淘宝官方店推荐课程在线工具联系方式关于我们

	微波射频仿真设计 Ansoft Designer 中文培训教程 \| HFSS视频培训教程套装
	Agilent ADS 视频培训教程 \| CST微波工作室视频教程 \| AWR Microwave Office

首页 >> Ansoft Designer >> Ansoft Designer在线帮助文档

Ansoft Designer / Ansys Designer 在线帮助文档：

Nexxim Simulator >
Nexxim Component Models >
MOSFET Levels 1 through 27 >
Advanced IDS MOSFET Model, Level 8

Advanced IDS MOSFET Model, Level 8

The syntax for a Level 8 MOSFET model is:

.MODEL modelname NMOS LEVEL=8 [(][parameter=val] ... [)]

.MODEL modelname PMOS LEVEL=8 [(][parameter=val] ... [)]

modelname is the name used by MOSFET instances to refer to this .MODEL statement. The LEVEL=8 entry selects the advanced IDS Grove-Frohman MOSFET model.

**Level 8 MOSFET Basic Model Parameters**
Model Parameter	Description	Unit	Default
LEVEL	8 is required to select the advanced IDS MOSFET model	Integer	1 (default if LEVEL parameter is omitted)
ACM	Area calculation method selector 0 = SPICE model, parameters depend on element areas 1 = ASPEC model, parameters depend on element width 2 = HSPICE model (combines ACM 0 and 1, extensions for lightly-doped drain technology 3 = HSPICE method, ACM 2 plus shared sources and drains and gate-edge source/drain peripheral capacitances	None	0
ALPHA	Impact ionization current coefficient	None	0.0
CAPOP	Capacitance model selector	Integer	2
COX (CO)	Oxide capacitance per unit of gate area	Farad/Meter²	Calculated
ECRIT (ESAT)	Critical electric field for carrier velocity saturation. Zero represents an infinite value. Grove: electrons 6e+4, holes 2.4e+4	Volt-cm^-1	0.0
IIRAT	Portion of impact ionization current that goes to source	None	0.0
KP (BET, BETA)	Intrinsic transconductance parameter.	Amp/Volt²	Calculated
LALPHA	Alpha length sensitivity	mMeter/Volt	0.0
LRD	Drain resistance length sensitivity	Ohm/Meter	0.0
LRS	Source resistance length sensitivity	Ohm/Meter	0.0
LVCR	VCR length sensitivity	mMeter/Volt	0.0
PRD	Drain resistance area sensitivity	Ohm/Meter²	0.0
PRS	Source resistance area sensitivity	Ohm/Meter²	0.0
RD	Drain ohmic resistance	Ohm	0.0
RDC	Additional drain resistance due to contact resistance	Ohm	0.0
RS	Source ohmic resistance	Ohm	0.0
RSC	Additional source resistance due to contact resistance	Ohm	0.0
RSH (RL)	Drain and source diffusion sheet resistance	Ohm/Square	0.0
SCALM	Model parameter scale factor (also an option for .OPTIONs statement)	None	1.0
SNVB	Slope of doping concentration versus vsb	1e6/Volt-cm³	0.0
TNOM	Nominal device temperature	°C	25
UPDATE	Update selector for parasitics model	None	0.0
VCR	Critical voltage	Volt	0.0
VMAX (VMX, VSAT)	Maximum carrier drift velocity. Zero represents an infinite value.	Meter/second	0.0
WALPHA	Alpha width sensitivity	mMeter/Volt	0.0
WRD	Drain resistance width sensitivity	Ohm/Meter	0.0
WRS	Source resistance width sensitivity	Ohm/Meter	0.0
WVCR	VCR width sensitivity	mMeter/Volt	0.0

**Level 8 MOSFET Threshold Voltage Model Parameters**
Model Parameter	Description	Unit	Default
DELTA	Narrow width factor for adjusting threshold	None	0.0
DELVTO	Threshold voltage shift at zero bias	Volt	0.0
ETA	Drain-induced barrier-lowering (DIBL) effect coefficient for threshold voltage	None	0.0
GAMMA	Body effect factor	Volt^½	Calculated
NFS (DFS, NF, DNF)	Fast surface state density	cm^-2´ Volt^-1	0.0
NGATE	Polysilicon gate doping	1/cm³	No default. If NGATE £ 0.0, it is set to 1.0e+18
NSS	Surface state density	cm^-2	0.0
TPG (TPS)	Type of gate material 0 = Aluminum gate 1 = Polysilicon gate same as source-drain diffusion -1 = Polysilicon gate opposite to source-drain diffusion	None	1
VTO (VT)	Zero-bias threshold voltage	Volt	Calculated

**Level 8 MOSFET Mobility Model Parameters**
Model Parameter	Description	Unit	Default
MOB	Mobility equation selector 0 = Level 2 model and equations, using vde instead of vds 3 = Temperature-dependent 6 = UEXP-dependent (Level 8) 7 = NSUB-dependent	Integer	6
THETA	Mobility modulation for MOB=7	Volt^-1	0.0
UCRIT	Critical field for mobility degradation (MOB = 6)	UEXP > 0: Volt/cm UEXP £ 0: Volt^-1	1.0e+4
UEXP (F2)	Critical field exponent for surface mobility degradation empirical formula	None	0.0
UO (UB, UBO)	Low-field bulk mobility	Centimeter²/Volt-Second	If KP is entered, UO is calculated from KP Else, NMOS = 600e-4 PMOS = 250e-4
UTRA	Transverse field coefficient Nonzero values for UTRA can result in negative resistance regions at the onset of saturation.	None	0.0

**Level 8 MOSFET Channel Length Modulation Model Parameters**
Model Parameter	Description	Unit	Default
CLM	Channel length modulation 6 = SPICE equations 7 = Intersil equations 8 = Modified Intersil equations	Integer	7
A1	CLM = 8: Channel length modulation exponent	None	0.2
LAMBDA (LAM, LA)	Channel length modulation coefficient	None	0.0
LAM1	Channel length modulation length correction	Meter^-1	0.0

**Level 8 MOSFET Gate Overlap Capacitance Model Parameters**
Model Parameter	Description	Unit	Default
CGBO (CGB)	Gate-bulk overlap capacitance per meter channel length	Farad/Meter	0.0
CGDO (CGD, C2)	Gate-drain overlap capacitance per meter channel width	Farad/Meter	Calculated
CGSO (CGS, C1)	Gate-source overlap capacitance per meter channel width	Farad/Meter	Calculated
METO	Fringing field factor for gate-to-source and gate-to-drain overlap capacitance calculation	Meter	0.0

**Level 8 MOSFET MOS Geometry Model Parameters**
Model Parameter	Description	Unit	Default
DEL	Channel length reduction	Meter	0.0
GEO	Layout geometry 0 = Drain and source not shared 1 = Drain shared 2 = Source shared 3 = Drain and source shared	None	0
HDIF	Length of heavily-doped diffusion region, from contact to lightly-doped region (ACM = 2 or 3)	Meter	0.0
LD (DLAT, LATD)	Lateral diffusion into channel from source and drain	Meter	If neither LD nor XJ is specified: LD = 0.0 If XJ specified but LD not specified: LD = 0.75 ´ XJ
LDIF	Length of lightly-doped diffusion adjacent to gate (ACM = 1 or 2)	Meter	0.0
LDAC	Lateral diffusion for AC analysis	Meter	None
LMLT	Length shrink factor	None	1.0
LREF	Channel length reference	Meter	0.0
TOX	Oxide thickness	Meter	1.0e-7
WD	Lateral diffusion into channel from bulk along width	Meter	0.0
WMLT	Diffusion layer and width reduction factor	None	1.0
WREF	Channel width reference	Meter	0.0
XJ	Metallurgical junction depth	Meter	0.0
XL (DL, LDEL)	Length bias factor for mask and etch effects	Meter	0.0
XLREF	Channel length reference bias factor for mask and etch effects	Meter	0.0
XW (DW, WDEL)	Width bias factor for mask and etch effects	Meter	0.0
XWREF	Channel width reference bias factor for mask and etch effects	Meter	0.0

**Level 8 MOSFET Noise Model Parameters**
Model Parameter	Description	Unit	Default
AF	Flicker noise exponent	None	1.0
GDSNOI	Channel thermal noise coefficient (for NLEV = 3)	None	1.0
KF	Flicker noise coefficient	None	0.0
NLEV	Noise equation selector	None	2

**Level 8 MOSFET DC Model Parameters**
Model Parameter	Description	Unit	Default
IS	Bulk junction saturation current	Amp	1.0e-14
JS	Bulk junction saturation current density	Amp/Meter²	0.0
JSW	Sidewall bulk junction saturation current	Amp/Meter	0.0
N	Emission coefficient	None	1.0
NDS	Reverse bias slope coefficient	None	1.0
VNDS	Reverse diode current transition point	Volt	-1.0

**Level 8 MOSFET Capacitance Model Parameters**
Model Parameter	Description	Unit	Default
CBD	Zero-bias bulk-drain junction capacitance	Farad	0.0
CBS	Zero-bias bulk-source junction capacitance	Farad	0.0
CJ (CJB, CSB, CJA)	Zero-bias bulk junction bottom capacitance	Farad/Meter²	Calculated
CJGATE	Zero-bias gate-edge sidewall bulk junction capacitance (ACM = 3)	Farad/Meter	CJSW
CJSW (CJP)	Zero-bias bulk junction sidewall capacitance	Farad/Meter	0.0
FC	Forward-bias depletion coefficient for capacitance	None	0.0
MJ (EXA, EXJ, EXS, EXD)	Bulk junction capacitance grading coefficient	None	0.5
MJSW	Bulk junction sidewall capacitance grading coefficient	None	0.33
NSUB (DNB, NB)	Substrate doping	1/cm³	1.0e+15
PB (PHA, PHS, PHD)	Bulk junction contact potential	Volt	0.8
PHI	Surface inversion potential	Volt	Calculated
PHP	Bulk sidewall junction contact potential	Volt	PB
TT	Transit time	Second	0.0

**Level 8 MOSFET Temperature Effect Model Parameters**
Model Parameter	Description	Unit	Default
BEX	Low field mobility (UO) temperature exponent	None	-1.5
CTA	Junction capacitance (CJ) temperature coefficient	°K^-1	0.0
CTP	Junction sidewall capacitance (CJSW) temperature coefficient	°K^-1	0.0
EG	Energy gap for pn junction diodes	electron-Volt	Calculated
GAP1	1st bandgap correction factor	electron-Volt/°K	7.02e-4
GAP2	2nd bandgap correction factor	°K	1108
LAMEX	LAMBDA temperature coefficient	°K^-1	0.0
PTA	Junction potential (PB) temperature coefficient (TLEVC = 1 or 2)	Volt/°K	0.0
PTC	Fermi potential (PHI) temperature coefficient (TLEVC = 1 or 2)	Volt/°K	0.0
PTP	Junction potential (PHP) temperature coefficient (TLEVC = 1 or 2)	Volt/°K	0.0
TCV	Threshold voltage (VTH) temperature coefficient	Volt/°K	0.0
TLEV	Temperature equation selector 0 = SPICE-style 1 = ASPEC style	None	0
TLEVC	Temperature equation selector for junction capacitances and potentials 0 = SPICE-style 1 = ASPEC style	None	0
TRD	Temperature coefficient for drain resistor (RD)	°K^-1	0.0
TRS	Temperature coefficient for source resistor (RS)	°K^-1	0.0
XTI	Saturation current temperature exponent	None	0.0

Advanced Level 2 Model Netlist Example

.model MODnmos8511 nmos level=8 tnom=27 a0=0.7047165 a1=0 a2=1

+ af=0.97

+ ags=0.6217114 alpha0=3.407059e-07 alpha1=1.1897968

+ at=-123332 b0=0.0004671489

+ b1=0.0005506269 beta0=14.9176967 capmod=2 cdsc=-0.0006524708

+ cdscb=2.445784e-05 cf=0 cgbo=0 cgdl=0 cgdo=0 cgsl=0 cgso=0

+ cit=-0.001911036

+ cj=0.002035 cjswg=4.584e-11 cjsw=4.23e-10 ckappa=0.6

+ clc=1e-07 cle=0.6

+ delta=0.00702037 dlc=2.62154504166667e-09 drout=0.009089753

+ dsub=2.4414572

+ dvt0=0.5983559 dvt0w=0 dvt1=0.0444708 dvt1w=5300000

+ dvt2=0.1445384

+ dvt2w=-0.032 dwb=-3.726423e-08 dwc=-1.6119005773e-06

+ dwg=-1.480819e-08 ef=1

+ elm=5 eta0=20 etab=-48.3355303 hdif=3.3e-07 js=1.33e-07

+ k1=0.5356169

+ k2=-0.0268863 k3=-22.7398585 k3b=-10.1702254 keta=-0.0131408

+ kf=2.7e-27

+ kt1=-0.3241618 kt1l=-2.027033e-09 kt2=-0.0717199

+ la0=-0.4454584

+ lags=0.5587801 ldif=0 lint=2.62154504166417e-09

+ lk1=-0.0442092 lk2=0.0160318

+ lln=1 lmin=2.4e-07 lpdiblc2=0.00344163 lpscbe1=6.048571e-06

+ luc=-0.0507473

+ lvoff=-0.016263 lwn=1 mj=0.5118 mjsw=0.4916 mobmod=3 n=1

+ nch=2.68413e+17

+ nfactor=2.786641 nlx=7.630352e-07 noimod=1 nqsmod=0

+ pa0=-5.7084744

+ pags=16.5085896 pb=0.9966 pbsw=0.9966 pclm=1.4696409

+ pdiblc1=0.001387071

+ pdiblc2=0.004761822 pdiblcb=-0.0236973 pdwg=-4.6926e-07

+ pk1=0.11649996

+ pk2=-0.142513512 prt=-32.4592531 prwb=-0.3947007

+ prwg=0.1120965

+ pscbe1=10000000000 pscbe2=1e-09 pu0=-0.0046465272

+ pua=2.31453768e-09

+ pua1=-3.89208e-10 pub=4.8e-19 pub1=1.061016e-17 puc=0

+ pvag=0.3332895

+ pvth0=-0.156971064 rd=0 rdsw=362.8942358 rs=0 rsh=0

+ tox=5.5e-09 u0=0.0283165

+ ua=-1.228226e-09 ua1=1.18763e-09 ub=2.205781e-18

+ ub1=-1.52409e-18

+ uc=0.1636595 uc1=0.3106885 ute=-1.5522555 voff=-0.1171691

+ vsat=98816.62

+ vth0=4.762307 w0=2.5e-06 wint=-1.61190057730003e-06

+ wkt2=0 wln=1 wmin=5.8e-07

+ wr=1 wu0=-0.23228496 wua1=-1.59852e-08 wub1=1.9266792e-17

+ wuc=0.7466712

+ wuc1=0 wwn=1 xj=1.5e-07 xpart=0.4

HFSS视频教程 ADS视频教程 CST视频教程 Ansoft Designer 中文教程


Copyright © 2006 - 2013 微波EDA网, All Rights Reserved 业务联系：mweda@163.com