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MOSFET Levels 55 through 99 >
MOSFET Instance, EPFL-EKV Model (Level 55)

MOSFET Instance, EPFL-EKV Model (Level 55)

EPFL-EKV MOSFET Instance Netlist Syntax

The syntax for a Level 55 EPFL-EKV v2.6, R 11 MOSFET instance is:

Mxxxx nd ng ns [nb] modelname [[L=]length] [[W=]width]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val] [VDSAT=val]

[M=val] [SCALE=val] [TEMP=val]

nd is the drain node, ng is the gate node, ns is the source node, and nb is the bulk or substrate node of the MOSFET. modelname is the name of a Level 55 MOSFET model defined in a .MODEL statement elsewhere in the netlist.

When the option WL is in effect (on the .OPTION statement), the syntax becomes:

Mxxxx nd ng ns [nb] modelname [width] [length]

[AD=val] [AS=val] [PD=val] [PS=val]

[NRD=val] [NRS=val] [VDSAT=val]

[M=val] [SCALE=val] [TEMP=val]

**Level 55 MOSFET Instance Parameters**
Instance Parameter	Description	Unit	Default
AD	Drain diffusion area	Meter²	0.0
AS	Source diffusion area	Meter²	0.0
L	MOSFET channel length	Meter	2.0e-6
M	Multiplier: simulates parallel transistors	None	1.0
NRD	Number of squares of drain diffusion for resistance calculations	None	1.0
NRS	Number of squares of source diffusion for resistance calculations	None	1.0
PD	Drain diffusion periphery	Meter	0.0
PS	Source diffusion periphery	Meter	0.0
SCALE	Scale factor for instance parameters	None	1.0
TEMP	Device temperature	°C	Circuit temperature
VDSAT	Saturation drift velocity	Meter/sec	0.0
W	MOSFET channel width	Meter	10.0e-6

EPFL-EKV MOSFET Instance Netlist Example

M245 11 12 13 14 epsmodel55 L=1.845e-6 W=9.216e-6

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