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Nexxim Simulator >
Nexxim Component Models >
FETs (JFETs and MESFETs) >
   TOM3 MESFET Model (Level 7)       

TOM3 MESFET Model (Level 7)

The .MODEL statement for the Level 7 Triquint TOM3 MESFET models is:

.MODEL modelname NJF LEVEL=7 [modelparameter=]val] ...

or

.MODEL modelname PJF LEVEL=7 [modelparameter=]val] ...

LEVEL=7 specifies the TOM3 MESFET model.

 


Level 7 TOM3 MESFET Model Parameters

Model Parameter

Description

Unit

Default

LEVEL

7 is required to select the Triquint TOM3 MESFET model

None

1 (default if LEVEL parameter is omitted)

ACM

0 = SPICE method

1 = physical basis (required for Triquint TOM features)

None

0

AF

Flicker noise exponent

None

1.0

ALIGN

Correction for gate misalignment

Meter

0.0

ALPHA (ALPHA1, ALFA)

Saturation factor

Volt-1

2.0

ALPHATCE

ALPHA temperature coefficient (exponential)

°K-1

0.0

AREA

Area factor

None

1.0

BETA

Transconductance (gain) parameter

Amp/Volt-Q

0.1

BETATCE (ABET)

Linear temperature coefficient for BETA

°K-1

0.0

CAPDS (CDS)

Drain-source capacitance

Farad

1.0e-12

CAPOP

Capacitor model selector

None

0

CDSC

Dispersion model capacitance

Farad

1.0e-18

CGD

Zero-bias gate-drain junction capacitance

Farad

0.0

CGDTCE

Linear temperature coefficient for CGD

°K-1

0.0

CGS

Zero-bias gate-source junction capacitance

Farad

0.0

CGSTCE

Linear temperature coefficient for CGS

°K-1

0.0

DCAP

Capacitance equation selector

None

2

DGAM

Dispersion model feedback coefficient

None

0.0

DELTA

Ids feedback parameter.

None

0.0

EG

Barrier height at 0 °K.

Volt

1.11

FC

Coefficient for PB in forward-bias capacitance calculations

None

0.5

GAMMA (GAMDS, GAMA)

Lowering coefficient for drain voltage-induced threshold voltage

None

0.0

GAMMATC(AGAM)

Linear temperature coefficient for GAMMA

°K-1

0.0

GDSNOI

Channel noise coefficient (NLEV = 3)

None

1.0

HDIF

Distance of heavily-doped (low resistance) region from source or drain contact to lightly-doped region

Meter

0.0

ILK

Leakage diode current parameter

Amp

0.0

IS

Forward gate diode saturation current.

Amp

1.0e-14

K (KAPP)

Knee-function parameter

None

2

KF (KF4)

Flicker noise coefficient

None

0.0

K1

Threshold voltage sensitivity to bulk node

Volt½

0.0

L

FET gate length

Meter

0.0

LAMBDA (LAMB)

Channel length modulation factor

Volt-1

0.0

LAM1

Channel length modulation gate voltage parameter

Volt-1

0.0

LDEL

Difference between drawn length and actual or optical device length

Meter

0.0

LDIF

Distance of lightly-doped region from heavily-doped region to transistor edge

Meter

0.0

MJ

Grading coefficient for gate-drain and gate-source diodes
(CAPOP = 0 or 2)

Step junction: 0.50
Linear graded junction: 0.33

None

0.50

MST

Subthreshold slope-drain parameter

Volt-1

0.0

MSTTC (AMST)

Linear temperature coefficient for MST

Volt-1°K-1

0.0

N

Forward gate diode ideality factor

None

1.0

ND

Drain subthreshold factor

Volt-1

0.0

NG

Gate subthreshold factor

Volt-1

0.0

NLEV

Noise equation selector

None

2

PB

Gate junction potential

Volt

0.8

PLK

Leakage diode potential parameter

Volt

1.0

QGAD

Charge parameter

Volt-1

1.0

QGAG

Charge parameter

Volt-1

1.0

QGCL

Charge parameter

Farad

2.0e-16

QGDH

Sidewall capacitance

Farad

0.0

QGG0

Charge parameter

Farad

0.0

QGGB

Charge parameter

Amp-1Volt-1

100

QGI0

Charge parameter

Amp

1.0e-6

QGQH

Charge parameter

Farad-Volt

-2.0e-16

QGQL

Charge parameter

Farad-Volt

5.0e-16

QGSH

Sidewall capacitance

Farad

1.0e-16

RD

Drain ohmic resistance

Ohm

0.0

RG (RG2)

Gate ohmic resistance

Ohm

0.0

RS

Source ohmic resistance

Ohm

0.0

RSH

Sheet resistance of heavily-doped region

Ohm/square

0.0

RSHG

Gate sheet resistance

Ohm/square

0.0

TNOM (TREF)

Nominal temperature

°C

25.00

TT

Transit time

Second

0.0

TUGD

Dispersion model time constant

Second

1.0e-9

VBI

Gate diode built-in voltage

Volt

1.0

VBITC

Linear temperature coefficient of VBI

Volt/°K

0.0

VGEXP (Q)

Gate voltage exponent

None

2.0

VST

Subthreshold slope

Volt

1.0

VTO (VT0, VPO)

Threshold voltage.

Negative VTO denotes a depletion transistor (for both NJF and PJF), while positive VTO denotes an enhancement transistor.

Volt

-2.0

VTOTC (TCV, AVT0)

Temperature compensation coefficient for threshold voltage VTO

°K-1

0.0

VSTTC (AVST)

Linear temperature coefficient for VST

Volt

0.0

W

FET gate width

Meter

0.0

WDEL

Difference between drawn width and actual or optical device width

Meter

0.0

XTI

Diode saturation current temperature exponent

None

3.0


TOM3 Model Netlist Example

.MODEL mesfet7 NJF LEVEL=7

+ beta=626e-6 lambda=0 ilk =.5e-5

+ vto=-2.33 is=0.0e-9 tt=1.0e-14

+ n=2.0 cgs=1e-15 cgd=1e-15

+ gamds=1e-4 ucrit=1e-2 vgexp=2.2 alpha=2.5

+ m=0.5 pb=0.7 fc=0.5 capop=1

+ rd=0 rs=0 satexp=3.2




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