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Ansoft Designer / Ansys Designer 在线帮助文档：

Nexxim Simulator >
Nexxim Component Models >
Diodes >
   Junction Capacitance Diode Model, LEVEL=4       

Junction Capacitance Diode Model, LEVEL=4

The syntax for a Level 4 junction capacitance diode model is:

.MODEL modelname D LEVEL=4 [model_parameter=val] ...

modelname is the name for used by diode instances to refer to this .MODEL statement.

 


Level 4 Diode Model Parameters

Model Parameter

Description

Unit

Default

LEVEL

4 is required to select the junction capacitance diode model

None

1 (default if LEVEL parameter is omitted)

AREA

Diffusion area of the diode

Meter2

1.0

AB

Diffusion area of the diode

Meter2

1.0e-12

CJBR

Bottom junction capacitance at V=VR

Farad/Meter2

1.0e-12

CJGR

Gate-edge junction capacitance at V=VR

Farad/Meter2

1.0e-12

CJSR

Sidewall junction capacitance at V=VR

Farad/Meter2

1.0e-12

DTA

Difference between diode and circuit temperatures

°C

0.0

JSDBR

Bottom saturation-current density due to diffusion from back-contact

Amp/Meter2

1.0e-3

JSDGR

Gate-edge saturation-current density due to diffusion from back-contact

Amp/Meter2

1.0e-3

JSDSR

Sidewall saturation-current density due to diffusion from back-contact

Amp/Meter2

1.0e-3

JSGBR

Bottom saturation-current density due to generating holes at V=VR

Amp/Meter2

1.0e-3

JSGGR

Gate-edge saturation-current density due to generating holes at V=VR

Amp/Meter2

1.0e-3

JSGSR

Sidewall saturation-current density due to generating holes at V=VR

Amp/Meter2

1.0e-3

LG (PGATE)

Length of sidewall in diffusion area which is under the gate

None

1.0e-6

LS (PERI)

Length of sidewall in diffusion area which is not under the gate

None

1.0e-6

M

Multiplier: simulates parallel diodes

None

1.0

NB

Emission coefficient, bottom forward current

None

1.0

NG

Emission coefficient, gate-edge forward current

None

1.0

NS

Emission coefficient, sidewall forward current

None

1.0

PB (VJ, PHI, PHA)

Bottom junction grading coefficient

None

0.40

PG

Gate-edge junction grading coefficient

None

0.40

PS

Sidewall junction grading coefficient

None

0.40

SCALM

Scale factor for model parameters

None

1.0

TNOM (TREF)

Circuit temperature

°C

25.0

TR

Temperature used to simulate parameter values

°C

25.0

VB (BV, VAR, VRB)

Reverse breakdown voltage

Volt

0.9

VDBR

Diffusion voltage of the bottom junction at Temp=TR

Volt

1.00

VDGR

Diffusion voltage of the gate-edge junction at Temp=TR

Volt

1.00

VDSR

Diffusion voltage of the sidewall junction at Temp=TR

Volt

1.00

VR

Voltage used to simulate parameter values

Volt

0.0

 

Junction Capacitance Diode Model Netlist Example

.MODEL DJUNCAP0 D level=4 AB=2.5e-013 LS=2e-006 LG=0

+ m=1 TR=27 VR=0 JSGBR=1.892E-007 JSDBR=1.798E-008

+ JSGSR=2.905E-011 JSDSR-1.198E-014 JSGGR=4.15E-011

+ JSDGR=1.628E-014 NB=1 NS=1 NG=1 CJBR=0.000767

+ CJSR=1E-010 CJGR=3.24E-010 VDBR=0.497 VDGR=0.3581

+ PB=0.315 PS=0.1 PG=0.2433

 

 



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