Model Parameter

Description

Unit

Default

LEVEL

22 is required to select the Curtice2 Advanced GaAsFET model

None

1 (default if LEVEL parameter is omitted)

ALPHA

Saturation factor

None

2.0

BETA

Transconductance coefficient

None

1.0e-4

BETATCE

Beta temperature coefficient for Triquint models

None

0.0

CDS

Drain to source capacitance

Farad

0.0

CGD

Zero-bias gate-drain junction capacitance

Farad

0.0

CGS

Zero-bias gate-source junction capacitance

Farad

0.0

EG

Energy gap for gate-to-drain and gate-to-source diode at 0.0 K

1.11

FC

Coefficient for forward-bias depletion capacitance formulas

0.5

GAMDS

Drain voltage induced threshold voltage lowering coefficient

-0.01

IS

Leakage saturation current

Amp

1.0e-14

KF

Flicker noise coefficient

None

0.0

LAMBDA

Channel length modulation

0.0

N

Gate diode emission coefficient

None

1.0

RD

Drain ohmic resistance

Ohm

0.0

RG

Gate ohmic resistance

Ohm

0.0

RS

Source ohmic resistance

Ohm

0.0

VTOTC

Temperature compensation coefficient for VTO

0.0

TNOM

Nominal temperature

°C

25

UCRIT

Critical field for mobility degradation

0.0

VBI

Gate diode built-in voltage

Volt

0.85

VGEXP

Gate voltage exponent

2.0

VTO

Threshold voltage

Volt

-2.0

XTI

Saturation current temperature exponent

3.0

IDSMOD

IDS model

None

2.0

TAU

Transit time under the gate

Second

0.0

IDSTC

Ids temperature coefficient

0.0

RF

Gate-source effective forward-bias resistance

Ohm

0.0

GSCAP

Gate-source capacitance model

0 = None

1 = Linear

2 = Junction

3 = Statz charge

5 = Statz capacitance

None

1

RGD

Gate-drain resistance

Ohm

0.0

GDCAP

Gate-drain capacitance model

0 = None

1 = Linear

2 = Junction

3 = Statz charge

5 = Statz capacitance

None

1

LD

Drain inductance

Henry

0.0

LG

Gate inductance

Henry

0.0

LS

Source inductance

Henry

0.0

CRF

With RDS, frequency-dependent output conductance

Siemens

0.0

GSFWD

None

1.0

GSREV

None

2.0

GDFWD

None

1.0

GDREV

None

2.0

R1

Approximate breakdown resistance

Ohm

0.0

R2

Resistance relating breakdown voltage to channel current

Ohm

0.0

VBR

Gate-drain junction reverse-bias breakdown voltage (gate-source junction reverse-bias breakdown voltage with Vds<0)

Volt

1.0e100

VJR

Breakdown junction potential

Volt

0.025

IR

Gate reverse saturation current

Ampere

1.0e-14

IMAX

Explosion current

Ampere

1.0

IMELT

Ampere

1.0

FNC

Flicker noise corner frequency

Hertz

0.0

R

Gate noise coefficient

0.5

P

Gate noise coefficient

1.0

C

Gate noise coefficient

0.9

RC

Used with CRF to model frequency dependence output

0.0

RGS

Gate-source resistance

Ohm

0.0