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EPFL-EKV MOSFET Model, Level 55

The syntax for a Level 55 MOSFET model is:

.MODEL modelname NMOS LEVEL=55 [(][parameter=val] ... [)]

.MODEL modelname PMOS LEVEL=55 [(][parameter=val] ... [)]

modelname is the name used by MOSFET instances to refer to this .MODEL statement. The LEVEL=55 entry selects the EPFL-EKV MOSFET model.

**Level 55 MOSFET Intrinsic Basic, Optional, and Process-Related Model Parameters**
Model Parameter	Description	Unit	Default
LEVEL	55 is required to select the EPFL-EKV MOSFET model	None	1 (default if LEVEL parameter is omitted)
COX	Gate oxide capacitance per unit area	Farad/Meter²	7.0e-4
DL (XL)	Channel shortening	Meter	0.0
DW (XW, WDEL)	Channel narrowing	Meter	0.0
EKVINT	Interpolation function selector	None	0.0
E0 (EO)	Vertical critical field	Volt/Meter	1.0e+12
GAMMA	Body effect parameter	Volt^½	1.0
GEO	Layout geometry 0 = Drain and source not shared 1 = Drain shared 2 = Source shared 3 = Drain and source shared	None	0
KP	Transconductance parameter	Amp/Volt²	5.0e-5
PHI	Bulk Fermi potential	Volt	0.7
SCALM	Scale factor for model parameters	None	1.0
THETA	Mobility reduction coefficient (Used only when E0 not specified)	Volt^-1	0.0
TNOM	Nominal device temperature	°C	25
TT	Transit time	Second	0.0
UCRIT	Longitudinal critical field	Volt/Meter	100.0e+6
UPDATE	Update parameter	None	0.0
VTO (VT0)	Threshold voltage at V_BS = 0.	Volt	NMOS: 0.5 PMOS: -0.5
XJ	Junction depth	Meter	1.0e-7

**Level 55 MOSFET Channel Length Modulation and Charge Sharing Model Parameters**
Model Parameter	Description	Unit	Default
LAMBDA	Depletion length coefficient	None	0.5
LETA	Short-channel effect coefficient	None	0.1
WETA	Narrow-channel effect coefficient	None	0.25

**Level 55 MOSFET Reverse Short-Channel Effect Model Parameters**
Model Parameter	Description	Unit	Default
LK	Reverse short-channel effect peak characteristic length	Meter	2.9e-7
Q0	Reverse short-channel effect peak charge density	Amp-sec/Meter²	0.0

**Level 55 MOSFET Impact Ionization Effect Model Parameters**
Model Parameter	Description	Unit	Default
IBA	1st impact ionization coefficient	Meter^-1	0.0
IBB	2nd impact ionization coefficient	Volt-Meter^-1	3.0e+8
IBN	Saturation voltage factor for impact ionization	None	1.0

**Level 55 MOSFET Temperature Model Parameters**
Model Parameter	Description	Unit	Default
BEX	Surface channel mobility temperature exponent	None	-1.5
IBBT	Temperature coefficient for IBB	°K^-1	9.0e-4
TCV	Threshold voltage temperature coefficient	Volt/°K	1.0e-3
TR1	1st-order temperature coefficient	°K^-1	0.0
TR2	2nd-order temperature coefficient	°K^-2	0.0
UCEX	Longitudinal critical field temperature exponent	None	0.8

**Level 55 MOSFET Setup Model Parameters**
Model Parameter	Description	Unit	Default
NQS	Non-Quasi-Static (NQS) operation selector	None	0.0
SATLIM	Ratio defining the saturation limit	None	e⁴ [exp(4)]

**Level 55 MOSFET Junction Model Parameters**
Model Parameter	Description	Unit	Default
ACM	Area calculation method selector	None	0
CBS (CAPBS)	Bulk-drain overlap capacitance	Farad	0.0
CBD (CAPBD)	Bulk-source overlap capacitance	Farad	0.0
CJ	Zero bias bulk junction bottom capacitance per sq meter of junction area	Farad/Meter²	0.0
CJGATE	Zero-bias bulk junction sidewall capacitance	Farad/Meter	CJSW
CJSW	Zero-bias bulk junction sidewall capacitance per meter of junction perimeter	Farad/Meter	0.0
FC	Forward-bias capacitance depletion coefficient	None	0.5
HDIF	Length of heavily-doped diffusion region from contact to lightly-doped region	Meter	0.0
LD (DLAT, LATD)	Lateral diffusion into channel from source and drain diffusion	Meter	Calculated
LDIF	Length of lightly-doped diffusion near gate	Meter	0.0
IS	Bulk junction saturation current	Amp	1.0e-14
JS	Bulk junction saturation current density	Amp/Meter²	0.0
JSW	Bulk junction sidewall saturation current	Amp/Meter	0.0
MJ	Bulk junction bottom grading coefficient	None	0.5
MJSW	Bulk junction sidewall grading coefficient	None	0.33
N	Emission coefficient	None	1.0
PB	Bulk junction contact potential	Volt	0.8
PBSW	Bulk junction sidewall contact potential	Volt	0.8
WMLT	Diffusion layer width reduction factor	None	1.0
XTI	Junction current temperature coefficient	None	3.0

**Level 55 MOSFET Resistance and Capacitance Model Parameters**
Model Parameter	Description	Unit	Default
CGBO	Gate-bulk overlap capacitance per meter channel length	Farad/Meter	0.0
CGDO	Gate-drain overlap capacitance per meter channel width	Farad/Meter	0.0
CGSO	Gate-source overlap capacitance per meter channel width	Farad/Meter	0.0
RD	Drain resistance	Ohm	0.0
RDC	Drain contact resistance for per-finger device	Ohm	0.0
RS	Source resistance	Ohm	0.0
RSC	Source contact resistance for per-finger device	Ohm	0.0
RSH	Source/drain sheet resistance per square.	Ohm/square	0.0

EPFL-EKV MOSFET Model Netlist Example

.MODEL epflekvmosfet LEVEL=55

+ COX=3.45E-3 XJ=0.15E-6 VTO=0.7 GAMMA=0.7 PHI=0.5

+ KP=150E-6 E0=200E+6 UCRIT=2.3E+6 LAMBDA=0.8

+ LETA=0.3 WETA=0.2 Q0=230E-6 LK=0.4E-6

+ IBA=2.0E+8 IBB=2.0E+8 IBN=0.6


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