Model Parameter

Description

Unit

Default

LEVEL

8 is required to select the Materka MESFET model

None

1 (default if LEVEL parameter is omitted)

ACM

0 = SPICE method

1 = physical basis (required for Triquint TOM features)

None

0

AF

Flicker noise exponent

None

1.0

ALIGN

Correction for gate misalignment

Meter

0.0

ALPHA (ALFA, ALPHA1)

Saturation factor

Volt^-1

2.0

AREA

Area factor

None

1.0

BETA

Transconductance (gain) parameter

Amp/Volt^-Q

1.0e-4

CAPDS (CDS)

Drain-source capacitance

Farad

0.0

CAPOP

Capacitor model selector

None

0

CGD

Zero-bias gate-drain junction capacitance

Farad

0.0

CGS

Zero-bias gate-source junction capacitance

Farad

0.0

CRAT

Source ratio of gate capacitance

None

0.666

DCAP

Capacitance equation selector

None

2

FC

Coefficient for PB in forward-bias capacitance calculations

None

0.5

GAMMA (GAMDS, GAMA)

Voltage slope parameter of pinch-off voltage

Volt^-1

0.0

GCAP

Zero-bias gate capacitance

ACM = 0 : Farad
ACM = 1 :
Farad/Meter²

Not used if not provided

GDSNOI

Channel noise coefficient (NLEV = 3)

None

1.0

HDIF

Distance of heavily-doped (low resistance) region from source or drain contact to lightly-doped region

Meter

0.0

IDSS

Drain saturation current for VGS = 0

Amp

0.1

IDSSTCE

Idss temperature exponent

None

0.0

IS

Forward gate diode saturation current.

Amp

1.0e-14

KF (KF4)

Flicker noise coefficient

None

0.0

K1

Threshold voltage sensitivity to bulk node

Volt^½

0.0

L

FET gate length

Meter

0.0

LAMBDA (LAMB)

Channel length modulation factor

Volt^-1

0.0

LAM1

Channel length modulation gate voltage parameter

Volt^-1

0.0

LDEL

Difference between drawn length and actual or optical device length

Meter

0.0

LDIF

Distance of lightly-doped region from heavily-doped region to transistor edge

Meter

0.0

MJ

Grading coefficient for gate-drain and gate-source diodes
(CAPOP = 0 or 2)

Step junction: 0.50
Linear graded junction: 0.33

None

0.50

N

Emission coefficient for gate-drain and gate-source diodes

None

1.0

ND

Drain subthreshold factor

Volt^-1

0.0

NG

Gate subthreshold factor

Volt^-1

0.0

NLEV

Noise equation selector

None

2

PB

Gate junction potential

Volt

0.8

RD

Drain ohmic resistance

Ohm

0.0

RG (RG2)

Gate ohmic resistance

Ohm

0.0

RS

Source ohmic resistance

Ohm

0.0

RSH

Sheet resistance of heavily-doped region

Ohm/square

0.0

RSHG

Gate sheet resistance

Ohm/square

0.0

TNOM (TREF)

Nominal temperature

°C

25.0

VBI

Gate diode built-in voltage

Volt

1.0

VGSS

Gate-source voltage for simulating enhancement mode FET with Vgss>Vp0

Volt

0.0

VTO (VT0, VPO)

Threshold voltage.

Negative VTO denotes a depletion transistor (for both NJF and PJF), while positive VTO denotes an enhancement transistor.

Volt

-2.0

W

FET gate width

Meter

0.0

WDEL

Difference between drawn width and actual or optical device width

Meter

0.0