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Nexxim Simulator >
Nexxim Component Models >
BJTs >
   Level 11 UCSD HBT Model       

Level 11 UCSD HBT Model

Netlist Form for Level 11 HBT Model

The .MODEL statement for the level 11 UCSD HBT specifies values for one or more model parameters.

.MODEL modelname NPN LEVEL=11 [modelparameter=]val] ...

or

.MODEL modelname PNP LEVEL=11 [modelparameter=]val] ...

 


Level 11 UCSD HBT Model Parameters

Model Parameter

Description

Unit

Default

LEVEL

11 is required to select the Level 11 HBT model

None

1 (default if LEVEL parameter is omitted)

AFN

Base-emitter flicker noise current exponent

None

1

BF

Forward ideal current gain

None

10000

BFN

Base-emitter flicker noise frequency exponent

None

1

BKDN

Flag to include base-collector breakdown

None

0

BR

Reverse ideal current gain

None

10000

BVC

Collector-base breakdown voltage BVcbo

Volt

1000

CCMIN

Minimum value of intrinsic base-collector junction capacitance (Cj)

Farad

0.0

CEMIN

Minimum base-emitter capacitance

Farad

0

CJC

Intrinsic base-collector depletion capacitance as zero bias

Farad

0

CJCX

Extrinsic base-collector depletion capacitance as zero bias

Farad

0

CJE

Base-emitter depletion capacitance as zero bias

Farad

0

CJS

Collector-substrate depletion capacitance at zero bias

Farad

0.0

CTH

Thermal capacitance of device

°C/Joule

0

CXMIN

Minimum value of extrinsic base-collector junction capacitance (Cj)

Farad

0.0

DTMAX

Maximum expected temperature rise above heatsink

°C

1000

EAA

Activation energy for ISE temperature dependence

Volt

0.0

EAB

Activation energy for ISC temperature dependence

Volt

0.0

EAC

Activation energy for ISB temperature dependence

Volt

0.0

EAE

Activation energy for ISA temperature dependence

Volt

0.0

EAX

Activation energy for ISEX temperature dependence

Volt

0.0

EG

Activation energy for IS temperature dependence

Volt

1.5

FA

Factor for specification of avalanche voltage

None

0.9

FC

Factor for start of high-bias base-collector junction capacitance (Cj) approximation

None

0.8

FCE

Factor for start of high-bias base-emitter junction capacitance (Cj) approximation

None

0.8

FEX

Factor to determine excess phase

None

0.0

ICRIT0

Critical current for intrinsic junction capacitance (Cj) variation

Amp

1.0e+3

ICS

Saturation value for collector-substrate current

Amp

1.0e-30

IK

Knee current for DC high-injection effect

Amp

1.0e+10

IKRK

Characteristic current for Kirk effect

Amp

1.0e3

IS

Saturation value for forward collector current

Amp

1.0e-25

ISA

Collector current emitter-base barrier limiting current

Amp

1.0e+10

ISB

Collector current base-collector barrier limiting current

Amp

1.0e+10

ISC

Saturation value for intrinsic base-collector junction current

Amp

1.0e-30

ISCX

Saturation value for extrinsic base-collector junction current

Amp

1.0e-30

ISE

Saturation value for non-ideal forward base current

Amp

1.0e-30

ISEX

Saturation value for emitter leakage diode

Amp

1.0e-30

ITC

Characteristic current for TFC

Amp

0.0

ITC2

Characteristic current for TFC

Amp

0.0

KFN

Base-emitter flicker noise constant

None

0.0

MJC

Exponent for voltage variation of intrinsic base-collector junction capacitance (Cj)

None

0.33

MJCX

Exponent for voltage variation of extrinsic base-collector junction capacitance (Cj)

None

0.33

MJE

Exponent for voltage variation of base-emitter junction capacitance (Cj)

None

0.5

MJS

Exponent for voltage variation of intrinsic collector-substrate junction capacitance (Cj)

None

0.5

NA

Collector current emitter-base barrier ideality factor

None

2

NB

Collector current base-collector barrier ideality factor

None

2

NBC

Exponent for base-collector multiplication factor vs voltage

None

8

NC

Ideality factor for intrinsic base-collector junction current

None

2

NCS

Ideality factor for collector-substrate current

None

2

NCX

Ideality factor for extrinsic base-collector junction current

None

2

NE

Ideality factor for non-ideal forward base current

None

2

NEX

Ideality factor for emitter leakage diode

None

2

NF

Ideality factor for forward collector current

None

1.0

NR

Ideality factor for reverse collector current

None

1.0

RBI

Intrinsic base resistance

Ohm

0

RBX

Extrinsic base resistance

Ohm

0

RCI

Intrinsic collector resistance

Ohm

0

RCX

Extrinsic collector resistance

Ohm

0

RE

Emitter resistance

Ohm

0

REX

Extrinsic emitter leakage diode series resistance

Ohm

0

RTH

Thermal resistance from device to thermal ground

°C/Watt

0.0

SELFT

Flag to enable self-heating effect calculations (0 = disable self-heating,
1 = enable self-heating)

None

0

TBCXS

Excess base-collector heterojunction transit time

Second

0

TBEXS

Excess base-emitter heterojunction transit time

Second

0

TFB

Base forward transit time

Second

0

TFC0

Collector forward transit time

Second

0

TKRK

Forward transit time for Kirk effect

Second

0.0

TNC

NC temperature dependence coefficient

None

0.0

TNE

NE temperature dependence coefficient

None

0.0

TNEX

NEX temperature dependence coefficient

None

0.0

TNOM (TREF)

Reference temperature

°C

27

TR

Reverse charge storage time, intrinsic base-collector diode

Second

0.0

TRX

Reverse charge storage time, extrinsic base-collector diode

Second

0.0

TVJC

VJC temperature dependence coefficient

Volt/°C

0.0

TVJCX

VJCX temperature dependence coefficient

Volt/°C

0.0

TVJE

VJE temperature dependence coefficient

Volt/°C

0.0

TVJS

VJS temperature dependence coefficient

Volt/°C

0.0

VAF

Forward early voltage

Volt

1000

VAR

Reverse early voltage

Volt

1000

VJC

Intrinsic base-collector diode built-in potential for junction capacitance (Cj) estimation

Volt

1.4

VJCX

Extrinsic base-collector diode built-in potential for junction capacitance (Cj) estimation

Volt

1.4

VJE

Base-emitter diode built-in potential for junction capacitance (Cj) estimation

Volt

1.6

VJS

Intrinsic collector-substrate diode built-in potential for junction capacitance (Cj) estimation

Volt

1.4

VKRK

Characteristic voltage for Kirk effect

Volt

1.0e3

VTC

Characteristic voltage for TFC

Volt

1.0e3

XCJC

Factor for partitioning extrinsic base-collector junction capacitance (Cj)

None

1.0

XRB

RB temperature dependence exponent

None

0

XRC

RC temperature dependence exponent

None

0

XRE

RE temperature dependence exponent

None

0

XREX

REX temperature dependence exponent

None

0

XRT

Temperature exponent of RTH

None

0.0

XTB

Beta temperature dependence exponent

None

2

XTI

IS temperature dependence exponent

None

2

XTIKRK

IKRK temperature dependence exponent

None

0

XTITC

ITC temperature dependence exponent

None

0

XTITC2

ITC2 temperature dependence exponent

None

0

XTTF

TF temperature dependence exponent

None

0

XTTKRK

TKRK temperature dependence exponent

None

0

XTVKRK

VKRK temperature dependence exponent

None

0


Level 11 BJT Model Netlist Example

.MODEL bjthbt11 PNP LEVEL=11




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