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Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 49 through 54 >
   MOSFET Instance, BSIM3v3 Models (Level 49 or 53)       

MOSFET Instance, BSIM3v3 Models (Level 49 or 53)

 

BSIM3v3 MOSFET Instance Netlist Syntax

The syntax for an Ansoft Enhanced BSIM3v3 (HSPICEÔ Level 49) or Berkeley standard BSIM3v3 (HSPICEÔ Level 53) MOSFET instance is:

Mxxxx nd ng ns [nb] modelname [[L=]length] [[W=]width]

[AD=val] [AS=val] [PD=val] [PS=val] [NRD=val] [NRS=val]

[MULU0=val] [MULUA=val] [MULUB=val]

[M=val] [DELVTO=val] [DTEMP=val] [SCALE=val]

nd is the drain node, ng is the gate node, ns is the source node, and nb is the bulk or substrate node of the MOSFET. modelname is the name of a Level 49 or 53 MOSFET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

[AD=val] [AS=val] [PD=val] [PS=val] [NRD=val] [NRS=val]

[MULU0=val] [MULUA=val] [MULUB=val]

[M=val] [DELVTO=val] [DTEMP=val] [SCALE=val]

 

 


Level 49/53 MOSFET Instance Parameters

Instance Parameter

Description

Unit

Default

AD

Drain area

Meter2

0.0

AS

Source area

Meter2

0.0

DELVTO

Shift in zero-bias threshold voltage vth0. Value must be a real scalar

Volt

0.0

DTEMP

Temperature difference between circuit and device

°C

0.0

L

Physical gate length

Meter

10.0e-6

M

Multiplier to simulate transistors in parallel

None

1.0

MULU0

Low-field mobility multiplier

None

1.0

MULUA

First-order mobility multiplier

None

1.0

MULUB

Second-order mobility multiplier

None

1.0

NRD

Relative resistivity of drain

Square

0.0

NRS

Relative resistivity of source

Square

0.0

PD

Drain perimeter

Meter

0.0

PS

Source perimeter

Meter

0.0

SA

Distance between OD edge to poly from one side

Meter

0.0

SB

Distance between OD edge to poly from the other side

Meter

0.0

SCALE

Scale factor for instance parameters

None

1.0 (or global SCALE option)

W

Physical gate width

Meter

100.0e-6


 

BSIM3v3 MOSFET Instance Netlist Example

M1 10 11 12 mosfet1

M12 G3 VDD 0 0 mosfet2 M=2

Mtest 34 56 78 90 fetex

BSIM3v3 Output Quantities

The BSIM3v3 instance can output the quantities listed in the table below. The output quantities are the values of model parameters and the values of variables that are calculated internally to the model.

In the Schematic Editor, you request Nexxim to create these outputs with the Output Quantities selection on the Solution Setup dialogs.

In a netlist, you request Nexxim to create these outputs with the following statement:

.PRINT O(instance_name)

Where instance_name identifies the device instance in the netlist, shown as Mxxxx in the netlist syntax.

 


BSIM3v3 Output Quantities

Output Code

Parameter or Variable

Description

Unit

LV1

L

Effective length

Meter

LV2

W

Effective width

Meter

LV3

AD

Effective drain area

Meter2

LV4

AS

Effective source area

Meter2

LV9

VTH

Threshold voltage

Volt

LV10

VDSAT

Saturation voltage

Volt

LV11

PD

Drain diode perimeter

Meter

LV12

PS

Source diode perimeter

Meter

LV13

RDS

Drain resistance

Square

LV14

RSS

Source resistance

Square

LV15

XQC

Charge-sharing coefficient

None

LV16

GDEFF

Effective drain conductance for RGEOMOD!=0

Mho

LV17

GSEFF

Effective source conductance for RGEOMOD!=0

Mho

LV18

CDSAT

Drain-bulk saturation current at -1V

Amp

LV19

CSSAT

Drain-source saturation current at -1V

Amp

LV20

VDBEFF

Effective drain-bulk voltage

Volt

LV21

BETAEFF

BETA effective

Volt

LV22

GAMMAEFF

GAMMA effective

Volt0.5

LV24

UBEFF

UB effective

(Meter/Volt)0.5

LV26

VFBEFF

VFB effective

Volt

LX1

VBS

Bulk-source voltage

Volt

LX2

VGS

Gate-source voltage

Volt

LX3

VDS

Drain-source voltage

Volt

LX4

CDO

DC drain current

Amp

LX5

CBSO

DC source-bulk diode current

Amp

LX6

CBDO

DC drain-bulk diode current

Amp

LX7

GMO

DC gate transconductance

Mho

LX8

GDSO

DC drain-source transconductance

Mho

LX9

GMBSO

DC substrate transconductance

Mho

LX10

GBDO

Conductance of the drain diode

Mho

LX11

GBSO

Conductance of the source diode

Mho

LX12

QB

Total bulk charge

Coulomb

LX13

CQB

Total bulk charge current

Amp

LX14

QG

Total gate charge

Coulomb

LX15

CQG

Total gate charge current

Amp

LX16

QD

Total drain charge

Coulomb

LX17

CQD

Total drain charge current

Amp

LX18

CGGBO

Intrinsic gate capacitance
(CGS + CGD + CGB)

Farad

LX19

CGDBO

Intrinsic gate-to-drain capacitance
(-dqg_dvd)

Farad

LX20

CGSBO

Intrinsic gate-to-source capacitance
(-dqg_dvs)

Farad

LX21

CBGBO

Intrinsic bulk-to-gate capacitance
(-dqb_dvg)

Farad

LX22

CBDBO

Intrinsic bulk-to-drain capacitance
(-dqb_dvd)

Farad

LX23

CBSBO

Intrinsic bulk-to-source capacitance
(-dqb_dvs)

Farad

LX24

QBD

Drain-bulk charge

Coulomb

LX26

QBS

Source-bulk charge

Coulomb

LX28

CAP_BS

Bias-dependent bulk-source capacitance

Farad

LX29

CAP_BD

Bias-dependent bulk-drain capacitance

Farad

LX32

CDGBO

Intrinsic gate-to-drain capacitance
(-dqd_dvg)

Farad

LX33

CDDBO

Intrinsic drain capacitance
(-dqd_dvd)

Farad

LX34

CDSBO

Intrinsic drain-to-source capacitance
(-dqd_dvs)

Farad

LX55

QSRCO

Total charge (QG + QB + QD)

Coulomb

LX97

QGI

Intrinsic gate charge

Coulomb

LX98

QSI

Intrinsic source charge

Coulomb

LX99

QDI

Intrinsic drain charge

Coulomb

LX100

QBI

Intrinsic bulk charge

Coulomb

LX101

CDDBI

Intrinsic drain capacitance

Farad

LX102

CBDBI

Intrinsic bulk-to-drain capacitance

Farad

LX103

CBSBI

Intrinsic bulk-to-source capacitance

Farad





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