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MOSFET Levels 49 through 54 >
   Philips MOS9 Geometrical MOSFET Model (Level 50)       

Philips MOS9 Geometrical MOSFET Model (Level 50)

Philips MOS903 MOSFET Model Netlist Syntax

The syntax for a Level 50 Philips MOS9 Geometrical MOSFET model is:

.MODEL modelname NMOS LEVEL=50 [parameter=val] ...

or

.MODEL modelname PMOS LEVEL=50 [parameter=val] ...

modelname is the name used by MOSFET instances to refer to this .MODEL statement. The LEVEL=50 entry selects the Philips MOS903 MOSFET model.

 


Level 50 MOSFET Model Parameters

Model Parameter

Description

Unit

Default

LEVEL

50 is required to select the Philips MOS9 MOSFET model

None

1 (default if LEVEL parameter is omitted)

VERSION

903 selects the Philips MOSFET 903 Model

None

903

A1R

Weak-avalanche current factor for the reference transistor at the reference temperature

None

NMOS: 6.0

PMOS: 10.0

A2R

Weak-avalanche current exponent for the reference transistor

Volt

NMOS: 38.0

PMOS: 59.0

A3R

Factor of drain-source voltage above which above which weak-avalanche occurs, for the reference transistor

None

NMOS: 0.65

PMOS: 0.52

ALPR

Channel length modulation factor for the reference transistor

None

NMOS: 0.003

PMOS: 0.044

BETSQ

Gain factor of infinite square transistor at the reference temperature

Amp/Volt2

NMOS: 83.0e-6

PMOS: 26.1e-6

COL

Gate overlap capacitance per unit channel width

Farad/Meter

0.320e-9

ETAALP

Exponent of length dependence of a

None

NMOS: 0.15

PMOS: 0.17

ETABET

Exponent of the temperature dependence of the gain factor

None

1.6

ETADSR

Exponent of the VDS dependence of g1 for the reference transistor

None

0.6

ETAGAMR

Exponent of back-bias dependence of g0 for the reference transistor

None

NMOS: 2.0

PMOS: 1.0

ETAMR

Exponent of back-bias dependence of M for the reference transistor

None

NMOS: 2.0

PMOS: 1.0

ETAZET

Exponent of length dependence of z1

None

NMOS: 0.17

PMOS: 0.03

FBET1

Relative mobility decrease due to first profile

None

0.0

FBET2

Relative mobility decrease due to second profile

None

0.0

FTHE1

Coefficient describing the width dependence of Q1 for W < WDOG

None

0.0

GAM1R

Drain-induced threshold shift for high gate drive

None

NMOS: 0.145

PMOS: 0.077

GAMOOR

Drain-induced threshold shift coefficient for large gate drive for the reference transistor

Volt**(1-hDS)

NMOS: 0.018

PMOS: 0.007

GTHE1

Selector for Q1 scaling rule

0 = old, 1=new

None

0.0

KOR

Low-back-bias body factor for the reference transistor

Volt½

NMOS: 0.65

PMOS: 0.470

KR

High-back-bias body factor for the reference transistor

Volt½

NMOS: 0.11

PMOS: 0.470

LAP

Effective channel length reduction per side due to the lateral diffusion of the source/drain dopant ions

Meter

NMOS: 0.100e-6

PMOS: 0.025e-6

LER

Effective channel length of the reference transistor

Meter

NMOS: 1.1e-6

PMOS: 1.25e-6

LP1

Characteristic length of first profile

Meter

1.0e-6

LP2

Characteristic length of second profile

Meter

1.0e-8

LVAR

Difference between the actual and the programmed polysilicon gate length

Meter

NMOS: -0.22e-6

PMOS: -0.460e-6

MOR

Subthreshold slope factor for the reference transistor at the reference temperature

None

NMOS: 0.5

PMOS: 0.375

NFAR

1st flicker noise coefficient of the reference transistor (NFMOD=1)

1/Volt-Meter4

NMOS: 7.15e+22

PMOS: 1.53e+22

NFBR

2nd flicker noise coefficient of the reference transistor (NFMOD=1)

1/Volt-Meter2

NMOS: 2.16e+7

PMOS: 4.06e+6

NFCR

3rd flicker noise coefficient of the reference transistor (NFMOD=1)

1/Volt

NMOS: 0.0

PMOS: 2.92e-10

NFMOD

Flicker noise switch

0 selects old flicker noise model

1 selects new flicker noise model

None

0.0

NFR

Flicker noise coefficient of the reference transistor (NFMOD=0)

Volt2

NMOS: 0.7e-10

PMOS: 0.214e-10

NTR

Thermal noise coefficient for the reference transistor

Joule

NMOS: 0.244e-19

PMOS: 0.211e-19

PHIBR

Strong inversion surface potential for the reference transistor at the reference temperature

Volt

0.65

SL2GAMOO

2nd coefficient of the length dependence of g00

None

0.0

SL2K

2nd coefficient of the length dependence of K

Volt½-Meter2

0.0

SL2KO

2nd coefficient of the length dependence of K0

Volt½-Meter2

0.0

SL2VTO

2nd length coefficient of the dependence of VTO

Volt-Meter2

0.0

SL3VTO

3rd coefficient of the length dependence of VTO

Volt

0.0

SLA1

Length coefficient of the dependence of a1

Meter

NMOS: 1.3e-6

PMOS: -15.0e-6

SLA2

Length coefficient of the dependence of a2

Volt-Meter

NMOS: 1.0e-6

PMOS: -8.0e-6

SLA3

Length coefficient of the dependence of a3

Meter

NMOS: -0.550e-6

PMOS: -0.450e-6

SLALP

Coefficient of length dependence of a

Meter**(ha)

NMOS: -5.65e-3

PMOS: 9.0e-3

SLGAM1

Coefficient of the length dependence of g1

None

NMOS: 0.160e-6

PMOS: 0.105e-6

SLGAMOO

Coefficient of the length dependence of g00

Meter2

NMOS: 20.0e-15

PMOS: 11.0e-15

SLK

Coefficient of the length dependence of K

Volt½-Meter

NMOS: -0.280e-6

PMOS: -0.200e-6

SLKO

Coefficient of the length dependence of K0

Volt½-Meter

NMOS: -0.130e-6

PMOS: -0.200e-6

SLMO

Coefficient of the length dependence of M0

Meter½

NMOS: 0.280e-3

PMOS: 0.047e-3

SLTHE1R

Coefficient of the length dependence of Q1 at the reference temperature

Meter/Volt

NMOS: 0.140e-6

PMOS: 0.070e-6

SLTHE2R

Coefficient of the length dependence of Q2 at the reference temperature

Meter/Volt½

NMOS: -0.033e-6

PMOS: -0.075e-6

SLTHE3R

Coefficient of the length dependence of Q3 at the reference temperature

Meter/Volt

NMOS: 0.185e-6

PMOS: 0.027e-6

SLVSBT

Coefficient of the length dependence of VSBT

Volt-Meter

NMOS: -4.43e-6
PMOS: 0.0

SLVSBX

Coefficient of the length dependence of VSBX

Volt-Meter

0.0

SLVTO

Coefficient of the length dependence of VTO

Volt-Meter

NMOS: -0.135e-6

PMOS: 0.035e-6

SLZET1

Coefficient of the length dependence of z1

Meter**(hz)

NMOS: -0.39

PMOS: -2.8

STA1

Coefficient of the temperature dependence of a1

°K-1

0.0

STLTHE1

Coefficient of the temperature dependence of the length dependence of Q1

Meter/Volt-°K

0.0

STLTHE2

Coefficient of the temperature dependence of the length dependence of Q2

Meter/Volt½-°K

0.0

STLTHE3

Coefficient of the temperature dependence of the length dependence of Q3

Meter/Volt-°K

NMOS: -0.62e-9

PMOS: 0.0

STMO

Coefficient of the temperature dependence coefficient of M0

°K-1

0.0

STTHE1R

Coefficient of the temperature dependence of Q1 for the reference transistor

1/Volt-°K

0.0

STTHE2R

Coefficient of the temperature dependence of Q2 for the reference transistor

1/Volt½-°K

0.0

STTHE3R

Coefficient of the temperature dependence of Q3 for the reference transistor

1/Volt-°K

NMOS: -0.66e-3

PMOS: 0.0

STVTO

Coefficient of the temperature dependence of VTO

Volt/°K

NMOS: -1.2e-3

PMOS: -1.7e-3

SWA1

Coefficient of the width dependence of a1

Meter

NMOS: 3.0e-6

PMOS: 30.0e-6

SWA2

Coefficient of the width dependence of a2

Volt-Meter

NMOS: 2.0e-6

PMOS: 15.0e-6

SWA3

Coefficient of the width dependence of a3

Meter

NMOS: 0.0

PMOS: -0.140e-6

SWALP

Coefficient of the width dependence of a

Meter

NMOS: 1.67e-9

PMOS: 0.180e-9

SWGAM1

Coefficient of the width dependence of g1

Volt**(1-hDS)-Meter

NMOS: -0.010e-6

PMOS: -0.011e-6

SWK

Coefficient of the width dependence of K

Volt½-Meter

NMOS: 0.275e-6

PMOS: 0.115e-6

SWKO

Coefficient of the width dependence of KO

Volt½-Meter

NMOS: 0.002e-6

PMOS: 0.115e-6

SWTHE1

Coefficient of the width dependence of Q1

Meter/Volt

NMOS: -0.058e-6

PMOS: -0.080e-6

SWTHE2

Coefficient of the width dependence of Q2

Meter/Volt½

NMOS: 0.030e-6

PMOS: 0.020e-6

SWTHE3

Coefficient of the width dependence of Q3

Meter/Volt

NMOS: 0.020e-6

PMOS: 0.011e-6

SWVSBX

Coefficient of the width dependence of VSBX

Volt-Meter

NMOS: -0.675e-6

PMOS: 0.0

SWVTO

Coefficient of the width dependence of VTO

Volt-Meter

NMOS: 0.130e-6

PMOS: 0.050e-6

TH3MOD

Switch that activates Q3 clipping

None

1

THE1R

Coefficient of the mobility reduction due to the gate-induced field for the reference transistor at the reference temperature

Volt-1

0.190

THE2R

Coefficient of the mobility reduction due to the back-bias for the reference transistor at the reference temperature

Volt½

NMOS: 0.012

PMOS: 0.165

THE3R

Coefficient of the mobility reduction due to the lateral field for the reference transistor at the reference temperature

Volt-1

NMOS: 0.145

PMOS: 0.027

TOX

Gate oxide layer thickness

Meter

25.0e-9

TR

Temperature at which the parameters for the reference transistor have been determined

°C

21.0

VPR

Characteristic voltage of the channel length modulation for the reference transistor

Volt

NMOS: 0.34

PMOS: 0.235

VSBTR

Limiting voltage of the VSB dependence of M and g0

Volt

NMOS: 2.1

PMOS: 100.0

VSBXR

Transition voltage for dual-k-factor model for the reference transistor

Volt

NMOS: 0.66

PMOS: 1.0e-12

VTOR

Threshold voltage at zero back-bias for the reference transistor at the reference temperature

Volt

NMOS: 0.73

PMOS: 1.1

WDOG

Characteristic drawn gate width below which dogboning appears

Meter

0.0

WER

Effective channel width of the reference transistor

Meter

NMOS: 20.0e-6

PMOS: 20.0e-6

WOT

Effective reduction of the channel width per side due to the lateral diffusion of the channel-stop dopant ion

Meter

0.0

WVAR

Difference between the actual and the programmed field-oxide opening

Meter

NMOS: -0.025e-6

PMOS: -0.130e-6

ZET1R

Weak-inversion correction factor for the reference transistor

None

NMOS: 0.42

PMOS: 1.3


 

 

Philips MOS903 MOSFET Geometrical Model Netlist Example

.model _MNXMI7 nmos level=50 LER=1.92e-007 WER=1.00028e-005

+ LVAR=-1.5e-008 LAP=2.15e-008 WVAR=5e-008 WOT=2.36e-008 TR=27

+ VTOR=0.557867 STVTO=0 SLVTO=0 SL2VTO=0 SWVTO=0

+ KOR=0.400564 SLKO=0 SWKO=0 KR=0.140908 SLK=0 SWK=0

+ PHIBR=0.65 VSBXR=0.69554 SLVSBX=0 SWVSBX=0

+ BETSQ=0.000238156 ETABET=0 THE1R=0.678252 STTHE1R=0

+ WDOG=5e-007 SLTHE1R=0 STLTHE1=0 SWTHE1=0 THE2R=0.0135513

+ STTHE2R=0 SLTHE2R=0 STLTHE2=0 SWTHE2=0 THE3R=0.539003

+ STTHE3R=0 SLTHE3R=0 STLTHE3=0 SWTHE3=0 GAM1R=0.100434

+ SLGAM1=0 SWGAM1=0 ETADSR=0.6 ALPR=0.0108148 ETAALP=0

+ SLALP=0 SWALP=0 VPR=0.164 GAMOOR=0.03667 SLGAMOO=0

+ ETAGAMR=1 MOR=0.3763 STMO=0 SLMO=0 ETAMR=1 ZET1R=1.25

+ ETAZET=0.5 SLZET1=0 VSBTR=56.66 SLVSBT=0 A1R=39.7305 STA1=0

+ SLA1=0 SWA1=0 A2R=20.6076 SLA2=0 SWA2=0 A3R=0.635236 SLA3=0

+ SWA3=0 TOX=6e-009 COL=4.23e-010 NTR=2.2148e-020

+ NFR=3.215e-011 NFMOD=0 NFAR=2.8e+024 NFBR=2.36e+008 NFCR=0

 




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