Model Parameter

Description

Unit

Default

LEVEL

4 is required to select the junction capacitance diode model

None

1 (default if LEVEL parameter is omitted)

AREA

Diffusion area of the diode

Meter²

1.0

AB

Diffusion area of the diode

Meter²

1.0e-12

CJBR

Bottom junction capacitance at V=VR

Farad/Meter²

1.0e-12

CJGR

Gate-edge junction capacitance at V=VR

Farad/Meter²

1.0e-12

CJSR

Sidewall junction capacitance at V=VR

Farad/Meter²

1.0e-12

DTA

Difference between diode and circuit temperatures

°C

0.0

JSDBR

Bottom saturation-current density due to diffusion from back-contact

Amp/Meter²

1.0e-3

JSDGR

Gate-edge saturation-current density due to diffusion from back-contact

Amp/Meter²

1.0e-3

JSDSR

Sidewall saturation-current density due to diffusion from back-contact

Amp/Meter²

1.0e-3

JSGBR

Bottom saturation-current density due to generating holes at V=VR

Amp/Meter²

1.0e-3

JSGGR

Gate-edge saturation-current density due to generating holes at V=VR

Amp/Meter²

1.0e-3

JSGSR

Sidewall saturation-current density due to generating holes at V=VR

Amp/Meter²

1.0e-3

LG (PGATE)

Length of sidewall in diffusion area which is under the gate

None

1.0e-6

LS (PERI)

Length of sidewall in diffusion area which is not under the gate

None

1.0e-6

M

Multiplier: simulates parallel diodes

None

1.0

NB

Emission coefficient, bottom forward current

None

1.0

NG

Emission coefficient, gate-edge forward current

None

1.0

NS

Emission coefficient, sidewall forward current

None

1.0

PB (VJ, PHI, PHA)

Bottom junction grading coefficient

None

0.40

PG

Gate-edge junction grading coefficient

None

0.40

PS

Sidewall junction grading coefficient

None

0.40

SCALM

Scale factor for model parameters

None

1.0

TNOM (TREF)

Circuit temperature

°C

25.0

TR

Temperature used to simulate parameter values

°C

25.0

VB (BV, VAR, VRB)

Reverse breakdown voltage

Volt

0.9

VDBR

Diffusion voltage of the bottom junction at Temp=TR

Volt

1.00

VDGR

Diffusion voltage of the gate-edge junction at Temp=TR

Volt

1.00

VDSR

Diffusion voltage of the sidewall junction at Temp=TR

Volt

1.00

VR

Voltage used to simulate parameter values

Volt

0.0