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Nexxim Simulator >
Nexxim Component Models >
Diodes >
Enhanced SPICE Diode Model, Level = 7

Enhanced SPICE Diode Model, Level = 7

The syntax for an enhanced SPICE diode model is:

.MODEL modelname D LEVEL=7 [model_parameter=val] ... )

modelname is the name for used by diode instances to refer to this .MODEL statement.

**Enhanced SPICE Diode Intrinsic Model Parameters**
Model Parameter	Description	Unit	Default
LEVEL	7 is required to select the enhanced SPICE diode model	None	1
IS	Saturation current	Ampere	1.0e-14
N	Emission coefficient	None	1.0
IKF	High injection knee current	Ampere	1.0e37
IBV	Magnitude of current at the reverse breakdown voltage	Ampere	1.0e-11
BV	Magnitude of the reverse breakdown voltage	Volt	1.0e37
ISR	Recombination current parameter	Ampere	0.0
NR	Emission coefficient for Isr	None	2.0
NBV	Reverse breakdown ideality factor	None	1.0
NBVL	Low-level reverse breakdown ideality factor	None	1.0
IBVL	Low-level reverse breakdown knee current	Ampere	0.0
T (TT)	Transit time constant	Second	0.0
RS	Series resistance	Ohm	0.0

**Enhanced SPICE Diode Model Capacitance Parameters**
Model Parameter	Description	Unit	Default
CJ0	Zero-bias PN junction capacitance	Farad	0.0
FC	Coefficient for forward-bias depletion capacitance	None	0.5
VJ	Built-in junction potential	Volt	1.0
M	PN junction grading coefficient	None	0.5
GC1	Varactor capacitance polynomial coefficient 1	1/Volt	0.0
GC2	Varactor capacitance polynomial coefficient 2	1/Volt²	0.0
GC3	Varactor capacitance polynomial coefficient 3	1/Volt³	0.0

**Enhanced SPICE Diode Model Temperature Parameters**
Model Parameter	Description	Unit	Default
TNOM	Reference temperature	°C	25
XTI	IS temperature exponent	None	2.0
EG	Barrier height at reference temperature	Volt	0.8
TBV1	BV temperature coefficient (linear)	1/°C	0.0
TBV2	BV temperature coefficient (quadratic)	1/°C²	0.0
TRS1	RS temperature coefficient (linear)	1/°C	0.0
TRS2	RS temperature coefficient (quadratic)	1/°C²	0.0
TIKF	IKF temperature coefficient (linear)	1/°C	0.0

**Enhanced SPICE Diode Model Noise Parameters**
Model Parameter	Description	Unit	Default
KF	Flicker noise coefficient	None	0.0
AF	Flicker noise exponent	None	1.0
SN	Switch to turn device shot noise ON (1) or OFF (0)	None	1
FCP	Flicker noise frequency shape factor	None	1.0

**Enhanced SPICE Diode Model DC/IV Parameters**
Model Parameter	Description	Unit	Default
IMAX	Maximum forward and reverse current for the DC I-V curves	Ampere	1.0

Enhanced SPICE Diode Model Netlist Example

.MODEL ESD1 D LEVEL=7

Model Notes

1. The transit-time parameter, TT, can also be used to approximate the reverse-recovery time of a diode.

2. Diode breakdown can be modeled by specifying IBV and BV parameters.

3. The reverse-bias capacitance characteristics can be more accurately modeled than the common expression derived from PN junction theory. The capacitance grading coefficient exponent can be expressed as a polynomial function of voltage by specifying values for GC1, GC2, and GC3.

Area Effects

I_d= AREA ´ I_d

I_sr= AREA ´ I_sr

I_bv= AREA ´ I_bv

I_bvl= AREA ´ I_bvl

C_j = AREA ´ C_j

R_s= R_s / AREA

Device Equations

All components of the equivalent circuit are assumed to be functions of the junction potential voltage Vj. This voltage is automatically selected by the program as the only state-variable for the microwave diode model. The following expressions are used:

V_j= intrinsic junction voltage state variable

V_t= k TJ/q (thermal voltage)

k = Boltzmann’s constant

q = Electron charge

TJ = Analysis temperature (internally converted from °C to °K)

DC Current

Id = AREA(I_fwd-I_rev)

Forward current I_fwd = I_f* K_inj + I_rec * K_gen

Where:

Normal forward current