Statz MESFET Model

Model Parameter

Description

Unit

Default

AF

Flicker noise exponent

None

1.0

ALPHA

Saturation factor

None

2.0

B

Ids-Igs characteristics factor

None

0.0

BETA

Transconductance coefficient

None

1.0e-4

BETATCE

Beta temperature coefficient for Triquint model

None

0.0

CDS

Drain-source capacitance

Farad

0.0

CGD

Gate-drain capacitance

Farad

0.0

CGS

Gate-source capacitance

Farad

0.0

DELTA1

Capacitance saturation transition voltage

Volt

0.3

DELTA2

Capacitance saturation transition voltage

Volt

0.2

EG

Energy gap for gate-drain and gate-source diodes at 0°K

Volt

1.11

FC

Coefficient for forward-bias depletion capacitance formulas

None

0.5

IS

Leakage saturation current

Ampere

1.0e-14

KF

Flicker noise coefficient. Reasonable values are from 1e-19 to 1e-25.

None

0.0

LAMBDA

Channel length modulation factor

None

0.0

N

Gate diode emission coefficient

None

1.0

RD

Drain ohmic resistance

Ohm

0.0

RG

Gate ohmic resistance

Ohm

0.0

RS

Source ohmic reisitance

Ohm

0.0

VTOTC

Temperature compensation coefficient for VTO

None

0.0

TNOM

Nominal circuit temperature

°C

25.0

TQM

Junction capacitance temperature coefficient

None

0.2

VBI

Built-in gate diode voltage

Volt

0.85

VMAX

Maximum junction voltage before capacitance limiting

Volt

0.5

VTO

Threshold voltage

Volt

-2.0

XTI

Saturation current temperature exponent

None

3.0

IDSMOD

IDS Model

None

3.0

TAU

Transit time under the gate

Second

0.0

IDSTC

IDS temperature coefficient

None

0.0

RIN

Channel resistance

Ohm

0.0

GSCAP

Gate-source capacitance model selector: 0=None, 1=Linear, 2=Junction, 3=Statz Charge, 5= Statz Capacitance

None

1

RGD

Gate-drain resistance

Ohm

0.0

GDCAP

Gate-drain capacitance model selector: 0=None, 1=Linear, 2=Junction, 3=Statz Charge, 5= Statz Capacitance

None

1

LG

Gate inductance

Henry

0.0

LD

Drain inductance

Henry

0.0

LS

Source inductance

Henry

0.0

CRF

With RC, frequency-dependent output capacitance

Farad

0.0

GSFWD

Forward Igs model selector: 0=None, 1=Linear, 2=Diode

None

1

GSREV

Reverse Igs model selector: 0=None, 1=Linear, 2=Diode

None

0

GDFWD

Forward Igd model selector: 0=None, 1=Linear, 2=Diode

None

0

GDREV

Reverse Igd model selector: 0=None, 1=Linear, 2=Diode

None

1

VBR

Gate-drain junction reverse bias breakdown voltage

Volt

1.0e100

VJR

Breakdown junction potential

Volt

0.025

IR

Gate reverse saturation current

Ampere

1.0e-14

IMAX

Explosion current

Ampere

1.6

IMELT

Diode limiting current

Ampere

1.6

FNC

Flicker noise corner frequency

Hertz

0.0

R

Gate noise coefficient

None

0.5

P

Drain noise coefficient

None

1.0

C

Gate-drain noise correlation coefficient

None

0.9

FFE

Flicker noise exponent

None

1.0

RC

Frequency-dependent resistance

Ohm

0.0