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MOSFET Instance, SPICE 2G Empirical Model (Level 3)

MOSFET Instance, SPICE 2G Empirical Model (Level 3)

SPICE 2G Empirical MOSFET Instance Netlist Syntax

The syntax for a Level 3 IDS Empirical MOSFET instance is:

Mxxxx nd ng ns [nb] modelname [[L=]length] [[W=]width]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val] [DTEMP=val]

[M=val] [TEMP=val] [SCALE=val] [ASPEC=val]

nd is the drain node, ng is the gate node, ns is the source node, and nb is the bulk or substrate node of the MOSFET. modelname is the name of a Level 3 MOSFET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val] [DTEMP=val]

[M=val] [TEMP=val] [SCALE=val] [ASPEC=val]

**Level 3 MOSFET Instance Parameters**
Instance Parameter	Description	Unit	Default
AD	Drain diffusion area	Meter²	0.0
AS	Source diffusion area	Meter²	0.0
ASPEC	ASPEC option	None	0.0
DTEMP	Difference between MOSFET and circuit temperatures	°C	0.0
L	Channel length	Meter	1.0e-4
M	Multiplier to simulate multiple transistors in parallel	None	1.0
NRD	Number of squares of drain diffusion	Square	0.0
NRS	Number of squares of source diffusion	Square	0.0
PD	Drain diffusion periphery	Meter	0.0
PS	Source diffusion periphery	Meter	0.0
SCALE	Scale factor for instance parameters	None	1.0
TEMP	Device temperature	°C	Calculated
W	Channel width	Meter	1.0e-4

SPICE 2G Empirical MOSFET Instance Netlist Example

M1 10 11 12 mosfet1

M12 G3 VDD 0 0 mosfet2 M=2 L=1.5e-4 W=2e-4

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