淘宝官方店     推荐课程     在线工具     联系方式     关于我们  
 
 

微波射频仿真设计   Ansoft Designer 中文培训教程   |   HFSS视频培训教程套装

 

Agilent ADS 视频培训教程   |   CST微波工作室视频教程   |   AWR Microwave Office

          首页 >> Ansoft Designer >> Ansoft Designer在线帮助文档


Ansoft Designer / Ansys Designer 在线帮助文档:


Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 49 through 54 >
   MOSFET Instance, Philips MOS903 Geometrical Model (Level 50)       

MOSFET Instance, Philips MOS903 Geometrical Model (Level 50)

 

Philips MOS903 Geometrical MOSFET Instance Netlist Syntax

The syntax for a Level 50 Philips MOS903 MOSFET instance is:

Mxxxx nd ng ns [nb] modelname [L=length] [W=width]

[DTEMP=val] [DTA=val] [MULT=val]

nd is the drain node, ng is the gate node, ns is the source node, and nb is the bulk or substrate node of the MOSFET. modelname is the name of a Level 50 MOSFET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

[DTEMP=val] [DTA=val] [MULT=val]

 


Level 50 MOSFET Instance Parameters

Instance Parameter

Description

Unit

Default

DTA

Temperature offset of the device with respect to TA

°C

0.0

DTEMP

Difference between circuit and MOSFET temperature

°C

0.0

L

Drawn channel length in the layout of the actual transistor

Meter

1.5e-6

MULT

Number of devices in parallel

None

1.0

W

Drawn channel width in the layout of the actual transistor

Meter

20.0e-6


 

Philips MOS903 MOSFET Instance Netlist Example

M17 5 3 0 0 MNXM17 L=2.5E-007 W=1E-006




HFSS视频教学培训教程 ADS2011视频培训教程 CST微波工作室教程 Ansoft Designer 教程

                HFSS视频教程                                      ADS视频教程                               CST视频教程                           Ansoft Designer 中文教程


 

      Copyright © 2006 - 2013   微波EDA网, All Rights Reserved    业务联系:mweda@163.com