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Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 55 through 99 >
   MOSFET Instance, EPFL-EKV Model (Level 55)       

MOSFET Instance, EPFL-EKV Model (Level 55)

 

EPFL-EKV MOSFET Instance Netlist Syntax

The syntax for a Level 55 EPFL-EKV v2.6, R 11 MOSFET instance is:

Mxxxx nd ng ns [nb] modelname [[L=]length] [[W=]width]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val] [VDSAT=val]

[M=val] [SCALE=val] [TEMP=val]

nd is the drain node, ng is the gate node, ns is the source node, and nb is the bulk or substrate node of the MOSFET. modelname is the name of a Level 55 MOSFET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val] [VDSAT=val]

[M=val] [SCALE=val] [TEMP=val]

 

 


Level 55 MOSFET Instance Parameters

Instance Parameter

Description

Unit

Default

AD

Drain diffusion area

Meter2

0.0

AS

Source diffusion area

Meter2

0.0

L

MOSFET channel length

Meter

2.0e-6

M

Multiplier: simulates parallel transistors

None

1.0

NRD

Number of squares of drain diffusion for resistance calculations

None

1.0

NRS

Number of squares of source diffusion for resistance calculations

None

1.0

PD

Drain diffusion periphery

Meter

0.0

PS

Source diffusion periphery

Meter

0.0

SCALE

Scale factor for instance parameters

None

1.0

TEMP

Device temperature

°C

Circuit temperature

VDSAT

Saturation drift velocity

Meter/sec

0.0

W

MOSFET channel width

Meter

10.0e-6


EPFL-EKV MOSFET Instance Netlist Example

M245 11 12 13 14 epsmodel55 L=1.845e-6 W=9.216e-6




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