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MOSFET Instance, BSIM3-SOI Model (Level 57)

MOSFET Instance, BSIM3-SOI Model (Level 57)

BSIM3-SOI MOSFET Instance Netlist Syntax

The syntax for a LEVEL=57 BSIM3-SOI v2.0.1 MOSFET instance is:

Mxxxx nd ng ns ne [np] [nb] modelname [L=length] [W=width]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val] [NRB=val] [RTH0=val] [CTH0=val]

[NBC=val] [NSEG=val] [PDBCP=val] [PSBCP=val]

[AGBCP=val] [AEBCP=val] [TNODEOUT=val]

[FRBODY=val] [BJTOFF=val] [M=val]

nd is the drain node, ng is the front gate node, ns is the source node, ne is the back gate or substrate node, np is the external body contact node, and nb is the internal body node of the MOSFET. modelname is the name of a BSIM3-SOI MOSFET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val] [NRB=val] [RTH0=val] [CTH0=val]

[NBC=val] [NSEG=val] [PDBCP=val] [PSBCP=val]

[AGBCP=val] [AEBCP=val] [TNODEOUT=val]

[FRBODY=val] [BJTOFF=val] [M=val]

**Level 57 MOSFET Instance Parameters**
Instance Parameter	Description	Unit	Default
AD	Drain diffusion area	Meter²	0.0
AEBCP	Parasitic body-to-substrate overlap area for body contact	Meter²	0.0
AGBCP	Parasitic gate-to-body overlap area for body contact	Meter²	0.0
AS	Source diffusion area	Meter²	0.0
BJTOFF	1 = Turn off BJT	None	0
CTH0	Thermal capacitance per unit width	Farad/Meter	1.0e-5
FRBODY	Coefficient of distributed body resistance effects	None	1.0
L	SOI MOSFET channel length	Meter	5.0e-6
M	Multiplier: simulates parallel transistors	None	1.0
NBC	Number of body contact isolation edges	None	0.0
NRB	Number of squares for body series resistance	None	0.0
NRD	Number of squares of drain diffusion for resistance calculations	None	0.0
NRS	Number of squares of source diffusion for resistance calculations	None	0.0
NSEG	Number of segments for channel width partitioning	None	1.0
PD	Drain diffusion perimeter including channel edge	Meter	0.0
PDBCP	Parasitic perimeter length for the body contact at drain side	Meter	0.0
PS	Source diffusion perimeter including channel edge	Meter	0.0
PSBCP	Parasitic perimeter length for the body contact at source side	Meter	0.0
RTH0	Thermal resistance per unit width	Ohm/Meter	0.0
TNODEOUT	Temperature node flag. If TNODEOUT is not specified, specifying four nodes floats the body node, while specifying five nodes sets the fifth node as the external body contact node, and a body resistance is placed between the internal and external terminals (distributed body resistance simulation). If TNODEOUT is specified, the last node is interpreted as the temperature node. In this case, specifying five nodes floats the device, while specifying six nodes implies a body-contacted case. If seven nodes are specified, the simulation assumes the body-contacted case with an accessible internal body node (thermal coupling simulation).	None	Not present
W	SOI MOSFET channel width	Meter	5.0e-6

Netlist Example

M65 90 91 92 mos33 L=1.2e-6

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