Level 9 Curtice3 GaAsFET
Model Parameters
Model Parameter
|
Description
|
Unit
|
Default
|
LEVEL
|
9 is required to select the Curtice3
GaAsFET model
|
None
|
1 (default if LEVEL parameter is
omitted)
|
BETATCE
|
Beta temperature coefficient for
TriQuint model
|
|
0.0
|
CDS
|
Drain to source capacitance
|
Farad
|
0.0
|
CGD
|
Zero-bias gate-drain junction capacitance
|
Farad
|
0.0
|
CGS
|
Zero-bias gate-source junction
capacitance
|
Farad
|
0.0
|
EG
|
Energy gap for gate-to-drain and
gate-to-source diodes at 0.0K
|
e-V
|
1.11
|
FC
|
Coefficient for forward-bias depletion
capacitance formulas‘
|
|
0.5
|
IS
|
Leakage saturation current
|
Ampere
|
1.0e-14
|
N
|
Gate diode emission coefficient
|
None
|
1.0
|
RD
|
Drain ohmic resistance
|
Ohm
|
0.0
|
RG
|
Gate ohmic resistance
|
Ohm
|
0.0
|
RS
|
Source ohmic resistance
|
Ohm
|
0.0
|
VTOTC
|
Temperature compensation coefficient
for VTO
|
|
0.0
|
TNOM
|
Nominal circuit temperature
|
°C
|
25.0
|
VBI
|
Built-in gate diode voltage
|
Volt
|
0.85
|
VTO
|
Threshold voltage
|
Volt
|
Not used if not defined
|
XTI
|
Saturation current temperature
coefficient
|
|
3.0
|
IDSMOD
|
IDS model selector
|
None
|
2.0
|
TAU
|
Transit time under the gate
|
Second
|
0.0
|
IDSTC
|
Ids temperature coefficient
|
|
0.0
|
RF
|
Gate-source effective forward-bias
resistance
|
Ohm
|
0.0
|
GSCAP
|
Gate-source capacitance model selector
0=None, 1=Linear, 2=Junction, 3=Stazt charge, 5=Statz cap
|
None
|
1
|
RGD
|
Gate-drain resistance
|
Ohm
|
0.0
|
GDCAP
|
Gate-drain capacitance model selector
0=None, 1=Linear, 2=Junction, 3=Stazt charge, 5=Statz cap
|
None
|
1
|
LG
|
Gate inductance
|
Henry
|
0.0
|
LD
|
Drain inductance
|
Henry
|
0.0
|
LS
|
Source inductance
|
Henry
|
0.0
|
CRF
|
With RDS, models frequency-dependent
output conductance
|
|
0.0
|
GSFWD
|
0=None, 1=Linear, 2=Diode
|
|
1.0
|
GSREV
|
0=None, 1=Linear, 2=Diode
|
|
1.0
|
GDFWD
|
0=None, 1=Linear, 2=Diode
|
|
1.0
|
GDREV
|
0=None, 1=Linear, 2=Diode
|
|
1.0
|
R1
|
Approximate breakdown resistance
|
Ohm
|
0.0
|
R2
|
Resistance relating breakdown voltage
to channel current
|
Ohm
|
0.0
|
VBR
|
Gate-drain junction reverse bias
breakdown voltage (gate-source junction reverse bias breakdown voltage
with Vds<0)
|
Volt
|
1e100
|
VJR
|
Breakdown junction potential
|
Volt
|
0.025
|
IR
|
Gate reverse saturation current
|
Ampere
|
1.0e-14
|
IMAX
|
Explosion current
|
Ampere
|
1.0
|
IMELT
|
|
Ampere
|
1.0
|
FNC
|
Flicker noise corner frequency
|
Hz
|
0.0
|
R
|
Gate noise coefficient
|
|
0.5
|
P
|
Drain noise coefficient
|
|
1.0
|
C
|
Gate-drain noise correlation coefficient
|
None
|
0.9
|
BETA2
|
Coefficient for pinch-off change
with respect to Vds
|
|
1.0e-4
|
RDS0
|
DC conductance at Vgs=0
|
|
0.0
|
VOUT0
|
Output voltage at which A0, A1,
A2, and A3 were evaluated
|
Volt
|
0.0
|
VDSDC
|
Vds at RDSO measured bias
|
Volt
|
0.0
|
GAMMA
|
Current saturation
|
|
2.0
|
A0
|
Cubic polynomial Ids equation coefficient
1
|
|
0.0
|
A1
|
Cubic polynomial Ids equation coefficient
2
|
|
0.0
|
A2
|
Cubic polynomial Ids equation coefficient
3
|
|
0.0
|
A3
|
Cubic polynomial Ids equation coefficient
4
|
|
0.0
|
RIN
|
Channel resistance
|
Ohm
|
0.0
|
A5
|
Time delay proportionality constant
for Vds
|
|
0.0
|
KF
|
Flicker noise coefficient
|
|
0.0
|
AF
|
Flicker noise exponent
|
|
1.0
|
FFE
|
Flicker noise exponent
|
|
1.0
|
RDS
|
Additional output resistance for
RF operation
|
Ohm
|
0.0
|