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MOSFET Instance, Schichman-Hodges Model (Level 1)

MOSFET Instance, Schichman-Hodges Model (Level 1)

Schichman-Hodges MOSFET Instance Netlist Syntax

The syntax for a Level 1 Schichman-Hodges MOSFET instance is:

Mxxxx nd ng ns [nb] modelname [[L=]length] [[W=]width]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val]

[SCALE=val] [M=val] [TEMP=val] [DTEMP=val]

nd is the drain node, ng is the gate node, ns is the source node, and nb is the bulk or substrate node of the MOSFET. modelname is the name of a Level 1 MOSFET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val]

[SCALE=val] [M=val] [TEMP=val] [DTEMP=val]

**Level 1 MOSFET Instance Parameters**
Instance Parameter	Description	Unit	Default
AD	Drain diffusion area	Meter²	ACM=0 or 1: 0.0 ACM=2 or 3: -1.0
AS	Source diffusion area	Meter²	ACM=0 or 1: 0.0 ACM=2 or 3: -1.0
ASPEC	ASPEC option	None	0.0
DTEMP	Difference between MOSFET and circuit temperatures	°C	0.0
L	Channel length	Meter	1.0e-4
M	Multiplier: number of parallel transistors to be simulated	None	1.0
NRD	Number of squares for drain resistance	Square	0.0
NRS	Number of squares for source resistance	Square	0.0
PD	Drain perimeter	Meter	0.0
PS	Source perimeter	Meter	0.0
SCALE	Element scale factor (also an option for .OPTIONs statement)	None	1.0
TEMP	Nominal circuit temperature	°C	Calculated
W	Channel width	Meter	1.0e-4

Schichman-Hodges MOSFET Instance Netlist Example

M1 10 11 12 mosfet1

M12 G3 VDD 0 0 mosfet2 M=2 DTEMP=30

Mtest 34 56 78 90 fetex

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