Model Parameter

Description

Unit

Default

LEVEL

19 is required to select the Angelov-Chalmers GaAsFET model

None

1 (default if LEVEL parameter is omitted)

ALPHR

Ids calculation parameter

None

0.619601

ALPHS

Ids calculation parameter

None

1.0e-7

B1

P1 coefficient, unsaturated

None

0.505595

B2

P2 coefficient, unsaturated

None

0.536229

CDS0

Capacitance from drain to source

Farad

0.07678

CDSW

Drain-source capacitance

Henry

1.0e-19

CGD0

Capacitance from gate to drain

Farad

7.646539e-12

CGDP

Pinch-off capacitance from gate to drain

Farad

0.137838e-12

CGEXT

External gate capacitance

Farad

0.08e-12

CGS0

Capacitance from gate to source

Farad

0.5848117e-12

CGSP

Pinch-off capacitance from gate to source

Farad

0.4379102e-12

CPD

Parasitic drain capacitance

Farad

1.0e-19

CPG

Parasitic gate capacitance

Farad

1.0e-19

CRF

Capacitance for calculating frequency-dependent output conductance

Farad

4.0e-7

CDEXT

External drain capacitance

Farad

0.13e-12

I0

Saturation current per unit area

Amp

0.00065e-3

IPK

Peak transconductance current

Amp

0.198032

L

Inductance, source to drain

Henry

1.0

LAMBDA

Modulation parameter for channel length

None

0.0193209

LD

Drain inductance

Henry

1.0e-16

LDEXT

External drain inductance

Henry

0.085e-9

LG

Gate inductance

Henry

1.0e-16

LGEXT

External gate inductance

Henry

0.09e-9

LS

Source inductance

Henry

0.007e-9

N

Emission coefficient

None

4.1

P1

Channel current polynomial coefficient

None

0.524204

P10

Capacitance polynomial coefficient

Farad

10.37095

P11

Capacitance polynomial coefficient

Farad

2.652327

P2

Channel current polynomial coefficient

None

-0.0005232

P20

Capacitance polynomial coefficient

Farad

0.331596

P21

Capacitance polynomial coefficient

Farad

-0.0024284

P3

Channel current polynomial coefficient

None

0.1411908

P30

Capacitance polynomial coefficient

Farad

-0.105783

P31

Capacitance polynomial coefficient

Farad

0.048553

P40

Capacitance polynomial coefficient

Farad

-0.875367

P41

Capacitance polynomial coefficient

Farad

0.201137

P110

Capacitance polynomial coefficient

Farad

2.822948

P111

Capacitance polynomial coefficient

Farad

1.383106

RCW

1.0e5

RD

Drain resistance

Ohm

2.0

RG

Gate resistance

Ohm

0.8

RGD

Gate-drain resistance

Ohm

0.1

RI

Gate-source resistance

Ohm

1.29

RS

Source resistance

Ohm

1.6

TAU

Time delay

Sec

0.004038e-9

VPK0

Peak voltage parameter

Volt

-1.964205

VPKS

Peak transconductance gate voltage

Volt

1.0e-7

VT

Threshold voltage

Volt

0.025

WG

1000.0