Level 10 BJT Model Parameters
Model Parameter
|
Description
|
Unit
|
Default
|
LEVEL=10
|
Selects level 10 Philips MODELLA
BJT model
|
None
|
1
|
AE
|
Temperature coefficient of the
resistivity of BF
|
None
|
4.48
|
AF
|
Flicker noise exponent
|
None
|
1.0
|
BF
|
Ideal forward common-emitter current
gain
|
None
|
131.0
|
BR
|
Ideal reverse common-emitter current
gain
|
None
|
25.0
|
CJC
|
Zero-bias collector-base depletion
capacitance
|
Farad
|
3.90e-13
|
CJE
|
Zero-bias emitter-base depletion
capacitance
|
Farad
|
6.10e-14
|
CJS
|
Zero-bias substrate-base depletion
capacitance
|
Farad
|
1.30e-12
|
EAFL
|
Early voltage of the lateral forward
current component at zero collector-base bias
|
Volt
|
20.50
|
EAFV
|
Early voltage of the vertical forward
current component at zero collector-base bias
|
Volt
|
75.0
|
EARL
|
Early voltage of the lateral reverse
current component at zero collector-base bias
|
Volt
|
13.10
|
EARV
|
Early voltage of the vertical reverse
current component at zero collector-base bias
|
Volt
|
104.0
|
EXPHI
|
Excess phase shift
|
Radians
|
0.0
|
IBF
|
Saturation current of the non-ideal
forward base current
|
Amp
|
2.60e-14
|
IBR
|
Saturation current of the non-ideal
reverse base current
|
Amp
|
1.20e-13
|
IK
|
High-injection knee current
|
Amp
|
1.10e-4
|
IS
|
Collector-emitter saturation current
|
Amp
|
1.80e-16
|
ISS
|
Substrate-base saturation current
|
Amp
|
4.00e-13
|
KF
|
Flicker noise coefficient
|
None
|
0.00
|
PC
|
Collector-base grading coefficient
|
None
|
0.36
|
PE
|
Emitter-base grading coefficient
|
None
|
0.30
|
PS
|
Substrate-base grading coefficient
|
None
|
0.35
|
RBCC
|
Constant part of base resistance
RBC
|
Ohm
|
10.00
|
RBCV
|
Variable part of base resistance
RBC at zero bias
|
Ohm
|
10.00
|
RBEC
|
Constant part of base resistance
RBE
|
Ohm
|
10.00
|
RBEV
|
Variable part of base resistance
RBE at zero bias
|
Ohm
|
50.00
|
RCEX
|
External part of collector resistance
|
Ohm
|
5.00
|
RCIN
|
Internal part of collector resistance
|
Ohm
|
47.00
|
REEX
|
External part of emitter resistance
|
Ohm
|
27.00
|
REIN
|
Internal part of emitter resistance
|
Ohm
|
66.00
|
RSB
|
Substrate-base leakage resistance
|
Ohm
|
1.00e+15
|
SNB
|
Temperature coefficient of the
epitaxial base electron mobility
|
None
|
2.60
|
SNBN
|
Temperature coefficient of buried
layer electron mobility
|
None
|
0.30
|
SPB
|
Temperature coefficient of the
epitaxial base hole mobility
|
None
|
2.853
|
SPC
|
Temperature coefficient of collector
hole mobility
|
None
|
0.73
|
SPE
|
Temperature coefficient of emitter
hole mobility
|
None
|
0.73
|
SX
|
Temperature coefficient of combined
minority carrier mobilities in emitter and buried layer
|
None
|
1.00
|
TFN
|
Low-injection forward transit time
due to charge stored in the emitter and the buried layer under the emitter
|
Second
|
2.00e-10
|
TFVR
|
Low-injection forward transit time
due to charge stored in the epilayer under the emitter
|
Second
|
3.00e-8
|
TLAT
|
Low-injection forward and reverse
transit time of charge stored in the epilayer between emitter and collector
|
Second
|
2.40e-9
|
TNOM
(TREF)
|
Nominal circuit temperature
|
°C
|
25
|
TRN
|
Low-injection reverse transit time
due to charge stored in the collector and the buried layer under the
collector
|
Second
|
3.00e-9
|
TRVR
|
Low-injection reverse transit time
due to charge stored in the epilayer under the collector
|
Second
|
1.00e-9
|
VDC
|
Collector-base diffusion voltage
|
Volt
|
0.57
|
VDE
|
Emitter-base diffusion voltage
|
Volt
|
0.52
|
VDS
|
Substrate-base diffusion voltage
|
Volt
|
0.52
|
VGB
|
Bandgap voltage of the base between
emitter and collector
|
Volt
|
1.206
|
VGCB
|
Bandgap voltage of the collector-base
depletion region
|
Volt
|
1.206
|
VGE
|
Bandgap voltage of the emitter
|
Volt
|
1.206
|
VGEB
|
Bandgap voltage of the emitter-base
depletion region
|
Volt
|
1.206
|
VGJE
|
Bandgap voltage recombination emitter-base
junction
|
Volt
|
1.123
|
VGSB
|
Bandgap voltage of the substrate-base
depletion region
|
Volt
|
1.206
|
VLF
|
Cross-over voltage of non-ideal
forward base current
|
Volt
|
0.54
|
VLR
|
Cross-over voltage of non-ideal
reverse base current
|
Volt
|
0.48
|
XCS
|
Ratio between saturation currents
of c-b-s transistor and c-b-e transistor
|
None
|
3.00
|
XES
|
Ratio between saturation currents
of e-b-s transistor and e-b-c transistor
|
None
|
2.70e-3
|
XHCS
|
Fraction of substrate current of
c-b-s transistor subject to high injection
|
None
|
1.00
|
XHES
|
Fraction of substrate current of
e-b-s transistor subject to high injection
|
None
|
0.70
|
XIFV
|
Vertical fraction of forward current
|
None
|
0.43
|
XIRV
|
Vertical fraction of reverse current
|
None
|
0.43
|