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MOSFET Instance, Philips MOS11 Version 1100 Model (Level 63)

MOSFET Instance, Philips MOS11 Version 1100 Model (Level 63)

Philips MOS11 MOSFET Instance Netlist Syntax

Philips MOS11 Level 1100, 11010 (1101 physical), and 11011 (1101 binned) MOSFETs are grouped as HSPICEÔ Level 63. Philips MOS11 instances all use the following netlist syntax:

Mxxxx nd ng ns [nb] modelname [[L=]length] [[W=]width]

[AD=val] [AS=val] [PD=val] [PS=val]

[DTA=val] [MULT=val] [DTEMP=val]

nd is the drain node, ng is the gate node, ns is the source node, and nb is the bulk or substrate node of the MOSFET. modelname is the name of a Level 63 MOSFET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

[AD=val] [AS=val] [PD=val] [PS=val]

[DTA=val] [MULT=val] [DTEMP=val]

**Level 63 MOSFET Instance Parameters**
Instance Parameter	Description	Unit	Default
AD	Drain diffusion area	Meter²	0.0
AS	Source diffusion area	Meter²	0.0
DTA	Temperature offset of the device with respect to T_A	°C	0.0
DTEMP	Difference between element and circuit temperatures	°C	0.0
L	Physical gate length	Meter	2.0e-6
MULT	Multiplier: simulates parallel transistors	None	1.0
PD	Drain perimeter	Meter	0.0
PS	Source perimeter	Meter	0.0
W	Physical gate width	Meter	1.0e-5

Netlist Example

M213 55 56 57 mos11_3 dtemp=3

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