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Nexxim Simulator > Nexxim Component Models >
FETs (JFETs and MESFETs) > TOM3 MESFET Model (Level 7)
TOM3 MESFET Model (Level 7)
The .MODEL statement for the Level
7 Triquint TOM3 MESFET models is:
.MODEL modelname NJF LEVEL=7
[modelparameter=]val] ...
or
.MODEL modelname PJF LEVEL=7
[modelparameter=]val] ...
LEVEL=7 specifies
the TOM3 MESFET model.
Level 7 TOM3 MESFET Model
Parameters
Model Parameter
|
Description
|
Unit
|
Default
|
LEVEL
|
7 is required to select the Triquint
TOM3 MESFET model
|
None
|
1 (default if LEVEL parameter is
omitted)
|
ACM
|
0 = SPICE method
1 = physical basis (required for Triquint TOM features)
|
None
|
0
|
AF
|
Flicker noise exponent
|
None
|
1.0
|
ALIGN
|
Correction for gate misalignment
|
Meter
|
0.0
|
ALPHA (ALPHA1,
ALFA)
|
Saturation factor
|
Volt-1
|
2.0
|
ALPHATCE
|
ALPHA temperature coefficient (exponential)
|
°K-1
|
0.0
|
AREA
|
Area factor
|
None
|
1.0
|
BETA
|
Transconductance (gain) parameter
|
Amp/Volt-Q
|
0.1
|
BETATCE (ABET)
|
Linear temperature coefficient
for BETA
|
°K-1
|
0.0
|
CAPDS (CDS)
|
Drain-source capacitance
|
Farad
|
1.0e-12
|
CAPOP
|
Capacitor model selector
|
None
|
0
|
CDSC
|
Dispersion model capacitance
|
Farad
|
1.0e-18
|
CGD
|
Zero-bias gate-drain junction capacitance
|
Farad
|
0.0
|
CGDTCE
|
Linear temperature coefficient
for CGD
|
°K-1
|
0.0
|
CGS
|
Zero-bias gate-source junction
capacitance
|
Farad
|
0.0
|
CGSTCE
|
Linear temperature coefficient
for CGS
|
°K-1
|
0.0
|
DCAP
|
Capacitance equation selector
|
None
|
2
|
DGAM
|
Dispersion model feedback coefficient
|
None
|
0.0
|
DELTA
|
Ids feedback parameter.
|
None
|
0.0
|
EG
|
Barrier height at 0 °K.
|
Volt
|
1.11
|
FC
|
Coefficient for PB in forward-bias
capacitance calculations
|
None
|
0.5
|
GAMMA (GAMDS,
GAMA)
|
Lowering coefficient for drain
voltage-induced threshold voltage
|
None
|
0.0
|
GAMMATC(AGAM)
|
Linear temperature coefficient
for GAMMA
|
°K-1
|
0.0
|
GDSNOI
|
Channel noise coefficient (NLEV
= 3)
|
None
|
1.0
|
HDIF
|
Distance of heavily-doped (low
resistance) region from source or drain contact to lightly-doped region
|
Meter
|
0.0
|
ILK
|
Leakage diode current parameter
|
Amp
|
0.0
|
IS
|
Forward gate diode saturation current.
|
Amp
|
1.0e-14
|
K (KAPP)
|
Knee-function parameter
|
None
|
2
|
KF (KF4)
|
Flicker noise coefficient
|
None
|
0.0
|
K1
|
Threshold voltage sensitivity to
bulk node
|
Volt½
|
0.0
|
L
|
FET gate length
|
Meter
|
0.0
|
LAMBDA (LAMB)
|
Channel length modulation factor
|
Volt-1
|
0.0
|
LAM1
|
Channel length modulation gate
voltage parameter
|
Volt-1
|
0.0
|
LDEL
|
Difference between drawn length
and actual or optical device length
|
Meter
|
0.0
|
LDIF
|
Distance of lightly-doped region
from heavily-doped region to transistor edge
|
Meter
|
0.0
|
MJ
|
Grading coefficient for gate-drain
and gate-source diodes
(CAPOP = 0 or 2)
Step junction: 0.50
Linear graded junction: 0.33
|
None
|
0.50
|
MST
|
Subthreshold slope-drain parameter
|
Volt-1
|
0.0
|
MSTTC (AMST)
|
Linear temperature coefficient
for MST
|
Volt-1°K-1
|
0.0
|
N
|
Forward gate diode ideality factor
|
None
|
1.0
|
ND
|
Drain subthreshold factor
|
Volt-1
|
0.0
|
NG
|
Gate subthreshold factor
|
Volt-1
|
0.0
|
NLEV
|
Noise equation selector
|
None
|
2
|
PB
|
Gate junction potential
|
Volt
|
0.8
|
PLK
|
Leakage diode potential parameter
|
Volt
|
1.0
|
QGAD
|
Charge parameter
|
Volt-1
|
1.0
|
QGAG
|
Charge parameter
|
Volt-1
|
1.0
|
QGCL
|
Charge parameter
|
Farad
|
2.0e-16
|
QGDH
|
Sidewall capacitance
|
Farad
|
0.0
|
QGG0
|
Charge parameter
|
Farad
|
0.0
|
QGGB
|
Charge parameter
|
Amp-1Volt-1
|
100
|
QGI0
|
Charge parameter
|
Amp
|
1.0e-6
|
QGQH
|
Charge parameter
|
Farad-Volt
|
-2.0e-16
|
QGQL
|
Charge parameter
|
Farad-Volt
|
5.0e-16
|
QGSH
|
Sidewall capacitance
|
Farad
|
1.0e-16
|
RD
|
Drain ohmic resistance
|
Ohm
|
0.0
|
RG (RG2)
|
Gate ohmic resistance
|
Ohm
|
0.0
|
RS
|
Source ohmic resistance
|
Ohm
|
0.0
|
RSH
|
Sheet resistance of heavily-doped
region
|
Ohm/square
|
0.0
|
RSHG
|
Gate sheet resistance
|
Ohm/square
|
0.0
|
TNOM (TREF)
|
Nominal temperature
|
°C
|
25.00
|
TT
|
Transit time
|
Second
|
0.0
|
TUGD
|
Dispersion model time constant
|
Second
|
1.0e-9
|
VBI
|
Gate diode built-in voltage
|
Volt
|
1.0
|
VBITC
|
Linear temperature coefficient
of VBI
|
Volt/°K
|
0.0
|
VGEXP (Q)
|
Gate voltage exponent
|
None
|
2.0
|
VST
|
Subthreshold slope
|
Volt
|
1.0
|
VTO (VT0,
VPO)
|
Threshold voltage.
Negative VTO denotes a depletion transistor (for
both NJF and PJF), while positive VTO denotes an enhancement transistor.
|
Volt
|
-2.0
|
VTOTC (TCV,
AVT0)
|
Temperature compensation coefficient
for threshold voltage VTO
|
°K-1
|
0.0
|
VSTTC (AVST)
|
Linear temperature coefficient
for VST
|
Volt
|
0.0
|
W
|
FET gate width
|
Meter
|
0.0
|
WDEL
|
Difference between drawn width
and actual or optical device width
|
Meter
|
0.0
|
XTI
|
Diode saturation current temperature
exponent
|
None
|
3.0
|
TOM3 Model Netlist Example
.MODEL mesfet7 NJF LEVEL=7
+ beta=626e-6 lambda=0 ilk =.5e-5
+ vto=-2.33 is=0.0e-9 tt=1.0e-14
+ n=2.0 cgs=1e-15 cgd=1e-15
+ gamds=1e-4 ucrit=1e-2 vgexp=2.2 alpha=2.5
+ m=0.5 pb=0.7 fc=0.5 capop=1
+ rd=0 rs=0 satexp=3.2
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