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Ansoft Designer / Ansys Designer 在线帮助文档：

Nexxim Simulator >
Nexxim Component Models >
FETs (JFETs and MESFETs) >
   GaAsFET Instance, Curtice2 Model (Level 21)       

GaAsFET Instance, Curtice2 Model (Level 21)

 

Curtice2 GaAsFET Instance Netlist Syntax

The syntax for a Level 21 Curtice2 Gallium Arsenide Field-Effect Transistor instance is:

Jxxxx nd ng ns modelname [AREA=val] [TEMP=val] [DTEMP=val] [M=val]

nd is the drain node, ng is the gate node, and ns is the source node of the transistor. The modelname is the name of a Level 21 GaAsFET model defined in a .MODEL statement.

 


Level 21 GaAsFET Instance Parameters

Parameter

Description

Unit

Default

AREA

Area multiplier

None

1.0

M

Multiplier for multiple parallel devices

None

1.0

TEMP

Device temperature

°C

Circuit temperature

DTEMP

Temperature difference between device and circuit

°C

0.0

Curtice2 GaAsFET Instance Netlist Example

J15 12 VCC 0 gaasfet21 area=1.1



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