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Nexxim Simulator >
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MOSFET Levels 1 through 27 >
   MOSFET Instance, SPICE 2G Grove-Frohman Model (Level 2)       

MOSFET Instance, SPICE 2G Grove-Frohman Model (Level 2)

 

SPICE 2G Grove-Frohman MOSFET Instance Netlist Syntax

The syntax for a Level 2 Grove-Frohman MOSFET instance is:

Mxxxx nd ng ns [nb] modelname [[L=]length] [[W=]width]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val] [SCALE=val] [VDSAT=val]

[ASPEC=val] [DTEMP=val]

[M=val] [TEMP=val]

nd is the drain node, ng is the gate node, ns is the source node, and nb is the bulk or substrate node of the MOSFET. modelname is the name of a Level 2 MOSFET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val] [SCALE=val] [VDSAT=val]

[ASPEC=val] [DTEMP=val]

[M=val] [TEMP=val]

 

 


Level 2 MOSFET Instance Parameters

Instance Parameter

Description

Unit

Default

AD

Drain diffusion area

Meter2

0.0

AS

Source diffusion area

Meter2

0.0

ASPEC

ASPEC option

None

0.0

DTEMP

Difference between MOSFET and circuit temperatures

°C

0.0

L

MOSFET channel length

Meter

1.0e-4

M

Multiplier: simulates parallel transistors

None

1.0

NRD

Number of squares of drain diffusion for resistance calculations

Square

0.0

NRS

Number of squares of source diffusion for resistance calculations

Square

0.0

PD

Drain diffusion periphery

Meter

0.0

PS

Source diffusion periphery

Meter

0.0

SCALE

Scale factor for instance parameters

None

1.0

TEMP

Device temperature

°C

Calculated

VDSAT

Saturation voltage

Volt

0.0

W

MOSFET channel width

Meter

1.0e-4


SPICE 2G Grove-Frohman MOSFET Instance Netlist Example

M23 22 33 44 mosmodel2




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