Model Parameter

Description

Unit

Default

LEVEL

3 is required to select the geometric diode model

None

1 (default if LEVEL parameter is omitted)

AREA

Area of the diode

Meter²

1.0

EXPLI

Explosion current (linear threshold)

Amp/Meter²

1.0e+15

IB (IBV)

Current at breakdown voltage

Amp/Meter²

1.0e-3

IK (IKF, JBF)

Forward-knee current (intersection of high-current and low-current slopes)

Amp/Meter²

0.0

IKR (JBR)

Reverse-knee current (intersection of high-current and low-current slopes)

Amp/Meter²

0.0

IS (JS)

Saturation current

Amp/Meter²

0.0

JSW (ISP, ISW)

Sidewall saturation current normalized to junction periphery

Amp/Meter

0.0

L

Diode length

Meter

0.0

M

Multiplier: simulates parallel diodes

None

1.0

N

Emission coefficient

None

1.0

PJ

Junction periphery

Meter

0.0

RS

Series resistance

Ohm/Meter²

0.0

SCALM

Scaling factor

None

1.0

SHRINK

Shrink factor for diode length

None

1.0

TNOM

Nominal temperature

°C

25.0

VB (BV, VAR, VRB)

Reverse breakdown voltage. Default 0.0 represents infinite breakdown voltage

Volt

0.0

W

Diode width

Meter

0.0

XW

Mask and etch correction factor

Meter

0.0

Model Parameter

Description

Unit

Default

CJ (CJA, CJO)

Junction capacitance at zero bias, normalized to junction area

Farad/Meter²

0.0

CJP (CJSW)

Junction capacitance at zero bias, normalized to junction periphery

Farad/Meter

0.0

DCAP

Diode depletion capacitance equation selector

None

2

EXA (MJ)

Grading coefficient at area junction

None

0.5

FC

Coefficient used in forward-bias depletion area calculation

None

0.5

FCS

Coefficient used in forward-bias depletion periphery calculation

None

0.5

MJSW (EXP)

Grading coefficient at periphery junction

None

0.33

PB (PHI, VJ, PHA)

Contact potential at area junction

Volt

0.8

PHP

Contact potential at periphery junction

Volt

PB

TT

Transit time

Second

0.0

Model Parameter

Description

Unit

Default

XM

Correction factor for metal masking and etching effects.

Meter

0.0

XOI

Polysilicon to bulk oxide thickness

Å

1.0e+4

XOM

Metal to bulk oxide thickness

Å

1.0e+4

XP

Correction factor for polysilicon masking and etching effects.

Meter

0.0

Model Parameter

Description

Unit

Default

AF

Flicker noise exponent

None

1.0

KF

Flicker noise coefficient

None

0.0

Model Parameter

Description

Unit

Default

CTA (CTC)

Temperature coefficient for area junction capacitance CJ (TLEVC = 1)

°C^-1

0.0

CTP

Temperature coefficient for periphery junction capacitance CJP (TLEVC = 1)

°C^-1

0.0

EG

Energy gap for pn junction diode

electron-Volt

TLEV=0 or 1: 1.11

TLEV=2: 1.16

GAP1

First band gap correction factor

electron-Volt/°C

7.02e-4

GAP2

Second band gap correction factor

°C

1108

TCV

Temperature coefficient of breakdown voltage

°C^-1

0.0

TLEV

Diode temperature equation selector

None

0

TLEVC

Level selector for diode temperature, junction capacitance, and contact potential calculations

None

0

TM1

1st-order MJ temperature coefficient

°C^-1

0.0

TM2

2nd-order MJ temperature coefficient

°C^-2

0.0

TPB (TVJ)

PB temperature coefficient
(TLEVC = 1 or 2)

Volt/°C

0.0

TPHP

PHP temperature coefficient
(TLEVC = 1 or 2)

Volt/°C

0.0

TREF

Model reference temperature

°C

25

TRS

Resistance temperature coefficient

°C^-1

0.0

TTT1

1st-order TT temperature coefficient

°C^-1

0.0

TTT2

2nd-order TT temperature coefficient

°C^-2

0.0

XTI

Saturation current temperature exponent

3.0