 57

The syntax for a BSIM3-SOI Level 57 MOSFET model is:

.MODEL modelname NMOS LEVEL=57 [(][parameter=val] ... [)]

.MODEL modelname PMOS LEVEL=57 [(][parameter=val] ... [)]

modelname is the name used by MOSFET instances to refer to this .MODEL statement. The LEVEL=57 entry selects a BSIM3-SOI MOSFET model.

**Level 57 MOSFET Control Model Parameters**
Model Parameter	Description	Unit	Default
LEVEL	57 is required to select the BSIM3-SOI MOSFET model	None	1 (default if LEVEL parameter is omitted)
CAPMOD	Flag for short-channel capacitance model	None	2
FNOIMOD	Flicker noise model selector	None	1.0
IGMOD	Gate current model selector	None	0.0
IGCMOD	Gate-channel current model selector	None	0.0
MOBMOD	Mobility model selector	None	1
NOIMOD	Noise model selector	None	1
RGATEMOD	Gate resistance model selector	None	0.0
SCALEM	Model parameter scale factor	None	1.0
SHMOD	Self-heating model selector 0 = No self-heating 1 = Self-heating	None	0
SOIMOD	SOI model selector	None	0.0
TNOIMOD	Thermal noise model selector	None	0.0
VERSION	Model version selector	None	3.22

**Level 57 MOSFET Process Model Parameters**
Model Parameter	Description	Unit	Default
DTOXCV	Difference between electrical and physical gate oxide thicknesses (CAPMOD = 3)	Meter	0.0
NCH	Channel doping concentration	cm^-3	1.7e+17
NGATE	Polysilicon gate doping concentration	cm^-3	0.0
NSUB	Substrate doping concentration	cm^-3	6.0e+16
TBOX	Buried oxide thickness	Meter	3.0e-7
TOX	Gate oxide thickness	Meter	1.0e-8
TOXM	Gate oxide thickness used in extraction	Meter	TOX
TSI	Silicon film thickness	Meter	1.0e-7
XGL	Offset of gate length due to variations in patterning	Meter	0.0
XGW	Distance from gate contact to channel edge	Meter	0.0
XJ	Source/drain junction depth	Meter	Calculated
XT	Doping depth	Meter	1.55e-7
XW	Correction for masking and etching effects	Meter	0.0

**Level 57 MOSFET DC Model Parameters**
Model Parameter	Description	Unit	Default
A0	Bulk charge effect coefficient for channel length	None	1.0
A1	1st non-saturation effect parameter	Volt^-1	0.0
A2	2nd non-saturation effect parameter	None	1.0
AELY	Channel length dependency of Early voltage for bipolar current	Volt/Meter	0.0
AGIDL	GIDL constant	Ohm^-1	0.0
AGS	Gate bias coefficient of A_bulk	Volt^-1	0.0
AHLI	High-level injection parameter for bipolar current	None	0.0
AIGC	Parameter for Igc	None	Calculated
AIGSD	Parameter for Igs,d	None	Calculated
ALPHA0	1st parameter of impact ionization current	Meter/Volt	0.0
ALPHAGB1	1st Vox-dependent parameter for gate current in inversion	Volt^-1	0.35
ALPHAGB2	1st Vox-dependent parameter for gate current in accumulation	Volt^-1	0.43
B0	Bulk charge effect coefficient for channel width	Meter	0.0
B1	Bulk charge effect width offset	Meter	0.0
BETA0	1st Vds dependence parameter of impact ionization current	Volt^-1	0.0
BETA1	2nd Vds dependence parameter of impact ionization current	None	0.0
BETA2	3rd Vds dependence parameter of impact ionization current	Volt	0.1
BETAGB1	2nd Vox-dependent parameter for gate current in inversion	Volt^-2	0.03
BETAGB2	2nd Vox-dependent parameter for gate current in accumulation	Volt^-2	0.05
BGIDL	GIDL exponential coefficient	Volt/Meter	0.0
BIGC	Parameter for Igc	None	Calculated
BIGSD	Parameter for Igs,d	None	Calculated
CDSC	Drain/source to channel coupling capacitance	Farad/Meter²	2.4e-4
CDSCB	Body-bias sensitivity of CDSC	Farad/Meter²	0.0
CDSCD	Drain-bias sensitivity of CDSC	Farad/Meter²	0.0
CIGC	Parameter for Igc	None	Calculated
CIGSD	Parameter for Igs,d	None	Calculated
CIT	Interface trap capacitance	Farad/Meter²	0.0
DELTA	Effective Vds parameter	None	0.01
DELTAVOX	Vox smoothing parameter	None	0.005
DK2B	Third backgate body effect parameter for short channel effect	None	0.0
DLCIG	Delta L for Ig model	Meter	LINT
DROUT	Length dependence coefficient of the DIBL correection parameter Rout	None	0.56
DSUB	DIBL coefficient exponent	None	DROUT
DVBD0	1st short-channel effect parameter in FD module	None	0.0
DVBD1	2nd short-channel effect parameter in FD module	None	0.0
DVT0	1st coefficient of short-channel effect on Vth	None	2.2
DVT0W	1st coefficient of narrow-width effect on Vth for small channel length	None	0.0
DVT1	2nd coefficient of short-channel effect on Vth	None	0.53
DVT1W	2nd coefficient of narrow-width effect on Vth for small channel length	None	5.3e+6
DVT2	Body-bias coefficient of short-channel effect on Vth	Volt^-1	-0.032
DVT2W	Body-bias coefficient of narrow-width effect on Vth for small channel length	Volt^-1	-0.032
DWB	Coefficient of Weff gate dependence	Meter/Volt^½	0.0
DWBC	Width offset for body contact isolation edge	Meter	0.0
DWG	Coefficient of Weff gate dependence	Meter/Volt	0.0
EBG	Effective band gap in gate current calculation	Volt	1.2
ESATII	Saturation channel electric field for impact ionization current	Volt/Meter	1.0e+7
ETA0	DIBL coefficient in the subthreshold region	None	0.08
ETAB	Body-bias coefficient for the subthreshold DIBL effect	Volt^-1	-0.07
FBJTII	Fraction of bipolar current affecting impact ionization	None	0.0
GAMMA1	Vth body coefficient	None	Calculated
GAMMA2	Vth body coefficient	None	Calculated
ISBJT	BJT injection saturation current	Amp/Meter²	1.0e-6
ISDIF	Body to source/draininjection saturation current	Amp/Meter²	0.0
ISREC	Recombination in depletion saturation current	Amp/Meter²	1.0e-5
ISTUN	Reverse tunneling saturation current	Amp/Meter²	0.0
K1	1st-order body effect coefficient	Volt^½	0.53
K1B	1st backgate body effect parameter	None	1.0
K1W1	1st-order effect width dependent parameter	Meter	0.0
K1W2	2nd-order effect width dependent parameter	Meter	0.0
K2	2nd-order body effect coefficient	None	-0.0186
K2B	2nd backgate body effect parameter for short-channel effect	None	0.0
K3	3rd-order body effect coefficient	None	0.0
K3B	Body effect coefficient of K3	Volt^-1	0.0
KB1	Back gate body charge coefficient	None	1.0
KETA	Body-bias coefficient of bulk change effect	Volt^-1	-0.6
KETAS	Surface potential adjuxtment for bulk charge effect	Volt	0.0
LBJT0	Reference channel length for bipolar current	Meter	0.2e-6
LII	Length dependence parameter for impact ionization current	None	0.0
LINT	Length offset fitting parameter from I-V without bias	Meter	0.0
LL	Length reduction parameter	None	0.0
LLC	Length reduction parameter	None	0.0
LLN	Length reduction parameter	None	1.0
LN	Electron/hole diffusion length	Meter	2.0e-6
LW	Length reduction parameter	None	0.0
LWC	Length reduction parameter	None	0.0
LWL	Length reduction parameter	None	0.0
LWLC	Length reduction parameter	None	0.0
LWN	Length reduction parameter	None	1.0
MOINFD	Gate bias dependence coefficient of surface potential in FD module	None	1.0e3
NBJT	Power coefficient of channel length dependency for bipolar current	None	1.0
NDIODE	Diode non-ideality factor	None	1.0
NFACTOR	Subthreshold swing factor	None	1.0
NGCON	Number of gate contacts	None	1.0
NGIDL	GIDL Vds enhancement coefficient	Volt	1.2
NIGC	Parameter for Igc slope	None	1.0
NLX	Lateral non-uniform doping parameter	Meter	1.74e-7
NOFFFD	Smoothing parameter	None	1.0
NRECF0	Recombination non-ideality factor at forward bias	None	2.0
NRECR0	Recombination non-ideality factor at reverse bias	None	10.0
NTOX	Power term of gate current	None	1.0
NTUN	Reverse tunneling non-ideality factor	None	10.0
PCLM	Channel length modulation parameter	None	1.3
PDIBLC1	1st output resistance DIBL effect correction parameter	None	0.39
PDIBLC2	2nd output resistance DIBL effect correction parameter	None	0.0086
PDIBLCB	Body effect on drain-induced barrier lowering	None	0.0
PIGCD	Parameter for Igc partition	None	1.0
POXEDGE	Factor for gate edge Tox	None	1.0
PRWB	Body effect coefficient of RDSW	Volt^-1	0.0
PRWG	Gate bias effect coefficient of RDSW	Volt^-^½	0.0
PVAG	Vate dependence of Early voltage	None	0.0
RBODY	Intrinsic body contact sheet resistance	Ohm/Meter²	0.0
RBSH	Extrinsic body contact sheet resistance	Ohm/Meter²	0.0
RDSW	Parasitic resistance per unit width	Ohm/mMeter^WR	100
RHALO	Body halo sheet resistance	Ohm/Meter	1.0e15
RSH	Source/drain sheet resistance	Ohm/square	0.0
RSHG	Gate sheet resistance	Ohm/square	0.0
SII0	1st Vgs dependence parameter for impact ionization current	Volt^-1	0.50
SII1	2nd Vgs dependence parameter for impact ionization current	Volt^-1	0.1
SII2	3rd Vgs dependence parameter for impact ionization current	Volt^-1	0.0
SIID	Vds dependence parameter of drain saturation voltage for impact ionization current	Volt^-1	0.0
TII	Temperature dependence parameter for impact ionization current	None	0.0
TOXQM	Oxide thickness for Igb calculation	Meter	TOX
TOXREF	Target oxide thickness	Meter	2.5e-9
U0	Mobility at TEMP = TNOM	Meter/Volt-sec	NMOS: 0.067 PMOS: 0.025
UA	1st-order mobility degradation coefficient	Meter/Volt	2.25e-9
UB	2nd-order mobility degradation coefficient	Meter/Volt²	5.87e-19
UC	Body effect of mobility degradation coefficient	Volt^-1	Calculated
VABJT	Early voltage for bipolar current	Volt	10
VBM	Maximum body voltage	Volt	3.0
VBSA	Offset voltage	Volt	0.0
VBS0FD	Lower bound of built-in potential lowering for ideal FD operation	Volt	0.0
VBS0PD	Upper bound of built-in potential lowering for ideal FD operation	Volt	0.5
VBX	Vth transition body voltage	Volt	Calculated
VDSATII0	Nominal drain saturation voltage at threshold for impact ionization current	Volt	0.9
VECB	Electron tunneling from the conduction band	Volt	0.026
VEVB	Electron tunneling from the valence band	Volt	0.075
VGB1	3rd Vox-dependent parameter for gate current in inversion	Volt	300
VGB2	3rd Vox-dependent parameter for gate current in accumulation	Volt	17.0
VOFF	Offset voltage in the subthreshold region for large W and L	Volt	-0.08
VOFFFD	Smoothing parameter	None	0.0
VOXH	Limit of Vox in gate current calculation	Volt	5.0
VREC0	Voltage dependent parameter for recombination current	Volt	0.0
VSAT	Saturation velocity at TEMP = TNOM	Meter/sec	8.0e+4
VTH0 (VTHO)	Threshold voltage at Vbs = 0 for long wide device	Volt	Calculated
VTUN0	Voltage dependent parameter for tunneling current	Volt	0.0
W0	Narrow width parameter	Meter	2.5e-6
WINT	Width offset fitting parameter from I-V without bias	Meter	0.0
WL	Width reduction parameter	None	0.0
WLC	Width reduction parameter	None	0.0
WLN	Width reduction parameter	None	1.0
WR	Width offset from Weff for RDS calculation	None	1.0
WTH0	Minimum width for thermal resistance calculation	Meter	0.0
WW	Width reduction parameter	None	0.0
WWC	Width reduction parameter	None	0.0
WWL	Width reduction parameter	None	0.0
WWLC	Width reduction parameter	None	0.0
WWN	Width reduction parameter	None	1.0
XRCRG1	Parameter for distributed channel resistance effect for intrinsic input resistance	None	0.0
XRCRG2	Parameter to account for excess channel diffusion resistance for intrinsic input resistance	None	0.0

**Level 57 MOSFET AC and Capacitance Model Parameters**
Model Parameter	Description	Unit	Default
ACDE	Exponential coefficient for charge thickness in CAPMOD=3 for accumulation and depletion regions	Meter/Volt	1.0
ASD	Source/drain bottom diffusion smoothing parameter	Volt	0.3
CF	Gate to source/drain fringing field capacitance	Farad/Meter	Calculated
CGDL	Lightly-doped drain-gate region overlap capacitance	Farad/Meter	0.0
CGDO	Non-LDD region drain-gate overlap capacitance per unit gate width	Farad/Meter	Calculated
CGEO	Gate-substrate overlap capacitance per unit gate width	Farad/Meter	0.0
CGSL	Lightly-doped source-gate region overlap capacitance	Farad/Meter	0.0
CGSO	Non-LDD region source-gate overlap capacitance per unit gate width	Farad/Meter	Calculated
CJSWG	Zero-bias sidewall bulk junction capacitance	Farad/Meter²	1.0e-10
CKAPPA	Coefficient for lightly-doped region overlap capacitance	Volt	0.6
CLC	Constant term for the short-channel model	Meter	1.0e-8
CLE	Exponential term for the short-channel model	None	0.0
CSDESW	Source/drain sidewall fringing capacitance per unit length	Farad/Meter	0.0
CSDMIN	Source/drain bottom diffusion minimum capacitance	Farad	Calculated
DELVT	Threshold voltage adjust for C-V	Volt	0.0
DLBG	Length offset fitting parameter for back gate charge	Meter	0.0
DLC	Length offset fitting parameter for gate charge	Meter	LINT
DLCB	Length offset fitting parameter for body charge	Meter	0.0
DWC	Width offset fitting parameter from C-V	Meter	WINT
FBODY	Scaling factor for body charge	None	1.0
LDIF0	Channel length dependency coefficient of diffusion capacitance	None	1.0
MJSWG	Source/drain (gate side) sidewall junction capacitance grading coefficient	Volt	0.5
MOIN	Coefficient for the gate bias-dependent surface potential	Volt^½	15.0
NDIF	Power coefficient of channel length dependency for diffusion capacitance	None	-1.0
NOFF	Switch to turn C-V on/off	None	1.0
PBSWG	Source/drain (gate side) sidewall junction capacitance built-in potnetial	Volt	0.7
TT	Diffusion capacitance transit time coefficient	Second	1.0e-12
VSDFB	Source/drain bottom diffusion capacitance flatband voltage	Volt	Calculated
VSDTH	Source/drain bottom diffusion capacitance threshold voltage	Volt	Calculated
XPART	Selector for gate capacitance drain versus source charge sharing coefficient 0, 0.4 = 40/60 0.5 = 50/50 ³ 1 = 0/100 Any other value < 1 = 40/60	None	0 (40/60)

**Level 57 MOSFET Temperature Model Parameters**
Model Parameter	Description	Unit	Default
AT	Temperature coefficient of VSAT	Meter/sec	3.3e+4
CTH0	Normalized thermal capacitance	Meter-°C/Ohm-sec	1.0e-5
KT1	Temperature coefficient for the threshold voltage	Volt	-0.11
KT2	Body-bias coefficient of the threshold voltage temperature effect	None	0.022
KT1L	Channel length dependence of the temperature coefficient for the threshold voltage	Volt-Meter	0.0
NTRECF	Temperature coefficient for NRECF	None	0.0
NTRECR	Temperature coefficient for NRECR	None	0.0
PRT	Temperature coefficient for RDSW	Ohm-mMeter	0.0
RTH0	Normalized thermal resistance	Meter-°C/Ohm	0.0
TCJSWG	Temperature coefficient for CJSWG	°K^-1	0.0
TNOM	Temperature at which parameters are extracted	°C	Circuit temperature
TPBSWG	Temperature coefficient for PBSWG	Volt/°K	0.0
UA1	Temperature coefficient for UA	Meter/Volt	4.31e-9
UB1	Temperature coefficient for UB	Meter²/Volt²	-7.61e-18
UC1	Temperature coefficient for UC	Vol^t-1	Calculated
UTE	Mobility temperature exponent	None	-1.5
XBJT	Power dependence of JBJT on temperature	None	2.0
XDIF	Power dependence of JDIF on temperature	None	2.0
XREC	Power dependence of JREC on temperature	None	1.0
XTUN	Power dependence of JTUN on temperature	None	0.0

**Level 57 MOSFET Noise Model Parameters**
Model Parameter	Description	Unit	Default
AF	Flicker noise exponent	None	1.0
EF	Flicker noise frequency exponent	None	1.0
EM	Flicker noise parameter	None	4.1e7
KF	Flicker noise coefficient	None	0.0
NOIA	Flicker noise parameter	None	NMOS: 1.0e20 PMOS: 9.9e18
NOIB	Flicker noise parameter	None	NMOS: 1.0e4 PMOS: 2.4e3
NOIC	Flicker noise parameter	None	NMOS: -1.4e-12 PMOS: 1.4e-12
NOIF	Floating body excess noise ideality factor	None	1.0
NTNOI	Noise factor for short-channel devices (TNOIMOD = 0 or 2)	None	1.0
RNOIA	Thermal noise parameter	None	0.577
RNOIB	Thermal noise parameter	None	0.37
TNOIA	Coefficient of channel length dependence of total channel thermal noise	None	1.5
TNOIB	Channel length dependence parameter for channel thermal noise partitioning	None	3.5

**Level 57 MOSFET Binning Model Parameters**
Model Parameter	Description	Unit	Default
BINUNIT	Binning unit selector	None	1.0
LMIN	Minimum channel length	Meter	0.0
LMAX	Maximum channel length	Meter	1.0
WMIN	Minimum channel width	Meter	0.0
WMAX	Maximum channel width	Meter	1.0

Notes on BSIM3SOI Binning Adjustment

Binning is a way to extend a single device architecture by providing systematic variations on the device parameters. The philosophy is that when you vary the channel geometry, other parameters also change, in ways that can be completely characterized by the device manufacturer. The manufacturer or foundry provides a “design kit” that contains a set of .MODEL statements specifying the parameter settings for the different geometries. The design kit with the .MODEL statements can be included in the Nexxim design as a subcircuit.

1. A binning model is identified by giving the model name in the .MODEL statement the form modelname.n, where the entry n after the decimal point can be an integer or any other unique identifier. The MOSFET instance definition refers to the modelname without any extension. The netlist can contain any number of different binning models with the same base modelname. For example, three binning models could be named NMOSBSIM3.1 NMOSBSIM3.2, and NMOSBSIM3.3. The instance statement would reference simply NMOSBSIM3.

Each of the available binning models corresponds to a range of channel lengths and widths specified with the LMIN, LMAX, WMIN, and WMAX model parameters. The ranges must not overlap.

Each binning model typically specifies values for the model parameters that are related to the channel geometry variations.

2. The MOSFET instance statement must contain values for instance parameters L and W. The L and W parameters can be specified with variables so that a sweep of binning models can be performed.

3. The simulator finds the binning model to which the following conditions BOTH apply:

• The LMIN and LMAX model parameter range includes the value of instance parameter L (scaled by the instance parameter SCALE).

• The WMIN and WMAX model parameter range includes the value of instance parameter W (scaled by the instance parameter SCALE).

If none of the available binning models matches the L and W instance parameters, simulation does not proceed.

4. Within a BSIM3 model, (binned or not) the binned model parameters are adjusted by the effective channel length and width. The formulas for the adjustment use the following symbols:

N = value of the model parameter, for example A0.

LN = value of the length dependence parameter, for example LA0.

WN = value of the width dependence parameter, for example WA0.

PN = value of the cross dependence parameter, for example PA0.

Leff = effective channel length (calculated from L using scale factors and other adjustments).

Weff = effective channel width (calculated from W using scale factors and other adjustments).

LREFeff = effective reference channel length (calculated from model parameter LREF using scale factors and other adjustments).

WREFeff = effective reference channel width (calculated from WREF using scale factors and other adjustments).

When model parameter BINFLAG is greater than 0.9 AND the model parameters LREF and WREF are both greater than 0:

Value = N + LN*(1/Leff-1/LREFeff)
+ WN*(1/Weff-1/WREFeff)
+ PN*(1/(Leff-1/LREFeff)*(1/(Weff-1/WREFeff)))

Otherwise:

Value = N + LN*(1/Leff) + WN*(1/Weff) + PN*(1/(Leff*Weff))

5. When model parameter BINUNIT equals 1, the effective parameters (Leff, Weff, LREFeff, and WREFeff) are scaled to units of microns. By default (BINUNIT not equal to 1), units are meters.

**Level 57 MOSFET Dependence Parameters**
Model Parameter	Description	Unit	Default
Lnch	Length dependence of Nch	None	0.0
Wnch	Width dependence of Nch	None	0.0
Pnch	Cross-term dependence of Nch	None	0.0
lnsub	Length dependence of Nsub	None	0.0
Wnsub	Width dependence of Nsub	None	0.0
Pnsub	Cross-term dependence of Nsub	None	0.0
Lngate	Length dependence of Ngate	None	0.0
Wngate	Width dependence of Ngate	None	0.0
Pngate	Cross-term dependence of Ngate	None	0.0
Lvth0 (lvtho)	Length dependence of Vth0	None	0.0
Wvth0 (lvtho)	Width dependence of Vth0	None	0.0
Pvth0 (lvtho)	Cross-term dependence of Vth0	None	0.0
Lk1	Length dependence of K1	None	0.0
Wk1	Width dependence of K1	None	0.0
Pk1	Cross-term dependence of K1	None	0.0
Lk2	Length dependence of K2	None	0.0
Wk2	Width dependence of K2	None	0.0
Pk2	Cross-term dependence of K2	None	0.0
Lk3	Length dependence of K3	None	0.0
Wk3	Width dependence of K3	None	0.0
Pk3	Cross-term dependence of K3	None	0.0
Lkb1	Length dependence of KB1	None	0.0
Wkb1	Width dependence of KB1	None	0.0
Pkb1	Cross-term dependence of KB1	None	0.0
Lk3b	Length dependence of K3B	None	0.0
Wk3b	Width dependence of K3B	None	0.0
Pk3b	Cross-term dependence of K3B	None	0.0
Lk1w1	Length dependence of K1W1	None	0.0
Wk1w1	Width dependence of K1W1	None	0.0
Pk1w1	Cross-term dependence of K1W1	None	0.0
Lk1w2	Length dependence of K1W2	None	0.0
Wk1w2	Width dependence of K1W2	None	0.0
Pk1w2	Cross-term dependence of K1W2	None	0.0
Lw0	Length dependence of W0	None	0.0
Ww0	Width dependence of W0	None	0.0
Pw0	Cross-term dependence of W0	None	0.0
Lnlx	Length dependence of Nlx	None	0.0
Wnlx	Width dependence of Nlx	None	0.0
Pnlx	Cross-term dependence of Nlx	None	0.0
Ldvt0	Length dependence of DVT0	None	0.0
Wdvt0	Width dependence of DVT0	None	0.0
Pdvt0	Cross-term dependence of DVT0	None	0.0
Ldvt1	Length dependence of DVT1	None	0.0
Wdvt1	Width dependence of DVT1	None	0.0
Pdvt1	Cross-term dependence of DVT1	None	0.0
Ldvt2	Length dependence of DVT2	None	0.0
Wdvt2	Width dependence of DVT2	None	0.0
Pdvt2	Cross-term dependence of DVT2	None	0.0
Ldvt0w	Length dependence of DVT0W	None	0.0
Wdvt0w	Width dependence of DVT0W	None	0.0
Pdvt0w	Cross-term dependence of DVT0W	None	0.0
Ldvt1w	Length dependence of DVT1W	None	0.0
Wdvt1w	Width dependence of DVT1W	None	0.0
Pdvt1w	Cross-term dependence of DVT1W	None	0.0
Ldvt2w	Length dependence of DVT2W	None	0.0
Wdvt2w	Width dependence of DVT2W	None	0.0
Pdvt2w	Cross-term dependence of DVT2W	None	0.0
Lu0	Length dependence of U0	None	0.0
Wu0	Width dependence of U0	None	0.0
Pu0	Cross-term dependence of U0	None	0.0
Lua	Length dependence of UA	None	0.0
Wua	Width dependence of UA	None	0.0
Pua	Cross-term dependence of UA	None	0.0
Lub	Length dependence of UB	None	0.0
Wub	Width dependence of UB	None	0.0
Pub	Cross-term dependence of UB	None	0.0
Luc	Length dependence of UC	None	0.0
Wuc	Width dependence of UC	None	0.0
Puc	Cross-term dependence of UC	None	0.0
Lvsat	Length dependence of Vsat	None	0.0
Wvsat	Width dependence of Vsat	None	0.0
Pvsat	Cross-term dependence of Vsat	None	0.0
La0	Length dependence of A0	None	0.0
Wa0	Width dependence of A0	None	0.0
Pa0	Cross-term dependence of A0	None	0.0
La1	Length dependence of A1	None	0.0
Wa1	Width dependence of A1	None	0.0
Pa1	Cross-term dependence of A1	None	0.0
La2	Length dependence of A2	None	0.0
Wa2	Width dependence of A2	None	0.0
Pa2	Cross-term dependence of A2	None	0.0
Lb0	Length dependence of B0	None	0.0
Wb0	Width dependence of B0	None	0.0
Pb0	Cross-term dependence of B0	None	0.0
Lb1	Length dependence of B1	None	0.0
Wb1	Width dependence of B1	None	0.0
Pb1	Cross-term dependence of B1	None	0.0
Lags	Length dependence of Ags	None	0.0
Wags	Width dependence of Ags	None	0.0
Pags	Cross-term dependence of Ags	None	0.0
Lketa	Length dependence of KETA	None	0.0
Wketa	Width dependence of KETA	None	0.0
Pketa	Cross-term dependence of KETA	None	0.0
Lketas	Length dependence of KETAS	None	0.0
Wketas	Width dependence of KETAS	None	0.0
Pketas	Cross-term dependence of KETAS	None	0.0
Lrdsw	Length dependence of RDSW	None	0.0
Wrdsw	Width dependence of RDSW	None	0.0
Prdsw	Cross-term dependence of RDSW	None	0.0
Lprwb	Length dependence of PRWB	None	0.0
Wprwb	Width dependence of PRWB	None	0.0
Pprwb	Cross-term dependence of PRWB	None	0.0
Lprwg	Length dependence of PRWG	None	0.0
Wprwg	Width dependence of PRWG	None	0.0
Pprwg	Cross-term dependence of PRWG	None	0.0
Lwr	Length dependence of WR	None	0.0
Wwr	Width dependence of WR	None	0.0
Pwr	Cross-term dependence of WR	None	0.0
Lnfactor	Length dependence of NFACTOR	None	0.0
Wnfactor	Width dependence of NFACTOR	None	0.0
Pnfactor	Cross-term dependence of NFACTOR	None	0.0
Ldwb	Length dependence of DWB	None	0.0
Wdwb	Width dependence of DWB	None	0.0
Pdwb	Cross-term dependence of DWB	None	0.0
Ldwg	Length dependence of DWG	None	0.0
Wdwg	Width dependence of DWG	None	0.0
Pdwg	Cross-term dependence of DWG	None	0.0
Lvoff	Length dependence of Voff	None	0.0
Wvoff	Width dependence of Voff	None	0.0
Pvoff	Cross-term dependence of Voff	None	0.0
Leta0	Length dependence of ETA0	None	0.0
Weta0	Width dependence of ETA0	None	0.0
Peta0	Cross-term dependence of ETA0	None	0.0
Letab	Length dependence of ETAB	None	0.0
Wetab	Width dependence of ETAB	None	0.0
Petab	Cross-term dependence of ETAB	None	0.0
Ldsub	Length dependence of DSUB	None	0.0
Wdsub	Width dependence of DSUB	None	0.0
Pdsub	Cross-term dependence of DSUB	None	0.0
Lcit	Length dependence of CIT	None	0.0
Wcit	Width dependence of CIT	None	0.0
Pcit	Cross-term dependence of CIT	None	0.0
Lcdsc	Length dependence of CDSC	None	0.0
Wcdsc	Width dependence of CDSC	None	0.0
Pcdsc	Cross-term dependence of CDSC	None	0.0
Lcdscb	Length dependence of CDSCB	None	0.0
Wcdscb	Width dependence of CDSCB	None	0.0
Pcdscb	Cross-term dependence of CDSCB	None	0.0
Lcdscd	Length dependence of CDSCD	None	0.0
Wcdscd	Width dependence of CDSCD	None	0.0
Pcdscd	Cross-term dependence of CDSCD	None	0.0
Lpclm	Length dependence of PCLM	None	0.0
Wpclm	Width dependence of PCLM	None	0.0
Ppclm	Cross-term dependence of PCLM	None	0.0
Lpdiblc1	Length dependence of PDIBLC1	None	0.0
Wpdiblc1	Width dependence of PDIBLC1	None	0.0
Ppdiblc1	Cross-term dependence of PDIBLC1	None	0.0
Lpdiblc2	Length dependence of PDIBLC2	None	0.0
Wpdiblc2	Width dependence of PDIBLC2	None	0.0
Ppdiblc2	Cross-term dependence of PDIBLC2	None	0.0
Lpdiblcb	Length dependence of PDIBLCB	None	0.0
Wpdiblcb	Width dependence of PDIBLCB	None	0.0
Ppdiblcb	Cross-term dependence of PDIBLCB	None	0.0
Ldrout	Length dependence of DROUT	None	0.0
Wdrout	Width dependence of DROUT	None	0.0
Pdrout	Cross-term dependence of DROUT	None	0.0
Lpvag	Length dependence of PVAG	None	0.0
Wpvag	Width dependence of PVAG	None	0.0
Ppvag	Cross-term dependence of PVAG	None	0.0
Ldelta	Length dependence of DELTA	None	0.0
Wdelta	Width dependence of DELTA	None	0.0
Pdelta	Cross-term dependence of DELTA	None	0.0
Lalpha0	Length dependence of ALPHA0	None	0.0
Walpha0	Width dependence of ALPHA0	None	0.0
Palpha0	Cross-term dependence of ALPHA0	None	0.0
Lfbjtii	Length dependence of FBJTII	None	0.0
Wfbjtii	Width dependence of FBJTII	None	0.0
Pfbjtii	Cross-term dependence of FBJTII	None	0.0
Lbeta0	Length dependence of BETA0	None	0.0
Wbeta0	Width dependence of BETA0	None	0.0
Pbeta0	Cross-term dependence of BETA0	None	0.0
Lbeta1	Length dependence of BETA1	None	0.0
Wbeta1	Width dependence of BETA1	None	0.0
Pbeta1	Cross-term dependence of BETA1	None	0.0
Lbeta2	Length dependence of BETA2	None	0.0
Wbeta2	Width dependence of BETA2	None	0.0
Pbeta2	Cross-term dependence of BETA2	None	0.0
Lvdsatii0	Length dependence of VDSATII0	None	0.0
Wvdsatii0	Width dependence of VDSATII0	None	0.0
Pvdsatii0	Cross-term dependence of VDSATII0	None	0.0
Llii	Length dependence of LII	None	0.0
Wlii	Width dependence of LII	None	0.0
Plii	Cross-term dependence of LII	None	0.0
Lesatii	Length dependence of ESATII	None	0.0
Wesatii	Width dependence of ESATII	None	0.0
Pesatii	Cross-term dependence of ESATII	None	0.0
Lsii0	Length dependence of SII0	None	0.0
Wsii0	Width dependence of SII0	None	0.0
Psii0	Cross-term dependence of SII0	None	0.0
Lsii1	Length dependence of SII1	None	0.0
Wsii1	Width dependence of SII1	None	0.0
Psii1	Cross-term dependence of SII1	None	0.0
Lsii2	Length dependence of SII2	None	0.0
Wsii2	Width dependence of SII2	None	0.0
Psii2	Cross-term dependence of SII2	None	0.0
Lsiid	Length dependence of SIID	None	0.0
Wsiid	Width dependence of SIID	None	0.0
Psiid	Cross-term dependence of SIID	None	0.0
Lagidl	Length dependence of AGIDL	None	0.0
Wagidl	Width dependence of AGIDL	None	0.0
Pagidl	Cross-term dependence of AGIDL	None	0.0
Lbgidl	Length dependence of BGIDL	None	0.0
Wbgidl	Width dependence of BGIDL	None	0.0
Pbgidl	Cross-term dependence of BGIDL	None	0.0
Lngidl	Length dependence of NGIDL	None	0.0
Wngidl	Width dependence of NGIDL	None	0.0
Pngidl	Cross-term dependence of NGIDL	None	0.0
Lntun	Length dependence of Ntun	None	0.0
Wntun	Width dependence of Ntun	None	0.0
Pntun	Cross-term dependence of Ntun	None	0.0
Lndiode	Length dependence of Ndiode	None	0.0
Wndiode	Width dependence of Ndiode	None	0.0
Pndiode	Cross-term dependence of Ndiode	None	0.0
Lnrecf0	Length dependence of Nrecf0	None	0.0
Wnrecf0	Width dependence of Nrecf0	None	0.0
Pnrecf0	Cross-term dependence of Nrecf0	None	0.0
Lnrecr0	Length dependence of Nrecr0	None	0.0
Wnrecr0	Width dependence of Nrecr0	None	0.0
Pnrecr0	Cross-term dependence of Nrecr0	None	0.0
Lisbjt	Length dependence of Isbjt	None	0.0
Wisbjt	Width dependence of Isbjt	None	0.0
Pisbjt	Cross-term dependence of Isbjt	None	0.0
Lisdif	Length dependence of Isdif	None	0.0
Wisdif	Width dependence of Isdif	None	0.0
Pisdif	Cross-term dependence of Isdif	None	0.0
Lisrec	Length dependence of Isrec	None	0.0
Wisrec	Width dependence of Isrec	None	0.0
Pisrec	Cross-term dependence of Isrec	None	0.0
Listun	Length dependence of Istun	None	0.0
Wistun	Width dependence of Istun	None	0.0
Pistun	Cross-term dependence of Istun	None	0.0
Lvrec0	Length dependence of Vrec0	None	0.0
Wvrec0	Width dependence of Vrec0	None	0.0
Pvrec0	Cross-term dependence of Vrec0	None	0.0
Lvtun0	Length dependence of Vtun0	None	0.0
Wvtun0	Width dependence of Vtun0	None	0.0
Pvtun0	Cross-term dependence of Vtun0	None	0.0
Lnbjt	Length dependence of Nbjt	None	0.0
Wnbjt	Width dependence of Nbjt	None	0.0
Pnbjt	Cross-term dependence of Nbjt	None	0.0
Llbjt0	Length dependence of LBJT0	None	0.0
Wlbjt0	Width dependence of LBJT0	None	0.0
Plbjt0	Cross-term dependence of LBJT0	None	0.0
Lvabjt	Length dependence of Vabjt	None	0.0
Wvabjt	Width dependence of Vabjt	None	0.0
Pvabjt	Cross-term dependence of Vabjt	None	0.0
Laely	Length dependence of AELY	None	0.0
Waely	Width dependence of AELY	None	0.0
Paely	Cross-term dependence of AELY	None	0.0
Lahly	Length dependence of AHLY	None	0.0
Wahly	Width dependence of AHLY	None	0.0
Pahly	Cross-term dependence of AHLY	None	0.0
Lxj	Length dependence of XJ	None	0.0
Wxj	Width dependence of XJ	None	0.0
Pxj	Cross-term dependence of XJ	None	0.0
Lalphagb1	Length dependence of ALPHAGB1	None	0.0
Walphagb1	Width dependence of ALPHAGB1	None	0.0
Palphagb1	Cross-term dependence of ALPHAGB1	None	0.0
Lalphagb2	Length dependence of ALPHAGB2	None	0.0
Walphagb2	Width dependence of ALPHAGB2	None	0.0
Palphagb2	Cross-term dependence of ALPHAGB2	None	0.0
Lbetagb1	Length dependence of BETAGB1	None	0.0
Wbetagb1	Width dependence of BETAGB1	None	0.0
Pbetagb1	Cross-term dependence of BETAGB1	None	0.0
Lbetagb2	Length dependence of BETAGB2	None	0.0
Wbetagb2	Width dependence of BETAGB2	None	0.0
Pbetagb2	Cross-term dependence of BETAGB2	None	0.0
Lntrecf	Length dependence of Ntrecf	None	0.0
Wntrecf	Width dependence of Ntrecf	None	0.0
Pntrecf	Cross-term dependence of Ntrecf	None	0.0
Lntrecr	Length dependence of Ntrecr	None	0.0
Wntrecr	Width dependence of Ntrecr	None	0.0
Pntrecr	Cross-term dependence of Ntrecr	None	0.0
Lxbjt	Length dependence of XBJT	None	0.0
Wxbjt	Width dependence of XBJT	None	0.0
Pxbjt	Cross-term dependence of XBJT	None	0.0
Lxdif	Length dependence of XDIF	None	0.0
Wxdif	Width dependence of XDIF	None	0.0
Pxdif	Cross-term dependence of XDIF	None	0.0
Lxrec	Length dependence of XTUN	None	0.0
Wxrec	Width dependence of XTUN	None	0.0
Pxrec	Cross-term dependence of XTUN	None	0.0
Lcgdl	Length dependence of CGDL	None	0.0
Wcgdl	Width dependence of CGDL	None	0.0
Pcgdl	Cross-term dependence of CGDL	None	0.0
Lcgsl	Length dependence of CGSL	None	0.0
Wcgsl	Width dependence of CGSL	None	0.0
Pcgsl	Cross-term dependence of CGSL	None	0.0
Lckappa	Length dependence of CKAPPA	None	0.0
Wckappa	Width dependence of CKAPPA	None	0.0
Pckappa	Cross-term dependence of CKAPPA	None	0.0
Lute	Length dependence of UTE	None	0.0
Wute	Width dependence of UTE	None	0.0
Pute	Cross-term dependence of UTE	None	0.0
Lkt1	Length dependence of KT1	None	0.0
Wkt1	Width dependence of KT1	None	0.0
Pkt1	Cross-term dependence of KT1	None	0.0
Lkt2	Length dependence of KT2	None	0.0
Wkt2	Width dependence of KT2	None	0.0
Pkt2	Cross-term dependence of KT2	None	0.0
Lkt1l	Length dependence of KT1L	None	0.0
Wkt1l	Width dependence of KT1L	None	0.0
Pkt1l	Cross-term dependence of KT1L	None	0.0
Lua1	Length dependence of UA1	None	0.0
Wua1	Width dependence of UA1	None	0.0
Pua1	Cross-term dependence of UA1	None	0.0
Lub1	Length dependence of UB1	None	0.0
Wub1	Width dependence of UB1	None	0.0
Pub1	Cross-term dependence of UB1	None	0.0
Luc1	Length dependence of UC1	None	0.0
Wuc1	Width dependence of UC1	None	0.0
Puc1	Cross-term dependence of UC1	None	0.0
Lat	Length dependence of AT	None	0.0
Wat	Width dependence of AT	None	0.0
Pat	Cross-term dependence of AT	None	0.0
Lprt	Length dependence of PRT	None	0.0
Wprt	Width dependence of PRT	None	0.0
Pprt	Cross-term dependence of PRT	None	0.0
Lnigc	Length dependence of NIGC	None	0.0
Wnigc	Width dependence of NIGC	None	0.0
Pnigc	Cross-term dependence of NIGC	None	0.0
Laigc	Length dependence of AIGC	None	0.0
Waigc	Width dependence of AIGC	None	0.0
Paigc	Cross-term dependence of AIGC	None	0.0
Lbigc	Length dependence of B IGC	None	0.0
Wbigc	Width dependence of BIGC	None	0.0
Pbigc	Cross-term dependence of BIGC	None	0.0
Lcigc	Length dependence of CIGC	None	0.0
Wcigc	Width dependence of CIGC	None	0.0
Pcigc	Cross-term dependence of CIGC	None	0.0
Laigsd	Length dependence of AIGSD	None	0.0
Waigsd	Width dependence of AIGSD	None	0.0
Paigsd	Cross-term dependence of AIGSD	None	0.0
Lbigsd	Length dependence of BIGSD	None	0.0
Wbigsd	Width dependence of BIGSD	None	0.0
Pbigsd	Cross-term dependence of BIGSD	None	0.0
Lcigsd	Length dependence of CIGSD	None	0.0
Wcigsd	Width dependence of CIGSD	None	0.0
Pcigsd	Cross-term dependence of CIGSD	None	0.0
Lpigcd	Length dependence of PIGCD	None	0.0
Wpigcd	Width dependence of PIGCD	None	0.0
Ppigcd	Cross-term dependence of PIGCD	None	0.0
Lpoxedge	Length dependence of POXEDGE	None	0.0
Wpoxedge	Width dependence of POXEDGE	None	0.0
Ppoxedge	Cross-term dependence of POXEDGE	None	0.0
Lxrcrg1	Length dependence of XRCRG1	None	0.0
Wxrcrg1	Width dependence of XRCRG1	None	0.0
Pxrcrg1	Cross-term dependence of XRCRG1	None	0.0
Lxrcrg2	Length dependence of XRCRG2	None	0.0
Wxrcrg2	Width dependence of XRCRG2	None	0.0
Pxrcrg2	Cross-term dependence of XRCRG2	None	0.0
Lvsdfb	Length dependence of VSDFB	None	0.0
Wvsdfb	Width dependence of VSDFB	None	0.0
Pvsdfb	Cross-term dependence of VSDFB	None	0.0
Lvsdth	Length dependence of VSDTH	None	0.0
Wvsdth	Width dependence of VSDTH	None	0.0
Pvsdth	Cross-term dependence of VSDTH	None	0.0
Ldelvt	Length dependence of DELVT	None	0.0
Wdelvt	Width dependence of DELVT	None	0.0
Pdelvt	Cross-term dependence of DELVT	None	0.0
Lacde	Length dependence of ACDE	None	0.0
Wacde	Width dependence of ACDE	None	0.0
Pacde	Cross-term dependence of ACDE	None	0.0
Lmoin	Length dependence of MOIN	None	0.0
Wmoin	Width dependence of MOIN	None	0.0
Pmoin	Cross-term dependence of MOIN	None	0.0
Lnoff	Length dependence of Noff	None	0.0
Wnoff	Width dependence of Noff	None	0.0
Pnoff	Cross-term dependence of Noff	None	0.0

BSIM3-SOI MOSFET Model Netlist Example

.MODEL mossoi1 NMOS LEVEL=57

+Tnom=27.0 capmod=3 mobmod=1

+Nch=1e+16 Tox=5E-08 Xj=3.85E-08

+Lint=9.36e-8 Wint=0

+Vth0= .779 K1=1.04 K2= -3.83e-2 K3=50

+Dvt0= 2.812 Dvt1= 0.462 Dvt2=-9.17e-2

+Nlx= 3.52291E-08 W0= 1.163e-6

+K3b= 2.233

+Vsat= 86301.58 Ua= 6.47e-9 Ub= 4.23e-18 Uc=-4.706281E-11

+U0=400 wr=1

+A0= .3496967 Ags=.1 B0=0.546 B1= 1

+ Dwg = -6.0E-09 Dwb = -3.56E-09 Prwb = -.213

+Keta=-3.605872E-02 A1= 2.778747E-02 A2= .9

+Voff=-6.735529E-02 NFactor= 1.139926 Cit= 1.622527E-04

+cj=0.00042 mj=0.5 pb=1.0

+cjsw=9e-12 mjsw=0.33 pbsw=1.0

+cjswg=9e-12 mjswg=0.33 pbswg=1.0

+cgsl=5.0e-10 ckappa=0.6

+cgdl=3.6e-10

+cf=0.0 cgso=5.2e-10 cgdo=5.2e-10

+cgbo=4.0e-10

+Cdsc=2.4e-4

+Cdscb= 0 Dvt0w = 0 Dvt1w = 0 Dvt2w = 0

+Cdscd = 0 Prwg = 0

+dlc=9.36e-8 dwc=0.0

+Eta0= 1.0281729E-02 Etab=-5.042203E-03

+Dsub= .31871233

+Pclm= 1.114846 Pdiblc1= 2.45357E-03 Pdiblc2= 6.406289E-03

+Drout= .31871233 Pscbe1= 5000000 Pscbe2= 5E-09

+Pdiblcb = -.234

+Pvag= 0 delta=0.01

+Wl = 0 Ww =0 Wwl = 0

+Wln = 0 Wwn = .2613948 Ll =0.0

+Lw = 0 Lwl = 0 Lln = .316394

+Lwn = 0

+kt1=-.3 kt2=-.051

+At= 22400

+Ute=-1.48

+Ua1= 3.31E-10 Ub1= 2.61E-19 Uc1= -3.42e-10

+Kt1l=0 Prt=764.3

+xpart=0.2

+JS =1e-2 JSW=0

+VFBCV=-1 VFB=-1

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