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 Ansoft Designer / Ansys Designer 在线帮助文档：
Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 1 through 27 >
IDS Grove-Frohman MOSFET Model, Level 2
IDS Grove-Frohman MOSFET Model, Level 2
The netlist syntax for a Level
2 MOSFET model is:
.MODEL modelname NMOS LEVEL=2
[(][parameter=val] ... [)]
or
.MODEL modelname PMOS LEVEL=2
[(][parameter=val] ... [)]
modelname is
the name used by MOSFET instances to refer to this .MODEL statement.
The LEVEL=2 entry selects the
IDS Grove-Frohman MOSFET model.
Level 2 MOSFET Basic Model
Parameters
Model Parameter
|
Description
|
Unit
|
Default
|
LEVEL
|
2 is required to select the IDS
Grove-Frohman model
|
None
|
1 (default if LEVEL parameter is
omitted)
|
ACM
|
Area calculation method selector
0 = SPICE model, parameters depend on element areas
1 = ASPEC model, parameters depend on element width
2 = HSPICE model (combines ACM 0 and 1, extensions
for lightly-doped drain technology
3 = HSPICE method, ACM 2 plus shared sources and
drains and gate-edge source/drain peripheral capacitances
|
None
|
0
|
ALPHA
|
Impact ionization current coefficient
|
None
|
0.0
|
CAPOP
|
Capacitance model selector
|
None
|
2
|
CBD
|
Zero-bias bulk-drain junction capacitance
|
Farad
|
0.0
|
CBS
|
Zero-bias bulk-source junction
capacitance
|
Farad
|
0.0
|
CJ (CDB,
CSB, CJA)
|
Zero-bias bulk junction bottom
capacitance
|
Farad/Meter2
|
Calculated
|
CJGATE
|
Zero-bias gate-edge sidewall bulk
junction capacitance (ACM = 3)
|
Farad/Meter
|
CJSW
|
CJSW (CJP)
|
Zero-bias bulk junction sidewall
capacitance
|
Farad/Meter
|
0.0
|
COX (CO)
|
Oxide capacitance of gate per unit
area
|
Farad/Meter2
|
Calculated
|
DEL
|
Channel length reduction
|
Meter
|
0.0
|
DELVTO
|
Threshold voltage shift at zero
bias
|
Volt
|
0.0
|
ECRIT (ESAT)
|
Critical electric field for carrier
velocity saturation. Zero represents an infinite value. Grove: electrons
6e+4,
holes 2.4e+4
|
Volt-cm-1
|
0.0
|
FC
|
Forward-bias depletion coefficient
for capacitance
|
None
|
0.0
|
F1EX
|
Bulk junction bottom grading coefficient
(Not used)
|
None
|
0.0
|
GEO
|
Layout geometry
0 = Drain and source not shared
1 = Drain shared
2 = Source shared
3 = Drain and source shared
|
None
|
0
|
HDIF
|
Length of heavily-doped diffusion
region, from contact to lightly-doped region (ACM = 2 or 3)
|
Meter
|
0.0
|
IIRAT
|
Portion of impact ionization current
that goes to source
|
None
|
0.0
|
IS
|
Bulk junction saturation current
|
Amp
|
1.0e-14
|
JS
|
Bulk junction saturation current
density
|
Amp/Meter2
|
0.0
|
JSW
|
Sidewall bulk junction saturation
current
|
Amp/Meter
|
0.0
|
KP (BET,
BETA)
|
Intrinsic transconductance parameter
|
Amp/Volt2
|
Calculated
|
LALPHA
|
Alpha length sensitivity
|
mMeter/Volt
|
0.0
|
LAMBDA (LAM,
LA)
|
Channel length modulation
|
Volt-1
|
0.0
|
LD (DLAT,
LATD)
|
Lateral diffusion into channel
from source and drain diffusions
|
Meter
|
XJ not present: 0.0
XJ present: 0.75´XJ
|
LDIF
|
Length of lightly-doped diffusion
adjacent to gate (ACM = 1 or 2)
|
Meter
|
0.0
|
LDAC
|
Lateral diffusion
|
Meter
|
None
|
LMLT
|
Length shrink factor
|
None
|
1.0
|
LREF
|
Channel length reference
|
Meter
|
0.0
|
LVCR
|
VCR length sensitivity
|
mMeter/Volt
|
0.0
|
MJ (EXA,
EXJ, EXS, EXD)
|
Bulk junction capacitance grading
coefficient
|
None
|
0.5
|
MJSW (EXP)
|
Bulk junction sidewall capacitance
grading coefficient
|
None
|
0.33
|
N
|
Emission coefficient
|
None
|
1.0
|
NDS
|
Reverse bias slope coefficient
|
None
|
1.0
|
NEFF
|
Total channel charge coefficient
|
None
|
1.0
|
NGATE
|
Polysilicon gate doping
|
1/cm3
|
Calculated
|
NSS
|
Surface state density
|
cm-2
|
0.0
|
PB (PHA,
PHS, PHD)
|
Bulk junction potential
|
Volt
|
0.8
|
PHP
|
Bulk sidewall junction contact
potential
|
Volt
|
PB
|
TOX
|
Gate oxide thickness
|
Meter
|
1e-7
|
SCALM
|
Model parameter scale factor (also
an option for .OPTIONs statement)
|
None
|
1.0
|
TNOM
|
Nominal device temperature
|
°C
|
25
|
TPG (TPS)
|
Type of gate material
0 = Aluminum gate
1 = Polysilicon gate same as source-drain diffusion
-1 = Polysilicon gate opposite to source-drain diffusion
|
None
|
1
|
TT
|
Transit time
|
Second
|
0.0
|
VCR
|
Critical voltage
|
Volt
|
0.0
|
UPDATE
|
Update selector for parasitics
model
|
None
|
0.0
|
VMAX (VMX)
|
Maximum carrier drift velocity
|
Meter/Second
|
0.0
|
VNDS
|
Reverse diode current transition
point
|
Volt
|
-1.0
|
WALPHA
|
Alpha width sensitivity
|
mMeter/Volt
|
0.0
|
WD
|
Lateral diffusion into channel
from bulk along width
|
Meter
|
0.0
|
WMLT
|
Width shrink factor
|
None
|
1.0
|
WREF
|
Channel width reference
|
Meter
|
0.0
|
WVCR
|
VCR width sensitivity
|
mMeter/Volt
|
0.0
|
XJ
|
Metallurgical junction depth
|
Meter
|
0.0
|
XL (DL,
LDEL)
|
Length bias factor for mask and
etch effects
|
Meter
|
0.0
|
XLREF
|
Channel length reference bias factor
for mask and etch effects
|
Meter
|
0.0
|
XW (DW,
WDEL)
|
Width bias factor for mask and
etch effects
|
Meter
|
0.0
|
XWREF
|
Channel width reference bias factor
for mask and etch effects
|
Meter
|
0.0
|
.
.
SPICE 2G Grove-Frohman MOSFET Model
Netlist Example
.MODEL nmos2 NMOS LEVEL=2
+ VTO=0.78 TOX=400E-10 NSUB=8.0E15 XJ=-0.15E-6
+ LD=0.20E-6 UO=650 UCRIT=0.62E5 UEXP=0.125 VMAX=5.1E4
NEFF=4.0
+ DELTA=1.4 RSH=37 CGSO=2.95E-10 CGDO=2.95E-10 CJ=195E-6
+ CJSW=5E-10 MJ=0.76 MJSW=0.30 PB=0.80
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