Level 13 BJT Model Basic
Parameters
Model Parameter
|
Description
|
Unit
|
Default
|
LEVEL=13
|
Selects level 13 HiCUM L0 BJT model
|
None
|
1
|
MCF
|
Base-collector depletion charge
weighting factor for Qjci in HBTs
|
|
1.0
|
CJCI0
|
Internal base-collector zero-bias
depletion capacitance
|
Farad
|
1e-20
|
VDCI
|
Internal base-collector built-in
potential
|
Volt
|
0.7
|
ZCI
|
Internal base-collector grading
coefficient
|
|
0.333
|
VPTCI
|
Internal base-collector punch-through
voltage
|
Volt
|
100.0
|
T0
|
Low-current forward transit time
at Vbc=0
|
Second
|
0.0
|
DT0H
|
Time constant for base and base-collector
space charge layer width modulation
|
Second
|
0.0
|
TBVL
|
Time constant for modelling carrier
jam at low Vce
|
Second
|
0.0
|
TEF0
|
Neutral emitter storage time
|
Second
|
0.0
|
GTE
|
Exponent factor for current dependence
of TEF0
|
|
1.0
|
THCS
|
Saturation time constant at high
current densities
|
Second
|
0.0
|
AHC
|
Smoothing factor for current dependence
of base-collector transit time
|
|
0.1
|
RCI0
|
Internal collector resistance at
low electric field
|
Ohm
|
150.0
|
VLIM
|
Voltage separating ohmic and saturation
velocity regime
|
Volt
|
0.5
|
VPT
|
Collector punch-through voltage
|
Volt
|
100.0
|
VCES
|
Internal collector-emitter saturation
voltage
|
Volt
|
0.1
|
TR
|
Storage time for inverse operation
|
Second
|
0.0
|
RBI0
|
Zero-bias internal base resistance
|
Ohm
|
0.0
|
FGEO
|
Factor for geometry dependence
of emitter current crowding
|
|
0.656
|
CJCX0
|
External base-collector zero-bias
depletion capacitance
|
Farad
|
1e-20
|
VDCX
|
External base-collector built-in
potential
|
Volt
|
0.7
|
ZCX
|
External base-collector grading
coefficient
|
|
0.333
|
VPTCX
|
External base-collector punch-through
voltage
|
Volt
|
100.0
|
FBC
|
Partitioning factor for external
base-collector capacitance
|
|
1.0
|
RBX
|
External base series resistance
|
Ohm
|
0.0
|
RE
|
Emitter series resistance
|
Ohm
|
0.0
|
RCX
|
External collector series resistance
|
Ohm
|
0.0
|
ISCS
|
Saturation current of collector-substrate
diode
|
Ampere
|
0.0
|
MSC
|
Ideality factor of collector substrate
diode current
|
|
1.0
|
CJS0
|
Collector-substrate zero-bias depletion
capacitance
|
Farad
|
1.0e-20
|
VDS
|
Collector-substrate built-in potential
|
Volt
|
0.3
|
ZS
|
Collector-substrate grading coefficient
|
|
0.3
|
VPTS
|
Collector-substrate punch-through
voltage
|
Volt
|
100.0
|
KF
|
Flicker noise coefficient
|
|
0.0
|
AF
|
Flicker noise exponent factor
|
|
2.0
|
VGB
|
Band-gap voltage extrapolated to
0°K
|
Volt
|
1.2
|
ALT0
|
First-order relative temperature
coefficient of parameter T0
|
1/°K
|
0.0
|
KT0
|
Second-order relative temperature
coefficient of parameter T0
|
1/°K2
|
0.0
|
ZETACI
|
Temperature coefficient for RCI0
|
|
0.0
|
ALVS
|
Relative temperature coefficient
of saturation drift velocity
|
1/°K
|
0.0
|
ALCES
|
Relative temperature coefficient
of VCES
|
1/°K
|
0.0
|
ZETARBI
|
Temperature exponent of internal
base resistance
|
|
0.0
|
ZETARBX
|
Temperature exponent ofexternal
base resistance
|
|
0.0
|
ZETARCX
|
Temperature exponent of external
collector resistance
|
|
0.0
|
ZETARE
|
Temperature exponent of emitter
resistance
|
|
0.0
|
ALKAV
|
Relative temperature coefficient
for avalanche breakdown KAVL
|
1/°K
|
0.0
|
ALEAV
|
Relative temperature coefficient
for avalanche breakdown EAVL
|
1/°K
|
0.0
|
TNOM
|
Temperature at which parameters
are specified
|
°C
|
27.0
|
RTH
|
Thermal resistance
|
°K/Watt
|
0.0
|
CTH
|
Thermal capacitance
|
Watt-second/°K
|
0.0
|
MINR
|
Minimum resistance
|
Ohm
|
0.001
|
IS
|
Ideal saturation current
|
Ampere
|
1.0e-16
|
MCR
|
Non-ideality coefficient of forward
collector current
|
|
1.0
|
VEF
|
Forward Early voltage (normalization
voltage)
|
Volt
|
|
IQF
|
Forward DC high-injection roll-off
current
|
Ampere
|
|
IQR
|
Inverse DC high-injection roll-off
current
|
Ampere
|
|
IQFH
|
High-injection correction current
|
Ampere
|
|
TFH
|
High-injection correction factor
|
|
|
IBES
|
Base-emitter saturation current
|
Ampere
|
1.0e-18
|
MBE
|
Base-emitter non-ideality factor
|
|
1.0
|
IRES
|
Base-emitter recombination saturation
current
|
Ampere
|
0.0
|
MRE
|
Base-emitter recombination non-ideality
factor
|
|
2.0
|
IBCS
|
Base-collector saturation current
|
Ampere
|
0.0
|
MBC
|
Base-collector non-ideality factor
|
|
1.0
|
CJE0
|
Zero-bias base-emitter depletion
capacitance
|
Farad
|
1.0e-20
|
VDE
|
Base-emitter built-in voltage
|
Volt
|
0.9
|
ZE
|
Base-emitter exponent factor
|
|
0.5
|
AJE
|
Ratio of maximum to zero-bias value
|
|
2.5
|
VR0E
|
Forward Early voltage (normalization
voltage)
|
Volt
|
2.5
|
VROC
|
Forward Early voltage (normalization
voltage)
|
Volt
|
|
CBCPAR
|
Collector-base isolation (overlap)
capacitance
|
Farad
|
0.0
|
CBEPAR
|
Emitter-base oxide capacitance
|
Farad
|
0.0
|
EAVL
|
Exponent factor for collector-base
avalanche effect
|
|
0.0
|
KAVL
|
Prefactor for collector-base avalanche
effect
|
|
0.0
|
VGE
|
Effective emitter bandgap voltage
|
Volt
|
1.17
|
VGC
|
Effective collector bandgap voltage
|
Volt
|
1.17
|
VGS
|
Effective substrate bandgap voltage
|
Volt
|
1.17
|
F1VG
|
Coefficient K1 in temperature-dependent
bandgap equation
|
|
-1.02377e-4
|
F2VG
|
Coefficient K2 in temperature-dependent
bandgap equation
|
|
4.3215e-4
|
ZETACT
|
Exponent coefficient in transfer
current temperature dependence
|
|
3.0
|
ZETABET
|
Exponent coefficient in Base-emitter
junction current temperature dependence
|
|
3.5
|
ITSS
|
Substrate transistor transfer saturation
current
|
Ampere
|
0.0
|
MSF
|
Substrate transistor transfer current
non-ideality factor
|
|
1.0
|
FLSH
|
Flag for self-heating
|
None
|
0.0
|