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Nexxim Simulator >
Nexxim Component Models >
Diodes >
PIN Diode Model, Level = 5

PIN Diode Model, Level = 5

The syntax for a PIN diode model is:

.MODEL modelname D LEVEL=5 [model_parameter=val] ...

modelname is the name for used by diode instances to refer to this .MODEL statement.

**PIN Diode Intrinsic Model Parameters**
Model Parameter	Description	Unit	Default
LEVEL	5 is required to select the PIN diode model	None	1 (default if LEVEL parameter is omitted)
IS	Saturation current	Ampere	1.0e-14
N	Emission coefficient	None	1.0
IBV	Magnitude of current at the reverse breakdown voltage	Ampere	1.0e-11
BV	Magnitude of the reverse breakdown voltage	Volt	1.0e37
K1	Variable resistance coefficient	Volt	0.0
K2	Variable resistance current exponent	None	1.0
RMAX	Maximum resistance of PIN intrinsic region	Ohm	0.0
RS	Series resistance (M<inimum resistance of PIN diode)	Ohm	0.0
T (TT)	Transit time constant	Second	0.0

**PIN Diode Model Capacitance Parameters**
Model Parameter	Description	Unit	Default
CJ0	Zero-bias PN junction capacitance	Farad	0.0
FC	Coefficient for forward-bias depletion capacitance	None	0.5
VJ	Built-in junction potential	Volt	1.0
M	PN junction grading coefficient	None	0.5
GC1	Varactor capacitance polynomial coefficient 1	1/Volt	0.0
GC2	Varactor capacitance polynomial coefficient 2	1/Volt²	0.0
GC3	Varactor capacitance polynomial coefficient 3	1/Volt³	0.0

**PIN Diode Model Temperature Parameters**
Model Parameter	Description	Unit	Default
TNOM	Reference temperature	°C	25
XTI	IS temperature exponent	None	2.0
EG	Barrier height at reference temperature	Volt	0.8

**PIN Diode Model Noise Parameters**
Model Parameter	Description	Unit	Default
KF	Flicker noise coefficient	None	0.0
AF	Flicker noise exponent	None	1.0
SN	Switch to turn device shot noise ON (1) or OFF (0)	None	1
FCP	Flicker noise frequency shape factor	None	1.0

PIN Diode Model Netlist Example

.MODEL PIN1 D Level=5

PIN Diode Model Notes

[1] The PIN diode model provides a bias-dependent RF resistance for use in PIN diode circuits such as attenuators and switches. A resistance RS is placed in series with two parallel resistances:

A constant resistance,

A variable resistance,

for

[2] The transit time parameter T can approximately model the reverse-recovery time of a switching PIN diode, a value aften provided by the manufacturer.

[3] Diode breakdown is modeled when the IBV and BV parameters are specified.

[4] To improve the accuracy of the reverse-bias capacitance characteristics, the capacitance grading coefficient is a polynomial function of voltage uning GC1, GC2, and GC3.

[5] Following Sze, Physics of Semiconductor Devices, the variable resistance parameters K1 and K2 may be modeled by setting:

Where:

W = Width of the intrinsic region

D_a = Ambipolar diffusion coefficient

t_a = Ambipolar lifetime

V_t = Thermal voltage

PIN Diode Model Equations

All components of the equivalent circuit are assumed to be functions of the junction voltage V_j. The program automatically selects this voltage as the only state variable for the microwave diode model. The equations use the following definitions:

V_j = Intrinsic junction voltage state variable

V_t = Thermal voltage = k*TJ/q

k = Boltzmann’s constant

q = Electron charge

TJ = Analysis temperature

Area effects