Model Parameter

Description

Unit

Default

LEVEL=62

Selects RPI AIM-SPICE MOS16 Poly-Si TFT MOSFET model

None

1

VERSION

Version number

None

1.0

ACM

Area calculation method

None

0

AF

Flicker noise exponent

None

1.0

ASAT

Proportionality constant of VSAT

None

1.0

AT

DIBL parameter 1

Meter/Volt

3.0e-8

BLK

Leakage barrier lower constant

None

0.001

BT

DIBL parameter 2

Volt-Meter

1.9e-6

CAPMOD

Capacitance model selector

None

0

CGDO

Gate-drain overlap capacitance per meter channel width

Farad/Meter

Not used if not provided

CGSO

Gate-source overlap capacitance per meter channel width

Farad/Meter

Not used if not provided

CLK (I0)

Leakage scaling constant

Amp/Meter

6.0

CT

ALPHASAT length coefficient

0.0

DASAT

Temperature coefficient of ASAT

°C^-1

0.0

DD

Vds field constant

Meter

1400e-10

DELTA

Transition width parameter

None

4.0

DG

Transition width parameter

Meter

2000e-10

DMU1

Temperature coefficient of MU1

cm²/Volt-sec-°C

0.0

DVT

Difference between VON and VTO

Volt

0.0

DVTO (DVT0)

Temperature coefficient of DVT

0.0

EB

Barrier height of diode

electron-Volt

0.68

EPS

Substrate dielectric constant

11.0

ETA

Subthreshold ideality factor

None

7.0

ETAC0

Capacitance subthreshold ideality factor at zero drain bias

None

ETA

ETAC00

Capacitance subthreshold coefficient of drain bias

Volt^-1

0.0

HDIF

Length of heavily-doped idffusion region

Meter

0.0

I00

Reverse diode saturation current

Amp/Meter

150

INTDSNOD

Intrinsic source and drain flag

None

0.0

ISUBMOD

Channel length modulation flag

None

0.0

KSS

Fractions of channel resistance (small signal parameter)

None

0.0

L0

Length at which ALPHASAT saturates

Meter

0.0

LAMBDA

Channel length modulation parameter

0.048

LASAT

Coefficient for length dependence of ASAT

Meter

0.0

LD

Lateral diffucion into channel

Meter

Not used if not present

LDIF

Length of heavily doped diffusion region

Meter

0.0

LKINK

Kink effect constant

Meter

19.0e-6

LMLT

Shrink factor

None

1.0

LMS

MS length coefficient

0.0

LS

Channel length modulation

35.0e-9

LU0

MU0 length coefficient

0.0

LU1

Low field mobility length coefficient

0.0

MC

Capacitance knee shape parameter

None

3.0

ME (MS)

Long channel transition

2.5

META

ETA floating body

1.0

METO

Fringing field constant

None

0.0

MINME

Minimum of ME

2.0

MINR

Minimum resistance

Ohm

0.1

MK (MKINK)

Kink effect exponent

None

1.3

MMU (M)

Low field mobility exponent

None

1.7

MSS

Vdse transition

1.5

MU0

High field mobility

cm²/Volt-sec

100

MU1

Low field mobility parameter

cm²/Volt-sec

0.0022

MUS

Subthreshold mobility

cm²/Volt-sec

1.0

RD

Drain resistance

Ohm

0.0

RDC

Drain contact ohmic resistance

Ohm

0.0

RDX

Resistance in series with Cgd

Ohm

0.0

RS

Source resistance

Ohm

0.0

RSC

Source contact ohmic resistance

Ohm

0.0

RSH

Sheet resistance

Ohm

0.0

RSX

Resistance in series with Cgs

Ohm

0.0

SCALEM

Length and width scale factor

None

1.0

SCALERPI

Scaling selector

0.0

SIGMA

Minimum leakage

1.0e-14

THETA

Mobility modulation

0.0

TNOM

Temperature at which parameters are extracted

°C

27

TOX

Thin-oxide thickness

Meter

1.0e-7

TRISE

Temperature rise from ambient

0.0

VFB

Flatband voltage

Volt

NMOS: -3.0

PMOS: 3.0

VKINK

Kink effect voltage

Volt

9.1

VMAX

Carrier saturation velocity

4.0e4

VON

On-state voltage

Volt

0.0

VP

CLM voltage

Volt

0.2

VSI (VSIGMA)

Above threshold DIBL (Vgs dependence parameter)

Volt

2.0

VST (VSIGMAT)

Above threshold DIBL (Vgs dependence parameter)

Volt

2.0

VTO (VT0)

Zero-bias threshold voltage

Volt

Not used if not present

WD

Width of lateral diffusion

Meter

0.0

WMLT

Width shrink factor

1.0

XJ

Junction depth

Meter

1.5e-7

XL

Correction for mask etch effect

0.0

XW

Correction for mask etch effect

0.0

ZEROC

Flag for capacitance calculation in CAPMOD=1

0 = calculate capacitance

1 = set capacitance to 0

None

0