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Nexxim Simulator >
Nexxim Component Models >
Diodes >
   Step Recovery Diode Model, Level 9       

Step Recovery Diode Model, Level 9

The syntax for a Level 9 step recovery diode model is:

.MODEL modelname D LEVEL=9 [model_parameter=val] ...

modelname is the name used by the diode instance to refer to the .MODEL statement. LEVEL=9 selects the step recovery diode mode.

 


Step Recovery Diode Model Parameters

Model Parameter

Description

Unit

Default

LEVEL

9 selects the step recovery diode model

None

1

AF

Flicker noise exponent

None

1.0

BV

Reverse breakdown voltage

Volt

30.0

CF

Junction capacitance at forward bias

Farad

2.0e-8

CR

Junction capacitance at reverse bias

Farad

0.0

EG

Energy gap for pn junction

Electron-Volt

1.11

FC

Coefficient for forward-bias depletion area capacitance

None

0.5

IBV

Current at breakdown voltage

Amp/Meter2

1.0e-3

IS

Saturation current

Amp/Meter2

1.0e-14

KF

Flicker noise coefficient

None

0.0

M

Area junction grading coefficient

None

0.5

N

Emission coefficient

None

1.0

RS

Ohmic series resistance

Ohm

0.0

TNOM

Nominal temperature

°C

25.0

VJ

Junction potential

Volt

1.0

XTI

Saturation current temperature exponent

None

3.0


Step Recovery Diode Model Netlist Example

.MODEL DiodeSR D LEVEL=9

 

Device Equations

Area Effects

IS= AREA ´ IS

CR = AREA ´ CR

CF= AREA ´ CF

RS = RS / AREA

 

Current Equations

The current equations are based on the SPICE diode with breakdown.

The following expressions are used:

VT = k*temperature/q (circuit thermal voltage)

VTNOM= k*tnom_kelvin/q (nominal thermal voltage, )

k = Boltzmann’s constant

tnom_kelvin = Analysis temperature converted from °C to °K

q = Electron charge

 

 

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For IBV > IBREAK:

 

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For IBV <= IBREAK:

 

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For VD >=0.0:

 

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For VD <0.0:

 

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Where:

 

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Charge Equations

The charge equations are based on Zhang and Rasmussen, “A New Model of Step Recovery Diode for CAD,” MTT-S 1995, pp 1459-1462.

 

If VD <=0.0:

 

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Else if 0.0<VD<FC*VJ:

 

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Else:

 

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