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Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 55 through 99 >
   EPFL-EKV MOSFET Model, Level 55       

EPFL-EKV MOSFET Model, Level 55

The syntax for a Level 55 MOSFET model is:

.MODEL modelname NMOS LEVEL=55 [(][parameter=val] ... [)]

or

.MODEL modelname PMOS LEVEL=55 [(][parameter=val] ... [)]

modelname is the name used by MOSFET instances to refer to this .MODEL statement. The LEVEL=55 entry selects the EPFL-EKV MOSFET model.

 


Level 55 MOSFET Intrinsic Basic, Optional, and Process-Related Model Parameters

Model Parameter

Description

Unit

Default

LEVEL

55 is required to select the EPFL-EKV MOSFET model

None

1 (default if LEVEL parameter is omitted)

COX

Gate oxide capacitance per unit area

Farad/Meter2

7.0e-4

DL (XL)

Channel shortening

Meter

0.0

DW (XW, WDEL)

Channel narrowing

Meter

0.0

EKVINT

Interpolation function selector

None

0.0

E0 (EO)

Vertical critical field

Volt/Meter

1.0e+12

GAMMA

Body effect parameter

Volt½

1.0

GEO

Layout geometry

0 = Drain and source not shared
1 = Drain shared
2 = Source shared
3 = Drain and source shared

None

0

KP

Transconductance parameter

Amp/Volt2

5.0e-5

PHI

Bulk Fermi potential

Volt

0.7

SCALM

Scale factor for model parameters

None

1.0

THETA

Mobility reduction coefficient (Used only when E0 not specified)

Volt-1

0.0

TNOM

Nominal device temperature

°C

25

TT

Transit time

Second

0.0

UCRIT

Longitudinal critical field

Volt/Meter

100.0e+6

UPDATE

Update parameter

None

0.0

VTO (VT0)

Threshold voltage at VBS = 0.

Volt

NMOS: 0.5

PMOS: -0.5

XJ

Junction depth

Meter

1.0e-7


 

 


Level 55 MOSFET Channel Length Modulation and Charge Sharing Model Parameters

Model Parameter

Description

Unit

Default

LAMBDA

Depletion length coefficient

None

0.5

LETA

Short-channel effect coefficient

None

0.1

WETA

Narrow-channel effect coefficient

None

0.25


 


Level 55 MOSFET Reverse Short-Channel Effect Model Parameters

Model Parameter

Description

Unit

Default

LK

Reverse short-channel effect peak characteristic length

Meter

2.9e-7

Q0

Reverse short-channel effect peak charge density

Amp-sec/Meter2

0.0


 

 


Level 55 MOSFET Impact Ionization Effect Model Parameters

Model Parameter

Description

Unit

Default

IBA

1st impact ionization coefficient

Meter-1

0.0

IBB

2nd impact ionization coefficient

Volt-Meter-1

3.0e+8

IBN

Saturation voltage factor for impact ionization

None

1.0


 


Level 55 MOSFET Temperature Model Parameters

Model Parameter

Description

Unit

Default

BEX

Surface channel mobility temperature exponent

None

-1.5

IBBT

Temperature coefficient for IBB

°K-1

9.0e-4

TCV

Threshold voltage temperature coefficient

Volt/°K

1.0e-3

TR1

1st-order temperature coefficient

°K-1

0.0

TR2

2nd-order temperature coefficient

°K-2

0.0

UCEX

Longitudinal critical field temperature exponent

None

0.8


 

 


Level 55 MOSFET Flicker Noise Model Parameters

Model Parameter

Description

Unit

Default

AF

Flicker noise exponent

None

1.0

KF

Flicker noise coefficient

None

0.0


 


Level 55 MOSFET Setup Model Parameters

Model Parameter

Description

Unit

Default

NQS

Non-Quasi-Static (NQS) operation selector

None

0.0

SATLIM

Ratio defining the saturation limit

None

e4 [exp(4)]


 


Level 55 MOSFET Junction Model Parameters

Model Parameter

Description

Unit

Default

ACM

Area calculation method selector

None

0

CBS (CAPBS)

Bulk-drain overlap capacitance

Farad

0.0

CBD (CAPBD)

Bulk-source overlap capacitance

Farad

0.0

CJ

Zero bias bulk junction bottom capacitance per sq meter of junction area

Farad/Meter2

0.0

CJGATE

Zero-bias bulk junction sidewall capacitance

Farad/Meter

CJSW

CJSW

Zero-bias bulk junction sidewall capacitance per meter of junction perimeter

Farad/Meter

0.0

FC

Forward-bias capacitance depletion coefficient

None

0.5

HDIF

Length of heavily-doped diffusion region from contact to lightly-doped region

Meter

0.0

LD (DLAT, LATD)

Lateral diffusion into channel from source and drain diffusion

Meter

Calculated

LDIF

Length of lightly-doped diffusion near gate

Meter

0.0

IS

Bulk junction saturation current

Amp

1.0e-14

JS

Bulk junction saturation current density

Amp/Meter2

0.0

JSW

Bulk junction sidewall saturation current

Amp/Meter

0.0

MJ

Bulk junction bottom grading coefficient

None

0.5

MJSW

Bulk junction sidewall grading coefficient

None

0.33

N

Emission coefficient

None

1.0

PB

Bulk junction contact potential

Volt

0.8

PBSW

Bulk junction sidewall contact potential

Volt

0.8

WMLT

Diffusion layer width reduction factor

None

1.0

XTI

Junction current temperature coefficient

None

3.0


 


Level 55 MOSFET Resistance and Capacitance Model Parameters

Model Parameter

Description

Unit

Default

CGBO

Gate-bulk overlap capacitance per meter channel length

Farad/Meter

0.0

CGDO

Gate-drain overlap capacitance per meter channel width

Farad/Meter

0.0

CGSO

Gate-source overlap capacitance per meter channel width

Farad/Meter

0.0

RD

Drain resistance

Ohm

0.0

RDC

Drain contact resistance for per-finger device

Ohm

0.0

RS

Source resistance

Ohm

0.0

RSC

Source contact resistance for per-finger device

Ohm

0.0

RSH

Source/drain sheet resistance per square.

Ohm/square

0.0


EPFL-EKV MOSFET Model Netlist Example

.MODEL epflekvmosfet LEVEL=55

+ COX=3.45E-3 XJ=0.15E-6 VTO=0.7 GAMMA=0.7 PHI=0.5

+ KP=150E-6 E0=200E+6 UCRIT=2.3E+6 LAMBDA=0.8

+ LETA=0.3 WETA=0.2 Q0=230E-6 LK=0.4E-6

+ IBA=2.0E+8 IBB=2.0E+8 IBN=0.6




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